JPH0477518A - Liquid epoxy resin composition and resin sealing-type semiconductor device - Google Patents
Liquid epoxy resin composition and resin sealing-type semiconductor deviceInfo
- Publication number
- JPH0477518A JPH0477518A JP2184210A JP18421090A JPH0477518A JP H0477518 A JPH0477518 A JP H0477518A JP 2184210 A JP2184210 A JP 2184210A JP 18421090 A JP18421090 A JP 18421090A JP H0477518 A JPH0477518 A JP H0477518A
- Authority
- JP
- Japan
- Prior art keywords
- epoxy resin
- resin
- resin composition
- liquid epoxy
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000203 mixture Substances 0.000 title claims abstract description 37
- 239000004065 semiconductor Substances 0.000 title claims abstract description 31
- 229920005989 resin Polymers 0.000 title claims abstract description 22
- 239000011347 resin Substances 0.000 title claims abstract description 22
- 239000004850 liquid epoxy resins (LERs) Substances 0.000 title claims description 32
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 12
- 239000005011 phenolic resin Substances 0.000 claims abstract description 12
- 239000003960 organic solvent Substances 0.000 claims abstract description 9
- 239000000126 substance Substances 0.000 claims description 10
- 125000000217 alkyl group Chemical group 0.000 claims description 4
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 4
- 125000004432 carbon atom Chemical group C* 0.000 claims description 2
- 239000003822 epoxy resin Substances 0.000 abstract description 35
- 229920000647 polyepoxide Polymers 0.000 abstract description 35
- 229920001568 phenolic resin Polymers 0.000 abstract description 7
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 abstract description 6
- 125000003700 epoxy group Chemical group 0.000 abstract description 6
- 125000002887 hydroxy group Chemical group [H]O* 0.000 abstract description 6
- 238000000034 method Methods 0.000 abstract description 5
- 238000007789 sealing Methods 0.000 abstract description 4
- 150000001298 alcohols Chemical class 0.000 abstract description 2
- 150000002576 ketones Chemical class 0.000 abstract description 2
- 239000004593 Epoxy Substances 0.000 description 19
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 17
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 17
- 229910052794 bromium Inorganic materials 0.000 description 17
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 13
- 229920003986 novolac Polymers 0.000 description 12
- 230000035939 shock Effects 0.000 description 12
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 11
- 239000000843 powder Substances 0.000 description 11
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 10
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 9
- 238000012360 testing method Methods 0.000 description 8
- 229930185605 Bisphenol Natural products 0.000 description 7
- -1 alkane epoxide Chemical class 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 6
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 6
- 238000011156 evaluation Methods 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 5
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 5
- 239000011256 inorganic filler Substances 0.000 description 4
- 229910003475 inorganic filler Inorganic materials 0.000 description 4
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 2
- PLIKAWJENQZMHA-UHFFFAOYSA-N 4-aminophenol Chemical compound NC1=CC=C(O)C=C1 PLIKAWJENQZMHA-UHFFFAOYSA-N 0.000 description 2
- RGHHSNMVTDWUBI-UHFFFAOYSA-N 4-hydroxybenzaldehyde Chemical compound OC1=CC=C(C=O)C=C1 RGHHSNMVTDWUBI-UHFFFAOYSA-N 0.000 description 2
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 239000006087 Silane Coupling Agent Substances 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 239000007983 Tris buffer Substances 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 229930003836 cresol Natural products 0.000 description 2
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 2
- 235000019441 ethanol Nutrition 0.000 description 2
- 239000003063 flame retardant Substances 0.000 description 2
- 239000005350 fused silica glass Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229930195733 hydrocarbon Natural products 0.000 description 2
- 150000002430 hydrocarbons Chemical class 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 description 2
- CWERGRDVMFNCDR-UHFFFAOYSA-N thioglycolic acid Chemical compound OC(=O)CS CWERGRDVMFNCDR-UHFFFAOYSA-N 0.000 description 2
- RIOQSEWOXXDEQQ-UHFFFAOYSA-N triphenylphosphine Chemical compound C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 RIOQSEWOXXDEQQ-UHFFFAOYSA-N 0.000 description 2
- AJDIZQLSFPQPEY-UHFFFAOYSA-N 1,1,2-Trichlorotrifluoroethane Chemical compound FC(F)(Cl)C(F)(Cl)Cl AJDIZQLSFPQPEY-UHFFFAOYSA-N 0.000 description 1
- KJCVRFUGPWSIIH-UHFFFAOYSA-N 1-naphthol Chemical compound C1=CC=C2C(O)=CC=CC2=C1 KJCVRFUGPWSIIH-UHFFFAOYSA-N 0.000 description 1
- RNFJDJUURJAICM-UHFFFAOYSA-N 2,2,4,4,6,6-hexaphenoxy-1,3,5-triaza-2$l^{5},4$l^{5},6$l^{5}-triphosphacyclohexa-1,3,5-triene Chemical compound N=1P(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP=1(OC=1C=CC=CC=1)OC1=CC=CC=C1 RNFJDJUURJAICM-UHFFFAOYSA-N 0.000 description 1
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 1
- SVONRAPFKPVNKG-UHFFFAOYSA-N 2-ethoxyethyl acetate Chemical compound CCOCCOC(C)=O SVONRAPFKPVNKG-UHFFFAOYSA-N 0.000 description 1
- LXBGSDVWAMZHDD-UHFFFAOYSA-N 2-methyl-1h-imidazole Chemical compound CC1=NC=CN1 LXBGSDVWAMZHDD-UHFFFAOYSA-N 0.000 description 1
- WADSJYLPJPTMLN-UHFFFAOYSA-N 3-(cycloundecen-1-yl)-1,2-diazacycloundec-2-ene Chemical compound C1CCCCCCCCC=C1C1=NNCCCCCCCC1 WADSJYLPJPTMLN-UHFFFAOYSA-N 0.000 description 1
- ULKLGIFJWFIQFF-UHFFFAOYSA-N 5K8XI641G3 Chemical compound CCC1=NC=C(C)N1 ULKLGIFJWFIQFF-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- BRLQWZUYTZBJKN-UHFFFAOYSA-N Epichlorohydrin Chemical compound ClCC1CO1 BRLQWZUYTZBJKN-UHFFFAOYSA-N 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- 239000005909 Kieselgur Substances 0.000 description 1
- 239000002841 Lewis acid Substances 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- GOOHAUXETOMSMM-UHFFFAOYSA-N Propylene oxide Chemical compound CC1CO1 GOOHAUXETOMSMM-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 150000001335 aliphatic alkanes Chemical class 0.000 description 1
- 150000008044 alkali metal hydroxides Chemical class 0.000 description 1
- 125000004849 alkoxymethyl group Chemical group 0.000 description 1
- 125000002947 alkylene group Chemical group 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910000410 antimony oxide Inorganic materials 0.000 description 1
- 150000001491 aromatic compounds Chemical class 0.000 description 1
- 239000012752 auxiliary agent Substances 0.000 description 1
- WPUJEWVVTKLMQI-UHFFFAOYSA-N benzene;ethoxyethane Chemical compound CCOCC.C1=CC=CC=C1 WPUJEWVVTKLMQI-UHFFFAOYSA-N 0.000 description 1
- 239000004305 biphenyl Substances 0.000 description 1
- 235000010290 biphenyl Nutrition 0.000 description 1
- 239000006229 carbon black Substances 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 150000008280 chlorinated hydrocarbons Chemical class 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 239000000975 dye Substances 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- 125000005843 halogen group Chemical group 0.000 description 1
- 125000004464 hydroxyphenyl group Chemical group 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 150000007517 lewis acids Chemical class 0.000 description 1
- UJNZOIKQAUQOCN-UHFFFAOYSA-N methyl(diphenyl)phosphane Chemical compound C=1C=CC=CC=1P(C)C1=CC=CC=C1 UJNZOIKQAUQOCN-UHFFFAOYSA-N 0.000 description 1
- 125000000325 methylidene group Chemical group [H]C([H])=* 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 150000007522 mineralic acids Chemical class 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- VTRUBDSFZJNXHI-UHFFFAOYSA-N oxoantimony Chemical compound [Sb]=O VTRUBDSFZJNXHI-UHFFFAOYSA-N 0.000 description 1
- 150000003003 phosphines Chemical class 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 235000011121 sodium hydroxide Nutrition 0.000 description 1
- 239000012756 surface treatment agent Substances 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- 239000000454 talc Substances 0.000 description 1
- 229910052623 talc Inorganic materials 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- TUQOTMZNTHZOKS-UHFFFAOYSA-N tributylphosphine Chemical compound CCCCP(CCCC)CCCC TUQOTMZNTHZOKS-UHFFFAOYSA-N 0.000 description 1
- WLPUWLXVBWGYMZ-UHFFFAOYSA-N tricyclohexylphosphine Chemical compound C1CCCCC1P(C1CCCCC1)C1CCCCC1 WLPUWLXVBWGYMZ-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
Landscapes
- Epoxy Resins (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Compositions Of Macromolecular Compounds (AREA)
Abstract
Description
【発明の詳細な説明】
［発明の目的］
（産業上の利用分野）
本発明は、ＴＡＢ方式によってボンディングされた半導
体素子を封止するのに好適な液状エポキシ樹脂組成物及
び係る液状エポキシ樹脂組成物を用いた樹脂封止型半導
体装置に関する。Detailed Description of the Invention [Object of the Invention] (Industrial Field of Application) The present invention provides a liquid epoxy resin composition suitable for sealing a semiconductor element bonded by the TAB method, and the liquid epoxy resin composition. The present invention relates to a resin-sealed semiconductor device using a semiconductor device.
（従来の技術）
近年のワープロ、電卓、ＩＣカード等電子機器の小型化
、薄型化に伴ない、このような電子機器内部に組み込ま
れる半導体装置にも、従来以上に小型、＃型化が要求さ
れている。このような要求に応えるために、半導体素子
のボンディングをＴＡＢ方式により行ない、係る半導体
素子に慴脂をコーティングして封止する技術が最近注目
されており、例えば特開昭５９−２２７１４６号には、
半導体素子に液状エポキシ樹脂をコーティングすること
によって封止された樹脂封止型半導体装置が開示されて
いる。(Prior art) As electronic devices such as word processors, calculators, and IC cards have become smaller and thinner in recent years, semiconductor devices built into such electronic devices are also required to be smaller and more compact than before. has been done. In order to meet these demands, a technique of bonding semiconductor elements using the TAB method and coating the semiconductor elements with resin and sealing them has recently attracted attention. ,
A resin-sealed semiconductor device is disclosed in which a semiconductor element is sealed by coating a liquid epoxy resin.
ところでこのような樹脂に対しては、係る樹脂によって
封止されてなる半導体装置の信頼性を確保するため、電
気特性、熱的特性１機械的特性などの諸特性が優れてい
ることが求められている。By the way, such resins are required to have excellent electrical properties, thermal properties, mechanical properties, and other properties in order to ensure the reliability of semiconductor devices sealed with such resins. ing.
特に、現在半導体素子の面積が大型化する傾向にあり、
これに伴ない、半導体素子と樹脂との熱膨張係数の不整
合に起因して樹脂中に残留する応力が増大しているため
、このような樹脂封止型半導体装置の耐熱衝撃性を一層
向上せしめることが必要となっている。またこのような
半導体装置では、配線幅の微細化が今後−層加速され、
係る配線における腐食、マイグレーション等の不良発生
のおそれがさらに増大する傾向にあるため、電気特性や
耐湿性に対する要求も、益々高まっている。しかしなが
らこのような耐熱衝撃性、高温電気特性。In particular, the area of semiconductor devices is currently becoming larger.
Along with this, the stress remaining in the resin is increasing due to the mismatch in the coefficient of thermal expansion between the semiconductor element and the resin, so it is necessary to further improve the thermal shock resistance of such resin-sealed semiconductor devices. It has become necessary to encourage them. In addition, in such semiconductor devices, the miniaturization of wiring width will accelerate in the future.
Since the risk of occurrence of defects such as corrosion and migration in such wiring tends to further increase, demands for electrical characteristics and moisture resistance are also increasing. However, such thermal shock resistance and high temperature electrical properties.
耐湿性等を鑑みた場合、液状エポキシ樹脂をコーティン
グすることにより封止された樹脂封止型半導体装置では
、未だ充分な特性が得られてはいないのが現状であった
。In view of moisture resistance and the like, resin-sealed semiconductor devices sealed by coating with liquid epoxy resin have not yet achieved sufficient characteristics.
（発明が解決しようとする課８）
上述したように、従来の液状エポキシ樹脂組成物によっ
て半導体素子を封止した場合、得られる半導体装置の耐
熱衝撃性、高温電気特性、耐湿性が不充分であるという
問題があった。(Issue 8 to be solved by the invention) As mentioned above, when a semiconductor element is encapsulated with a conventional liquid epoxy resin composition, the resulting semiconductor device has insufficient thermal shock resistance, high-temperature electrical properties, and moisture resistance. There was a problem.
本発明ではこのような問題を解決して、半導体素子を封
止したとき、得られる半導体装置に優れた耐熱衝撃性、
高温電気特性及び耐湿性を付与せしめることのできる液
状エポキシ樹脂組成物、及びこのような液状エポキシ樹
脂組成物によって封止されてなる信頼性の高い樹脂封止
型半導体装置を提供することを目的としている。The present invention solves these problems, and when a semiconductor element is encapsulated, the resulting semiconductor device has excellent thermal shock resistance,
The purpose of the present invention is to provide a liquid epoxy resin composition that can impart high-temperature electrical properties and moisture resistance, and a highly reliable resin-encapsulated semiconductor device sealed with such a liquid epoxy resin composition. There is.
［発明の構成］
（課題を解決するための手段及び作用）本発明の液状エ
ポキシ樹脂組成物は、（ａ）下記一般式（１）で表わさ
れるエポキシ樹脂と、（ｂ）硬化剤としてのフェノール
樹脂と、（ｅ）有機溶剤とを含有するものであり、特に
下記一般式（１）で特定されるエポキシ樹脂を含有する
ことを特徴としている。[Structure of the Invention] (Means and Effects for Solving the Problems) The liquid epoxy resin composition of the present invention comprises (a) an epoxy resin represented by the following general formula (1), and (b) phenol as a curing agent. It contains a resin and (e) an organic solvent, and is particularly characterized by containing an epoxy resin specified by the following general formula (1).
（ただしＲ，Ｒ２はそれ・ぞれ、水素原子又は炭素数１
〜２０のアルキル基を表し、ｎはＯ又は正の整数を示す
。）
本発朋において（ａ）成分の一般式（１）で表されるエ
ポキシ樹脂は、例えば、アルキルフェノール類とヒドロ
キシベンズアルデヒドとの縮合物をエポキシ化すること
により製造される。すなわち、まず周知のノボラックを
合成する反応を適用し、塩酸、硫酸等の無機酸、酢酸、
ｐ−）Ｖ’エンスルホン酸、チオグリコール酸等の有機
酸、ルイス酸等の酸性触媒下６アルキルフエノール類と
ヒドロキシベンズアルデヒドを３０〜１８０℃の温度で
縮合させる。次いで、得られた縮合物とエピクロルヒド
リンとを苛性ソーダ等のアルカリ金属水酸化物の存在Ｖ
で反応させ、前記縮合物をエポキシ化すればよい。なお
、本発明では、このようなエポキシ樹脂の分子量が大き
過ぎると得られるエポキシ樹脂組成物の流動性が低下す
るので、本発明に係るエポキシ樹脂は上記一般式（Ｉ）
においてｎ≦２０であることが好ましい。また、このよ
うな本発明に係るエポキシ樹脂中には、一部のエポキシ
基同志が反応することにより生成される一般式（ＩＩ）
で表される壬ボキシ樹脂が含有されていることがあり、
本発明では、エポキシ樹脂中にこのような一般式（ＩＩ
）で表されるエポキシ樹脂が含まれていても構わない。(However, R and R2 each represent a hydrogen atom or a carbon number of 1
~20 alkyl group, n represents O or a positive integer. ) In the present invention, the epoxy resin represented by the general formula (1) as component (a) is produced, for example, by epoxidizing a condensate of alkylphenols and hydroxybenzaldehyde. That is, first, a well-known reaction for synthesizing novolak is applied, and inorganic acids such as hydrochloric acid and sulfuric acid, acetic acid,
p-) V' Hexa-alkyl phenols and hydroxybenzaldehyde are condensed at a temperature of 30 to 180°C under an acidic catalyst such as an organic acid such as V'enesulfonic acid or thioglycolic acid or a Lewis acid. Next, the obtained condensate and epichlorohydrin are mixed in the presence of an alkali metal hydroxide such as caustic soda.
The condensate may be epoxidized by the reaction. In addition, in the present invention, if the molecular weight of such an epoxy resin is too large, the fluidity of the obtained epoxy resin composition decreases, so the epoxy resin according to the present invention has the above general formula (I).
It is preferable that n≦20. In addition, in the epoxy resin according to the present invention, general formula (II) produced by the reaction of some epoxy groups with each other is present.
It may contain tsubo boxy resin represented by
In the present invention, such general formula (II
) may contain an epoxy resin represented by
しかしながら、係る一般式（ｎ）で表されるエポキシ樹
脂の含有量が多いと、得られる液状エポキシ樹脂組成物
の特性が低下するおそれがあるので、本発明に係る一般
式＜１）で表されるエポキシ樹脂としては、このような
一般式（■）で表されるエポキシ樹脂の含有量が少ない
ものを用いるのがより望ましい。However, if the content of the epoxy resin represented by the general formula (n) is large, the properties of the obtained liquid epoxy resin composition may deteriorate. It is more desirable to use an epoxy resin with a small content of the epoxy resin represented by the general formula (■).
（ただしＲ、Ｒはそれぞれ、水素原子又は炭素数１〜２
０のアルキル基を表し、ｎは０又は正の整数を示す。）
一般式（１）で表されるエポキシ樹脂の具体例としては
、ＥＰＰＮ−５０２（日本化薬■製。(However, R and R are each a hydrogen atom or a carbon number of 1 to 2
represents an alkyl group of 0, and n represents 0 or a positive integer. ) A specific example of the epoxy resin represented by the general formula (1) is EPPN-502 (manufactured by Nippon Kayaku ■).
軟化点７０℃、エポキシ当量１７０）、ＹＬ−９３２Ｈ
（油化シェル■製、軟化点り３℃、エポキシ当ｊｌ１７
１）、ＥＳＸ−２２１（住友化学翰製、軟化点り５℃、
エポキシ当ｍ２１０）等が挙げられる。Softening point 70°C, epoxy equivalent 170), YL-932H
(Made by Yuka Shell ■, softening point 3℃, epoxy equivalent Jl17
1), ESX-221 (manufactured by Sumitomo Chemical, softening point 5°C,
Examples include epoxy (m210) and the like.
また本発明では、一般式（Ｉ）で表される前記エポキシ
樹脂以外のエポキシ樹脂を併用することができる。この
ようなエポキシ樹脂としては、１分子中に２個以上のエ
ポキシ基を有するものであれば特に限定されず、本発明
の作用効果を損わない範囲で適宜併用できる。具体的に
は、フェノールノボラック型エポキシ樹脂、クレゾール
ノボラック型エポキシ樹脂、ナフトールタイプのノボラ
ック型エポキシ樹脂、ビスフェノールＡのノボラック型
エボ牛シ樹脂、トリス（ヒドロキシフェニル）アルカン
のエポキシ化物、テトラ（ヒドロキシフェニル）アルカ
ンのエポキシ化物、２．２°。Further, in the present invention, epoxy resins other than the above-mentioned epoxy resin represented by general formula (I) can be used in combination. Such epoxy resins are not particularly limited as long as they have two or more epoxy groups in one molecule, and can be used in combination as appropriate as long as the effects of the present invention are not impaired. Specifically, phenol novolac type epoxy resin, cresol novolac type epoxy resin, naphthol type novolac type epoxy resin, bisphenol A novolac type evo-silica resin, tris(hydroxyphenyl)alkane epoxide, tetra(hydroxyphenyl) Alkane epoxide, 2.2°.
４．４°−テトラグリシドキシベンゾフェノン、バラア
ミノフェノールのヒリグリシジルエーテル、ポリアリル
グリシジルエーテル、 １．３．５−）リグリシジルエ
ーテルベンゼン、２，２°、４．４°−テトラグリシド
キシビフェニル等が挙げられる。これらのうちＩＦｆｉ
又は２ＦＩｉ以上を用いることができる。4.4°-tetraglycidoxybenzophenone, hylyglycidyl ether of paraaminophenol, polyallylglycidyl ether, 1.3.5-)liglycidyl ether benzene, 2,2°,4.4°-tetraglycidyl ether Examples include biphenyl. Among these, IFfi
Alternatively, 2FIi or more can be used.
本発明において、（ｂ）成分の硬化剤としてのフェノー
ル樹脂は、一般にエポキシ樹脂の硬化剤として用いられ
る１分子中に２個以上のフェノール性水Ｕ基を有するも
のであればいかなるものでも良く、例えば、フェノール
アラルキル樹脂。In the present invention, the phenolic resin as the curing agent of component (b) may be any resin as long as it has two or more phenolic water U groups in one molecule, which is generally used as a curing agent for epoxy resins. For example, phenolic aralkyl resins.
フェノールノボラック樹脂、ポリオキシスチレン。Phenolic novolac resin, polyoxystyrene.
れ
下記構造式で表さＶるトリス（ヒドロキシフェニル）ア
ルカンなどを用いることができる。For example, tris(hydroxyphenyl)alkane represented by the following structural formula can be used.
（式中、Ｒ，Ｒ２は水素原子又は炭素数１〜２０のアル
キル基を尽し、同一でも異なっていてもよい。Ｒ３は単
結合、又はメチレン、エチレンなどのアルキレン基を示
す。）
本発明では、上述したようなフェノール樹脂のうちフェ
ノールアラルキル樹脂を用いれば、得られる樹脂封止型
半導体装置の耐熱衝撃性向上が顕著となるので、より好
ましい。このようなフェノールアラルキル樹脂は、例え
ば、フェノール類とアラルキルエーテルとをフリー、デ
ルクラフッ反応によって縮合させることにより製造され
る。このときのフェノール類としては、フェノール、メ
チルフェノール、ビスフェノールなどを用いることがで
き、またアラルキルエーテルとしては、α。(In the formula, R and R2 represent a hydrogen atom or an alkyl group having 1 to 20 carbon atoms, and may be the same or different. R3 represents a single bond or an alkylene group such as methylene or ethylene.) The present invention Among the above-mentioned phenolic resins, it is more preferable to use a phenol aralkyl resin because the thermal shock resistance of the resulting resin-sealed semiconductor device is significantly improved. Such a phenolic aralkyl resin is produced, for example, by condensing a phenol and an aralkyl ether by a free, Delclafluor reaction. As the phenol at this time, phenol, methylphenol, bisphenol, etc. can be used, and as the aralkyl ether, α.
α−ジメトキシ−ｐ−キシレン、α、α−ジメトキシー
〇−キシレン、ａ、ａ−ジメトキシ−ｍ−キシレン、ａ
、α−ジェトキシ−ｐ−キシレン。α-dimethoxy-p-xylene, α, α-dimethoxy〇-xylene, a, a-dimethoxy-m-xylene, a
, α-jethoxy-p-xylene.
ａ、α−ジブトキシ−ｐ−キシレン等２価以上のアルコ
キシメチル基を持つ芳香族が一般に使用される。係るフ
ェノールアラルキル樹脂の具体例としては、ＸＬ−２２
５（三井東圧化学■製、軟化点９４℃）、ＸＬ−ｊ２５
Ｌ （三井東圧化学■製、軟化点り４℃、水酸基当ｊ１
１８ Ｇ）、ＸＬ−３２５（三井東圧化学■製、軟化点
９５℃）等が挙げられる。Aromatic compounds having an alkoxymethyl group of divalent or higher valence, such as a, α-dibutoxy-p-xylene, are generally used. Specific examples of such phenol aralkyl resin include XL-22
5 (manufactured by Mitsui Toatsu Chemical ■, softening point 94℃), XL-j25
L (manufactured by Mitsui Toatsu Chemical Co., Ltd., softening point 4℃, hydroxyl group j1
18G), XL-325 (manufactured by Mitsui Toatsu Chemical Co., Ltd., softening point 95°C), and the like.
また、（ｂ）成分の硬化剤としてのフェノール樹脂の配
合量は、フェノール樹脂中のフェノール性水酸基とエポ
キシ樹脂中のエポキシ基との比が０．５〜２．０の範囲
内となるように設定することが好ましい。これは上述し
たような比が０．゛５未満だと得られる樹脂の強度が低
下し、２．０を越えると樹脂の耐湿性が低下するおそれ
がある。さらには、上記したようなフェノール性水酸基
とエポキシ基の数が化学量論的に等しくなるように前記
フェノール樹脂を配合するのがより好ましい。In addition, the amount of the phenol resin as the curing agent of component (b) is adjusted so that the ratio of the phenolic hydroxyl group in the phenol resin to the epoxy group in the epoxy resin is within the range of 0.5 to 2.0. It is preferable to set This means that the ratio as mentioned above is 0. If it is less than 5, the strength of the resulting resin may decrease, and if it exceeds 2.0, the moisture resistance of the resin may decrease. Furthermore, it is more preferable to blend the phenolic resin so that the numbers of phenolic hydroxyl groups and epoxy groups as described above are stoichiometrically equal.
本発明において、（Ｃ）成分の有機溶剤は、通常液状エ
ポキシ樹脂組成物に用いられるものであれば特に限定さ
れず、エチルアルコール等のアルコール類、アセトン等
のケトン類、エチルエーテル等のエーテル類、プロピレ
ンオキサイド等のオキサイド類、酢酸エチル等のエステ
ル類、四塩化炭素等の塩素化炭化水素類、フロン１１３
等のフッ素化炭化水素類、トルエン等の度化水素類。In the present invention, the organic solvent of component (C) is not particularly limited as long as it is normally used in liquid epoxy resin compositions, and includes alcohols such as ethyl alcohol, ketones such as acetone, and ethers such as ethyl ether. , oxides such as propylene oxide, esters such as ethyl acetate, chlorinated hydrocarbons such as carbon tetrachloride, Freon 113
fluorinated hydrocarbons such as toluene, etc., and hydrocarbons such as toluene.
エチルセロソルブ、メチルセロソルブ、酢酸セロソルブ
等のセロソルブ類等が挙げられる。Examples include cellosolves such as ethyl cellosolve, methyl cellosolve, and acetic acid cellosolve.
さらに本発明の液状エポキシ樹脂組成物においては、必
要に応じて無機質充填剤を添加、配合せしめることもで
きる。本発明ではこのような無機質充填剤の添加により
、液状エポキシ樹脂組成物の熱膨張係数を調整すること
ができる。係る無機質充填剤の具体例としては、石英粉
末、溶融シリカ粉末、酸化チタン粉末、窒化ケイ素粉末
、窒化アルミニウム粉末、タルク、アルミナ粉末、ケイ
藻土、水和アルミナ粉末、ガラス繊維１球状ガラス粉末
、ガラスマイクロバルーン、球状溶融シリカ粉末、セラ
ミック粉末、ウィスカ、酸化アンチモン粉末等が挙げら
れる。なお、このような無機質充填剤の配合量は特に限
定されないが、通常有機溶剤を除く他の成分に対して、
４０〜７５ｖｏ１％程度である。Furthermore, in the liquid epoxy resin composition of the present invention, an inorganic filler can be added and blended as necessary. In the present invention, the thermal expansion coefficient of the liquid epoxy resin composition can be adjusted by adding such an inorganic filler. Specific examples of such inorganic fillers include quartz powder, fused silica powder, titanium oxide powder, silicon nitride powder, aluminum nitride powder, talc, alumina powder, diatomaceous earth, hydrated alumina powder, glass fiber 1 spherical glass powder, Examples include glass microballoons, spherical fused silica powder, ceramic powder, whiskers, and antimony oxide powder. Note that the amount of such inorganic filler added is not particularly limited, but it is usually in the amount of other ingredients excluding organic solvent.
It is about 40-75vo1%.
また本発明の液状エポキシ樹脂組成物では、エポキシ樹
脂と硬化剤としてのフェノール樹脂との硬化反応を促進
するため、適当な硬化促進剤を添加、配合しても良い。Further, in the liquid epoxy resin composition of the present invention, an appropriate curing accelerator may be added or blended in order to promote the curing reaction between the epoxy resin and the phenol resin as a curing agent.
このような硬化促進剤の具体例としては、２−メチルイ
ミダゾール、２−エチル−４−メチルイミダゾール、１
−シアノエチル−２−エチル−メチルイミダゾール等の
イミダン化合物、トリフェニルホスフィン、トリシクロ
ヘキシルホスフィン、トリブチルホスフィン、メチルジ
フェニルホスフィン等の有機ホスフィン化合物、ジアザ
ビシクロウンデセンやその塩等が挙げられる。Specific examples of such curing accelerators include 2-methylimidazole, 2-ethyl-4-methylimidazole, 1
Examples include imidane compounds such as -cyanoethyl-2-ethyl-methylimidazole, organic phosphine compounds such as triphenylphosphine, tricyclohexylphosphine, tributylphosphine, and methyldiphenylphosphine, diazabicycloundecene and salts thereof, and the like.
さらに本発明では、難燃性付与剤として上記液状エポキ
シ樹脂組成物中にハロゲン化エポキシ樹脂を含有せしめ
ることもできる。このようなハロゲン化エポキシ樹脂と
しては、１分子中に２個以上のエポキシ基を有し、臭素
、塩素等のハロゲン原子を含むもの、すなわちビスフェ
ノール型エポ牛シ樹脂やノボラック型エポキシ樹脂の臭
素化物等を用いることができ、好ましくは臭素含有量２
０重量％以上の臭素化ビスフェノール型エポキシ樹脂、
臭素化ノボラック型エポキシ樹脂であり、さらに好まし
くは、臭素含有量４０重量％以上の臭素化ビスフェノー
ル型゛エポキシ樹脂である。係るハロゲン化エポキシ樹
脂の具体例としては、ＡＥＲ−７３５（臭素含有量４８
．１ｆｒｆｆｉ％、エポキシ当ｆ１３５０．軟化点室温
で柔軟、ビスフェノール型、旭化成工業−製）、ＡＥＲ
−７４５（臭素含有量４８．５重量％、エポキシ当量４
０２．軟化点７１℃、ビスフェノール型、旭化成工業■
製）。Furthermore, in the present invention, a halogenated epoxy resin may be included in the liquid epoxy resin composition as a flame retardant imparting agent. Such halogenated epoxy resins include those having two or more epoxy groups in one molecule and containing halogen atoms such as bromine and chlorine, i.e., brominated products of bisphenol-type epoxy resin and novolac-type epoxy resin. etc., preferably with a bromine content of 2
0% by weight or more of brominated bisphenol type epoxy resin,
A brominated novolac type epoxy resin, more preferably a brominated bisphenol type epoxy resin having a bromine content of 40% by weight or more. Specific examples of such halogenated epoxy resins include AER-735 (bromine content: 48
．． 1frffi%, epoxy per f1350. Softening point: Soft at room temperature, bisphenol type, manufactured by Asahi Kasei Corporation), AER
-745 (bromine content 48.5% by weight, epoxy equivalent 4
02. Softening point 71℃, bisphenol type, Asahi Kasei ■
manufactured by).
ＡＥＲ−７５５（臭素含有量４８．５重量％、エポキシ
当ｊ１４５９．軟化点８１℃、ビスフェノール型。AER-755 (bromine content 48.5% by weight, epoxy content J1459, softening point 81°C, bisphenol type.
旭化成工業■製）、ＡＥＲ−７６５（臭素含有量４９．
８ｆＺ量％、エポキシ当量６０２．軟化点１０１℃、ビ
スフェノール型、旭化成工業■製）ＢＲＥＮ （臭素含
有ｊ１３５〜３７１ｉ量％、エポキシ当１１２７０〜３
００．融点８０〜９０℃、フェノールノボラック型１日
本化薬■製）、ＢＲＥＮ−５（臭素含有量３５．８ｆｆ
ｉ量％、エポキシ当量２８９、軟化点８８℃、フェノー
ルノボラック型。manufactured by Asahi Kasei Corporation), AER-765 (bromine content 49.
8fZ amount%, epoxy equivalent 602. Softening point: 101°C, bisphenol type, manufactured by Asahi Kasei Corporation)
00. Melting point 80-90℃, phenol novolak type 1 manufactured by Nippon Kayaku ■, BREN-5 (bromine content 35.8ff
i amount%, epoxy equivalent: 289, softening point: 88°C, phenol novolac type.
日本化薬■製）、Ｂｒ化ＥＰＰＮ５００ （臭素含有ｍ
４３．７！Ｉｊ１％、エポキシ当量２８５．軟化点９３
．２℃１日本化薬■製）、エピコートＹＬ−６０８４（
臭素含有ｊ１４２．９重量％、エポキシ当量５０９、軟
化点１００℃、油化シェルエポキシ■製）、ＡＥＲ−７
１１（臭素含有量２０重量％。manufactured by Nippon Kayaku ■), Brized EPPN500 (bromine-containing m
43.7! Ij 1%, epoxy equivalent 285. Softening point 93
．． 2℃1 Nippon Kayaku ■), Epicote YL-6084 (
Bromine content: 142.9% by weight, epoxy equivalent: 509, softening point: 100°C, manufactured by Yuka Shell Epoxy ■), AER-7
11 (bromine content 20% by weight.
エポキシ当量４４５〜５２０．軟化点６８〜８０℃、ビ
スフェノール型、旭化成工業仲製）ＡＥＲ−，７１４（
臭素含有ｊ１２Ｇ重量％、エポキシ当ｆｆ１６００〜８
００．軟化点８５〜１００”Ｃ。Epoxy equivalent: 445-520. Softening point: 68-80°C, bisphenol type, manufactured by Asahi Kasei Kogyo) AER-, 714 (
Bromine content j12G wt%, epoxy ff1600~8
00. Softening point 85-100"C.
ビスフェノール型、旭化成工業仲製）、エビクロン１５
２（臭素含有ｊ１４４〜４８重瓜％、エポキシ当量３４
０〜３８０．融点５５〜５６℃、大日本インキ化学■製
）、エビクロン１１２０（臭素含有量１８〜２２Ｉｌ量
％、エポキシ当ｊ１４６０〜５１０、融点７０〜８０℃
、大日本インキ化学■製）、エビクロン１６０（臭素含
有量４７〜５１重量％、エポキシ当ｆｆ１４４０〜５０
ｏ、軟化点７７〜８７℃、大日本インキ化学■製）、エ
ビクロン１６５（臭素含１！Ｌｊ１４ｇ〜５２重量％、
エポキシ当１１６４０〜６９０．軟化点９６〜１０４℃
。Bisphenol type, Asahi Kasei Kogyo Nakako), Evicron 15
2 (Bromine content: 144-48%, epoxy equivalent: 34
0-380. Melting point: 55-56°C, manufactured by Dainippon Ink Chemical ■), Ebicuron 1120 (bromine content: 18-22Il%, epoxy weight: 1460-510, melting point: 70-80°C)
, manufactured by Dainippon Ink Chemical ■), Ebikuron 160 (bromine content 47-51% by weight, epoxy ff1440-50)
o, softening point 77-87°C, manufactured by Dainippon Ink Chemical ■), Ebikuron 165 (bromine content 1! Lj 14g-52% by weight,
Epoxy 11640-690. Softening point 96-104℃
.
大日本インキ化学■製）等が挙げられる。(manufactured by Dainippon Ink Chemical ■), etc.
本発明の液状エポキシ樹脂組成物には、さらに必要に応
じて上述したような成分の他に、シランカップリング剤
等の表面処理剤、カーボン、染料等の着色剤、アンチモ
ン、リン等の難燃助剤、界面活性剤等を配合せしめるこ
ともできる。In addition to the above-mentioned components, the liquid epoxy resin composition of the present invention may optionally contain surface treatment agents such as silane coupling agents, coloring agents such as carbon and dyes, and flame retardants such as antimony and phosphorus. Auxiliary agents, surfactants, etc. may also be added.
また本発明の樹脂封止型半導体装置は、上記液状エポキ
シ樹脂組成物を用いて半導体素子を封止することにより
製造される。このような本発明の樹脂封止型半導体装置
では、上述したように構成することにより、耐熱衝撃性
、高温電気特性、耐湿性の向上が達成される。Moreover, the resin-sealed semiconductor device of the present invention is manufactured by sealing a semiconductor element using the liquid epoxy resin composition. By configuring the resin-sealed semiconductor device of the present invention as described above, improvements in thermal shock resistance, high-temperature electrical characteristics, and moisture resistance can be achieved.
（実施Ｎ） 以下に、本発明を実施例により詳細に説明する。(Implementation N) The present invention will be explained in detail below using examples.
まず、第１表に示す組成の各成分を配合し、実施例及び
比較例に係る液状エポキシ樹脂組成物を製造した。すな
わち、まず有機溶剤を除いた各成分を、万能混合器やｑ
−ルなどの混合器により均一に混合した後、混合物を有
機溶剤に溶解して上述した液状エポキシ樹脂組成物を得
た。ただし、本発明の液状エポキシ樹脂組成物の構成成
分中、一般式（１）で表されるエポキシ樹脂としては、
ＥＳＸ−２２１（住友化学製、軟化点り５℃、エポキン
当Ｑ２２０） 、フェノール樹脂としては、ＸＬ−２２
５Ｌ （三井東圧化学製、フェノールアラルキル樹脂、
軟化点８４℃、水酸基当量１８０）及びＢＲＧ−５５６
（昭和高分子製、フェノールノボラック樹脂、水酸基当
ｊｌｌ ０４） 、有機溶剤としては、酢酸セロソルブ
、トルエン及びＭＥＫ（メチルエチルケトン）をそれぞ
れ用い、また比較例ではエポキシ樹脂として、クレゾー
ルノボラック型エポキシ樹脂ＥＳＣＮ−１９５（住友化
学製、エポキシ当量１９５）を使用した。また上記液状
エポキシ樹脂組成物では、上述したような構成成分の他
に、ハロゲン化エポキシ樹脂ＡＥＲ−７５５Ｔ（旭化成
工業製、臭素含有ｆｉ４８．５重量％、エポキシ当ｊ１
４６０） 、 シランカップリング剤（ＵＣＣ社製Ａ
−ＩＪ７）、シリカ充填剤（東芝セラミック製、５Ｇ−
Ａ）、カーボンブラック（三菱化成製、ＣＢ−３０）、
イミダゾール系硬化促進剤（四国化成！１１２ Ｅ
４ ＭＺ）を併用した。First, each component of the composition shown in Table 1 was blended to produce liquid epoxy resin compositions according to Examples and Comparative Examples. That is, first, mix each component except for the organic solvent in a universal mixer or
After uniformly mixing the mixture using a mixer such as a mold, the mixture was dissolved in an organic solvent to obtain the above-mentioned liquid epoxy resin composition. However, among the constituent components of the liquid epoxy resin composition of the present invention, the epoxy resin represented by general formula (1) is as follows:
ESX-221 (manufactured by Sumitomo Chemical, softening point 5°C, Epokin Q220), XL-22 as a phenolic resin
5L (manufactured by Mitsui Toatsu Chemical, phenol aralkyl resin,
Softening point: 84°C, hydroxyl equivalent: 180) and BRG-556
(Showa Kobunshi Co., Ltd., phenol novolak resin, hydroxyl group jll 04), cellosolve acetate, toluene and MEK (methyl ethyl ketone) were used as organic solvents, and in a comparative example, cresol novolac type epoxy resin ESCN-195 was used as an epoxy resin. (manufactured by Sumitomo Chemical, epoxy equivalent: 195) was used. In addition to the above-mentioned constituent components, the liquid epoxy resin composition also contains halogenated epoxy resin AER-755T (manufactured by Asahi Kasei Corporation, bromine content 48.5% by weight, epoxy per J1
460), silane coupling agent (UCC A)
-IJ7), silica filler (manufactured by Toshiba Ceramic, 5G-
A), carbon black (Mitsubishi Kasei, CB-30),
Imidazole curing accelerator (Shikoku Kasei! 112 E
4 MZ) was used in combination.
次いで得られた液状エポキシ樹脂組成物について、高温
電気特性、耐熱衝撃性及び耐湿性の評価試験を以下に示
すような方法により行なった。Next, the resulting liquid epoxy resin composition was evaluated for high temperature electrical properties, thermal shock resistance, and moisture resistance using the methods described below.
まず高温電気特性については、前記液状エポキシ樹脂組
成物をＡＪ製製板板上膜厚が約゛ｏ、２龍となるように
均一に塗布した後、８０’ＣＸ３Ｇ分。First, regarding high-temperature electrical properties, the liquid epoxy resin composition was uniformly coated on a board manufactured by AJ so that the film thickness was approximately 20 mm, and then 80'CX3G was applied.
１２０℃Ｘ３０分、１５０”ＣＸ２時間の硬化条件によ
り硬化して試験片を作成し、ＪＩＳＫ６９１１に準拠し
て１５０℃における体積抵抗率を測定した。A test piece was prepared by curing under the curing conditions of 120°C for 30 minutes and 150"C for 2 hours, and the volume resistivity at 150°C was measured in accordance with JIS K6911.
また耐熱衝撃性については、まず１２ｍｍ口の評価試験
用ＴＡＢ素子に、デイスペンサーにより液状エポキシ樹
脂組成物をポツティングし、次いで８０＠ＣＸ ３０分
、１２ｏ″ｃｘ３６分、１５０”Ｃｘ２時間の条件で硬
化してサンプルを作成した。第１図に、このようなサン
プルの縦断面図を模式的に示す。第１図に示されるよう
に、評価試験用ＴＡＢ素子はポリイミドフィルム基板（
１）上に形成されたＣｕリード！Ｉ（２）に半導体素子
（３）の電極パッドがバンブ（４）を介してボンディン
グされており、液状エポキシ樹脂組成物（５）は、半導
体素子（３）とポリイミドフィルム基板（１）との接続
部にのみ塗布した。この後、得られたサンプル２４個を
一６５℃、３０分／室温、５分／１５０’、３０９，４
温、５分を１サイクルとする冷熱サイクルにさらして、
所定サイクル終了毎にＴＡＢ素子の不良発生数を調べた
。Regarding thermal shock resistance, first, a liquid epoxy resin composition was potted into a 12 mm opening TAB element for evaluation test using a dispenser, and then cured under the conditions of 80@CX 30 minutes, 12o''CX 36 minutes, 150''CX 2 hours. I created a sample. FIG. 1 schematically shows a longitudinal cross-sectional view of such a sample. As shown in Fig. 1, the TAB element for evaluation test was made of polyimide film substrate (
1) Cu lead formed on top! The electrode pad of the semiconductor element (3) is bonded to the I (2) via the bump (4), and the liquid epoxy resin composition (5) is bonded to the semiconductor element (3) and the polyimide film substrate (1). Apply only to the connection area. After this, the 24 obtained samples were heated at -65°C, 30 minutes/room temperature, 5 minutes/150', 309,4
Expose to hot and cold cycles with one cycle of 5 minutes,
The number of defects occurring in TAB elements was checked every time a predetermined cycle was completed.
さらに耐湿性については、上述したような耐熱衝撃性試
験と同様、評価試験用ＴＡＢ素子に液状エポキシ樹脂組
成物をボッティングしてサンプルを作成した後、サンプ
ル２４個を８５℃、８５％ＲＨの高温高湿槽中に所定時
間放置した時の不良発生数で評価した。Furthermore, regarding moisture resistance, similar to the thermal shock resistance test described above, samples were prepared by bottling a liquid epoxy resin composition onto the TAB element for evaluation testing, and then 24 samples were heated at 85°C and 85% RH. The evaluation was based on the number of defects that occurred when the product was left in a high-temperature, high-humidity tank for a predetermined period of time.
上述したような高温電気特性、耐熱衝撃性及び耐湿性の
評価試験の結果を第２表に示す。第２表から明らかなよ
うに、一般式（１）で表されるエポキシ樹脂を用いた裏
施例１〜４では、いずれの試験においても比較例と比べ
て良好な結果が得られている。またさらに、硬化剤とし
てフェノールアラルキル樹脂を用いた実施例２〜４では
、硬化剤としてフェノールノボラック樹脂を用いた実施
例１よりも、優れた耐熱衝撃性が得られたことが確認さ
れた。Table 2 shows the results of the evaluation tests for high-temperature electrical properties, thermal shock resistance, and moisture resistance as described above. As is clear from Table 2, in the back Examples 1 to 4 using the epoxy resin represented by the general formula (1), better results were obtained in all tests than in the comparative examples. Furthermore, it was confirmed that Examples 2 to 4 in which a phenol aralkyl resin was used as a curing agent had better thermal shock resistance than in Example 1 in which a phenol novolak resin was used as a curing agent.
Ｃ発明の効果］
以上詳述したように、本発明の液状エポキシ樹脂組成物
は、係る液状エポキシ樹脂組成物によって封止された樹
脂封止型半導体装置に優れた耐熱衝撃性、高温電気特性
及び耐湿性を付与せしめることができる。而して係る液
状エポキシ樹脂組成物を用いれば、小型かつ薄型で、し
かも信頼性の高い樹脂封止型半導体装置を実現すること
ができ、その工業的な価値は大なるものがある。C Effects of the Invention] As detailed above, the liquid epoxy resin composition of the present invention provides excellent thermal shock resistance, high-temperature electrical properties, and Moisture resistance can be imparted. By using such a liquid epoxy resin composition, it is possible to realize a resin-sealed semiconductor device that is small, thin, and highly reliable, and has great industrial value.
第１図は、本発明の液状エポキシ樹脂組成物によって封
止された評価試験用ＴＡＢ素子を模式的に示す縦断面図
である。
１・・・ポリイミドフィールム基板。
２・・・Ｃｕリード線。
３・・・半導体素子、４・・・バンブ。
５・・・液状エポキシ樹脂組成物FIG. 1 is a vertical cross-sectional view schematically showing a TAB element for evaluation testing sealed with the liquid epoxy resin composition of the present invention. 1...Polyimide film substrate. 2...Cu lead wire. 3... Semiconductor element, 4... Bump. 5...Liquid epoxy resin composition
Claims (3)
数１〜２０のアルキル基を表し、ｎは０又は正の整数を
示す。） で表されるエポキシ樹脂と、 （ｂ）硬化剤としてのフェノール樹脂と、 （ｃ）有機溶剤 とを含有することを特徴とする液状エポキシ樹脂組成物
。(1) (a) General formula (I) below ▲Mathematical formulas, chemical formulas, tables, etc.▼(I) (However, R_1 and R_2 each represent a hydrogen atom or an alkyl group having 1 to 20 carbon atoms, and n is 0. or a positive integer); (b) a phenol resin as a curing agent; and (c) an organic solvent.
ルキル樹脂であることを特徴とする請求項１記載の液状
エポキシ樹脂組成物。(2) The liquid epoxy resin composition according to claim 1, wherein the phenol resin as the curing agent is a phenol aralkyl resin.
よって半導体素子が封止されてなることを特徴とする樹
脂封止型半導体装置。(3) A resin-sealed semiconductor device, characterized in that a semiconductor element is sealed with the liquid epoxy resin composition according to claim 1 or 2.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18421090A JP3103365B2 (en) | 1990-07-13 | 1990-07-13 | Liquid epoxy resin composition and resin-encapsulated semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18421090A JP3103365B2 (en) | 1990-07-13 | 1990-07-13 | Liquid epoxy resin composition and resin-encapsulated semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0477518A true JPH0477518A (en) | 1992-03-11 |
| JP3103365B2 JP3103365B2 (en) | 2000-10-30 |
Family
ID=16149292
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18421090A Expired - Lifetime JP3103365B2 (en) | 1990-07-13 | 1990-07-13 | Liquid epoxy resin composition and resin-encapsulated semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3103365B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| USRE37120E1 (en) * | 1994-07-23 | 2001-04-03 | Yoshitaka Aoyama | Parts send-out control device for vibratory parts feeder |
| US7405748B2 (en) | 2003-02-24 | 2008-07-29 | Leader Electronics Corporation | Video signal monitoring apparatus |
-
1990
- 1990-07-13 JP JP18421090A patent/JP3103365B2/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| USRE37120E1 (en) * | 1994-07-23 | 2001-04-03 | Yoshitaka Aoyama | Parts send-out control device for vibratory parts feeder |
| US7405748B2 (en) | 2003-02-24 | 2008-07-29 | Leader Electronics Corporation | Video signal monitoring apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3103365B2 (en) | 2000-10-30 |
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