JPH0479149B2 - - Google Patents
Info
- Publication number
- JPH0479149B2 JPH0479149B2 JP9525190A JP9525190A JPH0479149B2 JP H0479149 B2 JPH0479149 B2 JP H0479149B2 JP 9525190 A JP9525190 A JP 9525190A JP 9525190 A JP9525190 A JP 9525190A JP H0479149 B2 JPH0479149 B2 JP H0479149B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- gate
- semiconductor
- cathode
- semiconductor region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Thyristors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9525190A JPH03292770A (ja) | 1990-04-10 | 1990-04-10 | 静電誘導サイリスタ |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9525190A JPH03292770A (ja) | 1990-04-10 | 1990-04-10 | 静電誘導サイリスタ |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH03292770A JPH03292770A (ja) | 1991-12-24 |
JPH0479149B2 true JPH0479149B2 (enrdf_load_stackoverflow) | 1992-12-15 |
Family
ID=14132540
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9525190A Granted JPH03292770A (ja) | 1990-04-10 | 1990-04-10 | 静電誘導サイリスタ |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH03292770A (enrdf_load_stackoverflow) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2509127B2 (ja) * | 1992-03-04 | 1996-06-19 | 財団法人半導体研究振興会 | 静電誘導デバイス |
JPH0793425B2 (ja) * | 1992-04-07 | 1995-10-09 | 東洋電機製造株式会社 | プレーナ構造のmos制御サイリスタ |
US5324966A (en) * | 1992-04-07 | 1994-06-28 | Toyo Denki Seizo Kabushiki Kaisha | MOS-controlled thyristor |
US5426314A (en) * | 1992-07-29 | 1995-06-20 | Zaidan Hojin Handotai Kenkyu Shinkokai | Insulated gate control static induction thyristor |
JP2678159B2 (ja) * | 1992-11-06 | 1997-11-17 | 尚茂 玉蟲 | 分割ゲート型カソード短絡構造を有する絶縁ゲート静電誘導サイリスタ |
-
1990
- 1990-04-10 JP JP9525190A patent/JPH03292770A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPH03292770A (ja) | 1991-12-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US5324966A (en) | MOS-controlled thyristor | |
US4338618A (en) | Composite static induction transistor and integrated circuit utilizing same | |
JPH05160407A (ja) | 縦型絶縁ゲート型半導体装置およびその製造方法 | |
JP2750986B2 (ja) | 分割ゲート型カソード短絡構造を有する絶縁ゲート静電誘導サイリスタ | |
US5381025A (en) | Insulated gate thyristor with gate turn on and turn off | |
JPS638624B2 (enrdf_load_stackoverflow) | ||
JPH0479149B2 (enrdf_load_stackoverflow) | ||
US5426314A (en) | Insulated gate control static induction thyristor | |
JPH0231506B2 (enrdf_load_stackoverflow) | ||
US5323029A (en) | Static induction device | |
JP2678159B2 (ja) | 分割ゲート型カソード短絡構造を有する絶縁ゲート静電誘導サイリスタ | |
JPS63209169A (ja) | 絶縁ゲ−ト型サイリスタ | |
JP3161092B2 (ja) | デュアルゲートmosサイリスタ | |
JPH05315618A (ja) | 絶縁ゲート型半導体装置 | |
JPH0793425B2 (ja) | プレーナ構造のmos制御サイリスタ | |
JPS5856270B2 (ja) | 絶縁ゲ−ト型静電誘導電界効果トランジスタ | |
KR100218261B1 (ko) | 모스 제어형 사이리스터 및 그 제조방법 | |
JP3185558B2 (ja) | 絶縁ゲート型サイリスタ | |
JP2982049B2 (ja) | 絶縁ゲート型静電誘導トランジスタ | |
JP2562854B2 (ja) | 制御ゲート付きpnpnサイリスタ | |
JPH05299645A (ja) | Mos補助サイリスタ | |
JPH0812920B2 (ja) | 横型伝導度変調型mosfetおよびその制御方法 | |
JPS6323664B2 (enrdf_load_stackoverflow) | ||
JPH05335556A (ja) | Misゲート型サイリスタを備えた半導体装置 | |
JPS6224953B2 (enrdf_load_stackoverflow) |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
S531 | Written request for registration of change of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313531 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
LAPS | Cancellation because of no payment of annual fees |