JPH0483402A - High frequency circuit substrate device - Google Patents
High frequency circuit substrate deviceInfo
- Publication number
- JPH0483402A JPH0483402A JP2198591A JP19859190A JPH0483402A JP H0483402 A JPH0483402 A JP H0483402A JP 2198591 A JP2198591 A JP 2198591A JP 19859190 A JP19859190 A JP 19859190A JP H0483402 A JPH0483402 A JP H0483402A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- synthetic resin
- dielectric substrate
- dielectric
- high frequency
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 85
- 229920003002 synthetic resin Polymers 0.000 claims description 34
- 239000000057 synthetic resin Substances 0.000 claims description 34
- 239000004020 conductor Substances 0.000 abstract description 16
- 230000006866 deterioration Effects 0.000 description 4
- 239000003365 glass fiber Substances 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 239000011889 copper foil Substances 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 235000014121 butter Nutrition 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0213—Electrical arrangements not otherwise provided for
- H05K1/0237—High frequency adaptations
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/14—Structural association of two or more printed circuits
- H05K1/142—Arrangements of planar printed circuit boards in the same plane, e.g. auxiliary printed circuit insert mounted in a main printed circuit
Landscapes
- Structure Of Printed Boards (AREA)
- Mounting Of Printed Circuit Boards And The Like (AREA)
- Waveguides (AREA)
Abstract
Description
【発明の詳細な説明】
［発明の目的］
（産業上の利用分野）
この発明は、例えばマイクロ波帯用増幅器等のマイクロ
波集積回路の形成された誘電体基板をケース等の取付体
に取付けるのに用いる高周波回路基板装置に関する。[Detailed Description of the Invention] [Object of the Invention] (Industrial Application Field) This invention is directed to a method for attaching a dielectric substrate on which a microwave integrated circuit such as a microwave band amplifier is formed to a mounting body such as a case. The present invention relates to a high frequency circuit board device used for.
（従来の技術）
一般に、マイクロ波集積回路は、第５図に示すように高
誘電率のアルミナ等のセラミックを用いた誘電体基板１
が用いられ、この誘電体基板１の一方面にマイクロスト
リップ導体等で所望の回路パターン１ａが形成される。(Prior Art) Generally, a microwave integrated circuit is constructed using a dielectric substrate 1 made of a ceramic such as alumina having a high dielectric constant, as shown in FIG.
A desired circuit pattern 1a is formed on one side of the dielectric substrate 1 using a microstrip conductor or the like.
そして、この誘電体基板１の他方面には金属膜で接地導
体（図中では、図の都合上、図示せず）が形成される。A ground conductor (not shown in the figure for reasons of illustration) made of a metal film is formed on the other surface of the dielectric substrate 1.
そして、このようなマイクロ波集積回路は、その誘電体
基板１が機械的に脆いために、第６図に示すようにガラ
ス繊維エポキシ樹脂やガラス繊維フッ素樹脂等の合成樹
脂製基板２を介してケース等の取付体３に取付けられる
。すなわち、誘電体基板１は合成樹脂製基板２に積重さ
れて接着剤を用いて接合される（第５図参照）。この合
成樹脂製基板２には図示しない外部機器に接続されるマ
イクロストリップ導体等の接続導体２ａが形成されてお
り、この接続導体２ａが誘電体基板１の回路パターン１
ａに対して銅箔等の接続部材４を用いて接続される（第
５図参照）。そして、このように誘電体基板１の積重さ
れた合成樹脂製基板２は取付体３に螺子５を用いて固着
される（第６図参照）。Since the dielectric substrate 1 of such a microwave integrated circuit is mechanically fragile, it is not possible to install the microwave integrated circuit through a synthetic resin substrate 2 such as glass fiber epoxy resin or glass fiber fluororesin, as shown in FIG. It is attached to a mounting body 3 such as a case. That is, the dielectric substrate 1 is stacked on the synthetic resin substrate 2 and bonded using an adhesive (see FIG. 5). A connecting conductor 2a such as a microstrip conductor that is connected to an external device (not shown) is formed on this synthetic resin substrate 2, and this connecting conductor 2a is connected to the circuit pattern 1 of the dielectric substrate 1.
A is connected using a connecting member 4 such as copper foil (see FIG. 5). The synthetic resin substrate 2 with the dielectric substrates 1 stacked in this manner is fixed to the mounting body 3 using screws 5 (see FIG. 6).
ここで、誘電体基板１は、その接地導体（図示せず）が
合成樹脂製基板２に形成されるスルーホール２ｂを介し
て取付体３に接地される。Here, a ground conductor (not shown) of the dielectric substrate 1 is grounded to the mounting body 3 through a through hole 2b formed in the synthetic resin substrate 2.
しかしながら、上記高周波回路基板装置では、誘電体基
板１を合成樹脂製基板２に積重して取付ける構成上、そ
の厚さ寸法の薄形化を図ることが困難で、厚形となると
いう問題を有していた。また、これによれば、誘電体基
板１の回路パターン１ａと合成樹脂製基板２の接続導体
２ａ間に段差が生じ、しかも、相互間を接続する接続部
材４がインピーダンス成分を持つために、相互間でイン
ピーダンス不整合が起こり、マイクロ波集積回路におけ
る高周波特性の劣化を招くという問題を有していた。さ
らに、これによれば、誘電体基板１の接地導体（図示せ
ず）を合成樹脂製基板２のスルーホール２ｂを介して取
付体３に接地するように構成した場合、該スルーホール
２ｂの持つインダクタンス成分によって、そのマイクロ
波集積回路における伝送特性の劣化を招くという問題が
起こっていた。However, in the above-mentioned high-frequency circuit board device, since the dielectric substrate 1 is stacked and attached to the synthetic resin substrate 2, it is difficult to reduce the thickness of the device, and the problem is that the device becomes thick. had. Further, according to this, a step is created between the circuit pattern 1a of the dielectric substrate 1 and the connection conductor 2a of the synthetic resin substrate 2, and furthermore, since the connection member 4 that connects them has an impedance component, There has been a problem in that impedance mismatch occurs between the two, leading to deterioration of high frequency characteristics in the microwave integrated circuit. Further, according to this, when the ground conductor (not shown) of the dielectric substrate 1 is configured to be grounded to the mounting body 3 via the through hole 2b of the synthetic resin substrate 2, the through hole 2b has a A problem has arisen in that the inductance component causes deterioration of the transmission characteristics of the microwave integrated circuit.
（発明が解決しようとする課題）
以上述べたように、従来の高周波回路基板装置では、厚
形となると共に、誘電体基板と合成樹脂製基板の間にイ
ンピーダンス不整合が起こり、回路特性の劣化を招くと
いう問題を有していた。(Problems to be Solved by the Invention) As described above, conventional high-frequency circuit board devices are thick and impedance mismatch occurs between the dielectric substrate and the synthetic resin substrate, resulting in deterioration of circuit characteristics. This had the problem of inviting
この発明は上記の事情に鑑みてなされたもので、薄形化
の促進を図り得、且つ、誘電体基板と合成樹脂製基板の
間のインピーダンス整合を容易に採り得るようにした高
周波回路基板装置を提供することを目的とする。This invention was made in view of the above circumstances, and provides a high frequency circuit board device that can promote thinning and easily achieve impedance matching between a dielectric substrate and a synthetic resin substrate. The purpose is to provide
［発明の構成コ
（課題を解決するための手段）
この発明は、マイクロ波集積回路が形成されてなる誘電
体基板と、この誘電体基板が収容されて固着される凹部
が該誘電体基板の厚さ寸法に対応して設けられた取付体
に取付は支持される誘合成樹脂製基板とを備えて高周波
回路基板装置を構成したものである。[Structure of the Invention (Means for Solving the Problems) This invention provides a dielectric substrate on which a microwave integrated circuit is formed, and a recess in which the dielectric substrate is accommodated and fixed. A high-frequency circuit board device is constructed by including a dielectric synthetic resin substrate that is mounted and supported by a mounting body that is provided in accordance with the thickness dimension.
（作用）
上記構成によれば、マイクロ波集積回路が形成された誘
電体基板は合成樹脂製基板の凹部に収容されて埋設され
て固着されていることにより、その回路パータンが合成
樹脂製基板の接続導体と路間−面上に位置されている。(Function) According to the above configuration, the dielectric substrate on which the microwave integrated circuit is formed is accommodated in the recess of the synthetic resin substrate, buried, and fixed, so that the circuit pattern can be changed from that of the synthetic resin substrate. It is located on the surface between the connecting conductor and the path.
従って、合成樹脂製基板の厚さ寸法と略同様までの薄形
化が容易に実現されると共に、相互の接続箇所における
インピーダンス整合が容易に採り得る。Therefore, the thickness can be easily reduced to approximately the same thickness as the synthetic resin substrate, and impedance matching at mutual connection points can be easily achieved.
（実施例）
以下、この発明の実施例について、図面を参照して詳細
に説明する。(Example) Hereinafter, an example of the present invention will be described in detail with reference to the drawings.
第１図はこの発明の一実施例に係る高周波回路基板装置
を示すもので、第１図（ａ）は斜視図、同図（ｂ）は（
ａ）のＡ−Ａ−断面図である。FIG. 1 shows a high frequency circuit board device according to an embodiment of the present invention, FIG. 1(a) is a perspective view, and FIG. 1(b) is a (
It is an AA-sectional view of a).
図において、１０はマイクロ波集積回路の形成されたア
ルミナ等のセラミック製誘電体基板で、後述するように
ガラス繊維フッ素樹脂やガラス繊維エポキシ樹脂等の合
成樹脂製基板１１の所定位置に埋設される如く固着され
てケース等の取付体１２に取付けられる（第２図参照）
。すなわち、誘電体基板１０は、その一方面にマイクロ
波集積回路の回路パターン１０ａか形成され、その他方
面には金属膜等で接地導体（図の都合上、図示せず）が
形成される。一方、合成樹脂製基板１１には基板収容用
の凹部１１ａが誘電体基板１０の厚さ寸法に対応して形
成され、この凹部１１ａの所定位置には図示しない外部
機器に接続される接続パターン１１ｂが誘電体基板１０
の回路パターン１０ａに対応して形成される。そして、
凹部１１ａにはスルーホールｌｌｃか誘電体基板１０の
接地導体（図示せず）及び取付体１２の接地位置に対応
して形成される。In the figure, 10 is a dielectric substrate made of ceramic such as alumina on which a microwave integrated circuit is formed, and is embedded in a predetermined position of a substrate 11 made of synthetic resin such as glass fiber fluororesin or glass fiber epoxy resin, as will be described later. It is firmly fixed and attached to the mounting body 12 such as a case (see Fig. 2).
. That is, the dielectric substrate 10 has a circuit pattern 10a of a microwave integrated circuit formed on one side thereof, and a ground conductor (not shown for convenience of drawing) made of a metal film or the like on the other side. On the other hand, a recess 11a for accommodating the board is formed in the synthetic resin substrate 11 in accordance with the thickness dimension of the dielectric substrate 10, and a connection pattern 11b connected to an external device (not shown) is provided at a predetermined position of the recess 11a. is the dielectric substrate 10
The circuit pattern 10a is formed corresponding to the circuit pattern 10a. and,
A through hole llc is formed in the recess 11a corresponding to the grounding position of the ground conductor (not shown) of the dielectric substrate 10 and the mounting body 12.
上記構成において、誘電体基板１０は合成樹脂製基板１
１の凹部１１ａに、その接地導体（図示せず）が対向さ
れて収容され、例えば接着剤を用い′て接合される。こ
こで、誘電体基板１０は、その回路パターン１０ａが合
成樹脂製基板１１の接続パターン１１ｂと路間−面上に
位置され、該回路パターン１０ａが接続パターンｌｌｂ
に銅箔等の接続部材１３を介して接続される。この際、
誘電体基板１０の接地導体（図示せず）は合成樹脂製基
板１１のスルーホール１１Ｃを介して取付体１２の接地
位置に接続される。そして、このように誘電体基板１０
が取付けられた合成樹脂製基板１１は取付体１２に収容
され、螺子１４を用いて該取付体１２に固定される。In the above configuration, the dielectric substrate 10 is the synthetic resin substrate 1
A ground conductor (not shown) is accommodated in the recess 11a of the first conductor 1, facing each other, and is bonded to the first recess 11a using an adhesive, for example. Here, the circuit pattern 10a of the dielectric substrate 10 is located on the plane between the connection pattern 11b and the connection pattern 11b of the synthetic resin substrate 11, and the circuit pattern 10a is located on the connection pattern llb.
is connected to via a connecting member 13 such as copper foil. On this occasion,
A ground conductor (not shown) of the dielectric substrate 10 is connected to a ground position of the mounting body 12 via a through hole 11C of the synthetic resin substrate 11. Then, in this way, the dielectric substrate 10
The synthetic resin substrate 11 to which is attached is housed in a mounting body 12 and fixed to the mounting body 12 using screws 14.
このように、上記高周波回路基板装置は合成樹脂製基板
１１に凹部１１ａを設け、この凹部１１ａにマイクロ波
集積回路が形成された誘電体基板１０を収容して固着す
るように構成した。In this way, the high frequency circuit board device is configured such that the synthetic resin substrate 11 is provided with a recess 11a, and the dielectric substrate 10 on which a microwave integrated circuit is formed is accommodated and fixed in the recess 11a.
これによれば、誘電体基板１０は合成樹脂製基板１１の
凹部１１ａに収容された状態で、その回路パータン１０
ａが合成樹脂製基板１１の接続パターンｌｌｂと路間−
面上に位置されることにより、その厚さ寸法が合成樹脂
製基板１１の厚さ寸法と略同様までの薄形化が容易に実
現される。また、これによれば、誘電体基板１０の回路
パターン１０ａと合成樹脂製基板１１の接続パターン１
１ｂが路間−面上に位置されることにより、相互の接続
箇所におけるインピーダンス整合が容易に採り得る。According to this, the circuit pattern 10 of the dielectric substrate 10 is housed in the recess 11a of the synthetic resin substrate 11.
a is between the connection pattern llb of the synthetic resin board 11 and the path -
By being located on the plane, the thickness can be easily reduced to be approximately the same as the thickness of the synthetic resin substrate 11. Moreover, according to this, the circuit pattern 10a of the dielectric substrate 10 and the connection pattern 1 of the synthetic resin substrate 11
By locating 1b on the path-plane, impedance matching at mutual connection points can be easily achieved.
さらに、上記高周波回路基板装置においては、合成樹脂
製基板１１の凹部１１ａに誘電体基板１０の接地導体（
図示せず）と取付体１２を電気的に接続するスルーホー
ル１１Ｃを形成することにより、該凹部１１ａの厚さ寸
法に対応したインピーダンスの不整合が生じるだけとな
り、そのスルーホール１１Ｃによるインピーダンスの不
整合の削減が図れるため、可及的にマイクロ波集積回路
における伝送特性の劣化が効果的に防止される。Furthermore, in the above-mentioned high frequency circuit board device, the ground conductor of the dielectric substrate 10 (
By forming a through hole 11C that electrically connects the mounting body 12 (not shown), only an impedance mismatch corresponding to the thickness dimension of the recess 11a occurs, and an impedance mismatch due to the through hole 11C occurs. Since matching can be reduced, deterioration of transmission characteristics in the microwave integrated circuit can be effectively prevented as much as possible.
なお、上記実施例では、合成樹脂製基板１１に接続パタ
ーンｌｌｂのみを形成した場合で説明したが、この発明
は、これに限ることなく、例えば第３図に示すように合
成樹脂基板１１にノくイアス回路等の低周波回路１１ｄ
を形成することも可能である。この場合、取付体１２に
は低周波回路１２Ｈに対応して四部１２ｂが設けられ、
この凹部１２ａは低周波回路１２Ｂの構成部品等の逃げ
ようとして供される。Although the above embodiment has been described with reference to the case where only the connection pattern llb is formed on the synthetic resin substrate 11, the present invention is not limited to this, and for example, as shown in FIG. Low frequency circuit 11d such as a bias circuit
It is also possible to form In this case, the mounting body 12 is provided with four parts 12b corresponding to the low frequency circuit 12H,
This recess 12a is provided for the purpose of allowing components of the low frequency circuit 12B to escape.
また、上記実施例では、誘電体基板１０を１枚だけ合成
樹脂製基板１１に埋設する如く固着するように構成した
場合で説明したが、この発明は、これに限ることなく、
第４図に示すように複数枚、例えば２枚の誘電体基板１
０を合成樹脂製基板１１の一方面に埋設したり、あるい
は図示しないが複数枚の誘電体基板１０を合成樹脂製基
板１１の両面に埋設するように構成することも可能であ
る。Further, in the above embodiment, only one dielectric substrate 10 is embedded and fixed to the synthetic resin substrate 11, but the present invention is not limited to this.
As shown in FIG. 4, a plurality of dielectric substrates 1, for example two dielectric substrates 1
0 may be embedded in one side of the synthetic resin substrate 11, or a plurality of dielectric substrates 10 may be embedded in both sides of the synthetic resin substrate 11 (not shown).
さらに、上記実施例では、合成樹脂製基板１１の凹部１
１ａにスルーホール１１Ｃを設けた場合で説明したが、
これに限ることなく、スルーホール１１ｃを設ける必要
のない高周波信号を使用するマイクロ波集積回路に適用
することも可能である。この場合には、無論のことスル
ーホール１１Ｃを凹部１１ａに形成しなくて良いことと
なる。Furthermore, in the above embodiment, the recess 1 of the synthetic resin substrate 11
Although the explanation is based on the case where the through hole 11C is provided in 1a,
The present invention is not limited to this, and can also be applied to a microwave integrated circuit using a high frequency signal that does not require the provision of the through hole 11c. In this case, it goes without saying that the through hole 11C does not need to be formed in the recess 11a.
よって、この発明は上記実施例に限ることなく、その他
、この発明の要旨を逸脱しない範囲で種々の変形を実施
し得ることは勿論のことである。Therefore, it goes without saying that the present invention is not limited to the above embodiments, and that various modifications can be made without departing from the spirit of the invention.
［発明の効果］
以上詳述したように、この発明によれば、薄形化の促進
を図り得、且つ、誘電体基板と合成樹脂製基板の間のイ
ンピーダンス整合を容易に採り得るようにした高周波回
路基板装置を提供することができる。[Effects of the Invention] As detailed above, according to the present invention, it is possible to promote thinning, and it is possible to easily achieve impedance matching between the dielectric substrate and the synthetic resin substrate. A high frequency circuit board device can be provided.
第１図はこの発明の一実施例に係る高周波回路基板装置
を示す斜視図、断面図、第２図は第１図を取付体に取付
けた状態を示す断面図、第３図及び第４図はこの発明の
他の実施例を示す断面図、第５図及び第６図は従来の高
周波回路基板装置を示す斜視図、断面図である。
１０・・・誘電体基板、１０ａ・・・回路パターン、１
１・・・合成樹脂製基板、ｌｌａ・・・凹部、１１ｂ・
・・接続パターン、ｌｌｃ・・・スルーホール、１１ｄ
・・・低周波回路、１２・・・取付体、１２ａ・・・凹
部、１３・・・接続部材、１４・・・螺子。
出願人代理人 弁理士 鈴江武彦
１０誘電体蟇板
１０ａ回路パターン
１１ 合成樹脂製基板
１１ｂ接続バタ
１ｃ
スルーホール
接続部材
１１ａ凹部
（ａ）
（ｂ）
０ａ
１ａ
１ｃ
第
図1 is a perspective view and a cross-sectional view showing a high-frequency circuit board device according to an embodiment of the present invention; FIG. 2 is a cross-sectional view showing the device shown in FIG. 1 attached to a mounting body; FIGS. 3 and 4; FIG. 5 is a sectional view showing another embodiment of the present invention, and FIGS. 5 and 6 are a perspective view and a sectional view showing a conventional high frequency circuit board device. 10... Dielectric substrate, 10a... Circuit pattern, 1
1...Synthetic resin substrate, lla...recess, 11b.
...Connection pattern, llc...Through hole, 11d
...Low frequency circuit, 12... Mounting body, 12a... Recess, 13... Connection member, 14... Screw. Applicant's agent Patent attorney Takehiko Suzue 10 Dielectric toe plate 10a Circuit pattern 11 Synthetic resin board 11b Connection butter 1c Through-hole connection member 11a recess (a) (b) 0a 1a 1c Fig.
Claims (1)
基板の厚さ寸法に対応して設けられた取付体に取付け支
持される合成樹脂製基板とを具備したことを特徴とする
高周波回路基板装置。[Claims] A dielectric substrate on which a microwave integrated circuit is formed, and a mounting body in which a recess in which the dielectric substrate is accommodated and fixed is provided corresponding to the thickness dimension of the dielectric substrate. 1. A high-frequency circuit board device comprising: a synthetic resin board mounted and supported on the board.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2198591A JP2944155B2 (en) | 1990-07-26 | 1990-07-26 | High frequency circuit board device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2198591A JP2944155B2 (en) | 1990-07-26 | 1990-07-26 | High frequency circuit board device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0483402A true JPH0483402A (en) | 1992-03-17 |
| JP2944155B2 JP2944155B2 (en) | 1999-08-30 |
Family
ID=16393738
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2198591A Expired - Lifetime JP2944155B2 (en) | 1990-07-26 | 1990-07-26 | High frequency circuit board device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2944155B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1381258A1 (en) * | 2001-03-29 | 2004-01-14 | TDK Corporation | High-frequency module |
-
1990
- 1990-07-26 JP JP2198591A patent/JP2944155B2/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1381258A1 (en) * | 2001-03-29 | 2004-01-14 | TDK Corporation | High-frequency module |
| EP1381258A4 (en) * | 2001-03-29 | 2007-11-21 | Tdk Corp | High-frequency module |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2944155B2 (en) | 1999-08-30 |
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