JPS63258091A - 半導体レ−ザアレイ装置 - Google Patents

半導体レ−ザアレイ装置

Info

Publication number
JPS63258091A
JPS63258091A JP9408287A JP9408287A JPS63258091A JP S63258091 A JPS63258091 A JP S63258091A JP 9408287 A JP9408287 A JP 9408287A JP 9408287 A JP9408287 A JP 9408287A JP S63258091 A JPS63258091 A JP S63258091A
Authority
JP
Japan
Prior art keywords
layer
wave guide
light
semiconductor laser
length
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9408287A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0482197B2 (enrdf_load_stackoverflow
Inventor
Akihiro Matsumoto
晃広 松本
Mototaka Tanetani
元隆 種谷
Kaneki Matsui
完益 松井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP9408287A priority Critical patent/JPS63258091A/ja
Publication of JPS63258091A publication Critical patent/JPS63258091A/ja
Publication of JPH0482197B2 publication Critical patent/JPH0482197B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP9408287A 1987-04-15 1987-04-15 半導体レ−ザアレイ装置 Granted JPS63258091A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9408287A JPS63258091A (ja) 1987-04-15 1987-04-15 半導体レ−ザアレイ装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9408287A JPS63258091A (ja) 1987-04-15 1987-04-15 半導体レ−ザアレイ装置

Publications (2)

Publication Number Publication Date
JPS63258091A true JPS63258091A (ja) 1988-10-25
JPH0482197B2 JPH0482197B2 (enrdf_load_stackoverflow) 1992-12-25

Family

ID=14100555

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9408287A Granted JPS63258091A (ja) 1987-04-15 1987-04-15 半導体レ−ザアレイ装置

Country Status (1)

Country Link
JP (1) JPS63258091A (enrdf_load_stackoverflow)

Also Published As

Publication number Publication date
JPH0482197B2 (enrdf_load_stackoverflow) 1992-12-25

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Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees