JPH0469414B2 - - Google Patents

Info

Publication number
JPH0469414B2
JPH0469414B2 JP59013251A JP1325184A JPH0469414B2 JP H0469414 B2 JPH0469414 B2 JP H0469414B2 JP 59013251 A JP59013251 A JP 59013251A JP 1325184 A JP1325184 A JP 1325184A JP H0469414 B2 JPH0469414 B2 JP H0469414B2
Authority
JP
Japan
Prior art keywords
electrode
bias
plasma
high frequency
microwave
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP59013251A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60158629A (ja
Inventor
Noriaki Yamamoto
Fumio Shibata
Norio Kanai
Sadayuki Okudaira
Shigeru Nishimatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP59013251A priority Critical patent/JPS60158629A/ja
Publication of JPS60158629A publication Critical patent/JPS60158629A/ja
Publication of JPH0469414B2 publication Critical patent/JPH0469414B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P50/00

Landscapes

  • Drying Of Semiconductors (AREA)
JP59013251A 1984-01-30 1984-01-30 マイクロ波プラズマ処理装置 Granted JPS60158629A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59013251A JPS60158629A (ja) 1984-01-30 1984-01-30 マイクロ波プラズマ処理装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59013251A JPS60158629A (ja) 1984-01-30 1984-01-30 マイクロ波プラズマ処理装置

Publications (2)

Publication Number Publication Date
JPS60158629A JPS60158629A (ja) 1985-08-20
JPH0469414B2 true JPH0469414B2 (member.php) 1992-11-06

Family

ID=11827987

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59013251A Granted JPS60158629A (ja) 1984-01-30 1984-01-30 マイクロ波プラズマ処理装置

Country Status (1)

Country Link
JP (1) JPS60158629A (member.php)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2680065B2 (ja) * 1988-09-22 1997-11-19 株式会社日立製作所 プラズマクリーニング方法
JP3542514B2 (ja) * 1999-01-19 2004-07-14 株式会社日立製作所 ドライエッチング装置

Also Published As

Publication number Publication date
JPS60158629A (ja) 1985-08-20

Similar Documents

Publication Publication Date Title
US6499424B2 (en) Plasma processing apparatus and method
US5433812A (en) Apparatus for enhanced inductive coupling to plasmas with reduced sputter contamination
US5432315A (en) Plasma process apparatus including ground electrode with protection film
US5290993A (en) Microwave plasma processing device
KR19990028399A (ko) 유도 결합 플라즈마 소스를 위한 저 인덕턴스 대면적 코일
JPH0770532B2 (ja) プラズマ処理装置
KR960026342A (ko) 플라즈마처리 장치와 플라즈마처리 방법
JP3254069B2 (ja) プラズマ装置
US6909086B2 (en) Neutral particle beam processing apparatus
JP3646901B2 (ja) プラズマ励起用アンテナ、プラズマ処理装置
JPS63155728A (ja) プラズマ処理装置
JPS60154620A (ja) マイクロ波プラズマ処理方法及び装置
JPH0469414B2 (member.php)
JPH1140544A (ja) 反応性イオンエッチング装置
JPH0774115A (ja) プラズマ処理装置
JP3172757B2 (ja) プラズマ処理装置
JP2001284333A5 (member.php)
JP4640939B2 (ja) プラズマ処理装置およびプラズマ処理方法
JP2004006109A (ja) イオンビーム処理装置
JPH0252855B2 (member.php)
JPH08225967A (ja) 磁気中性線放電プラズマ処理装置
JP4527833B2 (ja) プラズマ処理装置および方法
JPH08316205A (ja) プラズマ処理方法及びプラズマ処理装置
KR100753869B1 (ko) 복합형 플라즈마 반응기
JPH07258844A (ja) 磁気中性線放電プラズマを利用した成膜装置