JPH05102303A - Manufacture of semiconductor device - Google Patents

Abstract

PURPOSE:To easily divide a large-area glass substrate, to eliminate a stress such as a twist or the like which acts on a semiconductor device being divided and to enhance the yield and the reliability of the semiconductor device when, after a plurality of semiconductor elements have been formed on the glass substrate, the glass substrate is diced and individual semiconductor devices are manufactured. CONSTITUTION:Scribing grooves 50 having a desired pattern are formed on a large-area glass substrate 13 in which semiconductor devices 10 have been formed; after that, a freezing and expansive liquid 54 is applied to one part or the whole region of the scribing grooves 50; then, the glass substrate 13 is immersed and cooled in a very-low-temperature liquid such as liquid nitrogen; the liquid 54 is frozen; and the glass substrate 13 is diced along the scribing grooves 50 by means of the expansive force of the liquid 54.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a semiconductor device such as a linear image sensor, and more particularly to a method of manufacturing a semiconductor device used in a facsimile, an image scanner, a digital copying machine, an electronic blackboard and the like.

[0002]

2. Description of the Related Art In a semiconductor device, for example, a linear image sensor, a plurality of semiconductor elements each composed of a lower electrode, a semiconductor layer, and an upper electrode are linearly arranged on a glass substrate. The inter-layer insulating film which covers and insulates the plurality of semiconductor elements, and the wiring arranged via the inter-layer insulating film. The size of semiconductor elements, wirings, and the like constituting this linear image sensor is in the unit of μm, and a photolithography method is usually used for fine processing. For this reason,
In order to manufacture a linear image sensor, it is necessary to repeat the steps of film formation, photoresist coating, photomask positioning, exposure, and etching. To reduce the manufacturing cost, a large number of linear image sensors can be manufactured at one time. Most preferably, it is manufactured. Therefore, after forming a plurality of linear image sensors at the same time using a large-area glass substrate, the large-area glass substrate is divided to manufacture individual linear image sensors.

As one of the methods for dividing the glass substrate,
A method of cutting a large-area glass substrate with a dicer used for cutting a silicon wafer is widely used. This cutting method is, for example, as shown in FIG. 8, a resin film 3 is attached to the back surface side of a glass substrate 2 on which a semiconductor element 1 and the like are formed by an adhesive layer 4, and the resin film 3 is left by a rotary blade 5 of a dicer. The glass substrate 2 is sequentially cut. The resin film 3 prevents the glass substrate 2 of the linear image sensor 6 cut by the dicer from being caught in the rotary blade 5 of the dicer and damaged so that the linear image sensor 6 is manufactured.

By the way, a cutting margin is required for cutting the glass substrate 2 by a dicer, and the cutting margin is usually 0.2.
It takes more than mm. This cutting margin corresponds to, for example, 10% or more when the width of the linear image sensor 6 in the sub-scanning direction is 2 mm, and limits the number of linear image sensors 6 that can be manufactured from the glass substrate 2 having a certain size. . Further, there is a problem that chipping is caused by the rotary blades 5 on both sides of the cutting line by the dicer, the end portions of the corners are not sharply formed, and the electrode portion of the sensor is damaged, so that wire bonding cannot be performed. Therefore, a margin is required for the width of the glass substrate 2 in the sub-scanning direction in consideration of this chipping with respect to the effective area where the semiconductor element 1 and the like are formed,
The number of linear image sensors 6 that can be manufactured from the glass substrate 2 having a constant size is further reduced.

Further, the cutting of the glass substrate 2 by the dicer takes a long time, and the productivity cannot be improved. Further, the cutting length of the glass substrate 2 varies depending on the reading size of the linear image sensor 6, but is usually about 200 to 340 mm, and a long dicer is required to cut such a long distance. However, this long dicer is difficult to obtain because of its special use and is expensive. In addition, the blade 5 of the dicer needs to be replaced and the resin film or pure water needs to be used, which causes a problem of high running cost.

Further, when the glass substrate 2 is cut by a dicer, a resin film 3 is attached to the back surface of the glass substrate 2 so that the cut glass substrate 2 is not caught by a rotary blade. It is necessary to peel off the resin film 3. Therefore, various treatments such as immersion in a solvent are required, and this treatment damages the semiconductor element 1 and the like formed on the glass substrate 2.

Therefore, folding is used as a method of dividing the glass substrate 2. As shown in FIG. 9, the glass substrate 2 is split by first inserting a scribe line 7 into the glass substrate 2 with a scriber (not shown), and then working an ear 8 which is an unnecessary portion provided on the outer peripheral portion of the glass substrate 2. It is made so that the person bends it while supporting it with his / her fingertips, and splits it one by one along the scribe line 7. That is, according to such a breaking method, a crack is formed along the scribe line 7 from the ear portion 8 of the glass substrate 2 which is supported by a fingertip and is bent, and the crack gradually progresses in the tip direction to divide the glass substrate 2. The individual linear image sensors 6 are separated from each other.

According to this breaking method, bending or twisting stress acts on the linear image sensor 6 separated from the glass substrate 2, and a crack is generated in the thin film semiconductor element 1 formed on the glass substrate 2. There is a risk that the semiconductor element 1 may enter or peel off from the glass substrate 2 to reduce the yield and further reduce the reliability. Also, when the glass substrate 2 is thin, it is possible to fold it sufficiently, but as the width in the sub-scanning direction becomes narrower, it becomes more difficult to fold, and for example, normally used 1.
It was difficult to break the 1 mm thick glass substrate 2 into a width of about 3 mm.

Further, even if the width of the linear image sensor 6 in the sub-scanning direction is reduced to improve the productivity, it is considerably difficult to fold the width of the glass substrate 2 to 3 mm or less, and no skill is required. I can't break it. Also,
However, there is a problem that the defective rate becomes high even if it can be folded. Further, when the length of the linear image sensor 6 in the main scanning direction is 100 mm or more, there is a problem that the yield is remarkably reduced such that the linear image sensor 6 is broken on the way or the formed semiconductor element 1 is damaged.

Therefore, the inventors of the present invention have used a glass substrate folding method to improve the productivity of semiconductor devices, thereby reducing the width in the sub-scanning direction and increasing the length in the main scanning direction. As a result of repeated studies to obtain a method of manufacturing a semiconductor device, which satisfies the conflicting conditions of obtaining a semiconductor device that can be folded and has no defects,
The present invention has been completed.

[0011]

A gist of a method of manufacturing a semiconductor device according to the present invention is that a plurality of semiconductor elements are formed on a glass substrate and then a glass substrate having the plurality of semiconductor elements is formed. In a method of manufacturing a semiconductor device having a semiconductor element by forming a scribe groove having a desired pattern and then breaking the glass substrate, after forming the scribe groove, freeze-expanding at one end or the entire area of the scribe groove. Liquid is applied, and then it is cooled to an extremely low temperature to freeze the freeze-expandable liquid, and if necessary, it is split in the scribe groove.

Further, the gist of another semiconductor device manufacturing method according to the present invention is that after a plurality of semiconductor elements are formed on a glass substrate, a desired glass substrate having the plurality of semiconductor elements is formed. Form a scribe groove of the pattern,
Then, in the method of manufacturing a semiconductor device having a semiconductor element by splitting the glass substrate, after forming the scribe groove, at least the glass substrate in the scribe groove is cooled to an extremely low temperature, and then the cooled scribe is used. The purpose is to heat a part or the whole area of the groove and to divide the groove in the scribe groove if necessary.

Further, the gist of another method of manufacturing a semiconductor device according to the present invention is that after a plurality of semiconductor elements are formed on a glass substrate, a desired glass substrate having the plurality of semiconductor elements is formed. Form a scribe groove of the pattern,
Then, in the method of manufacturing a semiconductor device including a semiconductor element by breaking the glass substrate, after forming the scribe groove, at least the glass substrate in the scribe groove portion is heated, and then one of the heated scribe groove is formed. Part or the whole region is cooled to an extremely low temperature and, if necessary, is divided by the scribe groove.

[0014]

According to the method of manufacturing a semiconductor device of the present invention, a plurality of semiconductor elements are first formed on a glass substrate having a large area by a known method, and then the semiconductor elements are separated into individual semiconductor elements by a diamond cutter or the like on the surface of the glass substrate. A cut-shaped or groove-shaped scribe groove is formed in a predetermined pattern. Then, a freeze-expandable liquid whose volume expands by freezing, for example, pure water is applied to a part or the entire area of the scribe groove, and the liquid buryes a part or the entire area of the scribe groove. Then, the glass substrate is immersed in a cryogenic liquid such as liquid nitrogen, or a gas or mist-like cryogenic body is sprayed onto the glass substrate to instantly cool it. By this cooling, the liquid applied to a part or the whole area of the scribe groove is frozen, and both walls of the scribe groove are spread by the expansion force of the frozen liquid to break the glass substrate along the scribe groove. At that time, since the glass substrate is cooled to an extremely low temperature and the strength of the glass substrate is weakened by the low temperature brittleness, the breakage of the glass substrate proceeds smoothly. Further, since the breakage of the glass substrate is the expansive force of the liquid that acts on the scribe groove, the torsional stress does not act on the semiconductor device. Then, when the glass substrate is not completely broken, if necessary, both side portions sandwiching the scribe groove are supported and split to manufacture individual semiconductor devices.

According to another method of manufacturing a semiconductor device of the present invention, after forming a scribe groove in a glass substrate, at least the glass substrate in the scribe groove portion, that is, the glass substrate in a part or the whole area of the scribe groove portion, or the scribe groove is formed. The entire glass substrate including it is cooled using liquid nitrogen or the like to shrink the glass substrate around the scribe groove. Next, a point-shaped or linear-shaped heat source is applied to the shrunk glass substrate in the scribe groove to heat a part or the whole region of the scribe groove, and the glass substrate in the scribe groove is subjected to a thermal shock locally or over the entire region. At the same time, the glass substrate is thermally expanded to divide the glass substrate along the scribe groove. Further, since the breakage of the glass substrate is a thermal expansion force that acts on the scribe groove, the torsional stress does not act on the semiconductor device. Then, when the glass substrate is not completely broken, if necessary, both side portions sandwiching the scribe groove are supported and split to manufacture individual semiconductor devices.

Further, in another method of manufacturing a semiconductor device according to the present invention, after the scribe groove is formed in the glass substrate, at least the glass substrate in the scribe groove portion, that is, the glass substrate in a part or the whole area of the scribe groove portion, or the scribe groove is formed. The entire glass substrate including is heated with an electric iron using a linear heat source or a hot plate to expand the glass substrate around the scribe groove. Next, a cryogenic liquid or the like is applied to the expanded glass substrate in the scribed groove in a spot or linear manner to cool a part or the whole area of the scribed groove, and the glass substrate in the scribed groove is heated locally or over the entire area. Give a shock and heat shrink,
The glass substrate is divided along the scribe groove. At that time, since the breakage of the glass substrate is a thermal contraction force acting on the scribe groove, the torsional stress does not act on the semiconductor device. Then, when the glass substrate is not completely broken, if necessary, both side portions sandwiching the scribe groove are supported and split to manufacture individual semiconductor devices.

[0017]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, an embodiment of a method for manufacturing a semiconductor device according to the present invention will be described in detail with reference to the drawings by taking a linear image sensor as an example. 2 (a) and 2 (b), reference numeral 10 is an example of a linear image sensor manufactured according to the present invention.
The linear image sensor 10 is roughly composed of a glass substrate 12
A photodiode 14 as a semiconductor device and a blocking diode 16 as a switching element are one-dimensionally formed on the upper portion thereof. These blocking diodes 16 are connected to each other by a common electrode 18 which is common for every fixed number of electrodes.
A block 20 is configured with a fixed number of blocking diodes 16 connected to the common electrode 18 and a fixed number of photodiodes 14 corresponding to the blocking diodes 16 as one unit. Further, a matrix wiring 22 is formed on the glass substrate 12, and each block 20 is formed by the matrix wiring 22.
The photodiodes 14 located at the same relative position are commonly connected to each other. Further, the photodiode 14 and the corresponding blocking diode 16 are connected in series with opposite polarities by the connection electrode 24, and the image sensor 10 is constituted by the whole of them.

In the photodiode 14 and the blocking diode 16, semiconductor portions 30 and 32 of amorphous silicon type semiconductor are formed on the patterned lower electrode 26 and common electrode 18, respectively, and further deposited. An upper electrode I is formed on the semiconductor portions 30 and 32.
The transparent electrodes 34 and 36 such as TO are adhered and configured. Next, the photodiode 14 and the blocking diode 16 are covered with a transparent interlayer insulating film 38 made of silicon oxide or the like. The connection electrodes 24 and the matrix wiring 2 are formed on the transparent interlayer insulating film 38.
2 is patterned and formed, and the connection electrode 2
4 is transparent electrodes 34, 36 and contact holes 40, 42
The photodiode 14 and the blocking diode 16 are connected in series with opposite polarities by the connection electrode 24. On the other hand, the matrix wiring 22 formed on the transparent interlayer insulating film 38 is electrically connected to the photodiode 14 via the contact hole 44 provided at the tip of the electrode wire 28 drawn from the lower electrode 26 of the photodiode 14. It is connected to the. Further, the common electrode 18 has an extraction electrode 46 formed on an electrode pad portion which is integrally formed and is connected to an external device.
Further, a transparent insulating protective film 48 is deposited on the lead-out electrode 46 and the electrode pad portion (not shown) to protect the above-mentioned components. As the material of the insulating protective film 48, an inorganic insulating material such as silicon nitride or silicon oxynalide, or an organic insulating material such as polyimide resin, epoxy resin, or phenol resin is used, or these inorganic insulating material and organic insulating material are used. A combination of is used.

Since such an image sensor 10 is manufactured through many steps, it is preferable to manufacture many image sensors 10 at once in order to reduce the manufacturing cost. Therefore, as shown in FIG. 3, a large-area glass substrate 13 is used, and a plurality of image sensors 10 are formed on the glass substrate 13. A large-area glass substrate 13 having a thickness of about 0.3 to 1.1 mm is used, and the length of the glass substrate 13 is the length of the linear image sensor 10 in the main scanning direction (for example, 200 to 340 mm). ), And its width is set larger than a value obtained by multiplying the width of the linear image sensor 10 in the sub-scanning direction (1.0 to 4.0 mm, for example, 2.0 mm) by the number of manufactured sensors 10. There is. That is, the length of the glass substrate 13 differs depending on whether the manufactured linear image sensor 10 is for A4 size, B4 size, A3 size, etc., and is selected according to the size to be manufactured.

Using such a large-area glass substrate 13, a plurality of linear image sensors 10 having the constructions shown in FIGS. 2 (a) and 2 (b) described above are simultaneously formed by a known method. As shown in FIG. 3, a scribe groove 50 is formed on the surface of the glass substrate 13, and the scribe groove 50 is cut off to form each linear image sensor 10. First, as shown in FIG. 4, the glass substrate 13 is separated by linearly moving the linear image sensor 10 and the surface of the glass substrate 13 between the linear image sensors 10 by applying a diamond cutter 52 having a sharp tip to the surface. Then, the scribe groove 50 is attached.

The glass substrate 13 provided with the scribe groove 50 has a scribe groove 50 as shown in FIG. 1 (a).
The freeze-expandable liquid 54 is applied to the entire area of the above, or the freeze-expandable liquid 54 is applied to a part of the scribe groove 50 as shown in FIG. Freeze-expandable liquid 54
As the liquid, a liquid whose volume is expanded by freezing, such as pure water, is used, and a liquid excellent in adhesion to the glass substrate 13 is particularly preferable. After the freeze-expandable liquid 54 is applied to the whole or part of the scribe groove 50, the glass substrate 13 is immersed in a cooling tank containing a cryogenic liquid such as liquid nitrogen or CFC, or the glass substrate 13 Only one surface side of 13 such as the back surface side where the scribe groove 50 is not formed is brought into contact with the cryogenic liquid, or the glass substrate 1
By exposing the whole 3 to an extremely low temperature atmosphere, the glass substrate 1
3 is sufficiently cooled to an extremely low temperature, and the liquid 54 applied to the scribe groove 50 is frozen. Glass substrate 1
By cooling 3 to an extremely low temperature, the glass substrate 13 is subjected to thermal shock and is made brittle, and the low temperature brittleness makes the glass substrate 13 easy to crack. Then, the liquid 54 applied to the scribe groove 50 freezes and expands to act to spread both walls of the scribe groove 50, and the expansion force breaks the glass substrate 13 along the scribe groove 50.
At that time, when the glass substrate 13 is completely broken and is not separated, the glass substrate 13 is broken. That is, the ears 56 of the glass substrate 13 on both sides of the scribe groove 50 to be folded are sandwiched and fixed with a fingertip of a worker or a jig.
It is bent and broken around the scribe groove 50.

Since the glass substrate 13 is divided by the expansive force of the volume acting in the direction perpendicular to the direction of the scribe groove 50, the glass substrate 13 is linearly and sharply cracked along the scribe groove 50, and separated into individual lengths. The glass substrate 12 of the thin linear image sensor 10 does not break into plural pieces on the way. Further, when the glass substrate 13 is divided, an excessive bending load does not act, so that the photodiode 14 and the blocking diode 16 formed on the glass substrate 13 or the matrix wiring 22 are formed.
It does not damage the Further, in the obtained linear image sensor 10, the cutting line of the glass substrate 12 is sharp, so that when it is incorporated in a module or the like, the alignment is easy and the workability is improved. In particular, when a large-sized glass substrate 13 is split, a cutting margin is hardly required, so that there is no waste and a large number of linear image sensors 10 that can be manufactured from a glass substrate 13 of a fixed size can be taken. it can. Further, by making the thickness of the glass substrate 13 thin, even if the width in the sub-scanning direction is made thin, it is possible to make a fold and to downsize the sensor.

Although the embodiments of the present invention have been described in detail above, the present invention can be implemented in other modes. For example, as shown in FIG. 5, the scribe groove 58 formed on the glass substrate 13 may have a U-shaped cross-sectional shape. In the case of the scribe groove 58 having such a shape, the frozen liquid 54 is The expansive force acts on both walls of the scribe groove 58 without waste, and the glass substrate 13 can be smoothly divided. A scribe groove 5 with a U-shaped cross section
8 can also be formed by a scriber composed of a diamond cutter or the like, but a groove is formed by using a dicer for cutting a silicon wafer or the like so as to obtain a groove depth approximately the same as that obtained by the scriber. You may.

As shown in FIG. 6, the glass substrate 13
After inserting the scribe groove 50 into the scribe groove 50
Or the entire glass substrate 13 including the above is cooled to a very low temperature, or only a part or the whole area of the glass substrate 13 in the scribe groove 50 is cooled to a very low temperature, and then one end of the cooled scribe groove 50 is electrically troweled. The glass substrate 13 may be heated by 62 or the like, and the glass substrate 13 may be cracked along the scribe groove 50 due to strain due to thermal expansion of the heating portion. In this example, if the glass substrate 13 was not completely divided by the cracks formed along the scribed groove 50, the operator would break the glass substrate by the conventional method, but the force associated with this breaking is small. Therefore, the glass substrate 12 (13) can be easily broken and the semiconductor device divided by the bending force is not twisted.
The semiconductor element formed above is not damaged.

Further, as shown in FIG. 6, after the glass substrate 13 in which the scribe groove 50 is similarly formed is cooled to an extremely low temperature, the whole area of the scribe groove 50 is heated by a linear heat source 64 made of a nichrome wire or the like. However, the glass substrate 13 may be split along the scribe groove 50 due to thermal expansion strain of the glass substrate 13 in the scribe groove 50. In this example, the thermal expansion strain is generated in the entire area of the scribe groove 50, so that a substantially uniform force acts on the scribe groove 50 to cause cracking and a clean fracture surface can be obtained. In this way, after cooling at least the scribed groove 50 portion, when heating a part or the whole area of the scribed groove 50 and dividing by the thermal expansion strain, the surface to be heated may be the side where the scribed groove 50 is formed. Alternatively, it may be the back side.

Here, the heating applied to the scribed groove portion formed on the glass substrate may be electric heating as described above, or may be laser or electron beam or the like without any limitation. As the heat source, a heat source that has a focusing property so that it does not affect the semiconductor element and that can heat instantaneously is preferable.

Contrary to the above, in the method for manufacturing a semiconductor device according to the present invention, after forming the scribed groove in the glass substrate, at least the scribed groove portion is heated, and then the heated scribed groove portion is cooled to an extremely low temperature. Then, the glass substrate may be split at the scribe groove portion due to the strain caused by the contraction of the cooling portion. In the case of this example, the entire glass substrate may be placed on a hot plate for heating, or only the scribe groove portion may be heated by bringing the above-mentioned linear heat source 64 into contact with the scribe groove portion or its back surface side. Further, for cooling the scribe groove, for example, a cryogenic liquid such as liquefied nitrogen is dropped into the scribe groove, sprayed, or brought into contact with a cryogenic solid refrigerant,
It is preferably done instantly.

Next, in the linear image sensor to which the method of manufacturing a semiconductor device according to the present invention is applied, the lower electrode formed on the glass substrate forms a connection electrode for connecting the photodiode and the blocking diode in series in opposite polarities. The wiring electrode and the upper extraction electrode may be provided on the upper electrode side of each via an interlayer insulating film.

Further, although the linear image sensor having the two semiconductor element groups of the photodiode and the blocking diode has been described in the above embodiments, the present invention is also applied to the linear image sensor composed of a single semiconductor element group. However, the invention is not limited to the linear image sensor, and it goes without saying that other semiconductor devices may be used. Further, the semiconductor layer is not limited to the pin type amorphous silicon semiconductor layer, but may be amorphous silicon a-Si, hydrogenated amorphous silicon a-Si: H, hydrogenated amorphous silicon carbide a-SIC: H, amorphous silicon. In addition to nitrides, amorphous or microcrystalline amorphous silicon semiconductors made of alloys of silicon and other elements such as carbon, germanium and tin are pin type, nip type, ni type, pn type,
MIS type, heterojunction type, homojunction type, Schottky barrier type, or a combination of these may be used as the semiconductor layer, and other than amorphous silicon type, for example, GaAs type or CdS type semiconductor element linear It may be an image sensor. Further, as the material of the lower electrode, besides chromium, titanium, nickel or the like may be used, and further, as the material of the interlayer insulating film or the insulating protective film, silicon oxide, silicon nitride, silicon oxynalide or the like may be used. Well, neither is limited. Further, the patterning of the amorphous silicon-based semiconductor layer or the interlayer insulating film is most preferably performed by dry etching such as reactive ion etching, but it goes without saying that wet etching may be used if necessary. In addition, the present invention can be carried out in a mode in which various improvements, modifications and variations are added based on the knowledge of those skilled in the art without departing from the spirit of the present invention.

[0030]

According to the method of manufacturing a semiconductor device of the present invention, a scribe groove having a desired pattern is formed on a glass substrate, and then a freeze-expandable liquid is applied to a part or the whole area of the scribe groove, and then the scribe groove is formed. The glass substrate is placed in a cooling tank containing a cryogenic liquid such as liquid nitrogen, or the cryogenic liquid is sprayed, or a cryogenic gas is jetted to cool the glass substrate and the glass substrate is attached to the scribe groove. Since the freeze-expandable liquid is frozen and the expansion force of the frozen liquid breaks the glass substrate along the scribe groove, the divided semiconductor device is not subjected to a twisting force or the like. It is possible to provide a highly reliable semiconductor device which can be broken and has no damage such as peeling or cracking of the thin film semiconductor element from the glass substrate. At that time, since the scribe groove portion of the glass substrate is subjected to thermal shock and embrittled at a low temperature, the glass substrate can be easily divided. Further, the glass substrate can be simultaneously broken by a plurality of scribe groove portions, and moreover, even if it cannot be completely divided, it can be easily broken and the productivity is improved. Further, since the force required for breaking the glass substrate is small, it is possible to break even if the width of the semiconductor device in the sub-scanning direction is as small as 3 mm or less, and the length in the main scanning direction is as long as 100 mm or more. Even in this case, it is possible to make a split. Further, even if the thickness of the glass substrate is as thick as 0.7 mm or more, it is possible to break the glass substrate, and thus the design range associated with the manufacture of the semiconductor device is widened.

Further, after at least the scribe groove portion of the glass substrate is cooled to an extremely low temperature or conversely heated, the cooling portion or the heating portion is heated or cooled, respectively, and the glass substrate is broken by local thermal expansion or thermal contraction. By doing so, the same effect as described above can be obtained.

[Brief description of drawings]

FIG. 1 is a diagram for explaining a method for manufacturing a semiconductor device according to the present invention, in which FIG. 1 (a) is a perspective view of relevant parts showing a state in which a freeze-expandable liquid is applied to the entire scribe groove; Figure
(b) is a perspective view of a main part showing a state where a freeze-expandable liquid is applied to a part of the scribe groove.

2A and 2B are diagrams showing an example of a semiconductor device to which the present invention is applied. FIG. 2A is a cross-sectional explanatory view of a main part and FIG. 2B is a plan view of the main part.

3A and 3B are views for explaining a glass substrate used for manufacturing a semiconductor device according to the present invention, where FIG. 3A is a plan view showing the glass substrate of the semiconductor device, and FIG. 3B is a semiconductor device. FIG. 3 is a plan view showing a large-area glass substrate for manufacturing a glass.

FIG. 4 is a perspective view of a principal part for explaining a method of forming a scribe groove in a method of manufacturing a semiconductor device according to the present invention.

FIG. 5 is an enlarged front view of essential parts showing another shape of the scribe groove in the method for manufacturing a semiconductor device according to the present invention.

FIG. 6 is a perspective view for explaining a method of locally heating a scribe groove, which is another embodiment of the method of manufacturing a semiconductor device according to the present invention.

FIG. 7 is a perspective view for explaining a method of heating the entire scribe groove, which is another embodiment of the method for manufacturing a semiconductor device according to the present invention.

FIG. 8 is an enlarged cutaway front view of an essential part for explaining a problem in a conventional method for cutting a glass substrate of a semiconductor device.

9A and 9B are views for explaining a conventional method for manufacturing a semiconductor device, in which FIG. 9A is a front view of a main part and FIG. 9B is a plan view of the main part.

[Explanation of symbols]

 10; Linear image sensor (semiconductor device) 12; Glass substrate 13; Large area glass substrate 50, 58; Scribing groove 54; Freeze-expandable liquid 56; Ear 62; Electric trowel 64; Stroke heat source

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[Procedure amendment]

[Submission date] December 12, 1991

[Procedure Amendment 1]

[Document name to be amended] Statement

[Name of item to be corrected] 0025

[Correction method] Change

[Correction content]

Further, as shown in FIG. 7, after the glass substrate 13 in which the scribe groove 50 is similarly formed is cooled to an extremely low temperature, the entire area of the scribe groove 50 is heated by a linear heat source 64 made of a nichrome wire or the like. However, the glass substrate 13 may be split along the scribe groove 50 due to thermal expansion strain of the glass substrate 13 in the scribe groove 50. In this example, the thermal expansion strain is generated in the entire area of the scribe groove 50, so that a substantially uniform force acts on the scribe groove 50 to cause cracking and a clean fracture surface can be obtained. In this way, after cooling at least the scribed groove 50 portion, when heating a part or the whole area of the scribed groove 50 and dividing by the thermal expansion strain, the surface to be heated may be the side where the scribed groove 50 is formed. Alternatively, it may be the back side.

Continuation of front page (51) Int.Cl. ⁵ Identification number Office reference number FI technical display location H01L 31/02

Claims (3)

[Claims] 1. A semiconductor device is formed by forming a plurality of semiconductor elements on a glass substrate, forming scribe grooves in a desired pattern on the glass substrate on which the plurality of semiconductor elements are formed, and then breaking the glass substrate. In the method of manufacturing a semiconductor device including an element, after forming the scribe groove, a freeze-expandable liquid is applied to one end or the entire area of the scribe groove, and then the freeze-expandable liquid is cooled to an extremely low temperature. A method for manufacturing a semiconductor device, comprising: 2. A semiconductor device is formed by forming a plurality of semiconductor elements on a glass substrate, forming a scribe groove in a desired pattern on the glass substrate on which the plurality of semiconductor elements are formed, and then breaking the glass substrate. In the method of manufacturing a semiconductor device having an element, after forming the scribe groove, at least the glass substrate of the scribe groove portion is cooled to an extremely low temperature, and then a part or the whole region of the cooled scribe groove is heated. A method for manufacturing a semiconductor device, characterized in that the semiconductor device is folded at the scribe groove as needed. 3. A semiconductor device is formed by forming a plurality of semiconductor elements on a glass substrate, forming scribe grooves in a desired pattern on the glass substrate on which the plurality of semiconductor elements are formed, and then breaking the glass substrate. In a method for manufacturing a semiconductor device having an element, after forming the scribe groove, at least the glass substrate of the scribe groove portion is heated, and then a part or the whole region of the heated scribe groove is cooled to an extremely low temperature. A method for manufacturing a semiconductor device, characterized in that the semiconductor device is folded at the scribe groove as needed.