JPH0472221B2 - - Google Patents
Info
- Publication number
- JPH0472221B2 JPH0472221B2 JP60278368A JP27836885A JPH0472221B2 JP H0472221 B2 JPH0472221 B2 JP H0472221B2 JP 60278368 A JP60278368 A JP 60278368A JP 27836885 A JP27836885 A JP 27836885A JP H0472221 B2 JPH0472221 B2 JP H0472221B2
- Authority
- JP
- Japan
- Prior art keywords
- resist
- pattern
- formaldehyde
- negative resist
- heat resistance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 claims description 24
- 229920002120 photoresistant polymer Polymers 0.000 claims description 15
- 229920003986 novolac Polymers 0.000 claims description 14
- 229920000642 polymer Polymers 0.000 claims description 9
- 238000009833 condensation Methods 0.000 claims description 8
- 230000005494 condensation Effects 0.000 claims description 8
- 239000003960 organic solvent Substances 0.000 claims description 6
- YXVFYQXJAXKLAK-UHFFFAOYSA-N biphenyl-4-ol Chemical compound C1=CC(O)=CC=C1C1=CC=CC=C1 YXVFYQXJAXKLAK-UHFFFAOYSA-N 0.000 claims description 5
- QHPQWRBYOIRBIT-UHFFFAOYSA-N 4-tert-butylphenol Chemical compound CC(C)(C)C1=CC=C(O)C=C1 QHPQWRBYOIRBIT-UHFFFAOYSA-N 0.000 claims description 4
- -1 diazonaphthoquinone sulfonic acid compound Chemical class 0.000 claims description 3
- 150000002148 esters Chemical group 0.000 claims description 2
- 238000000034 method Methods 0.000 description 10
- 229920005989 resin Polymers 0.000 description 9
- 239000011347 resin Substances 0.000 description 9
- 239000000243 solution Substances 0.000 description 7
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 6
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 5
- 230000009477 glass transition Effects 0.000 description 5
- 230000005865 ionizing radiation Effects 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- MLFHJEHSLIIPHL-UHFFFAOYSA-N isoamyl acetate Chemical compound CC(C)CCOC(C)=O MLFHJEHSLIIPHL-UHFFFAOYSA-N 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- SVONRAPFKPVNKG-UHFFFAOYSA-N 2-ethoxyethyl acetate Chemical compound CCOCCOC(C)=O SVONRAPFKPVNKG-UHFFFAOYSA-N 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000008961 swelling Effects 0.000 description 3
- NAOAMSZZEPAPNP-UHFFFAOYSA-N 3-chlorosulfonyl-2-diazonio-4-oxo-3h-naphthalen-1-olate Chemical compound C1=CC=C2C(=O)C(=[N+]=[N-])C(S(=O)(=O)Cl)C(=O)C2=C1 NAOAMSZZEPAPNP-UHFFFAOYSA-N 0.000 description 2
- 238000005481 NMR spectroscopy Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 229940117955 isoamyl acetate Drugs 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N phenol group Chemical group C1(=CC=CC=C1)O ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 1
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229930003836 cresol Natural products 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 230000032050 esterification Effects 0.000 description 1
- 238000005886 esterification reaction Methods 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000006277 sulfonation reaction Methods 0.000 description 1
- 150000003459 sulfonic acid esters Chemical class 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
- G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
- G03F7/0236—Condensation products of carbonyl compounds and phenolic compounds, e.g. novolak resins
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Phenolic Resins Or Amino Resins (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27836885A JPS62136636A (ja) | 1985-12-10 | 1985-12-10 | ネガレジスト |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27836885A JPS62136636A (ja) | 1985-12-10 | 1985-12-10 | ネガレジスト |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62136636A JPS62136636A (ja) | 1987-06-19 |
| JPH0472221B2 true JPH0472221B2 (US20050075337A1-20050407-C00081.png) | 1992-11-17 |
Family
ID=17596365
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP27836885A Granted JPS62136636A (ja) | 1985-12-10 | 1985-12-10 | ネガレジスト |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62136636A (US20050075337A1-20050407-C00081.png) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5036206A (US20050075337A1-20050407-C00081.png) * | 1973-08-03 | 1975-04-05 | ||
| JPS50125806A (US20050075337A1-20050407-C00081.png) * | 1974-03-25 | 1975-10-03 | ||
| JPS54116218A (en) * | 1978-03-02 | 1979-09-10 | Oji Paper Co | Photosensitive composition |
-
1985
- 1985-12-10 JP JP27836885A patent/JPS62136636A/ja active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5036206A (US20050075337A1-20050407-C00081.png) * | 1973-08-03 | 1975-04-05 | ||
| JPS50125806A (US20050075337A1-20050407-C00081.png) * | 1974-03-25 | 1975-10-03 | ||
| JPS54116218A (en) * | 1978-03-02 | 1979-09-10 | Oji Paper Co | Photosensitive composition |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62136636A (ja) | 1987-06-19 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5019488A (en) | Method of producing an image reversal negative photoresist having a photo-labile blocked imide | |
| US4600683A (en) | Cross-linked polyalkenyl phenol based photoresist compositions | |
| US4980264A (en) | Photoresist compositions of controlled dissolution rate in alkaline developers | |
| JPS6155246B2 (US20050075337A1-20050407-C00081.png) | ||
| EP0361906A2 (en) | Method of producing an image reversal negative photoresist having a photo-labile blocked imide | |
| JP2935306B2 (ja) | 酸分解性化合物及びそれを含有するポジ型感放射線性レジスト組成物 | |
| JP3224602B2 (ja) | 感光性基材及びそれを用いたレジストパターン形成方法 | |
| JPS6180246A (ja) | ポジレジスト材料 | |
| US5221592A (en) | Diazo ester of a benzolactone ring compound and positive photoresist composition and element utilizing the diazo ester | |
| US4187205A (en) | Radiation-sensitive composition | |
| KR940007775B1 (ko) | 포지티브 감광성 내식막의 제조방법 | |
| JPH0683051A (ja) | 放射線に感光性の混合物のための増感剤としてのポリラクチド化合物 | |
| JPH0472221B2 (US20050075337A1-20050407-C00081.png) | ||
| TW541444B (en) | Photoresist compositions with pendant polar-functionalized aromatic groups and acid-labile branching | |
| JPH0157778B2 (US20050075337A1-20050407-C00081.png) | ||
| JP3632383B2 (ja) | 化学増幅型ポジ型レジスト用感放射線性樹脂組成物 | |
| EP0030107A1 (en) | Process for forming resist pattern | |
| JPH0547098B2 (US20050075337A1-20050407-C00081.png) | ||
| KR100300935B1 (ko) | 방사선 감수성 레지스트 조성물 | |
| JPH03253858A (ja) | パターン形成材料及びパターン形成方法 | |
| WO1993012468A1 (en) | Polyphosphazene binder resins for photoresists | |
| JPS6358338B2 (US20050075337A1-20050407-C00081.png) | ||
| JP3295453B2 (ja) | ロールコート用感放射線性樹脂溶液組成物 | |
| JPS58122531A (ja) | パタ−ン形成方法 | |
| JPS61296350A (ja) | 感光性組成物 |
