JPH0482197B2 - - Google Patents
Info
- Publication number
- JPH0482197B2 JPH0482197B2 JP9408287A JP9408287A JPH0482197B2 JP H0482197 B2 JPH0482197 B2 JP H0482197B2 JP 9408287 A JP9408287 A JP 9408287A JP 9408287 A JP9408287 A JP 9408287A JP H0482197 B2 JPH0482197 B2 JP H0482197B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor laser
- layer
- array device
- waveguide
- refractive index
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 claims description 63
- 239000000463 material Substances 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 13
- 238000003776 cleavage reaction Methods 0.000 claims description 12
- 230000007017 scission Effects 0.000 claims description 12
- 230000010355 oscillation Effects 0.000 claims description 10
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 18
- 238000000034 method Methods 0.000 description 16
- 239000013078 crystal Substances 0.000 description 14
- 238000005253 cladding Methods 0.000 description 11
- 238000005530 etching Methods 0.000 description 10
- 230000000903 blocking effect Effects 0.000 description 8
- 238000000149 argon plasma sintering Methods 0.000 description 5
- 238000000206 photolithography Methods 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000002109 crystal growth method Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4031—Edge-emitting structures
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9408287A JPS63258091A (ja) | 1987-04-15 | 1987-04-15 | 半導体レ−ザアレイ装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9408287A JPS63258091A (ja) | 1987-04-15 | 1987-04-15 | 半導体レ−ザアレイ装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63258091A JPS63258091A (ja) | 1988-10-25 |
| JPH0482197B2 true JPH0482197B2 (enrdf_load_stackoverflow) | 1992-12-25 |
Family
ID=14100555
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9408287A Granted JPS63258091A (ja) | 1987-04-15 | 1987-04-15 | 半導体レ−ザアレイ装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63258091A (enrdf_load_stackoverflow) |
-
1987
- 1987-04-15 JP JP9408287A patent/JPS63258091A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63258091A (ja) | 1988-10-25 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |