JPH0479213A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPH0479213A JPH0479213A JP2193538A JP19353890A JPH0479213A JP H0479213 A JPH0479213 A JP H0479213A JP 2193538 A JP2193538 A JP 2193538A JP 19353890 A JP19353890 A JP 19353890A JP H0479213 A JPH0479213 A JP H0479213A
- Authority
- JP
- Japan
- Prior art keywords
- film
- photoresist film
- photoresist
- exposed
- deposited
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 3
- 239000004065 semiconductor Substances 0.000 title claims description 3
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 37
- 229910052751 metal Inorganic materials 0.000 claims description 24
- 239000002184 metal Substances 0.000 claims description 24
- 238000000034 method Methods 0.000 claims description 14
- 238000000151 deposition Methods 0.000 claims description 8
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 5
- 229910052737 gold Inorganic materials 0.000 description 5
- 239000010931 gold Substances 0.000 description 5
- 230000008021 deposition Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 229910003086 Ti–Pt Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- UUWCBFKLGFQDME-UHFFFAOYSA-N platinum titanium Chemical compound [Ti].[Pt] UUWCBFKLGFQDME-UHFFFAOYSA-N 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
Abstract
Description
【発明の詳細な説明】
庄ＩＬし二利ｊＨＥ比
この発明は、半導体装置の製造方法に関するものであり
、特に被着形成後にエツチングによるパターン形成が困
難な金属のパターン形成に好適する方法に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for manufacturing a semiconductor device, and more particularly to a method suitable for patterning metals for which patterning by etching after deposition is difficult.
徒釆Δ伎五
従来、下地に損傷を与えずにエツチングすることが困難
な金属（金、白金等）をパターニングする場合、第３図
に示すように、絶縁膜２の上に、フォトレジスト膜３を
被着し、金属パターンの必要な部分を露光し、窓開けを
行い、全面に金属膜４を被着した後、フォトレジスト膜
３をその上に被着した金属膜４とともに剥離するリフト
オフ法が用いられてきた。Conventionally, when patterning metals (gold, platinum, etc.) that are difficult to etch without damaging the underlying layer, a photoresist film is used on top of the insulating film 2, as shown in Figure 3. 3 is deposited, the necessary parts of the metal pattern are exposed, a window is opened, and a metal film 4 is deposited on the entire surface, and then the photoresist film 3 is peeled off together with the metal film 4 deposited thereon. law has been used.
なお、下地が酸化膜等エツチング可能な材質で構造的に
もエツチング可能な特殊な状況においては、フォトレジ
スト膜の所定部分を窓開けし、等方性エッチにより、フ
ォトレジスト膜下にアンダーカットをいれ、全面に金属
被着をさせる時、アンダーカットの部分で金属膜を段切
れさせることもできる。この後、その上に被着した金属
膜とともにフォトレジスト膜を剥離すれば、金属膜のパ
ターンが形成される。しかしながら、この方法は下地の
アルミ配線上に金属膜をつけたい場合、エツチングする
だけの膜厚の余裕のない場合等には適用できない。In special situations where the underlying layer is made of an etchable material such as an oxide film and can be structurally etched, a predetermined portion of the photoresist film is opened and an undercut is created under the photoresist film using isotropic etching. When metal is deposited on the entire surface, it is also possible to cut the metal film at the undercut portion. Thereafter, by peeling off the photoresist film together with the metal film deposited thereon, a pattern of the metal film is formed. However, this method cannot be applied when it is desired to attach a metal film to the underlying aluminum wiring, or when there is not enough film thickness for etching.
よ”
上記の通常のリフトオフ法では、フォトレジスト膜３の
側面の金属膜は、フォトレジスト膜３上・絶縁膜２上の
金属膜４と比べ薄くなってはいるが、絶縁膜２上の金属
膜４とつながっているためフォトレジスト膜３をその上
に被着した金属膜４とともに剥離した時、フォトレジス
ト膜側面に被着した金属膜４が第３図すのＡ部分の拡大
図に示す破線５の部分で切れないで、第３図Ｃに示すよ
うにパリ４ａとして残るという欠点があった。In the normal lift-off method described above, the metal film on the side surface of the photoresist film 3 is thinner than the metal film 4 on the photoresist film 3 and the insulating film 2, but the metal film on the insulating film 2 Since it is connected to the film 4, when the photoresist film 3 is peeled off together with the metal film 4 deposited thereon, the metal film 4 deposited on the side surface of the photoresist film is shown in the enlarged view of part A in Figure 3. There was a drawback that the line 5 was not cut at the broken line 5 and remained as a line 4a as shown in FIG. 3C.
このパリは、配線のショートや、後工程でバンブを成長
させる場合、電界の集中等により第４図に示すようなバ
ンプの異常成長、形状異常の原因となる。When the bumps are grown in a later process, these particles cause abnormal growth and shape of the bumps as shown in FIG. 4 due to electric field concentration, etc. when the bumps are grown in a later process.
−めの
本発明は、金属膜がパリと残ることを無くすことを目的
とするもので、フォトレジスト膜を被着形成し所定部分
を窓開けする工程と、前記フォトレジスト膜上に金属膜
を全面に被着形成する工程と、このフォトレジスト膜を
その上に被着した金属膜ともに剥離する工程とからなる
リフトオフ法において、
フォトレジスト膜を被着形成し、所定部分を露光した後
、その上に再度フォトレジスト膜を被着形成し、１回目
の露光部の内側に対応する小面積部を露光した後、１層
目、２層目のフォトレジスト膜を一度に現像し、オーバ
ーハング状の窓開けをする工程を有するものである。- The purpose of the present invention is to eliminate the metal film from remaining crisp, and includes a step of depositing a photoresist film and opening a window in a predetermined portion, and forming a metal film on the photoresist film. In the lift-off method, which consists of a step of depositing the photoresist film on the entire surface and a step of peeling off the photoresist film along with the metal film deposited on it, the photoresist film is deposited, a predetermined portion is exposed, and then the photoresist film is deposited and exposed. After forming a photoresist film again on top and exposing a small area corresponding to the inside of the first exposed area, the first and second photoresist films are developed at once to form an overhang shape. The process involves opening the windows.
１且
１回目のフォトレジスト膜被着・露光のあと、２回目の
フォトレジスト膜被着を行い、１回目の露光部の内側に
対応する小面積部を露光して現像することにより、１層
目の開口部は２層目より大きくなり、オーバーハング形
状を形成することができる。1. After the first photoresist film deposition and exposure, a second photoresist film deposition is performed, and by exposing and developing a small area corresponding to the inside of the first exposure area, one layer is formed. The eye openings are larger than the second layer, allowing an overhang shape to be formed.
尖胤阻 以下、この発明について図面を参照して説明する。tsune hindi The present invention will be explained below with reference to the drawings.
第１図（ａ）に示すように、第１フオトレジスト膜３ａ
を被着し、所定部分を露光（３ａ’ ） した後、窓開
けを行わず、第１図（ｂ）に示すように、第２フオトレ
ジスト膜３ｂを被着し、１回目の露光部３ａ’より内側
の部分を露光する（３ｂ’ ）する。As shown in FIG. 1(a), the first photoresist film 3a
After exposing a predetermined portion to light (3a'), without opening the window, as shown in FIG. 1(b), a second photoresist film 3b is deposited, and the first exposed area 3a is 'The inner part is exposed (3b').
次に、１回目、２回目両露光部分（３ａ”）（３ｂ’
）！ともに現像し、窓開けを行う。こうすれば第１図（
Ｃ）に示すように、窓開は部分はオーバーハング形状と
なる。その後、金属膜４を被着した場合、第１図（ｄ）
に示すように完全に段切れを発生する。Next, both the first and second exposed parts (3a") (3b'
)! Both are developed and the window is opened. In this way, Figure 1 (
As shown in C), the window opening has an overhanging shape. After that, when the metal film 4 is deposited, as shown in FIG. 1(d).
A complete break occurs as shown in .
この後、その上に被着した金属膜４とともに第１、第２
のフォトレジスト膜３ ａ ＋ ３ ｂを剥離すれば、
第１図（ｅ）に示すようにパリのない金属膜４のパター
ンが形成される。After that, together with the metal film 4 deposited thereon, the first and second
If the photoresist film 3a + 3b is peeled off,
As shown in FIG. 1(e), a pattern of the metal film 4 without paris is formed.
天上１１と 次に金バンプの形成方法について説明する。Tenjo 11 and Next, a method for forming gold bumps will be explained.
第２図（ａ）に示すように、周辺をパッシベーション膜
６で覆ったアルミ５上に金バンプを形成させる場合、第
２図（ｂ）に示すように、第２レジスト膜３ａを被着φ
露光したのち、第２レジスト膜３ｂを被着し、１回目の
露光部分３ａ’の内側部分を露光（３ｂ”）し、第１．
第２レジスト膜３ ａ ＋３ｂを現像し、オーバーハン
グ状のレジストを形成する。この上に、Ｔｉ−Ｐｔ（チ
タン−白金）７を被着し、第１．第２レジスト膜３ａ、
３ｂとともに剥離すれば、パリのないＴｉ−Ｐｔのパタ
ーン７が形成できる。As shown in FIG. 2(a), when a gold bump is formed on aluminum 5 whose periphery is covered with a passivation film 6, as shown in FIG. 2(b), a second resist film 3a is deposited φ
After the exposure, a second resist film 3b is applied, and the inner part of the first exposed portion 3a' is exposed (3b''), and the first resist film 3b is coated with the second resist film 3b.
The second resist film 3a+3b is developed to form an overhanging resist. On top of this, Ti-Pt (titanium-platinum) 7 is deposited. second resist film 3a,
If it is peeled off together with 3b, a pattern 7 of Ti--Pt without flash can be formed.
次に、第２図（Ｃ）に示すように、第３のフォトレジス
ト膜３Ｃを被着し、所定部分を窓開けし、その後金バン
プメツキを行えば、突起や変形のない金バンブ８が形成
される。Next, as shown in FIG. 2(C), a third photoresist film 3C is deposited, a predetermined portion is opened, and then gold bump plating is performed to form a gold bump 8 without protrusions or deformation. be done.
発訓ｑ熱策
この発明は、レジスト被着を２回行い、２回目の露光を
１回目の露光部の内側の小面積のみにし、−度に現像し
てレジストをオーバーハング形状にすることによって、
リフトオフ時のパリを無くすことができる。Lesson q Heat Measures This invention is achieved by applying the resist twice, exposing only a small area inside the first exposure area, and developing the resist twice to form an overhang shape. ,
It is possible to eliminate the collision during lift-off.
第１図（ａｔ〜（ｅ）はこの発明の一実施例の方法を説
明するための各工程における縦断面図である。
第２図（ＥＬ）〜ｔｃ）は、この発明の第２実施例の方
法を説明するための各工程における縦断面図である。
第３図（ａｌ〜（Ｃ）は従来方法について説明するため
の各工程の縦断面図である。
第４図は従来方法による不具合な現象を説明するための
バンプの縦断面図である。
３ａ・・・第１フオトレジスト膜、
３ｂ・・・第２フオトレジスト膜、
４・・・・金属膜、
７・・・Ｔｉ−Ｐｔ（チタン白金）膜、第
図
第
図FIGS. 1(a-t) to (e) are vertical cross-sectional views at each step for explaining a method according to an embodiment of the present invention. FIGS. FIG. 3 is a vertical cross-sectional view of each step for explaining the method. FIGS. 3A to 3C are vertical cross-sectional views of each process for explaining the conventional method. FIG. 4 is a vertical cross-sectional view of a bump for explaining the problem caused by the conventional method. 3a ...First photoresist film, 3b...Second photoresist film, 4...Metal film, 7...Ti-Pt (titanium platinum) film, Fig.
Claims (1)
工程と、前記フォトレジスト膜上に金属膜を全面に被着
形成する工程と、このフォトレジスト膜を、その上に被
着した金属膜とともに剥離する工程とからなるリフトオ
フ法において、フォトレジスト膜を被着形成し、所定部
分を露光した後、その上に再度フォトレジスト膜を被着
形成し、１回目の露光部の内側に対応する小面積部を露
光した後、１層目、２層目のフォトレジスト膜を一度に
現像して、オーバーハング状の窓開けをする工程を有す
ることを特徴とする半導体装置の製造方法。a step of depositing a photoresist film and opening a window in a predetermined portion; a step of depositing a metal film on the entire surface of the photoresist film; and a step of depositing the photoresist film on the metal film. In the lift-off method, which consists of a step of peeling off at the same time, a photoresist film is deposited, a predetermined portion is exposed, and then a photoresist film is deposited again on top of it, corresponding to the inside of the first exposed area. 1. A method for manufacturing a semiconductor device, comprising the steps of exposing a small area portion, developing first and second photoresist films at once, and opening an overhang-shaped window.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2193538A JPH0479213A (en) | 1990-07-20 | 1990-07-20 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2193538A JPH0479213A (en) | 1990-07-20 | 1990-07-20 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0479213A true JPH0479213A (en) | 1992-03-12 |
Family
ID=16309742
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2193538A Pending JPH0479213A (en) | 1990-07-20 | 1990-07-20 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0479213A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPWO2005045911A1 (en) * | 2003-11-11 | 2007-11-29 | 旭硝子株式会社 | Pattern forming method, electronic circuit manufactured thereby, and electronic apparatus using the same |
-
1990
- 1990-07-20 JP JP2193538A patent/JPH0479213A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPWO2005045911A1 (en) * | 2003-11-11 | 2007-11-29 | 旭硝子株式会社 | Pattern forming method, electronic circuit manufactured thereby, and electronic apparatus using the same |
| US7790358B2 (en) | 2003-11-11 | 2010-09-07 | Asahi Glass Company, Limited | Pattern formation method, electronic circuit manufactured by the same, and electronic device using the same |
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