JPS61160939A - Method of dry removal of si surface damage after dry etching - Google Patents
Method of dry removal of si surface damage after dry etchingInfo
- Publication number
- JPS61160939A JPS61160939A JP163585A JP163585A JPS61160939A JP S61160939 A JPS61160939 A JP S61160939A JP 163585 A JP163585 A JP 163585A JP 163585 A JP163585 A JP 163585A JP S61160939 A JPS61160939 A JP S61160939A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- irradiation
- etching
- atoms
- ion beam
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 31
- 238000001312 dry etching Methods 0.000 title claims abstract description 14
- 239000007789 gas Substances 0.000 claims abstract description 22
- 238000005530 etching Methods 0.000 claims abstract description 17
- 238000010884 ion-beam technique Methods 0.000 claims abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 150000001721 carbon Chemical class 0.000 claims abstract description 10
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 claims abstract description 8
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910001882 dioxygen Inorganic materials 0.000 claims abstract description 8
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims abstract description 7
- 239000011737 fluorine Substances 0.000 claims abstract description 7
- 229910052731 fluorine Inorganic materials 0.000 claims abstract description 7
- 238000010438 heat treatment Methods 0.000 abstract description 11
- 125000004432 carbon atom Chemical group C* 0.000 abstract description 7
- 239000002344 surface layer Substances 0.000 abstract description 7
- 239000010410 layer Substances 0.000 abstract description 5
- 230000001133 acceleration Effects 0.000 abstract description 4
- 125000001309 chloro group Chemical group Cl* 0.000 abstract description 3
- 125000001153 fluoro group Chemical group F* 0.000 abstract description 3
- 125000004430 oxygen atom Chemical group O* 0.000 abstract description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052760 oxygen Inorganic materials 0.000 abstract description 2
- 239000001301 oxygen Substances 0.000 abstract description 2
- 238000007796 conventional method Methods 0.000 description 11
- 239000012535 impurity Substances 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- 229910052799 carbon Inorganic materials 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 3
- 125000004429 atom Chemical group 0.000 description 3
- 229910052801 chlorine Inorganic materials 0.000 description 3
- 239000000460 chlorine Substances 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 125000005843 halogen group Chemical group 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- XUKUURHRXDUEBC-SXOMAYOGSA-N (3s,5r)-7-[2-(4-fluorophenyl)-3-phenyl-4-(phenylcarbamoyl)-5-propan-2-ylpyrrol-1-yl]-3,5-dihydroxyheptanoic acid Chemical compound C=1C=CC=CC=1C1=C(C=2C=CC(F)=CC=2)N(CC[C@@H](O)C[C@H](O)CC(O)=O)C(C(C)C)=C1C(=O)NC1=CC=CC=C1 XUKUURHRXDUEBC-SXOMAYOGSA-N 0.000 description 1
- 238000000026 X-ray photoelectron spectrum Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000003795 desorption Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は電子デバイス製造プロセスに用いる、Ｓｉのド
ライエツチング損傷除去方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION (Industrial Application Field) The present invention relates to a method for removing Si dry etching damage used in an electronic device manufacturing process.
（従来技術とその問題点）
従来のハロゲン化炭素系ガスによるドライエツチング後
のＳｉ表面の損傷除去方法としては、Ｓｉ表面を９５０
℃、Ｈ２： ０！ ＝１ ： １で２００Ｘ程度熱酸化
し、その後希釈したフッ酸で酸化膜を除去する、などの
方法が行われている。（井用英治他、第３０回応用物理
学関係連合講演会講演予稿集ｐ ３１０．６ ａ −Ｖ
−１０）。しかしながらこのような方法においては、ド
ライエツチングによる損傷は除去できるものの、Ｓｊ基
板を高温に加熱する方法であるために、基板に注入した
不純物のプロファイルが変化して設計通シの不純物分布
が得られない。高温加熱によって新九に結晶欠陥が発生
する可能性がある、などの欠点があった。(Prior art and its problems) As a conventional method for removing damage from the Si surface after dry etching with a halogenated carbon gas, the Si surface is
℃, H2: 0! A method has been used in which the oxide film is thermally oxidized at about 200X with =1:1 and then the oxide film is removed with diluted hydrofluoric acid. (Eiji Iyo et al., Proceedings of the 30th Applied Physics Association Conference, p 310.6 a-V
-10). However, although this method can remove damage caused by dry etching, since the SJ substrate is heated to a high temperature, the profile of the impurities implanted into the substrate changes and the impurity distribution consistent with the design cannot be obtained. do not have. Shinku had drawbacks such as the possibility of crystal defects occurring due to high-temperature heating.
第１図はハロゲン化炭素ガスによるドライエツチング後
のＳｉ表面に対し損傷除去処理を施した後のＳｉの注入
不純物のプロファイルをＳＩＭＳによって測定した結果
を示したものである。１１は損傷除去処理を施す前のＢ
の分布を示すプロファイル、１２は従来方法による損傷
除去処理を施した後のＢの分布を示すプロファイルで、
従来方法による損傷除去処理によってＢの分布が変化し
てしまっていることがわかる。これは、従来方法が高温
加熱を伴うプロセスであるためである。また、従来法で
は酸化膜除去の際に希釈７ツ酸に浸すという湿式の方法
を取っているため、プロセスの総乾式化を妨げるもので
あった。FIG. 1 shows the results of measurement by SIMS of the profile of implanted impurities in Si after damage removal treatment was performed on the Si surface after dry etching with halogenated carbon gas. 11 is B before damage removal treatment
12 is a profile showing the distribution of B after damage removal processing by the conventional method,
It can be seen that the distribution of B has changed due to the damage removal process using the conventional method. This is because the conventional method involves high temperature heating. In addition, the conventional method uses a wet method of immersing the material in diluted diluted acid when removing the oxide film, which prevents the process from becoming completely dry.
（発明の目的）
本発明は、このような従来の欠点を除去せしめて、ハロ
ゲン化炭素系ガスによるドライエツチング後Ｓｉの損傷
除去において、低温のプロセスでかつ十分な損傷除去効
果のある損傷除去を乾式で行う方法を提供することを目
的とする。(Object of the Invention) The present invention eliminates such conventional drawbacks and provides damage removal that is a low temperature process and has sufficient damage removal effect in removing damage from Si after dry etching with a halogenated carbon gas. The purpose is to provide a dry method.
（発明の構成）
本発明では、ハロゲン化炭素系ガスによるドライエツチ
ング後のＳｉ基板に、塩素ガス雰囲気中またはフッ素ガ
ス雰囲気中でイオンビーム・エツチングを施す。次に同
８４基板を酸素ガス雰囲気中で、加熱、またはＵＶ光照
射、またはＩＲ光照射、または加熱・ＵＶ光照射・ＩＲ
光照射のうち２つ以上を同時に行う。この方法によシ、
ドライエツチングによるＳｉ表面の損傷を除去すること
ができる。(Structure of the Invention) In the present invention, a Si substrate that has been dry etched with a halogenated carbon gas is subjected to ion beam etching in a chlorine gas atmosphere or a fluorine gas atmosphere. Next, the same 84 substrate is heated, UV light irradiated, or IR light irradiated in an oxygen gas atmosphere, or heated, UV light irradiated, and IR light irradiated.
Two or more of the light irradiations are performed simultaneously. By this method,
Damage to the Si surface caused by dry etching can be removed.
（構成の詳細な説明）
本発明は、上述の方法を取ることによシ、従来技術の問
題点を解決した。本発明では、まずハロゲン化炭素系ガ
スでドライエツチングした後の試料をイオンビームエツ
チング装置内に設置し、ＩＸ １０−” Ｔｏｒｒ 〜
Ｉ Ｘ １０−’ Ｔｏｒｒの塩素ガス雰囲気中または
フッ素ガス中で加速電圧０． Ｉ Ｋ Ｖ〜１ｋｖＳｉ
ｉｔ流密度０．０１ ｍＡ ／ ｃｄ 〜１０ ｍＡ
／ ｔｙｌ（のＡｒ＋イオンビームを照射してイオンビ
ームエツチングを施す。ハロゲン化炭素系ガスでドライ
エツチングするとＳｉ表面には表面層内に多くの炭素原
子が浅くたたき込まれる。このＳｉ表面層の炭素原子は
Ｓｉ表面損傷の原因となるため取り除く必要があり、本
発明では上述の０６雰囲気中またはＦ。(Detailed Description of Configuration) The present invention solves the problems of the prior art by taking the above-described method. In the present invention, first, a sample that has been dry etched with a halogenated carbon gas is placed in an ion beam etching apparatus, and the sample is heated at IX 10-" Torr ~
The accelerating voltage is 0. IKV~1kvSi
It current density 0.01 mA/cd~10 mA
Ion beam etching is performed by irradiating an Ar + ion beam of / tyl (.Dry etching with a halogenated carbon gas causes many carbon atoms to be shallowly implanted into the surface layer of the Si surface.The carbon in this Si surface layer Atoms must be removed because they cause damage to the Si surface, and in the present invention, atoms are removed in the above-mentioned 06 atmosphere or F.
雰囲気中のイオンビームエツチング過程でＳｉ表面の炭
素原子を含む層を取り除いている。The layer containing carbon atoms on the Si surface is removed by an ion beam etching process in an atmosphere.
次にＩ Ｘ １０−” Ｔｏｒｒ 〜１００ Ｔｏｒｒ
の酸素ガス雰囲気中で別基板を１００℃〜５００℃に加
熱、または試料にＵＶ光を照射、またはＩＲ光を照射、
または加熱・ＵＶ光照射・ＩＲ光照射のうち２つ以上を
同時に行う。上述の塩素ガス雰囲気またはフッ素ガス雰
囲気中のイオンビームエツチングの過程でＳｉ表面には
塩素原子またはフッ素原子が吸着しておシ、このままで
はＳｉ表面損傷の原因となるが、これらめ）・ロゲン原
子は酸素ガス中の試料加熱、ＵＶ光照射、ＩＩＬ光照射
によって酸素原子に置換され、Ｓｉ表面のハロゲン化し
た層は薄い酸化層に変わる。加熱及びＩＲ光照射はＳｉ
表面温度を上昇させるため、ＵＶ光照射はハロゲン原子
のＵＶ光吸収によってその脱離を促進させるためのもの
である。この酸化後のＳｉ表面層内にも塩素原子または
フッ素原子が多少残留しているが、Ｓｉ表面損傷の原因
となるほどではない。Then I X 10-” Torr ~100 Torr
Heating another substrate to 100°C to 500°C in an oxygen gas atmosphere, or irradiating the sample with UV light or IR light,
Alternatively, two or more of heating, UV light irradiation, and IR light irradiation are performed simultaneously. In the process of ion beam etching in the above-mentioned chlorine gas atmosphere or fluorine gas atmosphere, chlorine atoms or fluorine atoms are adsorbed on the Si surface, which causes damage to the Si surface if left as is. is replaced by oxygen atoms by heating the sample in oxygen gas, UV light irradiation, and IIL light irradiation, and the halogenated layer on the Si surface turns into a thin oxide layer. Heating and IR light irradiation are performed on Si
In order to increase the surface temperature, the UV light irradiation is for promoting the desorption of halogen atoms through UV light absorption. Although some chlorine atoms or fluorine atoms remain in the Si surface layer after this oxidation, they are not large enough to cause damage to the Si surface.
以上に述べた方法によシ、ハロゲン化炭素系ガス中のド
ライエツチング後のＳｉ表面から表面損傷の原因となる
炭素原子を低温のプロセスで取シ除き、またこのプロセ
ス中で吸着するハロゲン原子も低温のプロセスで減少さ
せることができ、ノ１０ゲン化炭素系ガス中のドライエ
ツチング後のＳｉ表面の低温プロセスによる損傷除去を
乾式で行うことが可能となる。By the method described above, carbon atoms that cause surface damage are removed from the Si surface after dry etching in a halogenated carbon-based gas in a low-temperature process, and halogen atoms adsorbed during this process are also removed. This can be reduced by a low-temperature process, and it becomes possible to dry-remove the damage caused by the low-temperature process on the Si surface after dry etching in a 10-carbon gas.
（実施例）
以下本発明の実施例について図面を参照して詳細に説明
する。第２図に本発明の実施例を示す。(Example) Examples of the present invention will be described in detail below with reference to the drawings. FIG. 2 shows an embodiment of the present invention.
まず、第２図（−のように、Ｓｉ基板２１が設置されて
いるチャンバー２２内にガス導入管２３から塩素ガスま
たはフッ素ガス２４を導入する。ガス分圧はパルプ２５
によってＩ Ｘ １０ Ｔｏｒｒ〜Ｉ Ｘ１０ Ｔ
ｏｒｒの適当な値に調節する。このＳｉ基板２１に対し
、イオン源２６から出たＡｒ＋イオンビーム２７を照射
する。イオン源２６から出すＡｒ＋イオンビーム２７は
、加速電圧０．１ｋＶ〜１ ｋＶ。First, as shown in FIG.
by I X 10 Torr ~ I X10 T
Adjust the orr to an appropriate value. This Si substrate 21 is irradiated with an Ar + ion beam 27 emitted from an ion source 26 . The Ar+ ion beam 27 emitted from the ion source 26 has an acceleration voltage of 0.1 kV to 1 kV.
電流密度０．０１ ｍＡ／ ａｉ〜１０ ｍＡ／ ａＡ
の適当な値に調整する。ガス流量及びイオン源の加速電
圧、電流密度の設定は、これらの条件とエツチング速度
との関係を示した第３図を参照して、）１０ゲン化炭素
系ガス中のドライエツチングで形成された炭素原子を含
むＳｉ表面層が、イオンビームエッチングで完全に除去
される条件を決めるものとする。Current density 0.01 mA/ai~10 mA/aA
Adjust to an appropriate value. For setting the gas flow rate, accelerating voltage of the ion source, and current density, refer to Figure 3, which shows the relationship between these conditions and the etching rate. The conditions under which the Si surface layer containing carbon atoms is completely removed by ion beam etching shall be determined.
第３図（ａ）はＡｒ十加速電圧１ ｋＶ 、 （ｂ）は
０．５ｋＶ。Figure 3 (a) shows Ar acceleration voltage 1 kV, (b) shows 0.5 kV.
（ｃ）は０．２ｋＶの場合のエツチング速度の電流密度
及び塩素分圧依存性を示したものである。例えば、ＣＦ
、、Ｈ，混合ガスでエツチングした後のＳｉ表面の場合
には厚さ約２つＯＫの炭素原子を含む表面層が形成され
ているため、塩素ガス分圧Ｉ Ｘ １０−’Ｔｏｒｒ中
で加速電圧１ ｋＬ電電流密度１五Ａｒ＋イオンビーム
で１０秒間のエツチングを行うことによシ、炭素原子を
含む表面層を除去することができる。フッ素ガスを用い
る場合には、エツチング速度は同じ分圧で塩素の約１．
５倍となる。(c) shows the dependence of etching rate on current density and chlorine partial pressure at 0.2 kV. For example, C.F.
,,H, In the case of the Si surface after etching with a mixed gas, a surface layer containing approximately two carbon atoms is formed, so that it is accelerated in a chlorine gas partial pressure of I x 10-'Torr. The surface layer containing carbon atoms can be removed by etching for 10 seconds with a voltage of 1 kL current density of 15 Ar + ion beam. When using fluorine gas, the etching rate is about 1.5 mm faster than that of chlorine at the same partial pressure.
It becomes 5 times.
次に、第２図（ｂ）のように、パルプ２５を閉じて塩素
ガスまたはフッ素ガスを止め、これをポンプ２８で排気
した後、ガス導入管２９から酸素ガス２１０を導入する
。酸素ガス分圧はパルプ２１１によってＩ Ｘ １ ０
’ｒｏｒｒ 〜１ ０ ０ Ｔｏｒｒ の適当な値に
調整する。Ｓｉ基板２工をヒーター２１２によりて１０
０℃〜５００℃に加熱し、噛合によってはＵＶ光透過窓
２１３を通してＵＶ光源２１４からＵＶ光２１５をＳｔ
基板２１に照射する。また、場合によってはＩＲ光透過
窓２１６を通してＩ几光源２１７からＩＲ光２１８をＳ
ｉ基板２１に照射する。加熱・ＵＶ光照射・ＩＲ光照射
のうち２つ以上を同時に行ってもよいことは言うまでも
ない。Next, as shown in FIG. 2(b), the pulp 25 is closed to stop the chlorine gas or fluorine gas, which is exhausted by the pump 28, and then oxygen gas 210 is introduced from the gas introduction pipe 29. Oxygen gas partial pressure is I X 10 by pulp 211
'rorr to an appropriate value of 100 Torr. Heater 212 heats 2 Si substrates for 10 minutes.
St.
The substrate 21 is irradiated. In some cases, the IR light 218 may be transmitted from the I-light source 217 through the IR light transmission window 216.
The i-substrate 21 is irradiated. It goes without saying that two or more of heating, UV light irradiation, and IR light irradiation may be performed simultaneously.
この酸素雰囲気中の加熱及びＵＶ光照射及びより光照射
によＦ） 、Ｓｉ表面に吸着してい九ノ・ロゲン原子の
多くが酸素原子に置換される。By this heating in an oxygen atmosphere, UV light irradiation, and further light irradiation, most of the nine-rogen atoms adsorbed on the Si surface are replaced with oxygen atoms.
（発明の効果）
第４図は、Ｓｉ基板表面のＸＰＳスペクトルのピーク強
度を示したものである。横軸には、処理前、従来の方法
による処理後、本発明の方法による処理後（塩素ガス雰
囲気中のイオンビームエツチングを用い、加熱時にはＵ
Ｖ光照射を併用した場合）を示している。４１はＣ４ピ
ーク面積のＳｉ１ｐビ一ク面積に対する比を示したもの
で、Ｓｉ表面の炭素量を示すＣ８ピークの大きさは処理
前に比べ、従来の方法による処理後、本発明の方法によ
る処理後ともに減少している。(Effects of the Invention) FIG. 4 shows the peak intensity of the XPS spectrum of the surface of the Si substrate. The horizontal axis shows before treatment, after treatment by the conventional method, and after treatment by the method of the present invention (ion beam etching in a chlorine gas atmosphere, U during heating).
(when V-light irradiation is used in combination). 41 shows the ratio of the C4 peak area to the Si1p peak area, and the size of the C8 peak, which indicates the amount of carbon on the Si surface, was greater after treatment by the conventional method and by the method of the present invention than before treatment. It is decreasing after that.
従来の方法による処理後、本発明の方法による処理後と
も、その８≦表面を厚さ約５０００ ！酸化した後に酸
化膜を除去しセコ・エッチを施してエッチビットを観察
する表面損傷観察法によれば、処理後のＳｉ表面には損
傷を示すエッチビットはほとんど現れない。After treatment by the conventional method and by the method of the present invention, the thickness of the surface is 8≦about 5000! According to a surface damage observation method in which the oxide film is removed after oxidation, secco etching is performed, and etch bits are observed, almost no etch bits indicating damage appear on the Si surface after processing.
第１図１３は、ハロゲン化炭素系ガスでドライエツチン
グした後のＳｉ基板を本発明の方法を用いて処理した後
の、注入不純物Ｂのプロファイルを、８ＩＭ８によって
測定した結果を示したものである。従来の方法を用いて
処理した後のプロファイルである１２に比べ、処理前の
プロファイルからの変化は圧倒的に少ない。FIG. 13 shows the results of measuring the profile of the implanted impurity B using the 8IM8 after dry etching a Si substrate with a halogenated carbon gas and treating it using the method of the present invention. . Compared to profile 12, which is the profile after processing using the conventional method, the change from the profile before processing is overwhelmingly small.
以上詳細に述べた通り、本発明によれば、注入不純物プ
ロファイルを変化させない低温で、ノーロダン化炭素系
ガスによるドライエツチング後のＳｉ表面の損傷を乾式
で除去することができる。As described in detail above, according to the present invention, damage to the Si surface after dry etching with a no-rodunized carbon-based gas can be removed by a dry method at a low temperature without changing the implanted impurity profile.
第１図は注入不純物プロファイルの従来方法及び本発明
の方法による変化を示す図。
第２図は本発明の詳細な説明する図。
第３図は塩素分圧及びイオン加速電圧をパラメータとし
たイオンビーム電流密度の変化にょる工、チングレート
の変化を示す図。
第４図はＸＰ８ビークの従来方法及び本発明の方法によ
る変化を示す図。FIG. 1 is a diagram showing changes in the implanted impurity profile according to the conventional method and the method of the present invention. FIG. 2 is a diagram illustrating the present invention in detail. FIG. 3 is a diagram showing changes in processing rate due to changes in ion beam current density using chlorine partial pressure and ion acceleration voltage as parameters. FIG. 4 is a diagram showing changes in the XP8 peak according to the conventional method and the method of the present invention.
Claims (1)
Ｓｉ基板を、塩素ガス雰囲気中またはフッ素ガス雰囲気
中でイオンビームエッチングした後、酸素ガス雰囲気中
で、加熱、またはＵＶ光照射、またはＩＲ光照射加熱・
ＵＶ光照射・ＩＲ光照射のうち２つ以上の組み合せを行
うことを特徴とするドライエッチング後Ｓｉ表面損傷の
乾式による除去方法。A Si substrate that has been dry etched with a halogenated carbon gas is subjected to ion beam etching in a chlorine gas atmosphere or a fluorine gas atmosphere, and then heated or heated by UV light irradiation or IR light irradiation in an oxygen gas atmosphere.・
A dry method for removing Si surface damage after dry etching, characterized by performing a combination of two or more of UV light irradiation and IR light irradiation.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP163585A JPS61160939A (en) | 1985-01-09 | 1985-01-09 | Method of dry removal of si surface damage after dry etching |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP163585A JPS61160939A (en) | 1985-01-09 | 1985-01-09 | Method of dry removal of si surface damage after dry etching |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61160939A true JPS61160939A (en) | 1986-07-21 |
Family
ID=11506986
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP163585A Pending JPS61160939A (en) | 1985-01-09 | 1985-01-09 | Method of dry removal of si surface damage after dry etching |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61160939A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01293618A (en) * | 1988-05-23 | 1989-11-27 | Mitsubishi Electric Corp | Plasma etching device |
| JPH04229621A (en) * | 1990-07-09 | 1992-08-19 | Mitsubishi Electric Corp | Method of processing surface of semiconductor substrate |
| EP0932192A1 (en) * | 1995-02-03 | 1999-07-28 | Matsushita Electronics Corporation | Etching of a platinum electrode |
| US5976328A (en) * | 1996-01-26 | 1999-11-02 | Hitachi, Ltd. | Pattern forming method using charged particle beam process and charged particle beam processing system |
| CN102549721A (en) * | 2009-10-27 | 2012-07-04 | 朗姆研究公司 | Method and apparatus of halogen removal |
-
1985
- 1985-01-09 JP JP163585A patent/JPS61160939A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01293618A (en) * | 1988-05-23 | 1989-11-27 | Mitsubishi Electric Corp | Plasma etching device |
| JPH04229621A (en) * | 1990-07-09 | 1992-08-19 | Mitsubishi Electric Corp | Method of processing surface of semiconductor substrate |
| EP0932192A1 (en) * | 1995-02-03 | 1999-07-28 | Matsushita Electronics Corporation | Etching of a platinum electrode |
| US5976328A (en) * | 1996-01-26 | 1999-11-02 | Hitachi, Ltd. | Pattern forming method using charged particle beam process and charged particle beam processing system |
| US6344115B1 (en) | 1996-01-26 | 2002-02-05 | Hitachi, Ltd. | Pattern forming method using charged particle beam process and charged particle beam processing system |
| CN102549721A (en) * | 2009-10-27 | 2012-07-04 | 朗姆研究公司 | Method and apparatus of halogen removal |
| JP2013509003A (en) * | 2009-10-27 | 2013-03-07 | ラム リサーチ コーポレーション | Method and apparatus for halogen removal |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR100391840B1 (en) | Method and apparatus for forming an insulating film on the surface of a semiconductor substrate | |
| JPS61270830A (en) | Surface cleaning method | |
| Kaneko et al. | Low Temperature Silicon Surface Cleaning by HF Etching/Ultraviolet Ozone Cleaning (HF/UVOC) Method (II)–in situ UVOC | |
| JPS61160939A (en) | Method of dry removal of si surface damage after dry etching | |
| KR970003671A (en) | Silicon Wafer Processing Method | |
| JPH06509056A (en) | Generation of clean well-aligned CdTe surfaces using laser ablation | |
| JPH03116727A (en) | Manufacture of semiconductor device | |
| JPH01200628A (en) | Dry etching | |
| US6083354A (en) | Treatment method for diamonds | |
| JPS58101429A (en) | Dry etching method | |
| JPS6286731A (en) | Laser beam irradiation si surface treating device | |
| JPS61160938A (en) | Damage removal for si substrate after dry etching | |
| JPS62139335A (en) | Surface cleaning process | |
| JPH0656846B2 (en) | Method for treating semiconductor substrate | |
| JPH05229896A (en) | Production of conductive diamond | |
| JPH065559A (en) | Ozone plasma treatment | |
| JP2681112B2 (en) | Method for manufacturing silicon substrate for semiconductor device | |
| JPH0738380B2 (en) | Surface treatment method | |
| JPH0644562B2 (en) | Surface cleaning method | |
| JPS63228620A (en) | Surface cleaning method | |
| JPS6175528A (en) | Si surface processing by irradiation of multiple laser beam | |
| JPH0611038B2 (en) | Surface treatment method | |
| JP2611496B2 (en) | Surface treatment method | |
| JP2558765B2 (en) | Method for manufacturing semiconductor device | |
| JPH0624197B2 (en) | Surface protection method |