JPH0467658A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPH0467658A JPH0467658A JP2179624A JP17962490A JPH0467658A JP H0467658 A JPH0467658 A JP H0467658A JP 2179624 A JP2179624 A JP 2179624A JP 17962490 A JP17962490 A JP 17962490A JP H0467658 A JPH0467658 A JP H0467658A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor element
- chip
- insulating film
- metal
- wiring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 35
- 238000005096 rolling process Methods 0.000 claims description 2
- 239000002184 metal Substances 0.000 abstract description 31
- 239000011347 resin Substances 0.000 abstract description 15
- 229920005989 resin Polymers 0.000 abstract description 15
- 238000000034 method Methods 0.000 abstract description 9
- 239000011888 foil Substances 0.000 abstract description 7
- 239000002470 thermal conductor Substances 0.000 abstract description 7
- 239000000853 adhesive Substances 0.000 abstract description 4
- 230000002093 peripheral effect Effects 0.000 abstract 1
- 230000017525 heat dissipation Effects 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 230000001070 adhesive effect Effects 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 230000005855 radiation Effects 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/50—Tape automated bonding [TAB] connectors, i.e. film carriers; Manufacturing methods related thereto
Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の目的〕
（産業上の利用分野）
本発明は、半導体装置に係わり、特に半導体素子の放熱
特性とＩＣチップの実装方法を改善した半導体装置に関
する。DETAILED DESCRIPTION OF THE INVENTION [Object of the Invention] (Industrial Application Field) The present invention relates to a semiconductor device, and more particularly to a semiconductor device with improved heat dissipation characteristics of a semiconductor element and an IC chip mounting method.
（従来の技術）
近年、半導体集積回路の集積化が進み、非常に多数のデ
バイスがＩＣチップに形成されるようになってきた。(Prior Art) In recent years, the integration of semiconductor integrated circuits has progressed, and a large number of devices have come to be formed on an IC chip.
このうちの一つの実装方法として、ＴＡＢ（Ｔａｐｅ
Ａｕｔｏｍａｔｅｄ Ｂｏｎｄｉｎｇ）技術による方法
が提唱され、この技術に対する開発が盛んに行われてい
る。 このＴＡＢ技術とは次のような方法を用いる技術
である。すなわち、まずフレキシブルな樹脂フィルムの
上に多数の金属配線層を形成するとともに、ＩＣチップ
の入出力部に突起電極（バンプ）を形成する。次に、こ
の突起電極を前記金属配線層と接続せしめ、ＩＣチップ
の実装を行う。One of these implementation methods is TAB (Tape
A method using automated bonding (Automated Bonding) technology has been proposed, and development of this technology is actively underway. This TAB technology is a technology that uses the following method. That is, first, a large number of metal wiring layers are formed on a flexible resin film, and protruding electrodes (bumps) are formed at the input/output portions of the IC chip. Next, this protruding electrode is connected to the metal wiring layer, and an IC chip is mounted.
しかしながら、ＴＡＢ技術を用いた装置には次のような
問題があった。すなわち、一般にフィル熱を放散させる
ことができない。このため、半導体素子の温度が上昇し
、半導体素子の高動作速度を得る上で問題が生じていた
。However, devices using TAB technology have the following problems. That is, fill heat generally cannot be dissipated. As a result, the temperature of the semiconductor device increases, creating a problem in achieving high operating speed of the semiconductor device.
（発明が解決しようとする課題）
このように従来の半導体装置は、熱の放散を十分に行う
ことができず、このため半導体素子の高動作速度を得る
上で問題が生じていた。(Problems to be Solved by the Invention) As described above, conventional semiconductor devices are unable to sufficiently dissipate heat, which causes problems in obtaining high operating speeds of semiconductor elements.
即ち本発明は上記実情に鑑みてなされたものであり、熱
の放散を十分に行える半導体装置を提供することを目的
とする。That is, the present invention has been made in view of the above circumstances, and an object of the present invention is to provide a semiconductor device that can sufficiently dissipate heat.
（課題を解決するための手段）
即ち本発明は熱伝導性部材と、この熱伝導性部材上に設
けられた半導体素子と、絶縁フィルム上に一端部が前記
半導体素子と接続して設けられた配線と、前記絶縁フィ
ルムに設けられた穴を通して前記絶縁フィルムを前記熱
伝導性部材に取付ける取付部材とを備えたことを特徴と
する半導体装置を提供するものである。(Means for Solving the Problems) That is, the present invention includes a thermally conductive member, a semiconductor element provided on the thermally conductive member, and an insulating film provided on an insulating film with one end connected to the semiconductor element. The present invention provides a semiconductor device comprising wiring and a mounting member for attaching the insulating film to the thermally conductive member through a hole provided in the insulating film.
（作 用）
本発明によれば、ＴＡＢ実装基板に熱伝導性部材を結合
させるため、機械的強度の点で信頼性が優れ、前記半導
体素子で発生する熱を前記熱伝導性部材を通じて放散し
、前記半導体素子の温度上昇を抑制することができる。(Function) According to the present invention, since the thermally conductive member is bonded to the TAB mounting board, reliability is excellent in terms of mechanical strength, and heat generated in the semiconductor element is dissipated through the thermally conductive member. , temperature rise of the semiconductor element can be suppressed.
従って、前記半導体素子の動作速度を高く保持し高動作
速度を得ることができる。Therefore, the operating speed of the semiconductor element can be maintained high and a high operating speed can be obtained.
（実施例）
以下本発明による半導体装置の詳細を実施例により説明
する。(Example) The details of the semiconductor device according to the present invention will be explained below with reference to an example.
第１図は本発明による半導体装置の一実施例の構成を示
す斜視図、第２図は第１図の線分ＡＡで切った断面を側
面から見た断面図である。FIG. 1 is a perspective view showing the structure of an embodiment of a semiconductor device according to the present invention, and FIG. 2 is a sectional view taken along line AA in FIG. 1, viewed from the side.
これらの図に示すように、ポリイミド等の可撓性樹脂フ
ィルム１には穴１ａが４つ対称に開口されており、樹脂
フィルム１上面に導電層として金属箔配線（リード配線
）２が形成される。ここで、樹脂フィルム１はこの導体
層の支持体として作用する。また、樹脂フィルム１と金
属箔配線２はフィルムキャリア３を構成する。この樹脂
フィルムｌの材料には、後に行われる曲げ工程に支障が
ないように、フレキシブルな性質を有する材料が用いら
れる。As shown in these figures, a flexible resin film 1 made of polyimide or the like has four holes 1a symmetrically opened, and metal foil wiring (lead wiring) 2 is formed as a conductive layer on the upper surface of the resin film 1. Ru. Here, the resin film 1 acts as a support for this conductor layer. Further, the resin film 1 and the metal foil wiring 2 constitute a film carrier 3. The resin film 1 is made of a flexible material so as not to interfere with the subsequent bending process.
樹脂フィルムｌの中央部には正方形の開口部４が形成さ
れ、金属箔配線２の一部は開口部４内に突出し、突出部
として舌片形電極（インナーリード） ２ａを構成する
。A square opening 4 is formed in the center of the resin film 1, and a portion of the metal foil wiring 2 protrudes into the opening 4, forming a tongue-shaped electrode (inner lead) 2a as a protrusion.
また、樹脂フィルムｌの裏面には開口部４を囲むように
表面側の金属箔配＃Ｉ２とコプレナ構造を構成する接地
された金属層５が形成される。Further, a grounded metal layer 5 forming a coplanar structure with the metal foil arrangement #I2 on the front side is formed on the back side of the resin film 1 so as to surround the opening 4.
開口部４の内部には集積回路が形成されるＩＣチップ６
が設置される。また、ＩＣチップ６の上面外周部には前
記半導体素子への入出力のための電極パッドが形成され
、この電極パッドはインナーリード２ａに接合金属バン
プ７を介して接続される。Inside the opening 4 is an IC chip 6 on which an integrated circuit is formed.
will be installed. Moreover, electrode pads for inputting and outputting to the semiconductor element are formed on the outer periphery of the upper surface of the IC chip 6, and these electrode pads are connected to the inner leads 2a via bonding metal bumps 7.
一方、ＩＣチップ６の裏面には接着剤８を介して熱伝導
体例えばＣｕを主成分とする金属片９が取り付けられる
。この金属片９の上面には突起部９ａが前述した樹脂フ
ィルム１の穴１ａの位置に対応して設けられており、こ
の突起部９ａが１８に挿入された後、押しつぶされるこ
とにより、金属片９が強固にＩＣフィルムキャリア３に
結合される。接着剤８は金属層５の裏面にも設けてよい
。On the other hand, a thermal conductor, for example, a metal piece 9 whose main component is Cu, is attached to the back surface of the IC chip 6 via an adhesive 8. A protrusion 9a is provided on the upper surface of this metal piece 9, corresponding to the position of the hole 1a of the resin film 1 described above, and after this protrusion 9a is inserted into 18, it is crushed and the metal piece 9 is firmly coupled to the IC film carrier 3. The adhesive 8 may also be provided on the back surface of the metal layer 5.
また一方、金属片９の裏面にも突起部９ｂが形成されて
いる。この金属片９の下部には円板を重ねた形状のＡｌ
ｉ！よりなる放熱フィン１０が設置され、この放熱フィ
ン１０に設けられる凹部１０ａに前記突起部９ｂを嵌合
することにより、放熱フィン１０の金属片９の裏面への
固定が可能となる。On the other hand, a protrusion 9b is also formed on the back surface of the metal piece 9. At the bottom of this metal piece 9 is an Al plate in the shape of stacked disks.
i! A heat dissipation fin 10 is installed, and by fitting the protrusion 9b into a recess 10a provided in the heat dissipation fin 10, it becomes possible to fix the heat dissipation fin 10 to the back surface of the metal piece 9.
この構造を有する半導体装置であれば、熱伝導体９とフ
ィルムキャリア３との結合を容易ならしめるとともに、
半導体素子で発生する熱を熱伝導体９を通じて効果的に
放散させることができ、半導体素子の高動作速度を保つ
ことができる。A semiconductor device having this structure facilitates the bonding between the thermal conductor 9 and the film carrier 3, and
Heat generated in the semiconductor element can be effectively dissipated through the heat conductor 9, and the high operating speed of the semiconductor element can be maintained.
第３図は本発明による半導体装置の他の実施例の構成を
示す断面図である。この図において第１図及び第２図と
同一の部分には同一の符号を符して示し詳細な説明を省
略する。FIG. 3 is a sectional view showing the structure of another embodiment of the semiconductor device according to the present invention. In this figure, the same parts as in FIGS. 1 and 2 are denoted by the same reference numerals and detailed explanations will be omitted.
この図に示すように、熱伝導体としての金属片３１には
、これを貫通する穴３２が設けられる。この穴３２内に
全長が金属片３１の厚みより長い接続用金属棒３３を通
すことにより突起部３３ａ、 ３３ｂが形成され、この
突起部３３ａ、 ３３ｂはそれぞれ先の実施例と同様に
フィルムキャリア３及び放熱フィンエ０への取り付けに
用いられる。As shown in this figure, a metal piece 31 serving as a heat conductor is provided with a hole 32 passing through it. Protrusions 33a and 33b are formed by passing the connecting metal rod 33 whose total length is longer than the thickness of the metal piece 31 into this hole 32, and these protrusions 33a and 33b are connected to the film carrier 3, respectively, as in the previous embodiment. and is used for attachment to the heat radiation fin 0.
なお、本発明は上記実施例に限定されるものではない６
例えば放熱フィンの形状は放熱を促進するものであれば
何でもよく、例えば櫛形のものや多数の突起を有するも
のでもよい。It should be noted that the present invention is not limited to the above embodiments6.
For example, the heat dissipation fins may have any shape as long as it promotes heat dissipation, such as a comb shape or one having a large number of protrusions.
また、樹脂フィルム１の金属片９への取付方法は前記突
起部を圧延する方法の他、穴１ａを介して両者をねじ止
めする方法であってもよい。Further, the method of attaching the resin film 1 to the metal piece 9 may be a method of rolling the protrusion, or a method of screwing the two together through the hole 1a.
また、金属箔２を樹脂フィルム１上の信号が乗らない部
位に残しておき、樹脂フィルム１と共に加工して穴１ａ
を形成する事も可能である。In addition, the metal foil 2 is left on the part of the resin film 1 where the signal does not pass, and is processed together with the resin film 1 to form the hole 1a.
It is also possible to form
その化１本発明の主旨を逸脱しない範囲で種々変形して
実施することができる。The present invention can be modified and implemented in various ways without departing from the spirit of the present invention.
以上述べたように本発明によれば、熱の放散に用いるた
めの熱伝導体を半導体素子に負担をかけずに取り付ける
ことができ、この熱伝導体を通じて熱を放散させること
により、半導体素子の動作速度を高く保つことができる
。As described above, according to the present invention, a thermal conductor used for dissipating heat can be attached without placing a burden on a semiconductor element, and by dissipating heat through this thermal conductor, the semiconductor element can be heated. Operation speed can be kept high.
第１図は本発明による半導体装置の一実施例の構成を示
す斜視図、第２図は第１図の線分ＡＡの断面図、第３図
は本発明による半導体装置の他の実施例の構成を示す断
面図である。
図において、
１・・・樹脂フィルム １ａ・・・穴、２・・・金属箔
配線。
２ａ・・・舌片形電極（インナーリード）、３・・・フ
ィルムキャリア、
４・・・開口部、 ５・・・金属層、６・・・ＩＣ
チップ、 ７・・・接合金属バンプ、８・・・接着剤
、 ９，３１・・・金属片（熱伝導体）、９ａ、
９ｂ・・・突起部、 １０・・・放熱フィン、１０ａ
・・・凹部、 ３２・・・穴、３３・・・接続用
金属棒、３３ａ、 ３３ｂ・・・突起部。
代理人 弁理士 則 近 憲 佑
ａ
第 ２ 図
第 １ 図FIG. 1 is a perspective view showing the configuration of one embodiment of the semiconductor device according to the present invention, FIG. 2 is a sectional view taken along line AA in FIG. 1, and FIG. FIG. 3 is a cross-sectional view showing the configuration. In the figure, 1...resin film 1a...hole, 2...metal foil wiring. 2a... Tongue-shaped electrode (inner lead), 3... Film carrier, 4... Opening, 5... Metal layer, 6... IC
Chip, 7... Bonding metal bump, 8... Adhesive, 9, 31... Metal piece (thermal conductor), 9a,
9b... Protrusion, 10... Radiation fin, 10a
... recess, 32 ... hole, 33 ... metal rod for connection, 33a, 33b ... protrusion. Agent Patent Attorney Noriyuki Chika Figure 2 Figure 1
Claims (2)
た半導体素子と、絶縁フィルム上に一端部が前記半導体
素子と接続して設けられた配線と、前記絶縁フィルムに
設けられた穴を通して前記絶縁フィルムを前記熱伝導性
部材に取付ける取付部材とを備えたことを特徴とする半
導体装置。(1) A thermally conductive member, a semiconductor element provided on the thermally conductive member, a wiring provided on an insulating film with one end connected to the semiconductor element, and a wiring provided on the insulating film. A semiconductor device comprising: a mounting member for mounting the insulating film to the thermally conductive member through a hole.
部の頭部を圧延したもの或いは取付ねじよりなることを
特徴とする請求項（１）記載の半導体装置。(2) The semiconductor device according to claim 1, wherein the mounting member is formed by rolling the head of a protrusion provided on the conductive member or is a mounting screw.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2179624A JPH0467658A (en) | 1990-07-09 | 1990-07-09 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2179624A JPH0467658A (en) | 1990-07-09 | 1990-07-09 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0467658A true JPH0467658A (en) | 1992-03-03 |
Family
ID=16069023
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2179624A Pending JPH0467658A (en) | 1990-07-09 | 1990-07-09 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0467658A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0678917A1 (en) * | 1994-04-22 | 1995-10-25 | Nec Corporation | Supporting member for cooling means and electronic package using the same |
| EP0683517A3 (en) * | 1994-05-09 | 1997-04-02 | Nec Corp | Semiconductor device having semiconductor chip bonded to circuit board through bumps and process of mounting thereof. |
-
1990
- 1990-07-09 JP JP2179624A patent/JPH0467658A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0678917A1 (en) * | 1994-04-22 | 1995-10-25 | Nec Corporation | Supporting member for cooling means and electronic package using the same |
| EP0683517A3 (en) * | 1994-05-09 | 1997-04-02 | Nec Corp | Semiconductor device having semiconductor chip bonded to circuit board through bumps and process of mounting thereof. |
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