JPH0478597B2 - - Google Patents

Info

Publication number
JPH0478597B2
JPH0478597B2 JP20009388A JP20009388A JPH0478597B2 JP H0478597 B2 JPH0478597 B2 JP H0478597B2 JP 20009388 A JP20009388 A JP 20009388A JP 20009388 A JP20009388 A JP 20009388A JP H0478597 B2 JPH0478597 B2 JP H0478597B2
Authority
JP
Japan
Prior art keywords
crystal
znse
grown
solvent
group
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP20009388A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0251498A (ja
Inventor
Yasuo Okuno
Takeshi Maruyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Stanley Electric Co Ltd
Original Assignee
Stanley Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Stanley Electric Co Ltd filed Critical Stanley Electric Co Ltd
Priority to JP20009388A priority Critical patent/JPH0251498A/ja
Publication of JPH0251498A publication Critical patent/JPH0251498A/ja
Publication of JPH0478597B2 publication Critical patent/JPH0478597B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP20009388A 1988-08-12 1988-08-12 2−6族化合物半導体の結晶成長方法 Granted JPH0251498A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20009388A JPH0251498A (ja) 1988-08-12 1988-08-12 2−6族化合物半導体の結晶成長方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20009388A JPH0251498A (ja) 1988-08-12 1988-08-12 2−6族化合物半導体の結晶成長方法

Publications (2)

Publication Number Publication Date
JPH0251498A JPH0251498A (ja) 1990-02-21
JPH0478597B2 true JPH0478597B2 (enrdf_load_stackoverflow) 1992-12-11

Family

ID=16418737

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20009388A Granted JPH0251498A (ja) 1988-08-12 1988-08-12 2−6族化合物半導体の結晶成長方法

Country Status (1)

Country Link
JP (1) JPH0251498A (enrdf_load_stackoverflow)

Also Published As

Publication number Publication date
JPH0251498A (ja) 1990-02-21

Similar Documents

Publication Publication Date Title
US3839084A (en) Molecular beam epitaxy method for fabricating magnesium doped thin films of group iii(a)-v(a) compounds
US4619718A (en) Method of manufacturing a Group II-VI semiconductor device having a PN junction
US4168998A (en) Process for manufacturing a vapor phase epitaxial wafer of compound semiconductor without causing breaking of wafer by utilizing a pre-coating of carbonaceous powder
JPH0821730B2 (ja) 炭化シリコン内に形成した青色発光ダイオード
JPH09512385A (ja) 多層結晶構造及びその製造方法
JPH1074980A (ja) 半導体素子
US4526632A (en) Method of fabricating a semiconductor pn junction
US4735910A (en) In-situ doping of MBE grown II-VI compounds on a homo- or hetero-substrate
US4783426A (en) Method of making a Group II-VI compound semiconductor device by solution growth
KR20070011449A (ko) 카드뮴 수은 텔루라이드의 제조방법
US5856208A (en) Epitaxial wafer and its fabrication method
US5057183A (en) Process for preparing epitaxial II-VI compound semiconductor
US4755856A (en) Znse green light emitting diode
JPH0478597B2 (enrdf_load_stackoverflow)
Triboulet The growth of bulk ZnSe crystals
JPH0548145A (ja) 光半導体装置およびその製造方法
RU2238603C2 (ru) Способ и устройство для термической обработки полупроводниковых соединений ii-vi и полупроводники, подвергшиеся термической обработке с помощью этого способа
Hartmann Vapour phase epitaxy of II–VI compounds: A review
JPS5916393A (ja) 青色発光素子
JPH0334534A (ja) 燐添加2‐6族化合物半導体の製造方法
JPS6351553B2 (enrdf_load_stackoverflow)
JP2650635B2 (ja) Ii−vi族化合物半導体薄膜の製法
JPS6118184A (ja) 発光素子
JPH05175124A (ja) 半導体薄膜の製造方法
JPH03160734A (ja) 砒素添加2―6族化合物半導体の製造方法