JPH0472389B2 - - Google Patents
Info
- Publication number
- JPH0472389B2 JPH0472389B2 JP59215235A JP21523584A JPH0472389B2 JP H0472389 B2 JPH0472389 B2 JP H0472389B2 JP 59215235 A JP59215235 A JP 59215235A JP 21523584 A JP21523584 A JP 21523584A JP H0472389 B2 JPH0472389 B2 JP H0472389B2
- Authority
- JP
- Japan
- Prior art keywords
- strip
- strips
- resin
- lead frame
- section
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229920005989 resin Polymers 0.000 claims description 39
- 239000011347 resin Substances 0.000 claims description 39
- 238000007789 sealing Methods 0.000 claims description 31
- 238000005520 cutting process Methods 0.000 claims description 22
- 239000004065 semiconductor Substances 0.000 claims description 20
- 238000004519 manufacturing process Methods 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 13
- 230000008878 coupling Effects 0.000 claims description 3
- 238000010168 coupling process Methods 0.000 claims description 3
- 238000005859 coupling reaction Methods 0.000 claims description 3
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 206010058109 Hangnail Diseases 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 238000003486 chemical etching Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 238000001721 transfer moulding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4821—Flat leads, e.g. lead frames with or without insulating supports
- H01L21/4842—Mechanical treatment, e.g. punching, cutting, deforming, cold welding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、樹脂封止形半導体装置、特に電力用
樹脂封止形半導体装置の製造方法に関連する。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a method for manufacturing a resin-sealed semiconductor device, particularly a resin-sealed semiconductor device for power use.
従来の技術
従来、一般的な電力用樹脂封止形半導体装置で
は、半導体チツプが装着された支持板の裏面に封
止樹脂が形成されていない。このため、この半導
体装置を外部放熱体に取付けるときは、外部放熱
体との間に絶縁シートを介在させなければなら
ず、取付作業が煩雑になつた。そこで支持板の裏
面にも封止樹脂を形成する方法が提案された。こ
のような樹脂封止技術は、例えば、特開昭57−
178352号公報及び特開昭58−145338号公報で開示
されている。すなわち、リードフレームの一部を
構成する支持板上に半導体チツプを電気伝導可能
に接着したのち、半導体チツプは細線で外部リー
ドと接続される。次にリードフレームは金型に装
着され、キヤビテイ内に融解樹脂が圧入される。
このとき、キヤビテイ内で支持板が移動しないよ
うに、支持板の各側部に連結された外部リードと
細条が金型で把持される。融解樹脂が固化したの
ち、リードフレームが金型から取外され、リード
フレームの所定部分が切断される。特開昭57−
178352号では、この切断を細条を折り曲げること
により行うため、封止樹脂の外面をまたぐように
して細条に小断面部を形成している。BACKGROUND ART Conventionally, in a typical resin-encapsulated semiconductor device for electric power, a sealing resin is not formed on the back surface of a support plate on which a semiconductor chip is mounted. Therefore, when this semiconductor device is attached to an external heat radiator, an insulating sheet must be interposed between the semiconductor device and the external heat radiator, making the mounting work complicated. Therefore, a method has been proposed in which a sealing resin is also formed on the back surface of the support plate. Such resin encapsulation technology is known, for example, from Japanese Patent Application Laid-open No. 1983-
It is disclosed in JP-A No. 178352 and JP-A-58-145338. That is, after a semiconductor chip is electrically conductively bonded onto a support plate constituting a part of a lead frame, the semiconductor chip is connected to external leads using thin wires. Next, the lead frame is attached to a mold, and molten resin is press-fitted into the cavity.
At this time, the external leads and strips connected to each side of the support plate are gripped by the mold so that the support plate does not move within the cavity. After the molten resin has solidified, the lead frame is removed from the mold and a predetermined portion of the lead frame is cut. Unexamined Japanese Patent Publication 1987-
In No. 178352, this cutting is performed by bending the strip, so that a small cross section is formed in the strip so as to straddle the outer surface of the sealing resin.
発明が解決しようとする問題
しかし、細条の切断面が封止樹脂の外面に露出
することには変わりない。そこで特開昭58−
143538号では、封止樹脂の外面から窪むように、
化学エツチング等の方法により細条の切断端部を
一部分だけ除去していた。しかしこの方法は、製
造工程においてエツチング工程が追加されコスト
アツプをまねき、しかも所望の化学エツチング等
を量産的に行うこと自体に新たな技術を要するの
で実用的とは言い難い。Problems to be Solved by the Invention However, the cut surfaces of the strips are still exposed to the outer surface of the sealing resin. Therefore, Japanese Patent Application Publication No. 1983-
In No. 143538, it is recessed from the outer surface of the sealing resin,
Only a portion of the cut end of the strip was removed by chemical etching or other methods. However, this method cannot be said to be practical because an etching step is added to the manufacturing process, leading to an increase in cost, and furthermore, a new technology is required to carry out the desired chemical etching in mass production.
そこで、特願昭59−159047号（特開昭61−
56420号公報）に開示されるように、本願出願人
は先に１個のリードフレームに含まれる多数の支
持板の各々から導出された細条に引張力を加え
て、これらを引抜き破断する方法を出願した。こ
の方法によれば、細条に設ける小断面部を樹脂封
止体の内部に位置されることにより、細条を封止
樹脂の内部で破断することが可能である。しかし
この方法は、実用上問題の多いことが判明した。
例えば、10個の支持板が並置されたいわゆる10連
のリードフレームから許容コレクタ損失30W程度
のパワートランジスタを製造する場合、一本の細
条を外方に引張つて切断するのに要する引張力
は、約７Kgであつた。従つて全ての細条を同時に
切断するには、７Kg×10連×２本＝140Kgの引張
力が必要である。実際の切断工程では、余裕能力
を考慮して250〜300Kg程度の引張力を発生する切
断装置及びこれに対応できるリードフレームの固
定装置が必要になる。この場合、使用する切断装
置の構造によつては、細条の導出方向に対し傾斜
方向に引張力を加えなければならないため、250
〜300Kgの引張力を発生するには500Kg程度の圧力
が必要である。 Therefore, Japanese Patent Application No. 159047 (1982)
As disclosed in Japanese Patent Publication No. 56420), the applicant of the present application has previously developed a method in which a tensile force is applied to the strips derived from each of a large number of support plates included in one lead frame, and the strips are pulled out and broken. has been applied for. According to this method, by positioning the small cross section provided in the strip inside the resin sealing body, it is possible to break the strip inside the sealing resin. However, this method has been found to have many practical problems.
For example, when manufacturing a power transistor with an allowable collector loss of about 30W from a so-called 10-lead frame with 10 supporting plates arranged side by side, the tensile force required to pull one strip outward and cut it is It weighed about 7 kg. Therefore, to cut all the strips at the same time, a tensile force of 7 kg x 10 strips x 2 = 140 kg is required. In the actual cutting process, a cutting device that generates a tensile force of about 250 to 300 kg and a lead frame fixing device that can handle this are required, taking into account the extra capacity. In this case, depending on the structure of the cutting device used, a tensile force of 250
A pressure of around 500Kg is required to generate a tensile force of ~300Kg.
このように１個のリードフレームに含まれる全
細条を同時に切断する方法では、大きな引張力発
生装置及び対応するリードフレーム固定装置が必
要となり、装置が大型化しかつ高価である。しか
も、全細条を同時に切断すると切断端部にバリや
ささくれが発生し易く、リードフレーム固定装置
の稼動条件を設定することも難かしい。 This method of simultaneously cutting all strips included in one lead frame requires a large tensile force generating device and a corresponding lead frame fixing device, making the device large and expensive. Furthermore, if all the strips are cut at the same time, burrs and hangnails are likely to occur at the cut ends, and it is also difficult to set operating conditions for the lead frame fixing device.
課題を解決するための手段
本発明による樹脂封止形半導体装置の製造方法
は、複数の支持板及び該支持板の各々の上に配置
された半導体チツプを被覆しかつ並置された複数
の封止樹脂と、該封止樹脂の各々の一端から導出
された外部リードと、前記封止樹脂の各々の他端
から導出された細条と、該細条の各々に形成され
た最小断面部と、前記細条をその導出方向に対し
て直角な方向に連結する連結細条とを有するリー
ドフレームから前記細条を切断して樹脂封止形半
導体装置を製造する方法において、前記最小断面
部を前記封止樹脂の内部に位置させ、前記連結細
条に非連結部を形成して前記リードフレーム中の
前記連結細条を複数に分割した状態で、前記非連
結部の一方の側にある複数本の前記細条に外側に
向かう引張力を加え前記非連結部の一方の側にあ
る複数本の前記細条を前記最小断面部において切
断して、前記封止樹脂の内部に切断部を形成する
第１の工程と、第１の工程の後に、前記非連結部
の前記一方の側と反対の側にある前記細条に外側
に向かう引張力を加え前記非連結部の前記一方の
側と反対側にある複数本の前記細条を前記最小断
面部において切断して、前記封止樹脂の内部に切
断部を形成する第２の工程とを含む。Means for Solving the Problems A method for manufacturing a resin-sealed semiconductor device according to the present invention includes a plurality of sealing plates that cover a plurality of support plates and a semiconductor chip placed on each of the support plates and are juxtaposed. a resin, an external lead led out from one end of each of the sealing resin, a strip led out from the other end of each of the sealing resin, and a minimum cross section formed in each of the strips; In the method of manufacturing a resin-sealed semiconductor device by cutting the strip from a lead frame having a connecting strip that connects the strip in a direction perpendicular to the direction in which the strip is led out, A plurality of strips on one side of the non-coupled portion are located inside the sealing resin, and a non-coupled portion is formed in the coupling strip to divide the coupling strip in the lead frame into a plurality of pieces. applying an outward tensile force to the strips and cutting the plurality of strips on one side of the unconnected portion at the minimum cross section to form a cut portion inside the sealing resin; a first step; and after the first step, applying an outward tensile force to the strip on the side opposite to the one side of the unconnected portion; and a second step of cutting the plurality of strips on the side at the minimum cross section to form a cut section inside the sealing resin.
作 用
本願発明では、細条に最小断面部を形成し、こ
の最小断面部を封止樹脂の内部に位置させて細条
を引張り破断する。したがつて、細条の破断部を
封止樹脂の内部に形成でき、細条の破断部と外部
放熱体及び取付けねじまでの沿面距離が増大す
る。結果として、他の電子部品や人体との接触に
よる短絡事故が確実に回避できるし、絶縁耐圧も
十分に確保できる。また、連結細条を複数の単位
に分割して複数本づつに引張力を加えて、細条を
複数本づつ複数回に分けて引張り破断するので、
細条を小さい引張力で容易にかつ良好に破断でき
る。また、細条はその長さ方向の外側に向う引張
り力で破断されるから、封止樹脂を破損すること
もない。Effects In the present invention, a minimum cross section is formed in the strip, and the strip is tensilely broken by positioning this minimum cross section inside the sealing resin. Therefore, the broken portion of the strip can be formed inside the sealing resin, and the creepage distance between the broken portion of the strip and the external heat radiator and mounting screw is increased. As a result, short-circuit accidents due to contact with other electronic components or the human body can be reliably avoided, and sufficient dielectric strength can be ensured. In addition, the connected strips are divided into multiple units and tensile force is applied to each unit, and the strips are divided into multiple units and tensile broken multiple times.
The strips can be broken easily and well with a small tensile force. Further, since the strips are broken by a tensile force directed outward in the longitudinal direction, the sealing resin is not damaged.
実施例
以下、本発明の実施例を図面について説明す
る。第１図及び第２図は、本発明により製造した
リードフレーム１を示す。リードフレーム１は、
互いにＸ方向に対し並行かつＹ方向に一列に配置
された10個の支持板２と、各支持板２の一端に連
結された外部リードＬと、各支持板２の他端に連
結された２本の細条１０とを有する。外部リード
Ｌは、ベースリード３、コレクタリード４及びエ
ミツタリード５を有し、これらのリードは、Ｙ方
向に伸びるタイバー６及び共通細条７によつて連
結される。隣接するベースリード３とエミツタリ
ー５との間には、２個のガイド孔８が穿設された
リブ９がタイバー６と共通細条７との間に接続さ
れる。Embodiments Hereinafter, embodiments of the present invention will be described with reference to the drawings. 1 and 2 show a lead frame 1 manufactured according to the present invention. Lead frame 1 is
10 support plates 2 arranged parallel to each other in the X direction and in a row in the Y direction, an external lead L connected to one end of each support plate 2, and 2 connected to the other end of each support plate 2. It has a book strip 10. The external lead L has a base lead 3, a collector lead 4, and an emitter lead 5, and these leads are connected by a tie bar 6 and a common strip 7 extending in the Y direction. A rib 9 in which two guide holes 8 are bored is connected between the tie bar 6 and the common strip 7 between the adjacent base lead 3 and the emitter 5.
支持板２の他端から伸びる細条１０に形成され
た肩１２から外側は小断面部１３が形成される
（第３図）。なお、支持板２と細条１０の境界を厚
板部と薄板部の境界と見なしている。肩１２に接
近して細条１０には菱形孔１４が設けられ、菱形
孔１４の角部を含むように最小断面部１５が形成
される。菱形孔１４の代りに適当な形状を有する
切欠き、矩形孔又は円形孔で最小断面部１５を形
成することもできる。最小断面部１５を含む平面
を肩１２を含む平面と一致させてもよい。 A small section 13 is formed outwardly from a shoulder 12 formed on the strip 10 extending from the other end of the support plate 2 (FIG. 3). Note that the boundary between the support plate 2 and the strip 10 is regarded as the boundary between the thick plate part and the thin plate part. Adjacent to the shoulder 12, the strip 10 is provided with a diamond-shaped hole 14, and a minimum cross-section 15 is formed to include the corner of the diamond-shaped hole 14. Instead of the diamond-shaped hole 14, the minimum cross-section portion 15 can also be formed by a notch, a rectangular hole, or a circular hole having a suitable shape. The plane containing the smallest cross section 15 may coincide with the plane containing the shoulder 12.
細条１０の外端には連結細条１１が直角に接続
される。第１図に示す実施例では、リードフレー
ム１の両端に設けた連結細条１１はリードフレー
ム１の両端の内側に設けたものとは異なる長さを
有する。即ち内側の連結細条１１ａは、異なる支
持板２から伸びかつ互いに隣接する２本の細条１
０を連結する。一方、外側の連結細条１１ａは、
同一の支持板２から伸びる２本の細条１０及びこ
れに隣接する支持板２の隣接する細条１０から成
る合計３本の細条１０を連結する。なお、１本の
連結細条１１が何本の細条１０を連結するかは、
リードフレーム１の量産設計時に必要に応じて決
定することであるが、実用上、１本の連結細条１
１に連結する細条は５本以下が望ましい。いずれ
にしても、本発明のリードフレーム１では、非連
結部１６によつて連結細条１１は複数の単位に分
割される。非連結部１６は、樹脂封止後に形成す
ることもできるが、通常はリードフレーム製造時
に形成する。 A connecting strip 11 is connected at right angles to the outer end of the strip 10. In the embodiment shown in FIG. 1, the connecting strips 11 on the ends of the lead frame 1 have a different length than those on the inside of the ends of the lead frame 1. In the embodiment shown in FIG. That is, the inner connecting strip 11a connects two mutually adjacent strips 1 extending from different support plates 2.
Concatenate 0. On the other hand, the outer connecting strip 11a is
A total of three strips 10, consisting of two strips 10 extending from the same support plate 2 and adjacent strips 10 of adjacent support plates 2, are connected. In addition, how many strips 10 are connected by one connecting strip 11?
This is determined as necessary when designing the mass production of the lead frame 1, but in practice, one connecting strip 1
It is desirable that the number of stripes connected to 1 is 5 or less. In any case, in the lead frame 1 of the present invention, the connecting strips 11 are divided into a plurality of units by the unconnected portions 16. Although the non-connecting portion 16 can be formed after resin sealing, it is usually formed during lead frame manufacture.
各連結細条１１の両端には細条１０の側縁１７
からＹ方向に突出する延長部１８は非連結部１６
に残在するように形成される。この結果、細条１
０の両端にはそれぞれ肩ＡとＢが形成され、この
肩ＡとＢが工具の係止部として利用できるので、
細条１０の切断作業が容易かつ確実に行え１０の
切断端部におけるバリやささくれの発生を防止す
る一因ともなる。 At both ends of each connecting strip 11 are side edges 17 of the strip 10.
The extension part 18 that protrudes in the Y direction from the unconnected part 16
It is formed so that it remains in the As a result, strip 1
Shoulders A and B are formed at both ends of 0, and these shoulders A and B can be used as locking parts for the tool, so
The cutting operation of the strip 10 can be performed easily and reliably, and this also helps to prevent the occurrence of burrs and hangnails at the cut end of the strip 10.
また、リードフレーム１の製造、保管及び移送
時に両端の細条が周囲と接触して変形し、後の製
造工程に支障を来たすことがあるが、連結細条１
１ｂによりリードフレーム１の両端の細条１０を
連結して、リードフレーム１の変形を防止するこ
とができる。 In addition, during manufacturing, storage, and transportation of the lead frame 1, the strips at both ends may come into contact with the surroundings and be deformed, causing problems in the subsequent manufacturing process.
1b connects the strips 10 at both ends of the lead frame 1, thereby preventing the lead frame 1 from being deformed.
上述のリードフレーム１は、厚板部と薄板部を
有する銅板をプレス加工で成形し、その後、銅表
面にニツケル層を被覆したものである。成形の
際、半導体装置取付用のねじを挿入する孔を設け
るため、支持板２には凹部１９も同時に成形され
る。凹部１９は孔部とすることも多い。リードフ
レーム１の作成後は、公知の方法により各支持板
２にトランジスタチツプ２５が電気的導通可能に
半田付けされる。その後、トランジスタチツプ２
５の各電極（図示せず）とベースリード３又はエ
ミツタリード５がアルミニユウム線２１又は２２
で結線される。なお、コレクタリード４は支持板
２と一体化ている。更に、トランジスタチツプ２
５は保護樹脂２８で被覆される。 The lead frame 1 described above is formed by pressing a copper plate having a thick plate part and a thin plate part, and then coating the copper surface with a nickel layer. At the time of molding, a recess 19 is also molded into the support plate 2 at the same time in order to provide a hole into which a screw for mounting a semiconductor device is inserted. The recess 19 is often a hole. After producing the lead frame 1, the transistor chips 25 are soldered to each support plate 2 by a known method so as to be electrically conductive. After that, transistor chip 2
Each electrode (not shown) of 5 and base lead 3 or emitter lead 5 is made of aluminum wire 21 or 22.
is connected with. Note that the collector lead 4 is integrated with the support plate 2. Furthermore, transistor chip 2
5 is coated with a protective resin 28.
トランジスタチツプ２５が接着されたリードフ
レーム１は、公知のトランスフアモールド法によ
り樹脂封止される。第４図及び第５図に示す通
り、リードフレームの支持板２は上部金型２９及
び下部金型３０で構成される金型のキヤビテイ３
１内に保持される。支持板２は、下部金型から約
0.4mmだけ浮いた状態でコレクタリード４と細条
１０によりキヤビテイ３１内に保持される。金型
の一部には、融解樹脂を圧入するゲート３２が設
けられている。上部金型２９には、下部金型３０
に接触するように下方に伸びる円筒部２９ａと、
キヤビテイ３１内に圧入される融解樹脂の流れを
支持板２の裏面側へ偏向する下方突起２９ｂとが
設けられている。細条１０の最小断面部１５は、
キヤビテイ形成面３３から実質的に所定距離だけ
内側に配置される。 The lead frame 1 to which the transistor chip 25 is bonded is sealed with resin by a known transfer molding method. As shown in FIG. 4 and FIG.
It is kept within 1. Support plate 2 is approximately
It is held in the cavity 31 by the collector lead 4 and the strip 10 in a floating state by 0.4 mm. A part of the mold is provided with a gate 32 through which molten resin is press-fitted. The upper mold 29 has a lower mold 30
a cylindrical portion 29a extending downward so as to come into contact with the cylindrical portion 29a;
A lower protrusion 29b is provided to deflect the flow of molten resin press-fitted into the cavity 31 toward the back surface of the support plate 2. The smallest cross section 15 of the strip 10 is
It is disposed substantially inward from the cavity forming surface 33 by a predetermined distance.
融解樹脂（熱硬化性エポキシ樹脂）は、ゲート
３２からキヤビテイ３１内に圧入され、所定時間
経過すると第６図及び第７図に示す通り、硬化
し、封止樹脂３４が形成される。その後リードフ
レーム１を金型から取出し、熱処理を行い封止樹
脂３４を完全に硬化させると、第８図に示すリー
ドフレーム１が得られる。 The molten resin (thermosetting epoxy resin) is press-fitted into the cavity 31 through the gate 32, and after a predetermined period of time, it hardens to form a sealing resin 34, as shown in FIGS. 6 and 7. Thereafter, the lead frame 1 is taken out from the mold and subjected to heat treatment to completely cure the sealing resin 34, thereby obtaining the lead frame 1 shown in FIG. 8.
細条１０を切断する次の工程では、多数の細条
１０は、イ，ロ，ハ……等の複数の単位に分割さ
れた連結細条毎に切断される。この切断には第１
０図及び第１１図に示す切断装置が使用される。
この切断装置は、台座３６と、台座３６上のリー
ドフレーム１を固定する固定部材３７と、上下に
摺動するポンチ３８とを有する。ポンチ３８の下
部には傾斜面３８ａが形成される。 In the next step of cutting the strips 10, the large number of strips 10 are cut into connected strips divided into a plurality of units such as A, B, C, etc. For this cutting, the first
The cutting device shown in FIGS. 0 and 11 is used.
This cutting device includes a pedestal 36, a fixing member 37 that fixes the lead frame 1 on the pedestal 36, and a punch 38 that slides up and down. An inclined surface 38a is formed at the bottom of the punch 38.
切断装置上に固定されたリードフレーム１の細
条１０は、ポンチ３８の下降に伴い、連結細条１
１の細条１０の両側にある肩ＡとＢがポンチ３８
の傾斜面３８ａと接触する。肩ＡとＢが更に傾斜
面３８ａで外側のやや斜め下方向に強制的に移動
されると、細条１０は最小断面部１５で切断され
る。このとき多数の細条１０は、ポンチ３８とリ
ードフレーム１を相対的に移動させることによ
り、３本の細条を切断可能な１つのポンチ３８で
リードフレームの端からイ，ロ，ハ……等の単位
毎に連続して切断される。もちろんこの連続切断
は、イ，ロ，ハ……等の単位にそれぞれ対応した
複数のポンチ３８を有し、これらのポンチ３８が
所定の時間差で下降する装置を使用してもよい。
また、かぎ状の工具を外側から細条１０の両側に
ある肩ＡとＢにひつかけ、細条１０をその長さ方
向にまつすぐ沿つて引張る形式の切断装置を使用
することもできる。リードフレーム１は、その
後、タイバー６及び共通細条７も切断され、第９
図に示す樹脂封止形パワートランジスタが得られ
る。４６は金型の下方突起３９ｂに対応して形成
された溝である。 As the punch 38 is lowered, the strip 10 of the lead frame 1 fixed on the cutting device is separated from the connecting strip 1.
Shoulders A and B on both sides of strip 10 of 1 are punches 38
contact with the inclined surface 38a of. When the shoulders A and B are forced further outward and slightly diagonally downward on the inclined surface 38a, the strip 10 is cut at the minimum cross section 15. At this time, by moving the punch 38 and the lead frame 1 relatively, the large number of strips 10 can be cut from the end of the lead frame with one punch 38 that can cut three strips. It is cut continuously into units such as. Of course, for this continuous cutting, it is also possible to use a device that has a plurality of punches 38 corresponding to units such as A, B, C, etc., and in which these punches 38 descend at a predetermined time difference.
It is also possible to use a cutting device in which a hook-shaped tool is hooked from the outside to shoulders A and B on both sides of the strip 10, and the strip 10 is pulled straight along the length of the strip. The lead frame 1 is then cut, with the tie bars 6 and the common strip 7 also being cut.
The resin-sealed power transistor shown in the figure is obtained. 46 is a groove formed corresponding to the lower protrusion 39b of the mold.
前記最小断面部１５は封止樹脂３４の端面４３
より内側であるから、細条１０の切断端部は切断
により端面４３に形成された孔４４の奥に位置す
る。従つて、細条１０の切断端部から外部放熱体
までの沿面距離（封止樹脂３４の表面に沿つての
距離）及びこの切断端部から半導体装置の取付孔
４５に挿入されたねじの頭部までの沿面距離が長
くなる。この結果、他の素子、キヤビネツト、人
体等を含む周囲との接触による短絡事故は実際上
起こり得ないし、外部放熱体およびねじとの間の
絶縁耐圧も十分に確保できる。 The minimum cross section 15 is the end surface 43 of the sealing resin 34.
Since it is located further inside, the cut end of the strip 10 is positioned deeper into the hole 44 formed in the end face 43 by cutting. Therefore, the creepage distance from the cut end of the strip 10 to the external heat sink (distance along the surface of the sealing resin 34) and the head of the screw inserted from the cut end into the mounting hole 45 of the semiconductor device. The creepage distance to the part becomes longer. As a result, a short circuit accident due to contact with the surroundings including other elements, a cabinet, a human body, etc. cannot occur, and a sufficient dielectric strength voltage between the external heat sink and the screw can be ensured.
発明の効果
上述のとおり、本発明の製造方法によれば、連
結細条を複数に分割してから細条を複数本づつ複
数回に分けて引張り破断するので、細条を比較的
小さい力で容易にかつ良好に破断できる。したが
つて、細条の破断部が封止樹脂の内部に形成さ
れ、短絡事故が確実に防止されかつ絶縁耐圧が大
きく得られる半導体装置を、生産性良くかつ歩留
まり良く製造することができる。Effects of the Invention As described above, according to the manufacturing method of the present invention, the connected strip is divided into a plurality of pieces and then the strips are tensile broken in multiple times, so that the strip can be broken with a relatively small force. Can be broken easily and well. Therefore, it is possible to manufacture a semiconductor device with high productivity and yield, in which the broken portion of the strip is formed inside the sealing resin, short-circuit accidents are reliably prevented, and a high dielectric strength voltage is obtained.
第１図は本発明によるリードフレームの平面
図、第２図はこの一部を示す斜視図、第３図は最
小断面部を示す一部拡大平面図、第４図はリード
フレームを金型に取付けたときのコレクタリード
に沿う断面図、第５図はエミツタリードの中心線
に沿う第４図と同様の断面図、第６図は第４図に
対応する融解樹脂の充填後の断面図、第７図は第
５図に対応する第６図と同様の断面図、第８図は
樹脂封止後のリードフレームの平面図、第９図
は、本発明の製造方法により得られた半導体装置
の斜視図、第１０図及び第１１図はそれぞれ切断
前後の細条の切断装置の一部を示す断面図であ
る。
１……リードフレーム、２……支持板、３，
４，５……外部リード、１０……細条、１１……
連結細条、１５……最小断面部、１６……非連結
部、１８……延長部、３６……台座、３７……固
定部材、３８……ポンチ。
Fig. 1 is a plan view of a lead frame according to the present invention, Fig. 2 is a perspective view showing a part thereof, Fig. 3 is a partially enlarged plan view showing the smallest cross section, and Fig. 4 is a lead frame in a mold. 5 is a sectional view taken along the collector lead when installed; FIG. 5 is a sectional view similar to FIG. 4 taken along the center line of the emitter lead; FIG. 7 is a sectional view similar to FIG. 6 corresponding to FIG. 5, FIG. 8 is a plan view of the lead frame after resin sealing, and FIG. 9 is a diagram of the semiconductor device obtained by the manufacturing method of the present invention. The perspective view, FIG. 10, and FIG. 11 are sectional views showing a part of the strip cutting device before and after cutting, respectively. 1...Lead frame, 2...Support plate, 3,
4, 5...external lead, 10...details, 11...
Connecting strip, 15...Minimum cross section, 16...Unconnected part, 18...Extension part, 36...Pedestal, 37...Fixing member, 38...Punch.
Claims (1)
された半導体チツプを被覆しかつ並置された複数
の封止樹脂と、該封止樹脂の各々の一端から導出
された外部リードと、前記封止樹脂の各々の他端
から導出された細条と、該細条の各々に形成され
た最小断面部と、前記細条を導出方向に対して直
角な方向に連結する連結細条とを有するリードフ
レームから前記細条を切断して樹脂封止形半導体
装置を製造する方法において、 前記最小断面部を前記封止樹脂の内部に位置さ
せ、前記連結細条に非連結部を形成して前記リー
ドフレーム中の前記連結細条を複数に分割した状
態で、前記非連結部の一方の側にある複数本の前
記細条に外側に向かう引張力を加えこれら細条を
前記最小断面部において切断して、前記封止樹脂
の内部に切断部を形成する第１の工程と、 前記第１の工程の後に前記非連結部の前記一方
の側と反対の側にある複数本の前記細条に外側に
向かう引張力を加えこれら細条を前記最小断面部
において切断して、前記封止樹脂の内部に切断部
を形成する第２の工程、 とを含むことを特徴とする樹脂封止形半導体装置
の製造方法。 ２ 前記第１の工程と第２の工程を連続して行い
前記リードフレーム中の前記細条を複数本づつ複
数回に分けて連続的に切断する特許請求の範囲第
１項記載の樹脂封止形半導体装置の製造方法。 ３ 前記細条の長さ方向でかつ外側に向う引張力
は、樹脂封止されたリードフレームを固定したの
ち、傾斜面を有するポンチを前記細条の長さ方向
に対し直角方向に移動させ、前記連結細条を前記
傾斜面で外側に引張ることにより与えられる特許
請求の範囲第１項又は第２項記載の樹脂封止形半
導体装置の製造方法。[Scope of Claims] 1. A plurality of support plates, a plurality of sealing resins arranged in parallel and covering a semiconductor chip disposed on each of the support plates, and a plurality of sealing resins that are drawn out from one end of each of the sealing resins. an external lead, a strip led out from the other end of each of the sealing resins, a minimum cross section formed in each of the strips, and the strips connected in a direction perpendicular to the leading direction. In the method of manufacturing a resin-sealed semiconductor device by cutting the strip from a lead frame having a connecting strip, the minimum cross section is located inside the sealing resin, and the connecting strip is not connected to the connecting strip. With the connecting portion formed and the connecting strip in the lead frame divided into a plurality of pieces, an outward tensile force is applied to the plurality of strips on one side of the non-coupling portion. a first step of cutting at the minimum cross section to form a cut section inside the sealing resin; A second step of applying an outward tensile force to the plurality of strips and cutting the strips at the minimum cross-section to form a cut section inside the sealing resin. A method for manufacturing a resin-encapsulated semiconductor device. 2. Resin sealing according to claim 1, wherein the first step and the second step are performed continuously to cut the strips in the lead frame in multiple steps each. A method for manufacturing a shaped semiconductor device. 3. The tensile force directed outward in the length direction of the strip is applied by moving a punch having an inclined surface in a direction perpendicular to the length direction of the strip after fixing the resin-sealed lead frame; 3. The method of manufacturing a resin-sealed semiconductor device according to claim 1, wherein the connecting strip is pulled outward by the inclined surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21523584A JPS6194349A (en) | 1984-10-16 | 1984-10-16 | Manufacture of resin seal type semiconductor device and lead frame used for said manufacture |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21523584A JPS6194349A (en) | 1984-10-16 | 1984-10-16 | Manufacture of resin seal type semiconductor device and lead frame used for said manufacture |
Related Child Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1150427A Division JPH0736430B2 (en) | 1989-06-15 | 1989-06-15 | Method for manufacturing resin-sealed semiconductor device |
| JP1150428A Division JPH06103728B2 (en) | 1989-06-15 | 1989-06-15 | Method for manufacturing resin-sealed semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6194349A JPS6194349A (en) | 1986-05-13 |
| JPH0472389B2 true JPH0472389B2 (en) | 1992-11-18 |
Family
ID=16668951
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21523584A Granted JPS6194349A (en) | 1984-10-16 | 1984-10-16 | Manufacture of resin seal type semiconductor device and lead frame used for said manufacture |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6194349A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0736430B2 (en) * | 1989-06-15 | 1995-04-19 | サンケン電気株式会社 | Method for manufacturing resin-sealed semiconductor device |
| NL9100470A (en) * | 1991-03-15 | 1992-10-01 | Asm Fico Tooling | METHOD AND APPARATUS FOR MANUFACTURING A SINGLE PRODUCT FROM INTEGRATED CIRCUITS INCLUDED ON A LEADFRAME |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57178352A (en) * | 1981-04-28 | 1982-11-02 | Matsushita Electronics Corp | Manufacture of resin sealing type semiconductor device and lead frame employed thereon |
-
1984
- 1984-10-16 JP JP21523584A patent/JPS6194349A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57178352A (en) * | 1981-04-28 | 1982-11-02 | Matsushita Electronics Corp | Manufacture of resin sealing type semiconductor device and lead frame employed thereon |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6194349A (en) | 1986-05-13 |
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