JPH0318298B2 - - Google Patents
Info
- Publication number
- JPH0318298B2 JPH0318298B2 JP15608983A JP15608983A JPH0318298B2 JP H0318298 B2 JPH0318298 B2 JP H0318298B2 JP 15608983 A JP15608983 A JP 15608983A JP 15608983 A JP15608983 A JP 15608983A JP H0318298 B2 JPH0318298 B2 JP H0318298B2
- Authority
- JP
- Japan
- Prior art keywords
- light
- wall
- cap
- coating
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000576 coating method Methods 0.000 claims description 15
- 239000011248 coating agent Substances 0.000 claims description 13
- 239000004065 semiconductor Substances 0.000 claims description 13
- 239000000758 substrate Substances 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 3
- 230000031700 light absorption Effects 0.000 claims 1
- 239000011521 glass Substances 0.000 description 8
- 230000001681 protective effect Effects 0.000 description 6
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 5
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 5
- 239000000919 ceramic Substances 0.000 description 5
- 229910000423 chromium oxide Inorganic materials 0.000 description 5
- 238000010521 absorption reaction Methods 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J31/00—Cathode ray tubes; Electron beam tubes
- H01J31/08—Cathode ray tubes; Electron beam tubes having a screen on or from which an image or pattern is formed, picked up, converted, or stored
- H01J31/10—Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes
- H01J31/12—Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes with luminescent screen
- H01J31/15—Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes with luminescent screen with ray or beam selectively directed to luminescent anode segments
Description
【発明の詳細な説明】
本発明は表示パネルと半導体素子から成る駆動
回路部とが同一ガラス基板上に一体形成された通
称「チツプ・オン・グラス（Chip on Glass）」
（以下COGと称す）の構造を有する蛍光表示管に
関するもので、特に半導体素子の封止構造に関す
る。[Detailed Description of the Invention] The present invention is a so-called "chip on glass" device in which a display panel and a drive circuit section consisting of semiconductor elements are integrally formed on the same glass substrate.
(hereinafter referred to as COG) structure, and particularly relates to a sealing structure for semiconductor elements.
従来のCOG構造を有する蛍光表示管として第
１図および第２図に、要部切欠き平面図およびＡ
−Ａ部切断断面図を示すような構造のものが提供
されている。すなわち、この従来例について説明
すると、図において、１は駆動回路形成板を兼ね
た陽極基板で、ガラスからなる基板１Ａの上面に
積層被着された複数の配線被膜２、絶縁被膜３、
セグメント電極４、けい光体層５等を備えたもの
であり、かつこのけい光体層５を有する複数のセ
グメント電極４によつて数字等のパターンを表示
する陽極表示部６を構成し、この陽極表示部６を
複数けた並設させて複数けたの数字等を選択的に
表示できるようになつている。 Figures 1 and 2 show a cutaway plan view of the main parts and a
- A structure as shown in the cross-sectional view of section A is provided. That is, to explain this conventional example, in the figure, 1 is an anode substrate that also serves as a drive circuit forming board, and a plurality of wiring coatings 2, insulating coatings 3,
It is equipped with a segment electrode 4, a phosphor layer 5, etc., and the plurality of segment electrodes 4 having the phosphor layer 5 constitute an anode display section 6 for displaying patterns such as numbers. A plurality of anode display sections 6 are arranged in parallel so that a plurality of digits, etc. can be selectively displayed.
配線被膜２は、絶縁被膜３に設けた接続孔７を
通して隣接するセグメント電極４を電気的に接続
し、さらに、外部駆動回路接続電極として基板１
Ｂ上迄、延長配線されている。また、各陽極表示
部６に対向させてメツシユ状の制御電極１１およ
び陰極１２が配設され配線被膜２により基板１Ｂ
上迄、延長配線されている。陽極表示部６、制御
電極１１、陰極１２等を備えた陽極基板１Ａの上
に、少なくとも上面窓部は透明なガラスなどから
なる上面板１３が配設され、その周縁部において
低融点フリツトガラスのような封着材２２によつ
て気密に封着されて、外囲器が形成されている。 The wiring film 2 electrically connects adjacent segment electrodes 4 through connection holes 7 provided in the insulating film 3, and further connects the substrate 1 as external drive circuit connection electrodes.
The wiring is extended to the top of B. Further, a mesh-shaped control electrode 11 and a cathode 12 are arranged to face each anode display section 6, and a wiring film 2 is formed on the substrate 1B.
The wiring is extended to the top. On the anode substrate 1A having an anode display section 6, a control electrode 11, a cathode 12, etc., an upper plate 13 made of transparent glass or the like is disposed at least in the upper window part, and the peripheral part thereof is made of transparent glass or the like. The housing is hermetically sealed with a sealing material 22 to form an envelope.
次に基板１Ｂ上に形成される駆動回路１４につ
いて説明する。この従来例については、水晶制御
クロツク用CMOSLSI１５を１チツプ、基板１Ｂ
上に実装している。CMOSLSIチツプ１５は導電
性あるいは絶縁性接着剤１６により基板１Ｂ上に
ダイボンデイングされる。続いてチツプ１５上の
電極の配線被膜２により形成されたパツド部１７
間を接続するワイヤ−ボンデイングを行なう。こ
れには金線１８を用い例えばサーモソニツク法で
接続される。更にこれらの上から保護キヤツプ１
９として金属製あるいはセラミツク製中空パツケ
ージにより覆い、かつ固定する為に接着剤２０を
用い、駆動回路１４が出来あがる。これがCOG
構造の基本構成である。 Next, the drive circuit 14 formed on the substrate 1B will be explained. In this conventional example, one chip of CMOS LSI15 for crystal control clock, one chip of CMOS LSI15 for the crystal control clock,
It is implemented on top. The CMOS LSI chip 15 is die bonded onto the substrate 1B using a conductive or insulating adhesive 16. Next, a pad portion 17 formed by the wiring coating 2 of the electrode on the chip 15 is formed.
Perform wire bonding to connect between the two. This is connected using a gold wire 18, for example, by a thermosonic method. Furthermore, a protective cap 1 is placed over these.
The driving circuit 14 is then covered with a metal or ceramic hollow package as 9, and an adhesive 20 is used to fix it. This is COG
This is the basic composition of the structure.
この様に製作された、COG構造を有する表示
管においてはインターフエイス信号用外部端子２
１に水晶振動子（図示せず）を取付け直流電源に
接続することによりスタテイツク駆動の時計表示
を行うことが出来る。 In the display tube manufactured in this way and having a COG structure, the external terminal 2 for interface signals is
By attaching a crystal oscillator (not shown) to 1 and connecting it to a DC power source, a statically driven clock display can be performed.
しかしながら第１図、第２図に示すような従来
の半導体チツプ１５用キヤツプ１９は気密性につ
いては考慮されて設計されていたが、ガラス基板
１Ｂの裏面からの光３０の透過については考慮さ
れていなかつた。その為にガラス基板１の裏面を
通して光３０がパツケージ内に透過していた。こ
こでは保護キヤツプ１９の一例としてアルミナ質
から成るセラミツクを用いてパツケージングして
いるが、光の反射に対して特別な処理がなされて
いない為、光に対する反射係数はかなり大きい。
その為パツケージ内に透過した光３０はキヤツプ
の内壁で反射をくり返したのち半導体素子である
チツプ１５の表面に到達する。 However, although the conventional cap 19 for the semiconductor chip 15 as shown in FIGS. 1 and 2 was designed with consideration to airtightness, no consideration was given to the transmission of light 30 from the back surface of the glass substrate 1B. Nakatsuta. Therefore, the light 30 was transmitted into the package through the back surface of the glass substrate 1. Here, as an example of the protective cap 19, ceramic made of alumina is used for packaging, but since no special treatment has been applied to the reflection of light, the reflection coefficient for light is quite large.
Therefore, the light 30 transmitted into the package is repeatedly reflected on the inner wall of the cap, and then reaches the surface of the chip 15, which is a semiconductor element.
光による漏電流が問題となるCMOSLSIチツプ
１５では、パツケージ内に透過した光３０によつ
て、電気的特性が変化する為、パツケージ内に透
過する光が原因である誤動作が時々発生する問題
点を有していた。 In the CMOS LSI chip 15, where leakage current due to light is a problem, the electrical characteristics change due to the light 30 transmitted inside the package, so we have solved the problem that malfunctions sometimes occur due to the light transmitted inside the package. had.
本発明は、前述したような光による問題点を解
消したCOG構造を有する蛍光表示管を提供せん
とするものである。 The present invention aims to provide a fluorescent display tube having a COG structure that eliminates the problems caused by light as described above.
その主旨とする拠は、光により半導体素子に誘
起される漏電流のため、特性変動の大きい半導体
素子を収納するパツケージ内に透過した光の半導
体素子上に到達する量を極度に減ずることによ
り、特性変動を問題ない程度迄低下させうる保護
キヤツプを提供することにある。 The main idea behind this is that due to the leakage current induced in semiconductor elements by light, by extremely reducing the amount of light that passes through a package that houses semiconductor elements with large characteristic fluctuations and reaches the semiconductor elements. The object of the present invention is to provide a protective cap capable of reducing characteristic fluctuations to an acceptable level.
本発明に於ては保護キヤツプ１９の内壁に、光
に対する反射係数が小で、かつ吸収係数の大なる
物質よりなる被膜を形成したことを特徴としてい
る。 The present invention is characterized in that the inner wall of the protective cap 19 is coated with a coating made of a material that has a small reflection coefficient and a large absorption coefficient for light.
以下に本発明を実施例により詳細に説明する。 The present invention will be explained in detail below using examples.
第３図は本発明の実施例による切断断面図であ
る。図に於て第１図および第２図と同じ部材につ
いては同じ符号を用いてあり、これらの基本的役
割は従来法と何ら変りはない。さて、この実施例
におけるキヤツプ１９はアルミナ質セラミツクを
用いている。このキヤツプの内壁には酸化クロム
より成る被膜４０を被着せしめてある。この被膜
４０はクロム粉末とバインダーからなる液をセラ
ミツク内壁に塗布した後、空気中で焼成して酸化
クロム被膜に変換させたものである。尚酸化クロ
ム被膜形成法として、クロム粉末の変りにクロム
金属を蒸着により被着させ空気中焼成する方法も
あるが、この場合得られる酸化クロム被膜の光に
対する反射係数はクロム粉末の場合より大きく得
策ではない。反射係数を小さくするには、表面の
凹凸を有するクロム粉末を使用して形成した被膜
の方が望ましい。この構造において、ガラス基板
１（１Ｂ裏面）を通してキヤツプ内に透過した光
３０は、キヤツプの内壁に到達するのであるが、
キヤツプの内壁に、酸化クロムから成る、光に対
する反射係数が小でかつ吸収係数の大なる物質か
ら成る被膜４０を被着してあるので、内壁に到達
した光３０はほとんどここで吸収される。よつて
キヤツプ内に透過した光が、半導体チツプ１５に
到達する割合は、極度に減少する。 FIG. 3 is a cutaway sectional view according to an embodiment of the present invention. In the drawings, the same members as in FIGS. 1 and 2 are designated by the same reference numerals, and their basic roles are the same as in the conventional method. Now, the cap 19 in this embodiment is made of alumina ceramic. The inner wall of this cap is coated with a coating 40 of chromium oxide. This coating 40 is obtained by applying a liquid consisting of chromium powder and a binder to the inner wall of the ceramic and then firing it in air to convert it into a chromium oxide coating. As a method for forming a chromium oxide film, there is also a method in which chromium metal is deposited by vapor deposition instead of chromium powder and then fired in the air, but in this case, the reflection coefficient of the resulting chromium oxide film against light is larger than that of chromium powder, which is a better option. isn't it. In order to reduce the reflection coefficient, it is preferable to use a coating formed using chromium powder having an uneven surface. In this structure, the light 30 transmitted into the cap through the glass substrate 1 (back side of 1B) reaches the inner wall of the cap.
Since the inner wall of the cap is coated with a coating 40 made of chromium oxide, a material with a small reflection coefficient and a large absorption coefficient for light, most of the light 30 that reaches the inner wall is absorbed there. Therefore, the rate at which the light transmitted into the cap reaches the semiconductor chip 15 is extremely reduced.
以上のように、セラミツク製保護キヤツプ１９
の内壁に、光に対する反射係数が小でかつ吸収係
数の大なる物質よりなる被膜を被着せしめる事に
より、前記キヤツプ内に透過した光が前記キヤツ
プ内壁に被着せしめた物質に依つてほとんど吸収
される為、半導体チツプ表面に到達する割合は、
従来のものに比べて大きく減少させる事が出来、
内に透過した光による半導体チツプ特性の変動を
無視できる程度まで減少させる事ができる。 As mentioned above, the ceramic protective cap 19
By coating the inner wall of the cap with a coating made of a material that has a small reflection coefficient and a large absorption coefficient for light, most of the light transmitted into the cap is absorbed by the material coated on the inner wall of the cap. Therefore, the rate of reaching the semiconductor chip surface is
It can be significantly reduced compared to conventional methods,
Fluctuations in semiconductor chip characteristics due to light transmitted inside can be reduced to a negligible level.
尚本実施例ではセラミツク製キヤツプを使用し
た場合について述べているが、金属製キヤツプを
使用した場合にも同目的に適する種々な材料を選
択して被膜形成すれば同一効果が得れることは云
うまでもない。 Although this example describes the case where a ceramic cap is used, the same effect can be obtained even when a metal cap is used by selecting various materials suitable for the same purpose and forming a coating. Not even.
第１図および第２図は従来のCOG構造を有す
る多ケタ蛍光表示管の一例を示す要部切欠き平面
図およびＡ−Ａ部切断断面図、第３図は本発明に
よるCOG構造を有する多ケタ蛍光表示管の一実
施例を示す断面図である。
１……ガラス基板、２……配線被膜、３……絶
縁被膜、４……セグメント電極、５……蛍光体
層、６……陽極表示部、１１……制御電極、１２
……陰極、１４……駆動回路部、１５……半導体
ICチツプ、１７……パツド部、１９……保護キ
ヤツプ（パツケージ）、２０……接着剤、２１…
…外部端子、３０……外部からの光、４０……反
射係数小かつ吸収係数大なる物質。
1 and 2 are a cutaway plan view and a cross-sectional view taken along the line A-A of a conventional multi-digit fluorescent display tube having a COG structure, and FIG. 3 is a multi-digit fluorescent display tube having a COG structure according to the present invention. 1 is a sectional view showing an example of a digitized fluorescent display tube. DESCRIPTION OF SYMBOLS 1... Glass substrate, 2... Wiring coating, 3... Insulating coating, 4... Segment electrode, 5... Fluorescent layer, 6... Anode display section, 11... Control electrode, 12
... Cathode, 14 ... Drive circuit section, 15 ... Semiconductor
IC chip, 17... Pad portion, 19... Protective cap (package), 20... Adhesive, 21...
...external terminal, 30...light from the outside, 40...substance with a small reflection coefficient and a large absorption coefficient.
Claims (1)
特性が変化する問題を有する半導体素子で前記表
示部を動作させる駆動回路部とが、同一基板上に
一体形成され、かつ前記半導体素子を中空キヤツ
プにより覆い、基板上に封止した構造を有する蛍
光表示管において、前記中空キヤツプの内壁に、
光の反射係数が前記内壁より小でかつ吸収係数が
前記内壁より大なる物質からなる被膜を形成した
ことを特徴とする蛍光表示管。1. A display section having a phosphor layer and a drive circuit section that operates the display section using a semiconductor element having a problem that electrical characteristics change due to light are integrally formed on the same substrate, and the semiconductor element is In a fluorescent display tube having a structure covered by a hollow cap and sealed on a substrate, on the inner wall of the hollow cap,
1. A fluorescent display tube comprising a coating formed of a material having a light reflection coefficient smaller than that of the inner wall and a light absorption coefficient larger than that of the inner wall.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15608983A JPS6047354A (en) | 1983-08-26 | 1983-08-26 | Fluorescent character display tube |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15608983A JPS6047354A (en) | 1983-08-26 | 1983-08-26 | Fluorescent character display tube |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6047354A JPS6047354A (en) | 1985-03-14 |
| JPH0318298B2 true JPH0318298B2 (en) | 1991-03-12 |
Family
ID=15620062
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15608983A Granted JPS6047354A (en) | 1983-08-26 | 1983-08-26 | Fluorescent character display tube |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6047354A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6124948U (en) * | 1984-07-20 | 1986-02-14 | 日本電気株式会社 | fluorescent display tube |
-
1983
- 1983-08-26 JP JP15608983A patent/JPS6047354A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6047354A (en) | 1985-03-14 |
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