JPH0499867A - Manufacturing device for semiconductor device - Google Patents
Manufacturing device for semiconductor deviceInfo
- Publication number
- JPH0499867A JPH0499867A JP21609390A JP21609390A JPH0499867A JP H0499867 A JPH0499867 A JP H0499867A JP 21609390 A JP21609390 A JP 21609390A JP 21609390 A JP21609390 A JP 21609390A JP H0499867 A JPH0499867 A JP H0499867A
- Authority
- JP
- Japan
- Prior art keywords
- rings
- space
- cooling water
- sputtering
- rotary pump
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 12
- 238000004519 manufacturing process Methods 0.000 title claims description 4
- 238000004544 sputter deposition Methods 0.000 claims abstract description 23
- 238000007789 sealing Methods 0.000 claims abstract description 13
- 239000000498 cooling water Substances 0.000 claims abstract description 11
- 239000000758 substrate Substances 0.000 claims description 6
- 239000010409 thin film Substances 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 2
- 230000000694 effects Effects 0.000 abstract description 4
- 238000000034 method Methods 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 4
- 238000005086 pumping Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000004868 gas analysis Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005478 sputtering type Methods 0.000 description 1
- 238000013022 venting Methods 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、半導体装置の製造装置に関し、特に半導体基
板に金属や半導体の薄膜を形成するスパッタ装置に関す
る。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor device manufacturing apparatus, and particularly to a sputtering apparatus for forming a metal or semiconductor thin film on a semiconductor substrate.
従来、この種のスパッタ装置は、第３図の概略図に示す
様にスパッタチャンバ１と、荒引き用のローターリ−ポ
ンプ２および本引き用のクライオポンプ３の排気系と、
スパッタ源のＡｒライン４およびチャンバーベント用の
Ｎ２のライン５のガス系と、電源６とを有し、スパッタ
チャンバー１の内部には、陰極側にターゲット７と陽極
側に半導体基板１７を載せる半導体基板ホルダー（陽極
部）８とを備え、その間にシャッター９を有している。Conventionally, this type of sputtering apparatus has, as shown in the schematic diagram of FIG. 3, a sputtering chamber 1, an exhaust system for a rotary pump 2 for rough pumping and a cryopump 3 for main pumping,
The sputtering chamber 1 has a gas system including an Ar line 4 for a sputtering source and an N2 line 5 for venting the chamber, and a power supply 6, and inside the sputtering chamber 1 there is a semiconductor device with a target 7 on the cathode side and a semiconductor substrate 17 on the anode side. A substrate holder (anode part) 8 is provided, and a shutter 9 is provided therebetween.
また、陰極部１０は絶縁部１８を介してスパッタチャン
バー１に取り付けられている。Further, the cathode section 10 is attached to the sputtering chamber 1 via an insulating section 18.
特に陰極側のターゲット７は、スパッタリング中に陽イ
オンによって激しく叩かれるため温度が上昇し、ターゲ
ット７が溶ける場合があるので、陰極部］０（ターゲッ
トの裏面側）には冷却水１１を流して冷却している。In particular, the target 7 on the cathode side is violently hit by cations during sputtering, so the temperature rises and the target 7 may melt. It's cooling down.
第４図に、第３図Ａ部の拡大図を示ずが、ターゲット７
は陰極部１０にボルト１２で固定されていて、冷却水は
シール面に設けられた○リング１３によってシールされ
ている。Although an enlarged view of section A in FIG. 3 is not shown in FIG. 4, target 7
is fixed to the cathode part 10 with bolts 12, and the cooling water is sealed by a ring 13 provided on the sealing surface.
上述した従来のスパッタ装置では、冷却水のシールを一
重又は二重のＯリングで行なっているが、スパッタチャ
ンバーが１０−７〜１０−８［Ｔｏｒｒ）台の高真空に
なっている場合、スパッタチャンバー内の残留ガスをマ
スフィルターで分析すると、第５図のグラフに示すよう
にＨ２゜（質量数１８）が多いことがある。特に、冷却
水のシール面やＯリングに傷や小さなごみが付着してい
る場合には、冷却水がスパッタチャンバー内で微少リー
クしてしまうという問題があった。In the conventional sputtering apparatus described above, cooling water is sealed with a single or double O-ring, but when the sputter chamber is in a high vacuum of 10-7 to 10-8 Torr, the sputtering When the residual gas in the chamber is analyzed using a mass filter, as shown in the graph of FIG. 5, there may be a large amount of H2° (mass number 18). Particularly, when there are scratches or small particles attached to the sealing surface of the cooling water or the O-ring, there is a problem in that the cooling water slightly leaks inside the sputtering chamber.
この様にＨ２Ｃがスパッタチャンバー内にリークした場
合、薄膜形成において薄膜中にＨ２Ｃが取り込まれるこ
とにより、比抵抗を下げたり、下地段差被覆度を低下さ
せるなどの欠点がある。If H2C leaks into the sputtering chamber in this way, H2C will be incorporated into the thin film during thin film formation, resulting in disadvantages such as lowering the specific resistance and lowering the level coverage of the base layer.
本発明のスパッタ装置は、陰極部の冷却水のシール部に
２重のＯリングを設け、その間のシール面に微少リーク
水分を真空引きする荒引きラインを備えている。The sputtering apparatus of the present invention is provided with a double O-ring at the cooling water sealing part of the cathode part, and a roughing line for vacuuming minute leakage moisture from the sealing surface between the double O-rings.
次に本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.
第１図は本発明の一実施例のスパッタ装置の概略図であ
る。また、第２図は第１図Ａ部の拡大図である。FIG. 1 is a schematic diagram of a sputtering apparatus according to an embodiment of the present invention. Moreover, FIG. 2 is an enlarged view of section A in FIG. 1.
本発明のスパッタ装置は、陰極部１０に流れている冷却
水１１のシール効果を高めるために、Ｏリング１３を２
重にし、尚且つこの２本のＯリング１３間のシール面の
間隙の真空引きを行なう。The sputtering apparatus of the present invention includes two O-rings 13 in order to enhance the sealing effect of the cooling water 11 flowing into the cathode section 10.
Then, the gap between the sealing surfaces between the two O-rings 13 is evacuated.
そのために、陰極部１０のＯリング１３の間にシール面
に達する穴加工を施し、この穴に荒引きライン２０をつ
なぎ、荒引きバルブ■１９を介してロータリーポンプ２
に接続されている。なお、Ｏリング１３を３重にし、２
個所に穴加工を施してもよい。For this purpose, a hole is formed between the O-rings 13 of the cathode section 10 to reach the sealing surface, a roughing line 20 is connected to this hole, and a roughing line 20 is connected to the rotary pump 2 through the roughing valve 19.
It is connected to the. In addition, the O-ring 13 is triple-layered, and
Holes may be drilled at certain locations.
スパッタチャンバー１が本引きバルブ１５が開いてクラ
イオポンプ３で高真空に真空引きされている間（荒引き
バルブ■１４とフォアバルブ１６は閉じている）は、荒
引きバルブ■１９が開いてロータリーポンプ２でＯリン
グ１３間の間隙を常時荒引きし、この間隙は中間真空（
１００ｍＴ ｏ ｒ ｒ以下）に保たれる。以上、本実
施例は陰極部のシール面を真空引きする構造について述
べてきたが、陽極部に同様の構造を設けることももちろ
ん可能である。While the main vacuum valve 15 is open and the sputter chamber 1 is being evacuated to a high vacuum by the cryopump 3 (the rough vacuum valve 14 and the fore valve 16 are closed), the rough vacuum valve 19 is open and the rotary Pump 2 is used to constantly roughen the gap between O-rings 13, and this gap is filled with an intermediate vacuum (
(below 100 mT o r r). Although this embodiment has described the structure in which the sealing surface of the cathode part is evacuated, it is of course possible to provide a similar structure to the anode part.
以上説明したように本発明は、陰極部の冷却水のシール
を２重Ｏリングで行ない、Ｏリングの間の間隙をロータ
リーポンプで常時荒引きすることにより、スパッタチャ
ンバーへのＨ２Ｃの微少リークを少なくでき、スパッタ
チャンバー中のＨ２Ｃの残留ガスを低減できるという効
果を有する。As explained above, the present invention seals the cooling water in the cathode part with a double O-ring, and constantly roughens the gap between the O-rings with a rotary pump, thereby preventing minute leaks of H2C into the sputtering chamber. This has the effect of reducing residual H2C gas in the sputtering chamber.
第１図は本発明の一実施例のスパッタ装置の概略図、第
２図は第１図Ａ部の拡大図、第３図は従来のスパッタ装
置の概略図、第４図は第３図Ａ部の拡大図、第５図は従
来のスパッタ装置のチャンバー内部のマスフィルタによ
る残留ガス分析結果を示すグラフである。
１・・・スパッタチャンバー、２・・・ロータリーポン
プ、３・・・クライオポンプ、４・・・Ａｒライン、５
・・・Ｎ２ライン、６・・・電源、７・・・ターゲット
、８・・・半導体基板ホルダー（陽極部〉、９・・・シ
ャッター１０・・・陰極部、１１・・・冷却水、１２・
・・ボルト、１３・・・Ｏリング、１４・・・荒引きバ
ルブ■、１５・・・本引きバルブ、１６・・・フォアバ
ルブ、１７・・・半導体基板、１８・・・絶縁部、１９
・・・荒引きバルブ■、２０・・・荒引きライン。Fig. 1 is a schematic diagram of a sputtering apparatus according to an embodiment of the present invention, Fig. 2 is an enlarged view of part A in Fig. 1, Fig. 3 is a schematic diagram of a conventional sputtering apparatus, and Fig. 4 is Fig. 3A. FIG. 5 is a graph showing the results of residual gas analysis using a mass filter inside the chamber of a conventional sputtering apparatus. 1... Sputter chamber, 2... Rotary pump, 3... Cryopump, 4... Ar line, 5
... N2 line, 6... Power supply, 7... Target, 8... Semiconductor substrate holder (anode section), 9... Shutter 10... Cathode section, 11... Cooling water, 12・
... Bolt, 13... O-ring, 14... Roughing valve ■, 15... Main pulling valve, 16... Forevalve, 17... Semiconductor substrate, 18... Insulating part, 19
... Roughing valve ■, 20... Roughing line.
Claims (1)
導体装置の製造装置において、陰極部の冷却水のシール
面に微少リーク水分を真空引きするラインを有すること
を特徴とする半導体装置の製造装置。What is claimed is: 1. A semiconductor device manufacturing device for forming a thin film of metal or semiconductor on a semiconductor substrate by sputtering, characterized in that the semiconductor device manufacturing device has a line for vacuuming minute leakage moisture on a cooling water sealing surface of a cathode part.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2216093A JP2654241B2 (en) | 1990-08-16 | 1990-08-16 | Semiconductor device manufacturing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2216093A JP2654241B2 (en) | 1990-08-16 | 1990-08-16 | Semiconductor device manufacturing equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0499867A true JPH0499867A (en) | 1992-03-31 |
| JP2654241B2 JP2654241B2 (en) | 1997-09-17 |
Family
ID=16683141
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2216093A Expired - Fee Related JP2654241B2 (en) | 1990-08-16 | 1990-08-16 | Semiconductor device manufacturing equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2654241B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102004051684A1 (en) * | 2004-10-23 | 2006-04-27 | Krauss-Maffei Kunststofftechnik Gmbh | Processing device with high or low pressure chamber |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02166274A (en) * | 1988-12-20 | 1990-06-26 | Mitsubishi Electric Corp | Vacuum film forming device |
-
1990
- 1990-08-16 JP JP2216093A patent/JP2654241B2/en not_active Expired - Fee Related
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02166274A (en) * | 1988-12-20 | 1990-06-26 | Mitsubishi Electric Corp | Vacuum film forming device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102004051684A1 (en) * | 2004-10-23 | 2006-04-27 | Krauss-Maffei Kunststofftechnik Gmbh | Processing device with high or low pressure chamber |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2654241B2 (en) | 1997-09-17 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |