JPH0482056B2 - - Google Patents

Info

Publication number
JPH0482056B2
JPH0482056B2 JP61139375A JP13937586A JPH0482056B2 JP H0482056 B2 JPH0482056 B2 JP H0482056B2 JP 61139375 A JP61139375 A JP 61139375A JP 13937586 A JP13937586 A JP 13937586A JP H0482056 B2 JPH0482056 B2 JP H0482056B2
Authority
JP
Japan
Prior art keywords
bonding
stage
semiconductor pellet
film carrier
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP61139375A
Other languages
Japanese (ja)
Other versions
JPS62296433A (en
Inventor
Hisao Ishida
Akihiro Nishimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shinkawa Ltd
Original Assignee
Shinkawa Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shinkawa Ltd filed Critical Shinkawa Ltd
Priority to JP61139375A priority Critical patent/JPS62296433A/en
Publication of JPS62296433A publication Critical patent/JPS62296433A/en
Publication of JPH0482056B2 publication Critical patent/JPH0482056B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/79Apparatus for Tape Automated Bonding [TAB]

Description

【発明の詳細な説明】 [産業上の利用分野] 本発明は半導体ペレツトの電極とフイルムキヤ
リアのインナーリードとを一括して接合する内部
リード接合方法に関する。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an internal lead bonding method for collectively bonding electrodes of a semiconductor pellet and inner leads of a film carrier.

[従来の技術] 電極の接合面の材質は、一般Au,Al等が用い
られている。電極接合面がAuの場合には、イン
ナーリードの接合面の材質として、一般にAu,
Sn,半田,Cu等が用いられ、電極接合面がAlの
場合には、インナーリードの接合面の材質として
Auが用いられている。
[Prior Art] As the material of the bonding surface of the electrode, Au, Al, etc. are generally used. When the electrode bonding surface is made of Au, the material of the inner lead bonding surface is generally Au,
If Sn, solder, Cu, etc. are used and the electrode bonding surface is Al, the material for the inner lead bonding surface is
Au is used.

これらの接合に用いられる接合ツールは、ダイ
ヤモンド又は耐熱性金属等である。また接合時に
加熱する接合ツールの表面温度は一般に約500℃
以上と極めて高くしている。
The bonding tools used for these bonds are diamond, heat-resistant metal, or the like. Additionally, the surface temperature of the welding tool that is heated during welding is generally approximately 500℃.
The above is extremely high.

[発明が解決しようとする問題点] 上記従来例では、高温で接合しているので、半
導体ペレツトに悪影響を与えると共に、接合ツー
ルを保持するホルダーの熱膨張や電力供給線の巨
大化等の装置構成上に大きな問題点があつた。
[Problems to be Solved by the Invention] In the above conventional example, bonding is carried out at high temperatures, which not only adversely affects the semiconductor pellet, but also causes problems such as thermal expansion of the holder that holds the bonding tool and enlargement of the power supply line. There was a big problem with the configuration.

従来、半導体ペレツトの電極とフイルムキヤリ
アのインナーリードとをAu線、Al線等のワイヤ
で接続するワイヤボンダーにおいては、ワイヤを
半導体ペレツトの電極に接合する際、ワイヤが挿
通されているボンデイングツールを超音波によつ
て振動させ、接合を促進させる方法が知られてい
る。
Conventionally, in wire bonders that connect the electrodes of semiconductor pellets and the inner leads of film carriers using wires such as Au wires and Al wires, when bonding the wires to the electrodes of semiconductor pellets, the bonding tool through which the wires are inserted is used. A method of promoting bonding by vibrating with ultrasonic waves is known.

そこで、半導体ペレツトの電極とフイルムキヤ
リアのインナーリードとを一括して接合する、い
わゆるギヤングボンデイングにおいて、前記従来
の超音波ワイヤボンデイングの方法を採り入れ、
接合ツールに超音波振動を与えることが考えられ
る。
Therefore, in so-called gigantic bonding, in which the electrodes of the semiconductor pellet and the inner leads of the film carrier are bonded together, the conventional ultrasonic wire bonding method is adopted.
One possibility is to apply ultrasonic vibration to the welding tool.

しかし、接合ツールに超音波振動を与えても、
接合ツールは単にインナーリード上にこするのみ
であり、インナーリードと半導体ペレツトの電極
との間には何ら作用しないので、接合を促進させ
る効果は得られない。そこで、接合ツールと共に
フイルムキヤリアも振動させる必要があるが、フ
イルムキヤリアを保持するホルダー関係は質量が
非常に大きく、また接合時の荷重もワイヤボンデ
イングの場合の数百倍にも及ぶので、具体化が困
難である。
However, even if we apply ultrasonic vibration to the welding tool,
Since the bonding tool merely rubs on the inner leads and does not act in any way between the inner leads and the electrodes of the semiconductor pellet, no effect of promoting bonding can be obtained. Therefore, it is necessary to vibrate the film carrier together with the bonding tool, but the holder that holds the film carrier has a very large mass, and the load during bonding is several hundred times that of wire bonding, so it is difficult to is difficult.

このような問題点を解決するものとして、例え
ば特開昭59−111340号公報に示すように、ステー
ジに超音波ホーン及び超音波振動子を取付け、超
音波振動子を高周波電源により駆動し、超音波振
動を超音波ホーンを介してステージに伝達し、ス
テージと半導体ペレツトを超音波振動させるもの
が知られている。
To solve these problems, for example, as shown in Japanese Patent Laid-Open No. 59-111340, an ultrasonic horn and an ultrasonic vibrator are attached to the stage, and the ultrasonic vibrator is driven by a high-frequency power source. A known device is one in which sonic vibrations are transmitted to a stage via an ultrasonic horn to cause the stage and semiconductor pellet to vibrate ultrasonically.

ところで、前記公報には図示されていないが、
ステージは、該ステージに位置決め載置された半
導体ペレツトの電極をフイルムキヤリアのインナ
ーリードに位置合せするために、一般にXY方向
に駆動されるXYテーブル上に固定されている。
しかるに、上記従来技術は、ステージに超音波ホ
ーン及び超音波振動子が取付けられているので、
ステージを駆動するXYテーブルの駆動源(X方
向駆動用モータ及びY方向駆動用モータ)は大容
量のものを必要とする。また超音波ホーン、超音
波振動子及び高周波電源を必要とするので、高価
な装置となる。
By the way, although not shown in the above publication,
The stage is generally fixed on an XY table that is driven in the XY directions in order to align the electrodes of the semiconductor pellet placed on the stage with the inner leads of the film carrier.
However, in the above conventional technology, since an ultrasonic horn and an ultrasonic vibrator are attached to the stage,
The drive sources (X-direction drive motor and Y-direction drive motor) for the XY table that drives the stage require large capacity ones. Furthermore, since it requires an ultrasonic horn, an ultrasonic vibrator, and a high-frequency power source, it becomes an expensive device.

本発明の目的は、XYテーブルの駆動源の容量
を増す必要がなく、また装置がコストアツプする
ことがなく、低温及び低荷重で接合が可能で、半
導体ペレツトの信頼性が向上する内部リード接合
方法を提供することにある。
An object of the present invention is to provide an internal lead bonding method that does not require increasing the capacity of the drive source of the XY table, does not increase the cost of the device, allows bonding at low temperatures and low loads, and improves the reliability of semiconductor pellets. Our goal is to provide the following.

[問題点を解決するための手段] 上記従来技術の問題点は、XY方向に駆動され
るXYテーブル上にステージが固定され、このス
テージに位置決め載置された半導体ペレツトの電
極にフイルムキヤリアのインナーリードを接合ツ
ールで押付けて半導体ペレツトの電極とフイルム
キヤリアのインナーリードとを一括して接合する
内部リード接合方法において、前記接合ツールで
前記フイルムキヤリアのインナーリードを前記半
導体ペレツトの電極に押付けた状態で前記XYテ
ーブルを駆動して前記ステージに水平方向の振動
を与えることにより解決される。
[Means for Solving the Problems] The problem with the above conventional technology is that the stage is fixed on an XY table that is driven in the In an internal lead bonding method in which an electrode of a semiconductor pellet and an inner lead of a film carrier are collectively bonded by pressing a lead with a bonding tool, a state in which the bonding tool presses the inner lead of the film carrier against the electrode of the semiconductor pellet. This problem can be solved by driving the XY table and applying horizontal vibration to the stage.

[作用] 半導体ペレツトを振動させることにより超音波
の効果によつて接合が促進されるので、低温及び
低荷重でも接合する。この場合の半導体ペレツト
の振動は、ステージが固定されたXYテーブルを
駆動して行う。即ち、特別に振動を与える手段を
ステージに付加することなく、本来ボンデイング
装置が有するXYテーブルを駆動して行うので、
XYテーブルの駆動源の容量を増す必要がなく、
またボンデイング装置の価格が上昇することもな
い。
[Function] By vibrating the semiconductor pellets, bonding is promoted by the effect of ultrasonic waves, so bonding can be achieved even at low temperatures and low loads. In this case, the semiconductor pellet is vibrated by driving an XY table to which a stage is fixed. In other words, it is performed by driving the XY table originally included in the bonding equipment, without adding any special means for applying vibration to the stage.
There is no need to increase the capacity of the drive source for the XY table,
Moreover, the price of bonding equipment will not increase.

[実施例] 以下、本発明の一実施例を第1図及び第2図に
より説明する。半導体ペレツト1を位置決め固定
するステージ2は、X方向駆動用モータ3及びY
方向駆動用モータ4でXY方向に駆動されるXY
テーブル5上に固定されている。そこで、ステー
ジ2に位置決め固定された半導体ペレツト1は、
XYテーブル5の駆動によつて接合位置に送られ
る。一方、フイルムキヤリア6は図示しない手段
で送られ、これによりフイルムキヤリア6に設け
られたインナーリード7が接合位置に送られる。
[Example] An example of the present invention will be described below with reference to FIGS. 1 and 2. The stage 2 for positioning and fixing the semiconductor pellet 1 is driven by an X-direction drive motor 3 and a Y-direction drive motor 3.
XY driven in the XY direction by the directional drive motor 4
It is fixed on the table 5. Therefore, the semiconductor pellet 1 positioned and fixed on the stage 2 is
The XY table 5 is driven to send it to the joining position. On the other hand, the film carrier 6 is fed by means not shown, and thereby the inner lead 7 provided on the film carrier 6 is fed to the joining position.

次に第2図に示すように、接合ツール8が下降
し、インナーリード7を半導体ペレツト1の電極
1aに押圧する。この状態で、制御装置からの予
め決められた信号によつてモータ3,4を一定量
だけ往復駆動させ、XYテーブル5、即ちステー
ジ2に水平振動を与える。これにより、半導体ペ
レツト1もステージ2と一諸に水平振動し、イン
ナーリード7と電極1aとはこすり合せられ、両
者の接合が促進される。
Next, as shown in FIG. 2, the bonding tool 8 descends and presses the inner lead 7 against the electrode 1a of the semiconductor pellet 1. In this state, the motors 3 and 4 are reciprocated by a certain amount in response to a predetermined signal from the control device, thereby imparting horizontal vibration to the XY table 5, that is, the stage 2. As a result, the semiconductor pellet 1 is also horizontally vibrated together with the stage 2, and the inner lead 7 and the electrode 1a are rubbed against each other, promoting bonding between them.

この場合、モータ3,4によつてX方向、Y方
向のいずれにも振動を与えることができる。また
モータ3,4によつて振動を与えるので、比較的
大きな重量でもモータトルクによつて振動が持続
できる。モータ3,4にパルスモータを用いるこ
とにより、振幅を自由に変えることができる。
In this case, vibration can be applied in both the X direction and the Y direction by the motors 3 and 4. Furthermore, since vibration is applied by the motors 3 and 4, even if the weight is relatively large, the vibration can be sustained by the motor torque. By using pulse motors for the motors 3 and 4, the amplitude can be changed freely.

実験の結果、ステージ2の振動を、振幅が1〜
5μm、振動数が100サイクル〜10キロサイクルで、
約5〜100msec間振動を行つたところ、加熱温度
は200〜400℃、接合ツール8の押圧荷重は10〜80
gでも非常に良好な接合が得られた。
As a result of the experiment, the vibration of stage 2 has an amplitude of 1~
5 μm, vibration frequency is 100 cycles to 10 kilocycles,
When vibration was performed for approximately 5 to 100 msec, the heating temperature was 200 to 400°C, and the pressing load of the welding tool 8 was 10 to 80°C.
Very good bonding was obtained even at

[発明の効果] 以上の説明から明らかなように、本発明によれ
ば、質量が小さな半導体ペレツト側を振動させる
ので、実施が容易であり、また半導体ペレツトに
振動を与えることにより超音波接合の効果が得ら
れ、低温及び低荷重で接合が可能で、半導体ペレ
ツトの信頼性が向上する。また特別に振動を与え
る手段をステージに付加することなく、本来ボン
デイング装置が有するXYテーブルを駆動して行
うので、XYテーブルの駆動源の容量を増す必要
がなく、またボンデイング装置の価格が上昇する
こともない。
[Effects of the Invention] As is clear from the above description, according to the present invention, since the semiconductor pellet side having a small mass is vibrated, it is easy to implement, and ultrasonic bonding can be performed by applying vibration to the semiconductor pellet. This makes it possible to bond at low temperatures and low loads, improving the reliability of semiconductor pellets. In addition, since the XY table originally included in the bonding equipment is driven without adding any special means for applying vibration to the stage, there is no need to increase the capacity of the drive source for the XY table, and the price of the bonding equipment increases. Not at all.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図及び第2図は本発明の方法の一実施例を
示す正面説明図である。 1……半導体ペレツト、1a……電極、2……
ステージ、6……フイルムキヤリア、7……イン
ナーリード、8……接合ツール。
1 and 2 are explanatory front views showing one embodiment of the method of the present invention. 1... Semiconductor pellet, 1a... Electrode, 2...
Stage, 6...Film carrier, 7...Inner lead, 8...Joining tool.

Claims (1)

【特許請求の範囲】[Claims] 1 XY方向に駆動されるXYテーブル上にステ
ージが固定され、このステージに位置決め載置さ
れた半導体ペレツトの電極にフイルムキヤリアの
インナーリードを接合ツールで押付けて半導体ペ
レツトの電極とフイルムキヤリアのインナーリー
ドとを一括して接合する内部リード接合方法にお
いて、前記接合ツールで前記フイルムキヤリアの
インナーリードを前記半導体ペレツトの電極に押
付けた状態で前記XYテーブルを駆動して前記ス
テージに水平方向の振動を与えることを特徴とす
る内部リード接合方法。
1. A stage is fixed on an XY table that is driven in the XY directions, and a bonding tool is used to press the inner lead of the film carrier against the electrode of the semiconductor pellet positioned and placed on this stage to connect the electrode of the semiconductor pellet and the inner lead of the film carrier. In the internal lead bonding method for bonding the semiconductor pellets at once, the XY table is driven with the bonding tool pressing the inner leads of the film carrier against the electrodes of the semiconductor pellet to apply horizontal vibration to the stage. An internal lead joining method characterized by:
JP61139375A 1986-06-17 1986-06-17 Inner lead junctioning method Granted JPS62296433A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61139375A JPS62296433A (en) 1986-06-17 1986-06-17 Inner lead junctioning method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61139375A JPS62296433A (en) 1986-06-17 1986-06-17 Inner lead junctioning method

Publications (2)

Publication Number Publication Date
JPS62296433A JPS62296433A (en) 1987-12-23
JPH0482056B2 true JPH0482056B2 (en) 1992-12-25

Family

ID=15243858

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61139375A Granted JPS62296433A (en) 1986-06-17 1986-06-17 Inner lead junctioning method

Country Status (1)

Country Link
JP (1) JPS62296433A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3704113B2 (en) 2002-09-26 2005-10-05 住友大阪セメント株式会社 Bonding stage and electronic component mounting apparatus

Also Published As

Publication number Publication date
JPS62296433A (en) 1987-12-23

Similar Documents

Publication Publication Date Title
US5494207A (en) Wire bonder transducer arrangement and method
US6685083B2 (en) Ultrasonic vibration mode for wire bonding
JPH02101754A (en) Bonding process and bonding apparatus
JPH0574874A (en) Ultrasonic connection method of metallic fine wiring and device
US5326014A (en) Head of ultrasonic wire bonding apparatus and bonding method
JPH0482056B2 (en)
JPH08153759A (en) Single-point bonder and manufacture of semiconductor device
JPS6342855B2 (en)
JP3487162B2 (en) Bonding tools and bonding equipment
JPS5940537A (en) Manufacture of semiconductor device
JPH07116868A (en) Method and device for joining metallic material
JP3397136B2 (en) Bonding tools and bonding equipment
JPH04372146A (en) Wire bonding device
JP2814608B2 (en) Wire bonding method
JP3409683B2 (en) Bonding tool and bonding device for bumped electronic components
JP2565009B2 (en) Wire bonding method
JPH0669290A (en) Wire bonding apparatus and method
JPS61196544A (en) Die-bonding for semiconductor chip
JP3408443B2 (en) Method of mounting semiconductor chip on substrate using ultrasonic composite vibration
JPS5826528Y2 (en) hand tai souchi no seizou sochi
JPS62123728A (en) Wire bonding method and device therefor
JPS596550A (en) Semiconductor element fixing device
JPH10175083A (en) Ultrasonic welding method and its machine
JPH02285652A (en) Semiconductor bonding device
JPS62145825A (en) Ultrasonic die bonder head