JPH0471349B2 - - Google Patents

Info

Publication number
JPH0471349B2
JPH0471349B2 JP59108931A JP10893184A JPH0471349B2 JP H0471349 B2 JPH0471349 B2 JP H0471349B2 JP 59108931 A JP59108931 A JP 59108931A JP 10893184 A JP10893184 A JP 10893184A JP H0471349 B2 JPH0471349 B2 JP H0471349B2
Authority
JP
Japan
Prior art keywords
semiconductor light
light emitting
emitting chip
ceramic plate
light source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59108931A
Other languages
Japanese (ja)
Other versions
JPS60253284A (en
Inventor
Masahiro Konishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Holdings Corp
Original Assignee
Fuji Photo Film Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Photo Film Co Ltd filed Critical Fuji Photo Film Co Ltd
Priority to JP59108931A priority Critical patent/JPS60253284A/en
Publication of JPS60253284A publication Critical patent/JPS60253284A/en
Publication of JPH0471349B2 publication Critical patent/JPH0471349B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64Heat extraction or cooling elements
    • H01L33/642Heat extraction or cooling elements characterized by the shape
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched

Description

【発明の詳細な説明】 (発明の技術分野) この発明は、画像出力装置等に使用する半導体
光源の温度特性を安定化することにより、その発
光量を自熱効果に対して一定とすることができる
半導体光源装置に関する。
[Detailed Description of the Invention] (Technical Field of the Invention) The present invention is directed to stabilizing the temperature characteristics of a semiconductor light source used in an image output device, etc., so that the amount of light emitted by the semiconductor light source is kept constant against self-heating effects. The present invention relates to a semiconductor light source device that can perform

(発明の技術的背景とその問題点) 第1図は半導体光源として広く用いられている
キヤンタイプ発光ダイオードの概略構成を示すも
のであり、半導体発光チツプ3が絶縁板4上に取
付けられて金属ケース1の中に固定されている。
そして、半導体発光チツプ3はリード線5Aを介
して金属ケース1の低部に取付けられているリー
ド端子5に接続され、リード端子5から電力を供
給したときに半導体発光チツプ3が発光され、そ
の光が金属ケース1の頂部に嵌合されているレン
ズ2により収束され外部に照射されるようになつ
ている。第2図はこのような発光ダイオードに電
流を加えたときの発光量の変化を示すもので、同
図Aに示すような短時間の矩形状電流パルスを
加えた場合、発光ダイオードの発光量Eは同図B
のように変化する。つまり、半導体発光チツプ3
に電流が供給されると自己発熱すると共に、半導
体発光チツプ3が負の温度特性をもつことから、
第2図Bのように発光量Eは次第に低下する。長
時間連続点灯していれば温度は安定したいくが、
画像出力装置のようにパルス電圧波形を加えて感
光材料を露光するような場合、光量の積分値で露
光量が決まることから、第2図Bのように途中か
らの発光量Eが低下してしまうと画像の出来上り
濃度に重大な影響が出てしまう。
(Technical background of the invention and its problems) Figure 1 shows a schematic configuration of a can type light emitting diode widely used as a semiconductor light source, in which a semiconductor light emitting chip 3 is mounted on an insulating plate 4 and a metal It is fixed inside case 1.
The semiconductor light emitting chip 3 is connected to a lead terminal 5 attached to the lower part of the metal case 1 via a lead wire 5A, and when power is supplied from the lead terminal 5, the semiconductor light emitting chip 3 emits light. Light is converged by a lens 2 fitted to the top of a metal case 1 and irradiated to the outside. Figure 2 shows the change in the amount of light emitted when a current is applied to such a light emitting diode.When a short rectangular current pulse as shown in figure A is applied, the amount of light emitted by the light emitting diode E is the same figure B
It changes like this. In other words, the semiconductor light emitting chip 3
Since the semiconductor light emitting chip 3 self-heats when a current is supplied to it and has negative temperature characteristics,
As shown in FIG. 2B, the amount of light emitted E gradually decreases. If the lights are turned on continuously for a long time, the temperature will be stable, but
When a photosensitive material is exposed to light by applying a pulse voltage waveform, as in an image output device, the exposure amount is determined by the integral value of the light amount, so the light emission amount E decreases from the middle as shown in Figure 2B. If it is stored away, the resulting density of the image will be seriously affected.

そこで、一般的には発光ダイオードキヤンの上
から円筒状の放熱フイン6を図示のように被せる
等の対策により、放熱効果を上げて半導体発光チ
ツプ3の温度上昇を少なくしようとしている。し
かしながら、半導体発光チツプ3と絶縁板4の部
分で既に熱抵抗は大きくなつてしまつているため
に放熱フイン6の効果は薄く、第2図Bの発光量
Eの低下はほとんど防ぐことが出来ず、画像出力
装置による仕上り画像の濃度については満足でき
るものが得られなかつた。
Therefore, it is generally attempted to increase the heat dissipation effect and reduce the temperature rise of the semiconductor light emitting chip 3 by covering the light emitting diode can with a cylindrical heat dissipating fin 6 as shown in the figure. However, since the thermal resistance has already increased between the semiconductor light emitting chip 3 and the insulating plate 4, the effect of the heat dissipation fins 6 is weak, and the decrease in the amount of light emitted E shown in FIG. 2B can hardly be prevented. However, the density of the finished image produced by the image output device was not satisfactory.

(発明の目的) この発明の目的は、半導体発光チツプを直接熱
容量の大きい金属に取付けて熱抵抗を小さくし、
半導体発光チツプの温度上昇を小さくすることに
より温度を早期の安定化して、画像出力装置等の
仕上り画像の色調を完全なものにするために最適
な半導体光源装置を提供することにある。
(Object of the invention) The object of the invention is to directly attach a semiconductor light emitting chip to a metal with a large heat capacity to reduce thermal resistance.
An object of the present invention is to provide a semiconductor light source device which is optimal for stabilizing the temperature at an early stage by reducing the temperature rise of a semiconductor light emitting chip and perfecting the color tone of a finished image of an image output device or the like.

(発明の概要) この発明は画像出力装置等に用いられる半導体
光源装置に関するもので、円筒形状ケースと、こ
のケースの頂部に設けられたレンズと、頂部に半
導体発光チツプが装着されると共に半導体発光チ
ツプの一つの電極リードを兼ねる金属フインと、
この金属フインを支持するセラミツクス板とから
成り、上記セラミツクス板が上記円筒形状ケース
内に取着されていることにより、熱抵抗を小さく
し、半導体発光チツプの発光時の温度特性を安定
させるようにしたものである。
(Summary of the Invention) The present invention relates to a semiconductor light source device used in an image output device, etc., which includes a cylindrical case, a lens provided on the top of the case, a semiconductor light emitting chip mounted on the top, and a semiconductor light source device. A metal fin that also serves as one electrode lead of the chip,
and a ceramic plate that supports the metal fin, and the ceramic plate is installed inside the cylindrical case to reduce thermal resistance and stabilize the temperature characteristics of the semiconductor light emitting chip during light emission. This is what I did.

(発明の実施例) この発明の半導体光源装置は第3図に示すよう
に、半導体発光チツプ3が円板の裏面に電極柱7
Aを立設されている金属フイン7の上面に装着さ
れ、この金属フイン7は円板状のセラミツクス板
8に嵌着されている。金属フイン7は銅、白銅、
金等の熱伝導性が良く、伝導性のよい材料で形成
されており、セラミツクス板8はセラミツクスの
熱伝導性が良く、電気的には絶縁である特性を有
しており、セラミツクス板8の表面(半導体発光
チツプ3側)は黒色に着色されている。そして、
半導体発光チツプ3と電極柱7Aにはそれぞれリ
ード線9A及び9Bが接続されており、リード線
9A及び9Bに電位差を与えることにより半導体
発光チツプ3が所定の色には発光するようになつ
ている。また、セラミツクス板8は円筒形状をし
た内面がネジピツチ10Aに螺刻されたケース1
0内に収められ、ネジピツチ10Aの終端に設け
られているストツパ11で支えられると共に、ネ
ジピツチ10Aに螺合するリング状のリングネジ
12で裏面を支持させている。なお、半導体発光
チツプ3で発光された光は、ケース10に設けら
れているレンズ(図示せず)によつて収束される
ようになつており、リード線9A及び9Bはリー
ド端子(図示せず)に接続されている。
(Embodiment of the Invention) As shown in FIG. 3, the semiconductor light source device of the present invention has a semiconductor light emitting chip 3 on the back surface of a disk and an electrode pillar 7.
A is attached to the upper surface of a metal fin 7 which is erected, and this metal fin 7 is fitted onto a disc-shaped ceramic plate 8. The metal fin 7 is made of copper, cupronickel,
The ceramic plate 8 is made of a material with good thermal conductivity such as gold, and has good thermal conductivity and is electrically insulating. The surface (semiconductor light emitting chip 3 side) is colored black. and,
Lead wires 9A and 9B are connected to the semiconductor light emitting chip 3 and the electrode column 7A, respectively, and by applying a potential difference to the lead wires 9A and 9B, the semiconductor light emitting chip 3 emits light in a predetermined color. . In addition, the ceramic plate 8 has a cylindrical inner surface which is threaded into a case 1 with screw pitches 10A.
0 and is supported by a stopper 11 provided at the end of the screw pitch 10A, and the back surface is supported by a ring-shaped ring screw 12 screwed into the screw pitch 10A. Note that the light emitted by the semiconductor light emitting chip 3 is converged by a lens (not shown) provided in the case 10, and the lead wires 9A and 9B are connected to lead terminals (not shown). )It is connected to the.

このような構成において、電極を兼ねる金属フ
イン7は大きな熱容量をもち、またセラミツクス
板8は電気絶縁対が良いうえに良熱伝導体であ
り、セラミツクス板8がケース10に収納されて
いることから、半導体発光チツプ3からケースに
至るまでの熱抵抗を小さくおさえることができ
る。このため第4図に示すように、同図Aの一定
電流のパルス信号に対して発光量Eは同図Bの
ようにほぼ一定なものとなる。これは、半導体発
光チツプ3が発光して温度上昇しようとしても、
熱伝導体の良い金属フイン7及びセラミツクス板
8によつて吸収されてしまい、温度が安定化する
ためである。また、セラミツクス板8の表面は黒
色に着色されているので、反射光が少なく、半導
体発光チツプ3からの光の収束効果を上げること
ができる。
In such a configuration, the metal fins 7 that also serve as electrodes have a large heat capacity, and the ceramic plate 8 has good electrical insulation and is a good thermal conductor, and the ceramic plate 8 is housed in the case 10. , the thermal resistance from the semiconductor light emitting chip 3 to the case can be kept low. Therefore, as shown in FIG. 4, the amount of light emitted E becomes approximately constant as shown in FIG. 4B in response to the constant current pulse signal shown in FIG. 4A. This means that even if the semiconductor light emitting chip 3 emits light and tries to rise in temperature,
This is because the heat is absorbed by the metal fins 7 and the ceramic plate 8, which are good heat conductors, and the temperature becomes stable. Further, since the surface of the ceramic plate 8 is colored black, there is less reflected light, and the effect of converging light from the semiconductor light emitting chip 3 can be improved.

ここで、金属フイン7の材質としては熱伝導の
良いものであればある程良く、又各寸法も出来る
だけ大きくとることによりさらに効果を増すこと
ができる。そして、セラミツクス板8は半導体発
光チツプ3とケース10を電気的に絶縁する必要
があり、併せて熱伝導性も良い材質ということか
らセラミツクス材料が選定されている。さらに、
このセラミツクスは容易に着色も可能であるの
で、たとえば黒色に着色しておくことにより反射
光を少なくできる利点を有している。なお、上述
では金属フイン7の上に1つの半導体発光チツプ
3を装着する例を示したが、第5図に示すように
たとえば4個のチツプ3A〜3Dに分割して装着
するようにしても良い。この場合、各チツプ3A
〜3Dにリード線を接続して直列又は並列に発光
することになるが、放熱効果は一層向上する。ま
た、1チツプを複数個に分割するのではなく、複
数個の半導体発光チツプを金属フイン7に装着し
て光源装置を構成すれば、より発光量の多い光源
を実現できる。さらに、金属フイン7の形状は
種々変更することができ、上部に半導体発光チツ
プを装着できるセラミツクス板に取付可能なもの
であればよい。
Here, the material of the metal fins 7 is better as long as it has good thermal conductivity, and the effect can be further enhanced by making each dimension as large as possible. Ceramic material is selected for the ceramic plate 8 because it is necessary to electrically insulate the semiconductor light emitting chip 3 and the case 10, and it also has good thermal conductivity. moreover,
Since this ceramic can be easily colored, it has the advantage that reflected light can be reduced by coloring it black, for example. In the above, an example was shown in which one semiconductor light emitting chip 3 is mounted on the metal fin 7, but as shown in FIG. good. In this case, each chip 3A
~3D lead wires are connected to emit light in series or parallel, but the heat dissipation effect is further improved. Moreover, if a light source device is constructed by attaching a plurality of semiconductor light emitting chips to the metal fin 7 instead of dividing one chip into a plurality of chips, a light source with a larger amount of light emission can be realized. Further, the shape of the metal fins 7 can be changed in various ways, as long as they can be attached to a ceramic plate on which a semiconductor light emitting chip can be attached.

(発明の効果) 以上のようにこの発明の光源装置によれば、半
導体発光チツプに対して直接的な放熱を行なうよ
うにしているので、短時間の一定電流パルスが入
力されたときにも発光量を安定化することができ
る。このため、画像出力装置等による仕上り画像
の濃度を完全なものとすることができ、高性能画
像出力装置を提供することが可能となる。
(Effects of the Invention) As described above, according to the light source device of the present invention, heat is directly radiated to the semiconductor light emitting chip, so it emits light even when a short constant current pulse is input. The amount can be stabilized. Therefore, the density of the finished image produced by the image output device or the like can be made perfect, making it possible to provide a high-performance image output device.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は従来の発光ダイオードの概略構造の一
例を示す断面構造図、第2図A及びBは従来の発
光ダイオードに電流を印加したときの発光量応答
例を説明するための図、第3図はこの発明の一実
施例を示す断面構造図、第4図はこの発明の半導
体光源に電流を印加したときの発光量の応答の例
を示す図、第5図は半導体発光チツプの一改善例
を示す図である。 1…金属ケース、2…レンズ、3…半導体発光
チツプ、4…絶縁板、5…リード線、6…放熱フ
イン、7…金属フイン、8…セラミツクス板、9
A,9B…リード線、10…ケース、11…スト
ツパ。
FIG. 1 is a cross-sectional structure diagram showing an example of the schematic structure of a conventional light emitting diode, FIGS. 2A and B are diagrams for explaining an example of the light emission amount response when a current is applied to the conventional light emitting diode, and FIG. Figure 4 is a cross-sectional structural diagram showing one embodiment of the present invention, Figure 4 is a diagram showing an example of the response of the amount of light emitted when a current is applied to the semiconductor light source of the present invention, and Figure 5 is an improvement of the semiconductor light emitting chip. It is a figure which shows an example. DESCRIPTION OF SYMBOLS 1...Metal case, 2...Lens, 3...Semiconductor light emitting chip, 4...Insulating plate, 5...Lead wire, 6...Radiating fin, 7...Metal fin, 8...Ceramics plate, 9
A, 9B...Lead wire, 10...Case, 11...Stopper.

Claims (1)

【特許請求の範囲】 1 円筒形状ケースと、このケースの頂部に設け
られたレンズと、頂部に半導体発光チツプが装着
されると共に前記半導体発光チツプの一つの電極
リードを兼ねる金属フインと、この金属フインを
支持するセラミツクス板とから成り、前記セラミ
ツクス板が前記円筒形状ケース内に取着されてい
ることを特徴とする半導体光源装置。 2 前記半導体発光チツプが複数個に分離されて
設けられている特許請求の範囲第1項に記載の半
導体光源装置。 3 前記セラミツクス板の表面を黒色に着色した
特許請求の範囲第1項又は第2項に記載の半導体
光源装置。
[Scope of Claims] 1. A cylindrical case, a lens provided on the top of the case, a metal fin on which a semiconductor light emitting chip is mounted and also serving as one electrode lead of the semiconductor light emitting chip, and this metal 1. A semiconductor light source device comprising: a ceramic plate supporting a fin, the ceramic plate being mounted within the cylindrical case. 2. The semiconductor light source device according to claim 1, wherein the semiconductor light emitting chip is separated into a plurality of pieces. 3. The semiconductor light source device according to claim 1 or 2, wherein the surface of the ceramic plate is colored black.
JP59108931A 1984-05-29 1984-05-29 Semiconductor light source device Granted JPS60253284A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59108931A JPS60253284A (en) 1984-05-29 1984-05-29 Semiconductor light source device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59108931A JPS60253284A (en) 1984-05-29 1984-05-29 Semiconductor light source device

Publications (2)

Publication Number Publication Date
JPS60253284A JPS60253284A (en) 1985-12-13
JPH0471349B2 true JPH0471349B2 (en) 1992-11-13

Family

ID=14497282

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59108931A Granted JPS60253284A (en) 1984-05-29 1984-05-29 Semiconductor light source device

Country Status (1)

Country Link
JP (1) JPS60253284A (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2751576B2 (en) * 1990-06-14 1998-05-18 日立電線株式会社 Light emitting diode / microchip mounting method
JP2002223007A (en) * 2000-11-22 2002-08-09 Matsushita Electric Ind Co Ltd Light source unit and semiconductor light emitting illumination device using the same
US6481874B2 (en) * 2001-03-29 2002-11-19 Gelcore Llc Heat dissipation system for high power LED lighting system
JP4740682B2 (en) * 2005-08-01 2011-08-03 三菱電機株式会社 LED lighting device

Also Published As

Publication number Publication date
JPS60253284A (en) 1985-12-13

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