JPH0468276B2 - - Google Patents

Info

Publication number
JPH0468276B2
JPH0468276B2 JP31426286A JP31426286A JPH0468276B2 JP H0468276 B2 JPH0468276 B2 JP H0468276B2 JP 31426286 A JP31426286 A JP 31426286A JP 31426286 A JP31426286 A JP 31426286A JP H0468276 B2 JPH0468276 B2 JP H0468276B2
Authority
JP
Japan
Prior art keywords
mold
furnace
water
ingot
chill plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP31426286A
Other languages
English (en)
Japanese (ja)
Other versions
JPS63166711A (ja
Inventor
Kyojiro Kaneko
Naohiro Takaoka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Osaka Titanium Co Ltd
Original Assignee
Osaka Titanium Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osaka Titanium Co Ltd filed Critical Osaka Titanium Co Ltd
Priority to JP31426286A priority Critical patent/JPS63166711A/ja
Publication of JPS63166711A publication Critical patent/JPS63166711A/ja
Publication of JPH0468276B2 publication Critical patent/JPH0468276B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
JP31426286A 1986-12-26 1986-12-26 多結晶シリコン鋳塊の製造法 Granted JPS63166711A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP31426286A JPS63166711A (ja) 1986-12-26 1986-12-26 多結晶シリコン鋳塊の製造法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP31426286A JPS63166711A (ja) 1986-12-26 1986-12-26 多結晶シリコン鋳塊の製造法

Publications (2)

Publication Number Publication Date
JPS63166711A JPS63166711A (ja) 1988-07-09
JPH0468276B2 true JPH0468276B2 (enExample) 1992-10-30

Family

ID=18051235

Family Applications (1)

Application Number Title Priority Date Filing Date
JP31426286A Granted JPS63166711A (ja) 1986-12-26 1986-12-26 多結晶シリコン鋳塊の製造法

Country Status (1)

Country Link
JP (1) JPS63166711A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103215633A (zh) * 2013-04-10 2013-07-24 衡水英利新能源有限公司 一种多晶硅的铸锭方法
CN103797164A (zh) * 2011-09-14 2014-05-14 Memc新加坡私人有限公司 具有可移动式热交换器的定向固化炉

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4675550B2 (ja) * 2003-04-28 2011-04-27 三菱マテリアル株式会社 一方向凝固シリコンインゴット及びこの製造方法並びにシリコン板及び太陽電池用基板
US7867334B2 (en) 2004-03-29 2011-01-11 Kyocera Corporation Silicon casting apparatus and method of producing silicon ingot
JP4766882B2 (ja) * 2005-02-08 2011-09-07 新日鉄マテリアルズ株式会社 シリコン凝固精製装置及び凝固精製方法
FR2895749B1 (fr) * 2006-01-04 2008-05-02 Apollon Solar Soc Par Actions Dispositif et procede de fabrication d'un bloc de materiau cristallin
KR100861412B1 (ko) 2006-06-13 2008-10-07 조영상 다결정 실리콘 잉곳 제조장치
US8057598B2 (en) 2006-06-13 2011-11-15 Young Sang Cho Manufacturing equipment for polysilicon ingot
JP4501992B2 (ja) * 2007-11-16 2010-07-14 三菱マテリアル株式会社 鋳造装置
TW200932963A (en) * 2008-01-29 2009-08-01 Green Energy Technology Inc Crystal growing furnace with heating improvement structure
KR100947836B1 (ko) * 2009-09-28 2010-03-18 (주)세미머티리얼즈 실리콘 잉곳 제조장치
TWI432617B (zh) * 2011-07-12 2014-04-01 Sino American Silicon Prod Inc 長晶裝置
CN103890242B (zh) * 2011-08-01 2018-05-08 Gtat公司 液体冷却热交换器

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103797164A (zh) * 2011-09-14 2014-05-14 Memc新加坡私人有限公司 具有可移动式热交换器的定向固化炉
CN103215633A (zh) * 2013-04-10 2013-07-24 衡水英利新能源有限公司 一种多晶硅的铸锭方法

Also Published As

Publication number Publication date
JPS63166711A (ja) 1988-07-09

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