JPH0480875B2 - - Google Patents

Info

Publication number
JPH0480875B2
JPH0480875B2 JP5717485A JP5717485A JPH0480875B2 JP H0480875 B2 JPH0480875 B2 JP H0480875B2 JP 5717485 A JP5717485 A JP 5717485A JP 5717485 A JP5717485 A JP 5717485A JP H0480875 B2 JPH0480875 B2 JP H0480875B2
Authority
JP
Japan
Prior art keywords
melt
crucible
crystal
pulling
single crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP5717485A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61215285A (ja
Inventor
Sumio Kobayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Steel Corp
Original Assignee
Sumitomo Metal Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Metal Industries Ltd filed Critical Sumitomo Metal Industries Ltd
Priority to JP5717485A priority Critical patent/JPS61215285A/ja
Publication of JPS61215285A publication Critical patent/JPS61215285A/ja
Publication of JPH0480875B2 publication Critical patent/JPH0480875B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP5717485A 1985-03-20 1985-03-20 結晶成長方法 Granted JPS61215285A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5717485A JPS61215285A (ja) 1985-03-20 1985-03-20 結晶成長方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5717485A JPS61215285A (ja) 1985-03-20 1985-03-20 結晶成長方法

Publications (2)

Publication Number Publication Date
JPS61215285A JPS61215285A (ja) 1986-09-25
JPH0480875B2 true JPH0480875B2 (en:Method) 1992-12-21

Family

ID=13048174

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5717485A Granted JPS61215285A (ja) 1985-03-20 1985-03-20 結晶成長方法

Country Status (1)

Country Link
JP (1) JPS61215285A (en:Method)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0696480B2 (ja) * 1988-02-19 1994-11-30 住友金属工業株式会社 結晶成長方法
JPH02233581A (ja) * 1989-03-07 1990-09-17 Sumitomo Metal Ind Ltd 結晶成長方法
US5363796A (en) * 1991-02-20 1994-11-15 Sumitomo Metal Industries, Ltd. Apparatus and method of growing single crystal
JP2640315B2 (ja) * 1993-03-22 1997-08-13 住友シチックス株式会社 シリコン単結晶の製造方法
JPH06279170A (ja) * 1993-03-29 1994-10-04 Sumitomo Sitix Corp 単結晶の製造方法及びその装置
JPH07267776A (ja) * 1994-03-31 1995-10-17 Sumitomo Sitix Corp 結晶成長方法

Also Published As

Publication number Publication date
JPS61215285A (ja) 1986-09-25

Similar Documents

Publication Publication Date Title
US4040895A (en) Control of oxygen in silicon crystals
EP0635588B1 (en) Improved method for growing silicon crystal
JPH0321515B2 (en:Method)
JP4380204B2 (ja) シリコン単結晶及び単結晶育成方法
JPH1029894A (ja) 単結晶シリコンの比抵抗調整方法および単結晶シリコン製造装置
US5840116A (en) Method of growing crystals
JPH0480875B2 (en:Method)
JPH0379320B2 (en:Method)
JPH03115188A (ja) 単結晶製造方法
JP4013324B2 (ja) 単結晶成長方法
JPH051236B2 (en:Method)
JP5724226B2 (ja) シリコン単結晶の育成方法
US20180030615A1 (en) Methods for producing single crystal silicon ingots with reduced seed end oxygen
JPH07277875A (ja) 結晶成長方法
CN105887187B (zh) 一种硅单晶生长掺杂剂浓度稳定控制方法
JPH07277870A (ja) 結晶成長方法および装置
TWI701363B (zh) 矽單晶長晶方法
JPS5950627B2 (ja) 単結晶シリコン引上装置
JP2600944B2 (ja) 結晶成長方法
JPH03215384A (ja) 結晶成長装置
JPH09235192A (ja) 低酸素濃度単結晶インゴット及び単結晶引上方法
JPH04214091A (ja) 結晶成長方法
JPH06271383A (ja) シリコン単結晶の製造方法
JPS6129914B2 (en:Method)
JP2813150B2 (ja) 単結晶製造方法