JPH0466100B2 - - Google Patents

Info

Publication number
JPH0466100B2
JPH0466100B2 JP59236208A JP23620884A JPH0466100B2 JP H0466100 B2 JPH0466100 B2 JP H0466100B2 JP 59236208 A JP59236208 A JP 59236208A JP 23620884 A JP23620884 A JP 23620884A JP H0466100 B2 JPH0466100 B2 JP H0466100B2
Authority
JP
Japan
Prior art keywords
region
polycrystalline silicon
film
forming
selectively
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59236208A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61114575A (ja
Inventor
Junzo Shimizu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP59236208A priority Critical patent/JPS61114575A/ja
Publication of JPS61114575A publication Critical patent/JPS61114575A/ja
Publication of JPH0466100B2 publication Critical patent/JPH0466100B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/34—Bipolar devices
    • H10D48/345—Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions

Landscapes

  • Bipolar Transistors (AREA)
JP59236208A 1984-11-09 1984-11-09 半導体装置の製造方法 Granted JPS61114575A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59236208A JPS61114575A (ja) 1984-11-09 1984-11-09 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59236208A JPS61114575A (ja) 1984-11-09 1984-11-09 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS61114575A JPS61114575A (ja) 1986-06-02
JPH0466100B2 true JPH0466100B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1992-10-22

Family

ID=16997376

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59236208A Granted JPS61114575A (ja) 1984-11-09 1984-11-09 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS61114575A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0616512B2 (ja) * 1986-11-07 1994-03-02 三菱電機株式会社 半導体集積回路装置およびその製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54155778A (en) * 1978-05-30 1979-12-08 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device and its manufacture
JPS5694770A (en) * 1979-12-28 1981-07-31 Nec Corp Transistor

Also Published As

Publication number Publication date
JPS61114575A (ja) 1986-06-02

Similar Documents

Publication Publication Date Title
EP0170250A2 (en) Bipolar transistor and method for producing the bipolar transistor
JPS59124141A (ja) 半導体装置の製造方法
JP2762851B2 (ja) 半導体装置の製造方法
JPH0466100B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPH06291178A (ja) 半導体装置の製造方法
US4677456A (en) Semiconductor structure and manufacturing method
JP3190144B2 (ja) 半導体集積回路の製造方法
JPH0126184B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP2707646B2 (ja) 半導体装置の製造方法
JPH0523495B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPS6122866B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP2626300B2 (ja) 半導体装置の製造方法
JPH06275633A (ja) バイポーラ型半導体装置およびその製造方法
JP2630275B2 (ja) 半導体装置の製造方法
JP2836393B2 (ja) 半導体装置およびその製造方法
JP2745946B2 (ja) 半導体集積回路の製造方法
JPS61283167A (ja) 半導体装置の製造方法
JPS6295871A (ja) 半導体装置の製造方法
JPS60211958A (ja) 半導体装置
JP2718101B2 (ja) 半導体装置の製造方法
JP2556155B2 (ja) 半導体装置の製造方法
JPH0154864B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPS60165757A (ja) 半導体装置の製造方法
JPH05235009A (ja) 半導体集積回路装置の製造方法
JPH0691101B2 (ja) バイポーラトランジスタの製造方法