JPH027201B2 - - Google Patents
Info
- Publication number
- JPH027201B2 JPH027201B2 JP58133723A JP13372383A JPH027201B2 JP H027201 B2 JPH027201 B2 JP H027201B2 JP 58133723 A JP58133723 A JP 58133723A JP 13372383 A JP13372383 A JP 13372383A JP H027201 B2 JPH027201 B2 JP H027201B2
- Authority
- JP
- Japan
- Prior art keywords
- carrier
- microwave
- millimeter wave
- wave integrated
- stud
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000758 substrate Substances 0.000 claims description 16
- 229910052751 metal Inorganic materials 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 12
- 239000004020 conductor Substances 0.000 description 10
- 230000005540 biological transmission Effects 0.000 description 8
- 239000000969 carrier Substances 0.000 description 5
- 102000008482 12E7 Antigen Human genes 0.000 description 2
- 108010020567 12E7 Antigen Proteins 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910001128 Sn alloy Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000012876 carrier material Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- JVPLOXQKFGYFMN-UHFFFAOYSA-N gold tin Chemical compound [Sn].[Au] JVPLOXQKFGYFMN-UHFFFAOYSA-N 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/16—Auxiliary devices for mode selection, e.g. mode suppression or mode promotion; for mode conversion
Landscapes
- Mounting Of Printed Circuit Boards And The Like (AREA)
- Waveguide Connection Structure (AREA)
- Waveguides (AREA)
Description
【発明の詳細な説明】
(a) 発明の技術分野
本発明はマイクロ波・ミリ波集積回路構造にか
かわり特にキヤリア構造に関する。DETAILED DESCRIPTION OF THE INVENTION (a) Technical Field of the Invention The present invention relates to microwave/millimeter wave integrated circuit structures, and particularly to carrier structures.
(b) 技術の背景
２つ以上のマイクロ波・ミリ波集積回路（以下
本明細書ではMICと略称する）を装置に実装す
るには、それぞれのMICは誘電体基板の下面に
形成された接地導体をキヤリアを介して箱形の装
置筐体の底板に電気的に接続し、機械的には固着
するとともに、それぞれの誘電体基板の上面に形
成されたマイクロストリツプパターンは接続リボ
ンで接続するのが一般的である。(b) Background of the Technology In order to mount two or more microwave/millimeter wave integrated circuits (hereinafter abbreviated as MICs in this specification) in a device, each MIC must be grounded on the bottom surface of a dielectric substrate. The conductor is electrically connected to the bottom plate of the box-shaped device casing via a carrier and mechanically fixed, and the microstrip pattern formed on the top surface of each dielectric substrate is connected with a connecting ribbon. It is common to do so.
(c) 従来技術と問題点
第１図はMICが実装された従来の装置の一例
であつてイは斜視図、ロはイの点線Ｍ部分の断面
図、ハはイの正面断面図である。(c) Prior art and problems Figure 1 shows an example of a conventional device in which a MIC is mounted, where A is a perspective view, B is a sectional view taken along the dotted line M in A, and C is a front sectional view of A. .
同図において１は例えばアルミニユームよりな
る上部が開口した箱形の装置筐体である。２ａ，
２ｂはそれぞれMICであつて誘電体基板４ａ，
４ｂの上面に所望の集積回路が構成され、下面の
全面には金属膜よりなる接地導体６ａ，６ｂがそ
れぞれ形成されている。それぞれの誘電体基板４
ａ，４ｂの対向する端面側の上面には、MIC２
ａとMIC２ｂとの入出接続路となるマイクロス
トリツプパターン５ａ，５ｂがそれぞれ形成され
ている。 In the figure, reference numeral 1 denotes a box-shaped device housing made of, for example, aluminum and having an open top. 2a,
2b are MICs, and dielectric substrates 4a,
A desired integrated circuit is constructed on the upper surface of 4b, and ground conductors 6a and 6b made of metal films are respectively formed on the entire lower surface. Each dielectric substrate 4
On the upper surface of the opposing end surfaces of a and 4b, there is a MIC2
Microstrip patterns 5a and 5b are formed, respectively, to serve as input/output connection paths between the MIC 2b and the MIC 2b.
３ａ，３ｂは幅が誘電体基板４ａ，４ｂの幅よ
りも所望に大きい角板状の金属板例えば無酸素銅
板よりなるキヤリアである。キヤリア３ａの上面
には、誘電体基板４ａの端面とキヤリア３ａの端
面とが一致するようにMIC２ａが載置され、
MIC２ａの接地導体６ａが例えば金−錫合金よ
りなる硬鑞によつて接着固着されている。また同
様にキヤリア３ｂにはMIC２ｂが接着固着され
ている。 3a and 3b are carriers made of rectangular metal plates, such as oxygen-free copper plates, whose width is desirably larger than the width of the dielectric substrates 4a and 4b. The MIC 2a is placed on the upper surface of the carrier 3a so that the end surface of the dielectric substrate 4a and the end surface of the carrier 3a match,
The ground conductor 6a of the MIC 2a is adhesively fixed with hard solder made of, for example, a gold-tin alloy. Similarly, the MIC 2b is adhesively fixed to the carrier 3b.
キヤリア３ａとキヤリア３ｂとは、装置筐体１
の底板１ａの内面にそれぞれの端面が対向して近
接する如くに載置されている。そしてキヤリア３
ａ，３ｂはそれぞれ誘電体基板４ａ，４ｂの両側
に穿設された挿通孔を貫通する小ねじ７によつて
装置筐体１に固着されている。またマイクロスト
リツプパターン５ａとマイクロストリツプパター
ン５ｂとは例えば金箔よりなる接続リボン８によ
つて接続されている。 The carrier 3a and the carrier 3b are connected to the device housing 1.
They are placed on the inner surface of the bottom plate 1a so that their respective end surfaces face each other and are close to each other. and carrier 3
a and 3b are fixed to the device housing 1 by machine screws 7 passing through insertion holes drilled on both sides of the dielectric substrates 4a and 4b, respectively. Further, the microstrip pattern 5a and the microstrip pattern 5b are connected by a connecting ribbon 8 made of, for example, gold foil.
このようにMIC２ａ、MIC２ｂを装置筐体１
内に実装した後に、装置筐体１の開口面にカバー
１Ａを装着、密閉してシールドしている。 In this way, connect MIC2a and MIC2b to device housing 1.
After the device is mounted inside, a cover 1A is attached to the opening surface of the device housing 1, and the device is sealed and shielded.
しかし上述のような従来のマイクロ波・ミリ波
集積回路にはMIC２ａ、MIC２ｂ間入出接続路
の伝送線路の不整合と、装置筐体１の空間に発生
する不要導波管モードの伝達にによるMIC間の
干渉という問題点がある。 However, in the conventional microwave/millimeter wave integrated circuit as described above, the MIC is affected by mismatching of the transmission line of the input/output connection path between MIC2a and MIC2b and the transmission of unnecessary waveguide modes generated in the space of the device housing 1. There is a problem of interference between the two.
MIC２ａ、MIC２ｂ間入出接続路の伝送線路
の不整合の要因は次の２点である。その１つは
MIC２ａ、MIC2間のキヤリア間隙９が、キヤリ
ア、MICなどの製造上、組立上誤差により一定
でなく、接地導体と導体パターンとにより誘電体
に構成されるマイクロストリツプ伝送路を同一の
特性インピーダンスを確保することが困難である
こと、特に接地導体のキヤリア厚さ方向での大き
な不連続が伝送線路の不整合の大きな要因となる
ことである。他の１つは半導体能動素子を搭載す
るために熱伝導率の優れた板厚の薄いキヤリア材
料とすると、キヤリアと誘電体基板を鑞材で接着
する場合に両者の熱膨脹の差によりキヤリアがロ
の点線９ａに示すように弓形に反り、筐体１の底
板１ａの内面との間に間隙が生じキヤリア間隙９
が実質的に大きくなることである。 The following two factors are responsible for mismatching of the transmission line of the input/output connection path between MIC2a and MIC2b. One of them is
The carrier gap 9 between MIC2a and MIC2 is not constant due to manufacturing and assembly errors of the carrier and MIC, and the microstrip transmission line composed of a dielectric material with a ground conductor and a conductor pattern has the same characteristic impedance. In particular, large discontinuities in the carrier thickness direction of the ground conductor are a major cause of transmission line mismatch. Another problem is that if a thin carrier material with excellent thermal conductivity is used to mount semiconductor active elements, when the carrier and dielectric substrate are bonded together with a solder, the difference in thermal expansion between the two will cause the carrier to become loose. As shown by the dotted line 9a, the carrier is warped in an arched shape, and a gap is created between the inner surface of the bottom plate 1a of the housing 1 and the carrier gap 9.
becomes substantially larger.
(d) 発明の目的
本発明の目的は上記従来の問題点が除去された
マイクロ波・ミリ波集積回路構造を提供すること
にある。(d) Object of the Invention An object of the present invention is to provide a microwave/millimeter wave integrated circuit structure in which the above-mentioned conventional problems are eliminated.
(e) 発明の構成
この目的を達成するために本発明は、誘電体基
板の一方の面にマイクロストリツプパターンを設
け、他方の面をアース面とし、該アース面を金属
キヤリアに密着してなるマイクロ波・ミリ波集積
回路において、該金属キヤリアの平面形状および
大きさを該誘電体基板の平面形状および大きさと
ほぼ等しくし、該金属キヤリア下面の他のマイク
ロ波・ミリ波集積回路と対向する端面近傍のキヤ
リアの中央近傍に該キヤリアを固定するスタツト
ねじあるいは軸心にねじ穴を形成されたスタツト
が突出て設けたものである。(e) Structure of the Invention In order to achieve this object, the present invention provides a microstrip pattern on one side of a dielectric substrate, uses the other side as a ground plane, and connects the ground plane to a metal carrier. In a microwave/millimeter wave integrated circuit consisting of a metal carrier, the planar shape and size of the metal carrier are made approximately equal to the planar shape and size of the dielectric substrate, and the metal carrier is configured to A stud screw or a stud with a threaded hole formed in the axis of the carrier is protrudingly provided near the center of the carrier near the opposing end faces for fixing the carrier.
(f) 発明の実施例
以下図示実施例を参照して本発明について詳細
に説明する。なお全図を通じて同一符号は同一対
象物を示す。(f) Embodiments of the Invention The present invention will be described in detail below with reference to illustrated embodiments. Note that the same reference numerals indicate the same objects throughout the figures.
第２図は本発明の一実施例のイはキヤリアの斜
視図、ロは入出接続路方向の断面図であり、ハは
正面断面図である。 In FIG. 2, A is a perspective view of a carrier, B is a sectional view in the direction of the input/output connection path, and C is a front sectional view of one embodiment of the present invention.
同図においてMIC２ａ、MIC２ｂはそれぞれ
誘電体基板４ａ，４ｂの上面に所望の集積回路が
構成され、下面の全面には金属膜よりなる接地導
体６ａ，６ｂがそれぞれ形成されている。それぞ
れの誘電体基板４ａ，４ｂの対向する端面側の上
面には、MIC２ａとMIC２ｂとの入出接続路と
なるマイクロストリツプパターン５ａ，５ｂがそ
れぞれ形成されている。 In the figure, MIC2a and MIC2b have desired integrated circuits formed on the upper surfaces of dielectric substrates 4a and 4b, respectively, and ground conductors 6a and 6b made of metal films are formed on the entire lower surface, respectively. Microstrip patterns 5a and 5b, which serve as input and output connection paths between the MIC 2a and the MIC 2b, are formed on the upper surfaces of the opposing end surfaces of the dielectric substrates 4a and 4b, respectively.
キヤリア１３ａ、キヤリア１３ｂはそれぞれ厚
さが等しく従来のものより極めて薄い金属板より
なり、それぞれの平面視形状はそれぞれの上面に
密着して載置される誘電体基板４ａ、誘電体基板
４ｂの形状にほぼ等しい。それぞれのキヤリア１
３ａ、キヤリア１３ｂにはマイクロストリツプパ
ターン５ａ、マイクロストリツプパターン５ｂの
直下の下面で、互いに対向して装置筐体１１の底
板１１ａに固着される端面近傍に、スタツトねじ
１４ａ、スタツトねじ１４ｂがそれぞれ突出して
設けられている。 The carriers 13a and 13b are made of metal plates having the same thickness and much thinner than conventional ones, and their respective planar shapes are the same as the shapes of the dielectric substrates 4a and 4b that are placed in close contact with their upper surfaces. approximately equal to. Each carrier 1
3a, the carrier 13b has a stud screw 14a and a stud screw located on the lower surface directly below the microstrip pattern 5a and the microstrip pattern 5b, facing each other and near the end surfaces fixed to the bottom plate 11a of the device housing 11. 14b are provided to protrude from each other.
空間１７の幅がキヤリア１３ａ（キヤリア１３
ｂとも同じ）の幅よりもわずかに大きいように構
成された装置筐体１１の底板１１ａには、キヤリ
ア間隙１６が狭くキヤリア１３ａとキヤリア１３
ｂとが実装されるように、近接してスタツトねじ
１４ａ、スタツトねじ１４ｂがそれぞれ挿入され
る一対の座ぐり孔が穿設されている。 The width of the space 17 is the carrier 13a (carrier 13
The bottom plate 11a of the device housing 11 is configured to have a width slightly larger than the width of the carrier 13a and the carrier 13a.
A pair of counterbore holes into which the stud screws 14a and 14b are respectively inserted are bored in close proximity to each other so that the stud screws 14a and 14b can be mounted therein.
MIC２ａ、MIC２ｂがそれぞれに搭載された
キヤリア１３ａ、キヤリア１３ｂを底板１１ａの
内面に載置し、スタツトねじ１４ａおよびスタツ
トねじｂを対応するこの座ぐり孔に挿入し、底板
１１ａの外側よりナツト１５を螺着して、装置筐
体１１の底板１１ａにMIC２ａおよびMIC２ｂ
をキヤリアの曲がりを矯正し、密着して実装す
る。そしてその後接続リボン８にてマイクロスト
リツプパターン５ａとマイクロストリツプパター
ン５ｂとは接続され、装置筐体１１の開口面はカ
バー１２が装着されシールドされている。 Place the carriers 13a and 13b on which the MIC2a and MIC2b are mounted, respectively, on the inner surface of the bottom plate 11a, insert the stud screws 14a and stud screws b into the corresponding counterbore holes, and insert the nuts 15 from the outside of the bottom plate 11a. MIC2a and MIC2b are screwed onto the bottom plate 11a of the device housing 11.
Correct the bend in the carrier and mount it closely. Thereafter, the microstrip pattern 5a and the microstrip pattern 5b are connected by the connection ribbon 8, and a cover 12 is attached to the opening surface of the device housing 11 to shield it.
このようにキヤリアの幅が小さく、したがつて
空間１７を小さくすることができ装置筐体の共振
周波数が高くなり、MIC２ａとMIC２ｂとの間
に不要導波管モードが伝達する恐れがない。 In this way, the width of the carrier is small, so the space 17 can be made small, the resonance frequency of the device housing becomes high, and there is no fear that unnecessary waveguide modes will be transmitted between the MIC 2a and the MIC 2b.
またキヤリア１３ａとキヤリア１３ｂとは厚さ
が殆ど等しくかつ薄いので、スタツトねじ１４ａ
とスタツトねじ１４ｂとによりそれぞれのキヤリ
ア１３ａとキヤリア１３ｂの下面が、底板１１ａ
の上面に近接しており、接地導体の不連続が小さ
くなるよう構成されている。よつてMIC２ａ、
MIC２ｂ間の入出接続路の伝送線路の整合が容
易となる。 Further, since the carriers 13a and 13b have almost the same thickness and are thin, the stud screw 14a
and the stud screw 14b, the lower surfaces of the carriers 13a and 13b are connected to the bottom plate 11a.
The ground conductor is located close to the top surface of the ground conductor, and is configured to minimize discontinuities in the ground conductor. MIC2a,
Matching of the transmission line of the input/output connection path between the MICs 2b becomes easy.
なお図示例はキヤリアにスタツトねじを設けた
ものであるが、スタツトねじでなく軸心にねじ孔
が形成されたスタツトを突出して設けても良い。 In the illustrated example, a stud screw is provided on the carrier, but instead of a stud screw, a stud with a screw hole formed in the shaft center may be provided protrudingly.
(g) 発明の効果
以上説明したように本発明は、装置筐体に実装
された２つ以上のマイクロ波・ミリ波集積回路間
の入出接続路の伝送線路の整合が容易で、かつ装
置筐体の空間に発生する不要導波管モードの伝達
にによるマイクロ波・ミリ波集積回路間の干渉も
少ないという実用上で優れた効果のあるマイクロ
波・ミリ波集積回路構造である。(g) Effects of the Invention As explained above, the present invention allows easy matching of transmission lines of input/output connections between two or more microwave/millimeter wave integrated circuits mounted in a device casing, This is a microwave/millimeter wave integrated circuit structure that has excellent practical effects in that there is little interference between microwave and millimeter wave integrated circuits due to the transmission of unnecessary waveguide modes generated in the body space.
第１図はマイクロ波・ミリ波集積回路が実装さ
れた従来の装置の一例であつてイは斜視図、ロは
イの点線Ｍ部分の断面図、ハはイの正面断面図で
あり、第２図は本発明の一実施例のイはキヤリア
の斜視図、ロは入出接続路方向の断面図、ハは正
面断面図である。
図中１，１１は装置筐体、２Ａ，２ｂはマイク
ロ波・ミリ波集積回路、３ａ，３ｂ，１３ａ，１
３ｂはキヤリア、４ａ，４ｂは誘電体基板、５ａ
と５ｂはマイクロストリツプパターン、８は接続
リボン、９，１６はキヤリア間隙、１０，１７は
空間、１４ａ，１４ｂはスタツトねじをそれぞれ
示す。
Fig. 1 shows an example of a conventional device in which a microwave/millimeter wave integrated circuit is mounted. 2 is a perspective view of a carrier according to an embodiment of the present invention, b is a sectional view in the direction of the input/output connection path, and c is a front sectional view. In the figure, 1 and 11 are device casings, 2A and 2b are microwave/millimeter wave integrated circuits, and 3a, 3b, 13a, 1
3b is a carrier, 4a, 4b are dielectric substrates, 5a
and 5b are microstrip patterns, 8 is a connecting ribbon, 9 and 16 are carrier gaps, 10 and 17 are spaces, and 14a and 14b are stud screws, respectively.
Claims (1)
パターンを設け、他方の面をアース面とし、該ア
ース面を金属キヤリアに密着してなるマイクロ
波・ミリ波集積回路において、 該金属キヤリアの平面形状および大きさを該誘
電体基板の平面形状および大きさとほぼ等しく
し、 該金属キヤリア下面の他のマイクロ波・ミリ波
集積回路と対向する端面近傍のキヤリアの中央近
傍に該キヤリアを固定するスタツトねじあるいは
軸心にねじ穴を形成されたスタツトが突出して設
けられてなることを特徴とするマイクロ波・ミリ
波集積回路構造。[Claims] 1. In a microwave/millimeter wave integrated circuit in which a microstrip pattern is provided on one side of a dielectric substrate, the other side is used as a ground plane, and the ground plane is in close contact with a metal carrier. , the planar shape and size of the metal carrier are made almost equal to the planar shape and size of the dielectric substrate, and the metal carrier is placed near the center of the carrier near the end face facing other microwave/millimeter wave integrated circuits on the lower surface of the metal carrier. A microwave/millimeter wave integrated circuit structure comprising a protruding stud screw for fixing the carrier or a stud having a screw hole formed in the shaft center.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58133723A JPS6025301A (en) | 1983-07-22 | 1983-07-22 | Structure of integrated circuit for microwave and millimeter wave |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58133723A JPS6025301A (en) | 1983-07-22 | 1983-07-22 | Structure of integrated circuit for microwave and millimeter wave |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6025301A JPS6025301A (en) | 1985-02-08 |
| JPH027201B2 true JPH027201B2 (en) | 1990-02-16 |
Family
ID=15111400
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58133723A Granted JPS6025301A (en) | 1983-07-22 | 1983-07-22 | Structure of integrated circuit for microwave and millimeter wave |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6025301A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04104980U (en) * | 1991-02-21 | 1992-09-09 | 株式会社イナツクス | washbasin or sink |
| JPH0715602U (en) * | 1993-08-30 | 1995-03-17 | 桂子 増尾 | Trash can |
| JP2004336278A (en) * | 2003-05-06 | 2004-11-25 | Mitsubishi Electric Corp | Microwave apparatus |
-
1983
- 1983-07-22 JP JP58133723A patent/JPS6025301A/en active Granted
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04104980U (en) * | 1991-02-21 | 1992-09-09 | 株式会社イナツクス | washbasin or sink |
| JPH0715602U (en) * | 1993-08-30 | 1995-03-17 | 桂子 増尾 | Trash can |
| JP2004336278A (en) * | 2003-05-06 | 2004-11-25 | Mitsubishi Electric Corp | Microwave apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6025301A (en) | 1985-02-08 |
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