JPH0465019A - Dielectric ceramic compound - Google Patents

Dielectric ceramic compound

Info

Publication number
JPH0465019A
JPH0465019A JP2176646A JP17664690A JPH0465019A JP H0465019 A JPH0465019 A JP H0465019A JP 2176646 A JP2176646 A JP 2176646A JP 17664690 A JP17664690 A JP 17664690A JP H0465019 A JPH0465019 A JP H0465019A
Authority
JP
Japan
Prior art keywords
oxide
mol
less
pbo
dielectric ceramic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2176646A
Other languages
Japanese (ja)
Inventor
Toru Ishida
徹 石田
Takashi Tsuboi
隆 坪井
Hiroyuki Ito
博之 伊藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Proterial Ltd
Original Assignee
Hitachi Ferrite Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ferrite Ltd filed Critical Hitachi Ferrite Ltd
Priority to JP2176646A priority Critical patent/JPH0465019A/en
Publication of JPH0465019A publication Critical patent/JPH0465019A/en
Pending legal-status Critical Current

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  • Compositions Of Oxide Ceramics (AREA)
  • Inorganic Insulating Materials (AREA)

Abstract

PURPOSE:To have a large specific dielectric constant (epsilonr) and a small temperature coefficient (tauf) of a resonance frequency by specifying (a-d) of mol% when (a-d) are expressed as the respective mol% of CaO, SrO, BiO and TiO2, and adding at least one kind of iron oxide, nickel oxide, leak oxide (PbO) to the main gradient. CONSTITUTION:A dielectric ceramic compound comprising a compound of (a) mol% of CaO, (b) mol% of SrO, (c) mol% of Bi2O3 and (d) mol% of TiO2, wherein the composition ranges are respectively defined as 0<=(a)<30, 0<(b)<=20, 10<=(c)<=50, 40<=(d)<=80 and at least one kind of 5wt.% or less of lead oxide (Fe2O3), 1wt.% of nickel oxide (NiO) and 5wt.% of lead oxide (PbO) is added to the main gradient of 0<a+b<=30. It is thus possible have 100 or more of specific dielectric constant (epsilonr) and the temperature coefficient (tauf) of resonance frequency in the microwave range from Nhz band to Ghz band.

Description

【発明の詳細な説明】 (産業上の利用分野) 本発明は、大きな比誘電率(εr)を持ち、共振周波数
の温度係数(τf)が、小さくかつ広範囲に制御できる
誘電体磁器組成物に関するものである。
Detailed Description of the Invention (Industrial Application Field) The present invention relates to a dielectric ceramic composition that has a large dielectric constant (εr) and a temperature coefficient (τf) of a resonant frequency that can be controlled over a small and wide range. It is something.

(従来の技術) MI(z帯からGHz帯のマイクロ波帯域の電波を利用
した自動車電話、コードレス電話等の移動無線機に、最
近、セラミックフィルターが多く用いられるようになっ
た。これは、セラミックフィルターを構成している誘電
体が大きな比誘電率(εr)。
(Prior art) Ceramic filters have recently come to be widely used in mobile radio equipment such as car phones and cordless phones that use radio waves in the microwave band from the Z band to the GHz band. The dielectric material that makes up the filter has a large relative dielectric constant (εr).

無負荷Q (QO)を持ち、共振周波数の温度係数(τ
f)の値が、その誘電体の組成により0を中心として正
負いずれも自由に制御できるという利点を持つことに起
因している。
It has an unloaded Q (QO) and a temperature coefficient of the resonant frequency (τ
This is due to the fact that the value of f) can be freely controlled in both positive and negative directions around 0 depending on the composition of the dielectric material.

従来、上述の誘電体材料として、 MgO−CaO−T
iO2系、ZrO□−TiOz−5n02系、Bad−
Tie□−ランタノイド酸化物系を使用していた。
Conventionally, as the above dielectric material, MgO-CaO-T
iO2 series, ZrO□-TiOz-5n02 series, Bad-
A Tie□-lanthanide oxide system was used.

(発明が解決しようとする課題) しかしながら、これらの材料はεrがたかだか100以
下であり、共振素子を作成した場合その小型化(1/i
r)には、おのずと限界があった。
(Problem to be solved by the invention) However, these materials have an εr of at most 100 or less, and when a resonant element is created, it is difficult to miniaturize it (1/i
r) naturally had its limits.

従って、εrの高い誘電体磁器組成物が切望されていた
Therefore, a dielectric ceramic composition with a high εr has been desired.

(課題を解決するための手段) 本発明者らは、M Hz帯からGHz帯のマイクロ波領
域において、[rが100以上、かっτfが±100p
prn/ ℃以下、かつQ。が100以上の組成物を得
るべく、種々の組成系について検討した結果、CaOd
モル%、5rObモル%、 Bi2O,cモル%。
(Means for Solving the Problems) The present inventors have discovered that [r is 100 or more and
prn/℃ or less, and Q. In order to obtain a composition with CaOd of 100 or more, we investigated various composition systems and found that CaOd
mol%, 5rOb mol%, Bi2O,c mol%.

Tie、 dモル%の組成系よりなり、それぞれの組成
範囲が O≦a <30.   O< b≦2010≦c≦50
.  40≦d≦80 ただしO< a + b≦30である主成分に、酸化鉄
(Fezes)を5重量%以下、酸化ニッケル(NiO
)を1重量%以下、酸化鉛(PbO)を5重量%以下の
うち少なくとも1種類添加した時に、所望の特性が得ら
れることを明らかとしたものである。
Tie, consists of a composition system of d mol%, and each composition range is O≦a<30. O< b≦2010≦c≦50
.. 40≦d≦80 However, O< a + b≦30 The main components include 5% by weight or less of iron oxide (Fezes) and nickel oxide (NiO
) and at least one of lead oxide (PbO) and lead oxide (PbO) in an amount of 5% by weight or less, the desired characteristics can be obtained.

本発明において、Cab、 5rO1Bi2o、、 T
ie2の組成は、この範囲外では、Q、が100以下と
なり実用的ではない。
In the present invention, Cab, 5rO1Bi2o,, T
If the composition of ie2 is outside this range, Q will be 100 or less, which is not practical.

また、Fe2O,の添加量が5重量%を越えると、Qo
が100以下となり、τfもマイナス側に大きくなる。
Furthermore, if the amount of Fe2O added exceeds 5% by weight, the Qo
becomes 100 or less, and τf also increases on the negative side.

また、NxOの添加量が1重量%より多い場合、又pb
oの添加量が5重量%より多い場合。
In addition, if the amount of NxO added is more than 1% by weight, or pb
When the amount of o added is more than 5% by weight.

Q、は100以下となり、τfもプラス側に大きくなり
、実用には不適となる。
Q becomes 100 or less, and τf also becomes large on the plus side, making it unsuitable for practical use.

なお、本発明の誘電体磁器組成物は、所定量の素原料を
混合・焼成することにより、最終的に酸化物磁器組成物
になればよく、素原料は熱分解して酸化物となる炭酸塩
・硝酸塩・有機酸塩などでも良い。
Note that the dielectric ceramic composition of the present invention can be finally made into an oxide ceramic composition by mixing and firing a predetermined amount of raw materials, and the raw materials are carbonic acid that is thermally decomposed to become an oxide. Salts, nitrates, organic acid salts, etc. may also be used.

(実施例) CaCO31SrCO3HBx2031 TjOz +
 Fe2O3+ N101 pb。
(Example) CaCO31SrCO3HBx2031 TjOz +
Fe2O3+ N101 pb.

を第1表に示す各組成で秤量し、めのうボールを入れた
ポリエチレンポットにアセトンとともに投入し、16時
時間式混合した。
Each composition shown in Table 1 was weighed out, put into a polyethylene pot containing an agate ball together with acetone, and mixed for 16 hours.

このスラリーを加熱乾燥した後、5メツシユのふるいで
整粒し、空気中において1000℃:2時間で仮焼し、
再び、めのうボールを入れたポリエチレンポットにアセ
トンとともに投入し、16時間粉砕した。
After heating and drying this slurry, it was sized through a 5-mesh sieve, and calcined in air at 1000°C for 2 hours.
Again, the agate balls were placed in a polyethylene pot together with acetone and ground for 16 hours.

得られたスラリーを加熱乾燥した後、ポリビニルアルコ
ール水溶液を加えて混線を行い、32メツシユのふるい
で造粒した。
After the obtained slurry was dried by heating, an aqueous polyvinyl alcohol solution was added to perform cross-mixing, and the mixture was granulated using a 32-mesh sieve.

造粒粉をit/cdで成形し、空気中において1200
〜1400℃4時間で焼成した。得られた焼成体を直径
約30m、高さ約15nmに加工し、約I GHzに生
ずるTEo1xモードのピークで、εrおよびQ。を算
出し、次いで一20℃から+60℃における共振周波数
の変化より、τfを求めた。
The granulated powder was molded at it/cd and heated to 1200 m in air.
It was fired at ~1400°C for 4 hours. The obtained fired body was processed to have a diameter of about 30 m and a height of about 15 nm, and εr and Q were measured at the peak of the TEo1x mode occurring at about I GHz. was calculated, and then τf was determined from the change in resonance frequency from -20°C to +60°C.

各特性を第1表に示した。なお、本発明の組成範囲内の
試料は実施例1本発明の組成範囲外の試料は比較例とし
て区別した。
Each characteristic is shown in Table 1. The samples within the composition range of the present invention were classified as Example 1 and the samples outside the composition range of the present invention were classified as Comparative Examples.

(発明の効果) 本発明は、以上のようにマイクロ波領域において、εr
が大きく、Qo も高く、又τfの値をCaOとSrO
の組成比、又Fe2O3,Nip、 PbOの添加量に
より幅広く調整できるものであり、マイクロ波用誘電体
、また温度補償用コンデンサなどに用いることができ、
工業的価値が高いものである。
(Effects of the Invention) As described above, the present invention provides εr
is large, Qo is also high, and the value of τf is different from CaO and SrO.
It can be adjusted widely by changing the composition ratio of Fe2O3, Nip, and PbO, and can be used for microwave dielectrics, temperature compensation capacitors, etc.
It has high industrial value.

Claims (1)

【特許請求の範囲】 酸化カルシウム(CaO)、酸化ストロンチウム(Sr
O)、酸化ビスマス(Bi_2O_3)および酸化チタ
ン(TiO_2)を構成成分とし、組成式を aCaO・b SrO・c Bi_2O_3・d Ti
O_2で表した時、a,b,c,dがモル%で、それぞ
れ 0≦a<30,0<b≦20 10≦c≦50,40≦d≦80 ただし 0<a+b≦30 の範囲からなる主成分に、酸化鉄(Fe_2O_3)を
5重量%以下、酸化ニッケル(NiO)を1重量%以下
、酸化鉛(PbO)を5重量%以下のうち少なくとも1
種類添加したことを特徴とする誘電体磁器組成物。
[Claims] Calcium oxide (CaO), strontium oxide (Sr
O), bismuth oxide (Bi_2O_3) and titanium oxide (TiO_2) are the constituent components, and the composition formula is aCaO・b SrO・c Bi_2O_3・d Ti
When expressed as O_2, a, b, c, and d are mol%, respectively, from the range of 0≦a<30, 0<b≦20, 10≦c≦50, 40≦d≦80, but 0<a+b≦30. The main components include at least one of iron oxide (Fe_2O_3) of 5% by weight or less, nickel oxide (NiO) of 1% by weight or less, and lead oxide (PbO) of 5% by weight or less.
A dielectric ceramic composition characterized by the addition of various types.
JP2176646A 1990-07-02 1990-07-02 Dielectric ceramic compound Pending JPH0465019A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2176646A JPH0465019A (en) 1990-07-02 1990-07-02 Dielectric ceramic compound

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2176646A JPH0465019A (en) 1990-07-02 1990-07-02 Dielectric ceramic compound

Publications (1)

Publication Number Publication Date
JPH0465019A true JPH0465019A (en) 1992-03-02

Family

ID=16017222

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2176646A Pending JPH0465019A (en) 1990-07-02 1990-07-02 Dielectric ceramic compound

Country Status (1)

Country Link
JP (1) JPH0465019A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9837446B2 (en) 2011-08-02 2017-12-05 Samsung Display Co., Ltd. Thin film transistor array panel and manufacturing method thereof
CN107867826A (en) * 2017-11-23 2018-04-03 苏州科茂电子材料科技有限公司 A kind of preparation method of refractory ceramics dielectric material

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9837446B2 (en) 2011-08-02 2017-12-05 Samsung Display Co., Ltd. Thin film transistor array panel and manufacturing method thereof
CN107867826A (en) * 2017-11-23 2018-04-03 苏州科茂电子材料科技有限公司 A kind of preparation method of refractory ceramics dielectric material

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