JPH0473872B2 - - Google Patents
Info
- Publication number
- JPH0473872B2 JPH0473872B2 JP16876784A JP16876784A JPH0473872B2 JP H0473872 B2 JPH0473872 B2 JP H0473872B2 JP 16876784 A JP16876784 A JP 16876784A JP 16876784 A JP16876784 A JP 16876784A JP H0473872 B2 JPH0473872 B2 JP H0473872B2
- Authority
- JP
- Japan
- Prior art keywords
- resist
- plasma
- workpiece
- ions
- discharge chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000034 method Methods 0.000 claims description 14
- 150000002500 ions Chemical class 0.000 claims description 8
- 239000007789 gas Substances 0.000 claims description 6
- 239000002344 surface layer Substances 0.000 claims description 6
- 238000005468 ion implantation Methods 0.000 claims description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 4
- 239000001301 oxygen Substances 0.000 claims description 4
- 229910052760 oxygen Inorganic materials 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- QLOAVXSYZAJECW-UHFFFAOYSA-N methane;molecular fluorine Chemical compound C.FF QLOAVXSYZAJECW-UHFFFAOYSA-N 0.000 claims description 3
- 238000009832 plasma treatment Methods 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/427—Stripping or agents therefor using plasma means only
Description
【発明の詳細な説明】
技術分野
本発明はイオン注入した被加工物から、マスク
に使用したレジストを剥離する方法に関する。DETAILED DESCRIPTION OF THE INVENTION Technical Field The present invention relates to a method for stripping a resist used as a mask from a workpiece into which ions have been implanted.
従来技術
レジストをマスクとしてイオン注入したウエハ
またはチツプから、レジストを除去するには、湿
式または乾式による方法が行なわれている。湿式
法は、使用する薬品によつて取扱いが危険であ
り、コストも高いばかりでなく、イオン注入量が
大きい場合には全く剥離しないので、使用するこ
とができない。乾式法には、通常のプラズマによ
よる方法、およびいわゆるアフタグロー放電、す
なわち直接プラズマに触れず、プラズマによりで
きた活性種を利用する方法がある。Prior Art To remove resist from a wafer or chip into which ions have been implanted using a resist as a mask, wet or dry methods are used. The wet method cannot be used because it is dangerous to handle depending on the chemicals used, is expensive, and does not peel off at all when the amount of ions implanted is large. Dry methods include methods using normal plasma and so-called afterglow discharge, that is, methods that utilize active species generated by plasma without direct contact with plasma.
通常のプラズマでは被加工物が300℃程度に加
熱され、レジストが焦付く欠点があるが、アフタ
ーグローでは室温から70℃付近と低温度で処理で
きる利点を有する。しかしイオン注入などによつ
て変質した表面層を除去することができない。 With normal plasma, the workpiece is heated to about 300 degrees Celsius, which has the disadvantage of burning the resist, but afterglow has the advantage of being able to process at temperatures as low as room temperature to around 70 degrees Celsius. However, the surface layer altered by ion implantation or the like cannot be removed.
問題点
イオン注入した被加工物上のレジストを、活性
種によつて処理する場合、イオン注入等によつて
変質したレジスト表面層の除去に格別の処理を必
要とする。Problems When a resist on a workpiece into which ions have been implanted is treated with active species, a special treatment is required to remove the surface layer of the resist that has been altered by the ion implantation or the like.
解決手段
上記問題点は、レジストをマスクとしてイオン
注入した被加工物から、イオン注入によつて変質
した表面層を含むレジストを剥離する方法であつ
て、被加工物と反応しないガスのプラズマを、被
加工物上のレジストが少なくとも残留する程度に
接触時間を制御して作用させ、レジストの一部を
除去した後、ふつ素化炭素系ガスを含む酸素のプ
ラズマを金属網に通してプラズマより活性種を取
り出し、この活性種で、さきのプラズマ処理にお
いて残留したレジストを除去するレジスト剥離方
法によつて解決することができる。Solution The above problem is solved by a method of stripping the resist including the surface layer altered by ion implantation from the workpiece into which ions have been implanted using the resist as a mask. The contact time is controlled to such an extent that at least the resist remains on the workpiece, and after removing a portion of the resist, an oxygen plasma containing fluorinated carbon gas is passed through a metal mesh to make the plasma more active. This problem can be solved by a resist stripping method in which the seeds are extracted and the active seeds are used to remove the resist remaining in the previous plasma treatment.
実施例
シリコンウエハにポジレジスト（東京応化製、
商品名FPR800）を塗布し、これをパターニング
してマスクとし、Ｐイオンを100keVで加速して
ウエハに注入し、１×1015個／cm2とした。レジス
トな表面は深さ数百Åが変質した。Example: Positive resist (manufactured by Tokyo Ohka Co., Ltd.,
FPR800 (trade name) was coated, patterned and used as a mask, and P ions were accelerated at 100 keV and implanted into the wafer at a density of 1×10 15 ions/cm 2 . The resist surface was altered to a depth of several hundred angstroms.
このレジスト表面が変質したウエハを
0.05Torrのアルゴンプラズマにさらし、被加工
物上のレジストが少なくとも残留する程度の時間
作用させた。このときの接触時間は10秒であつ
た。この程度の処理ではレジストが焦付くことも
なく、他方表面層は、除去されるか、または次の
アフタグロー放電室において活性種に変つたプラ
ズマによるアツシングを容易にすることができ
る。なお、プラズマはアルゴンの代わりに酸素を
使用することもできる。 Wafers with altered resist surfaces
It was exposed to argon plasma at 0.05 Torr and allowed to act for a time that at least the resist on the workpiece remained. The contact time at this time was 10 seconds. This level of processing does not cause the resist to burn, while the surface layer can be removed or easily ashed by the plasma transformed into active species in the subsequent afterglow discharge chamber. Note that oxygen can also be used for plasma instead of argon.
第１図に略示するアフタグロー放電室１を有す
る装置、およびエツチングに使用するふつ素化炭
素系ガスを含む酸素のプラズマは公知の技術であ
る。 The apparatus having an afterglow discharge chamber 1, schematically shown in FIG. 1, and the plasma of oxygen containing fluorinated carbon gas used for etching are known techniques.
アフタグロー放電室１は、網目２mmのアルミニ
ウム網からなる複数の窓１を介してグロー放電室
３に連通し、このグロー放電室３は誘導体である
アルミナの壁４を介してマイクロ波発生室５に隣
接する。1.5TorrのO2−５％CF4混合ガスをグロ
ー放電室３に導入し、アフタグロー放電室１から
排出する。グロー放電室３内で混合ガスは、
1kWのマイクロ波で励起されてプラズマとなる。
プラズマはアルミニウム網窓２を通るときに電荷
をほとんど失なつた状態である活性種に変る。 The afterglow discharge chamber 1 communicates with a glow discharge chamber 3 through a plurality of windows 1 made of aluminum mesh with a mesh size of 2 mm, and this glow discharge chamber 3 communicates with a microwave generation chamber 5 through a wall 4 made of alumina, which is a dielectric. Adjacent. A mixed gas of 1.5 Torr of O 2 -5% CF 4 is introduced into the glow discharge chamber 3 and discharged from the afterglow discharge chamber 1 . The mixed gas in the glow discharge chamber 3 is
It is excited by a 1kW microwave and becomes plasma.
When the plasma passes through the aluminum screen window 2, it changes into active species that have lost most of their charge.
さきにプラズマ処理したレジストを有するウエ
ハ６をアフタグロー放電室１におき、この活性種
に30秒間接触させた。ウエハはこれによつてダメ
ジを受けず、またレジストが焦付くこともなく、
アツシングすることができた。 The wafer 6 having the resist that had been previously plasma-treated was placed in the afterglow discharge chamber 1 and brought into contact with the active species for 30 seconds. The wafer will not be damaged by this, and the resist will not burn.
I was able to do some ashing.
発明の効果
本発明のレジスト剥離方法は、まず被加工物と
反応しないガスのプラズマを、少なくとも被加工
物の表面にレジストが残留する程度に接触時間を
制御して作用させるので、通常のプラズマのよう
にレジストを焦付かせることがない。しかもイオ
ン注入によつて変質した表面層を有するレジスト
は、アフタグロー放電プラズマ、すなわち活性種
に変つたプラズマによつて容易にアツシングする
ことができる。Effects of the Invention In the resist stripping method of the present invention, the plasma of a gas that does not react with the workpiece is first applied by controlling the contact time to such an extent that at least the resist remains on the surface of the workpiece. It won't burn the resist like that. Moreover, a resist having a surface layer altered by ion implantation can be easily ashed by afterglow discharge plasma, that is, plasma transformed into active species.
第１図は本発明の方法で使用するアフタグロー
放電装置の略図である。
１……アフタグロー放電室、２……金属網の
窓、３……グロー放電室、４……誘電体の壁、５
……マイクロ波発生室、６……ウエハ。
FIG. 1 is a schematic diagram of an afterglow discharge device used in the method of the invention. 1... Afterglow discharge chamber, 2... Metal mesh window, 3... Glow discharge chamber, 4... Dielectric wall, 5
...Microwave generation chamber, 6...Wafer.
Claims (1)
工物から、イオン注入によつて変質した表面層を
含むレジストを剥離する方法であつて、被加工物
と反応しないガスのプラズマを、長くとも被加工
物上のレジストが残留する程度に接触時間を制御
して作用させ、レジストの一部を除去した後、ふ
つ素化炭素系ガスを含む酸素のプラズマから金属
網に通して活性種を取り出し、この活性種で、さ
きのプラズマ処理において残留したレジストを除
去することを特徴とするレジスト剥離方法。1 A method of stripping the resist, including the surface layer altered by ion implantation, from a workpiece into which ions have been implanted using the resist as a mask. After removing a portion of the resist by controlling the contact time to such an extent that the resist remains, active species are removed from the oxygen plasma containing fluorinated carbon gas through a metal mesh. A resist stripping method characterized in that the resist remaining in the previous plasma treatment is removed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16876784A JPS6146951A (en) | 1984-08-14 | 1984-08-14 | Resist peeling method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16876784A JPS6146951A (en) | 1984-08-14 | 1984-08-14 | Resist peeling method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6146951A JPS6146951A (en) | 1986-03-07 |
| JPH0473872B2 true JPH0473872B2 (en) | 1992-11-24 |
Family
ID=15874070
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16876784A Granted JPS6146951A (en) | 1984-08-14 | 1984-08-14 | Resist peeling method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6146951A (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0777211B2 (en) * | 1987-08-19 | 1995-08-16 | 富士通株式会社 | Ashing method |
| US5310703A (en) * | 1987-12-01 | 1994-05-10 | U.S. Philips Corporation | Method of manufacturing a semiconductor device, in which photoresist on a silicon oxide layer on a semiconductor substrate is stripped using an oxygen plasma afterglow and a biased substrate |
| CN107464750B (en) * | 2017-08-23 | 2019-12-13 | 成都海威华芯科技有限公司 | Process method for removing photoresist basement membrane |
-
1984
- 1984-08-14 JP JP16876784A patent/JPS6146951A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6146951A (en) | 1986-03-07 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |