JPH0481325B2 - - Google Patents
Info
- Publication number
- JPH0481325B2 JPH0481325B2 JP57107794A JP10779482A JPH0481325B2 JP H0481325 B2 JPH0481325 B2 JP H0481325B2 JP 57107794 A JP57107794 A JP 57107794A JP 10779482 A JP10779482 A JP 10779482A JP H0481325 B2 JPH0481325 B2 JP H0481325B2
- Authority
- JP
- Japan
- Prior art keywords
- gas
- etching
- discharge
- electrode
- electrodes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 150000002500 ions Chemical class 0.000 claims description 29
- 238000010884 ion-beam technique Methods 0.000 claims description 18
- 239000007789 gas Substances 0.000 description 51
- 238000005530 etching Methods 0.000 description 32
- 238000000034 method Methods 0.000 description 19
- 235000012431 wafers Nutrition 0.000 description 8
- 239000011261 inert gas Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000000992 sputter etching Methods 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000007935 neutral effect Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 239000002784 hot electron Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000007737 ion beam deposition Methods 0.000 description 1
- 230000005596 ionic collisions Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000006386 neutralization reaction Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 239000011253 protective coating Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 230000002459 sustained effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10779482A JPS58225637A (ja) | 1982-06-23 | 1982-06-23 | イオンビ−ム装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10779482A JPS58225637A (ja) | 1982-06-23 | 1982-06-23 | イオンビ−ム装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58225637A JPS58225637A (ja) | 1983-12-27 |
| JPH0481325B2 true JPH0481325B2 (zh) | 1992-12-22 |
Family
ID=14468194
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10779482A Granted JPS58225637A (ja) | 1982-06-23 | 1982-06-23 | イオンビ−ム装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58225637A (zh) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4761199A (en) * | 1985-04-10 | 1988-08-02 | Canon Kabushiki Kaisha | Shutter device for ion beam etching apparatus and such etching apparatus using same |
| JPS63119237A (ja) * | 1986-11-06 | 1988-05-23 | Matsushita Electric Ind Co Ltd | エツチング方法 |
| KR20040046571A (ko) * | 2002-11-27 | 2004-06-05 | 주식회사 피앤아이 | 이온빔을 이용한 재료의 표면 처리 장치 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52127167A (en) * | 1976-04-19 | 1977-10-25 | Fujitsu Ltd | Etching method |
| JPS5368075A (en) * | 1976-11-29 | 1978-06-17 | Nec Corp | Manufacture of element containing micro pattern |
| JPS5832417A (ja) * | 1981-08-21 | 1983-02-25 | Matsushita Electric Ind Co Ltd | プラズマエツチング装置及びプラズマエツチング方法 |
-
1982
- 1982-06-23 JP JP10779482A patent/JPS58225637A/ja active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52127167A (en) * | 1976-04-19 | 1977-10-25 | Fujitsu Ltd | Etching method |
| JPS5368075A (en) * | 1976-11-29 | 1978-06-17 | Nec Corp | Manufacture of element containing micro pattern |
| JPS5832417A (ja) * | 1981-08-21 | 1983-02-25 | Matsushita Electric Ind Co Ltd | プラズマエツチング装置及びプラズマエツチング方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58225637A (ja) | 1983-12-27 |
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