JPH0465824A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPH0465824A
JPH0465824A JP17980190A JP17980190A JPH0465824A JP H0465824 A JPH0465824 A JP H0465824A JP 17980190 A JP17980190 A JP 17980190A JP 17980190 A JP17980190 A JP 17980190A JP H0465824 A JPH0465824 A JP H0465824A
Authority
JP
Japan
Prior art keywords
film
layer
barrier layer
atmosphere
mixed gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17980190A
Other languages
Japanese (ja)
Inventor
Atsuo Fushida
Katsuhiko Iizuka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP17980190A priority Critical patent/JPH0465824A/en
Publication of JPH0465824A publication Critical patent/JPH0465824A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To add oxygen to a diffusion barrier layer formed between a silicon substrate and wiring layer and make the heat of the barrier layer not to be diffused to the outside by forming the barrier layer by a sputtering method performed in the atmosphere of a mixed gas of Ar and CO2 by using a target of the nitride of a metal having a high melting point.
CONSTITUTION: A Ti film 5 which is used for making ohmic contact with an N-type diffusion layer 2, TiN film 6 which becomes a diffusion barrier layer, and Al-Cu (Cu:2%) film 7 which is used for aluminum wiring are successively formed on a P-type Si substrate l provided with the diffusion layer 2 and an SiO2 film 3 having a contact hole 4 formed on the layer 2. Before forming the Ti film 5, the natural oxide film in the hole 4 is removed by wet treatment using a hydrofluoric acid solution. There are two methods for making the TiN film 6, with one being a sputtering method performed in the atmosphere of a mixed gas of Ar and CO2 by using a target made of TiN and the other being a sputtering method performed in the atmosphere of a mixed gas of Ar, N2, and O2 by using a target made of TiC.
COPYRIGHT: (C)1992,JPO&Japio
JP17980190A 1990-07-06 1990-07-06 Manufacture of semiconductor device Pending JPH0465824A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17980190A JPH0465824A (en) 1990-07-06 1990-07-06 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17980190A JPH0465824A (en) 1990-07-06 1990-07-06 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPH0465824A true JPH0465824A (en) 1992-03-02

Family

ID=16072136

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17980190A Pending JPH0465824A (en) 1990-07-06 1990-07-06 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPH0465824A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0640816A1 (en) * 1993-08-26 1995-03-01 SIEMENS MATSUSHITA COMPONENTS GmbH & CO. KG Hybrid thermistor temperature sensor
KR100310468B1 (en) * 1994-07-07 2001-12-15 박종섭 Method for forming metal barrier film of semiconductor device
WO2001096483A1 (en) 2000-06-07 2001-12-20 Seiko Epson Corporation Ink-jet recording ink, ink-jet recording ink set, recording method, print, and ink-jet recording apparatus
KR100459947B1 (en) * 1997-12-30 2005-02-03 주식회사 하이닉스반도체 Method of forming a metal line of semiconductor device
US7522333B2 (en) 2005-04-19 2009-04-21 Seiko Epson Corporation Method of producing an electrophoretic particle, electrophoretic device, and electric apparatus
US8088486B2 (en) 2005-04-20 2012-01-03 Seiko Epson Corporation Microencapsulated particulate metal material, method for producing the same, and aqueous dispersion and ink jet ink using the same

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0640816A1 (en) * 1993-08-26 1995-03-01 SIEMENS MATSUSHITA COMPONENTS GmbH & CO. KG Hybrid thermistor temperature sensor
KR100310468B1 (en) * 1994-07-07 2001-12-15 박종섭 Method for forming metal barrier film of semiconductor device
KR100459947B1 (en) * 1997-12-30 2005-02-03 주식회사 하이닉스반도체 Method of forming a metal line of semiconductor device
WO2001096483A1 (en) 2000-06-07 2001-12-20 Seiko Epson Corporation Ink-jet recording ink, ink-jet recording ink set, recording method, print, and ink-jet recording apparatus
US7522333B2 (en) 2005-04-19 2009-04-21 Seiko Epson Corporation Method of producing an electrophoretic particle, electrophoretic device, and electric apparatus
US8088486B2 (en) 2005-04-20 2012-01-03 Seiko Epson Corporation Microencapsulated particulate metal material, method for producing the same, and aqueous dispersion and ink jet ink using the same

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