JPH0465019A - Dielectric ceramic compound - Google Patents
Dielectric ceramic compoundInfo
- Publication number
- JPH0465019A JPH0465019A JP2176646A JP17664690A JPH0465019A JP H0465019 A JPH0465019 A JP H0465019A JP 2176646 A JP2176646 A JP 2176646A JP 17664690 A JP17664690 A JP 17664690A JP H0465019 A JPH0465019 A JP H0465019A
- Authority
- JP
- Japan
- Prior art keywords
- oxide
- mol
- less
- pbo
- dielectric ceramic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000919 ceramic Substances 0.000 title claims abstract description 7
- 150000001875 compounds Chemical class 0.000 title abstract 3
- 239000000203 mixture Substances 0.000 claims abstract description 18
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910000480 nickel oxide Inorganic materials 0.000 claims abstract description 6
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 claims abstract description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims abstract 5
- IATRAKWUXMZMIY-UHFFFAOYSA-N strontium oxide Chemical compound [O-2].[Sr+2] IATRAKWUXMZMIY-UHFFFAOYSA-N 0.000 claims 3
- ODINCKMPIJJUCX-UHFFFAOYSA-N Calcium oxide Chemical compound [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 claims 1
- 229910000416 bismuth oxide Inorganic materials 0.000 claims 1
- 239000000470 constituent Substances 0.000 claims 1
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 claims 1
- YEXPOXQUZXUXJW-UHFFFAOYSA-N oxolead Chemical compound [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 claims 1
- 239000010936 titanium Substances 0.000 claims 1
- HTUMBQDCCIXGCV-UHFFFAOYSA-N lead oxide Chemical compound [O-2].[Pb+2] HTUMBQDCCIXGCV-UHFFFAOYSA-N 0.000 abstract description 6
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 abstract description 3
- WMWLMWRWZQELOS-UHFFFAOYSA-N bismuth(iii) oxide Chemical compound O=[Bi]O[Bi]=O WMWLMWRWZQELOS-UHFFFAOYSA-N 0.000 abstract 2
- 229910000464 lead oxide Inorganic materials 0.000 abstract 1
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- 239000003989 dielectric material Substances 0.000 description 4
- -1 organic acid salts Chemical class 0.000 description 3
- 239000004698 Polyethylene Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229920000573 polyethylene Polymers 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-N carbonic acid Chemical compound OC(O)=O BVKZGUZCCUSVTD-UHFFFAOYSA-N 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 229910000311 lanthanide oxide Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000002823 nitrates Chemical class 0.000 description 1
- 239000011224 oxide ceramic Substances 0.000 description 1
- 229910052574 oxide ceramic Inorganic materials 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
Landscapes
- Compositions Of Oxide Ceramics (AREA)
- Inorganic Insulating Materials (AREA)
Abstract
Description
【発明の詳細な説明】
(産業上の利用分野)
本発明は、大きな比誘電率(εr)を持ち、共振周波数
の温度係数(τf)が、小さくかつ広範囲に制御できる
誘電体磁器組成物に関するものである。Detailed Description of the Invention (Industrial Application Field) The present invention relates to a dielectric ceramic composition that has a large dielectric constant (εr) and a temperature coefficient (τf) of a resonant frequency that can be controlled over a small and wide range. It is something.
(従来の技術)
MI(z帯からGHz帯のマイクロ波帯域の電波を利用
した自動車電話、コードレス電話等の移動無線機に、最
近、セラミックフィルターが多く用いられるようになっ
た。これは、セラミックフィルターを構成している誘電
体が大きな比誘電率(εr)。(Prior art) Ceramic filters have recently come to be widely used in mobile radio equipment such as car phones and cordless phones that use radio waves in the microwave band from the Z band to the GHz band. The dielectric material that makes up the filter has a large relative dielectric constant (εr).
無負荷Q (QO)を持ち、共振周波数の温度係数(τ
f)の値が、その誘電体の組成により0を中心として正
負いずれも自由に制御できるという利点を持つことに起
因している。It has an unloaded Q (QO) and a temperature coefficient of the resonant frequency (τ
This is due to the fact that the value of f) can be freely controlled in both positive and negative directions around 0 depending on the composition of the dielectric material.
従来、上述の誘電体材料として、 MgO−CaO−T
iO2系、ZrO□−TiOz−5n02系、Bad−
Tie□−ランタノイド酸化物系を使用していた。Conventionally, as the above dielectric material, MgO-CaO-T
iO2 series, ZrO□-TiOz-5n02 series, Bad-
A Tie□-lanthanide oxide system was used.
(発明が解決しようとする課題)
しかしながら、これらの材料はεrがたかだか100以
下であり、共振素子を作成した場合その小型化(1/i
r)には、おのずと限界があった。(Problem to be solved by the invention) However, these materials have an εr of at most 100 or less, and when a resonant element is created, it is difficult to miniaturize it (1/i
r) naturally had its limits.
従って、εrの高い誘電体磁器組成物が切望されていた
。Therefore, a dielectric ceramic composition with a high εr has been desired.
(課題を解決するための手段)
本発明者らは、M Hz帯からGHz帯のマイクロ波領
域において、[rが100以上、かっτfが±100p
prn/ ℃以下、かつQ。が100以上の組成物を得
るべく、種々の組成系について検討した結果、CaOd
モル%、5rObモル%、 Bi2O,cモル%。(Means for Solving the Problems) The present inventors have discovered that [r is 100 or more and
prn/℃ or less, and Q. In order to obtain a composition with CaOd of 100 or more, we investigated various composition systems and found that CaOd
mol%, 5rOb mol%, Bi2O,c mol%.
Tie、 dモル%の組成系よりなり、それぞれの組成
範囲が
O≦a <30. O< b≦2010≦c≦50
. 40≦d≦80
ただしO< a + b≦30である主成分に、酸化鉄
(Fezes)を5重量%以下、酸化ニッケル(NiO
)を1重量%以下、酸化鉛(PbO)を5重量%以下の
うち少なくとも1種類添加した時に、所望の特性が得ら
れることを明らかとしたものである。Tie, consists of a composition system of d mol%, and each composition range is O≦a<30. O< b≦2010≦c≦50
.. 40≦d≦80 However, O< a + b≦30 The main components include 5% by weight or less of iron oxide (Fezes) and nickel oxide (NiO
) and at least one of lead oxide (PbO) and lead oxide (PbO) in an amount of 5% by weight or less, the desired characteristics can be obtained.
本発明において、Cab、 5rO1Bi2o、、 T
ie2の組成は、この範囲外では、Q、が100以下と
なり実用的ではない。In the present invention, Cab, 5rO1Bi2o,, T
If the composition of ie2 is outside this range, Q will be 100 or less, which is not practical.
また、Fe2O,の添加量が5重量%を越えると、Qo
が100以下となり、τfもマイナス側に大きくなる。Furthermore, if the amount of Fe2O added exceeds 5% by weight, the Qo
becomes 100 or less, and τf also increases on the negative side.
また、NxOの添加量が1重量%より多い場合、又pb
oの添加量が5重量%より多い場合。In addition, if the amount of NxO added is more than 1% by weight, or pb
When the amount of o added is more than 5% by weight.
Q、は100以下となり、τfもプラス側に大きくなり
、実用には不適となる。Q becomes 100 or less, and τf also becomes large on the plus side, making it unsuitable for practical use.
なお、本発明の誘電体磁器組成物は、所定量の素原料を
混合・焼成することにより、最終的に酸化物磁器組成物
になればよく、素原料は熱分解して酸化物となる炭酸塩
・硝酸塩・有機酸塩などでも良い。Note that the dielectric ceramic composition of the present invention can be finally made into an oxide ceramic composition by mixing and firing a predetermined amount of raw materials, and the raw materials are carbonic acid that is thermally decomposed to become an oxide. Salts, nitrates, organic acid salts, etc. may also be used.
(実施例)
CaCO31SrCO3HBx2031 TjOz +
Fe2O3+ N101 pb。(Example) CaCO31SrCO3HBx2031 TjOz +
Fe2O3+ N101 pb.
を第1表に示す各組成で秤量し、めのうボールを入れた
ポリエチレンポットにアセトンとともに投入し、16時
時間式混合した。Each composition shown in Table 1 was weighed out, put into a polyethylene pot containing an agate ball together with acetone, and mixed for 16 hours.
このスラリーを加熱乾燥した後、5メツシユのふるいで
整粒し、空気中において1000℃:2時間で仮焼し、
再び、めのうボールを入れたポリエチレンポットにアセ
トンとともに投入し、16時間粉砕した。After heating and drying this slurry, it was sized through a 5-mesh sieve, and calcined in air at 1000°C for 2 hours.
Again, the agate balls were placed in a polyethylene pot together with acetone and ground for 16 hours.
得られたスラリーを加熱乾燥した後、ポリビニルアルコ
ール水溶液を加えて混線を行い、32メツシユのふるい
で造粒した。After the obtained slurry was dried by heating, an aqueous polyvinyl alcohol solution was added to perform cross-mixing, and the mixture was granulated using a 32-mesh sieve.
造粒粉をit/cdで成形し、空気中において1200
〜1400℃4時間で焼成した。得られた焼成体を直径
約30m、高さ約15nmに加工し、約I GHzに生
ずるTEo1xモードのピークで、εrおよびQ。を算
出し、次いで一20℃から+60℃における共振周波数
の変化より、τfを求めた。The granulated powder was molded at it/cd and heated to 1200 m in air.
It was fired at ~1400°C for 4 hours. The obtained fired body was processed to have a diameter of about 30 m and a height of about 15 nm, and εr and Q were measured at the peak of the TEo1x mode occurring at about I GHz. was calculated, and then τf was determined from the change in resonance frequency from -20°C to +60°C.
各特性を第1表に示した。なお、本発明の組成範囲内の
試料は実施例1本発明の組成範囲外の試料は比較例とし
て区別した。Each characteristic is shown in Table 1. The samples within the composition range of the present invention were classified as Example 1 and the samples outside the composition range of the present invention were classified as Comparative Examples.
(発明の効果)
本発明は、以上のようにマイクロ波領域において、εr
が大きく、Qo も高く、又τfの値をCaOとSrO
の組成比、又Fe2O3,Nip、 PbOの添加量に
より幅広く調整できるものであり、マイクロ波用誘電体
、また温度補償用コンデンサなどに用いることができ、
工業的価値が高いものである。(Effects of the Invention) As described above, the present invention provides εr
is large, Qo is also high, and the value of τf is different from CaO and SrO.
It can be adjusted widely by changing the composition ratio of Fe2O3, Nip, and PbO, and can be used for microwave dielectrics, temperature compensation capacitors, etc.
It has high industrial value.
Claims (1)
O)、酸化ビスマス(Bi_2O_3)および酸化チタ
ン(TiO_2)を構成成分とし、組成式を aCaO・b SrO・c Bi_2O_3・d Ti
O_2で表した時、a,b,c,dがモル%で、それぞ
れ 0≦a<30,0<b≦20 10≦c≦50,40≦d≦80 ただし 0<a+b≦30 の範囲からなる主成分に、酸化鉄(Fe_2O_3)を
5重量%以下、酸化ニッケル(NiO)を1重量%以下
、酸化鉛(PbO)を5重量%以下のうち少なくとも1
種類添加したことを特徴とする誘電体磁器組成物。[Claims] Calcium oxide (CaO), strontium oxide (Sr
O), bismuth oxide (Bi_2O_3) and titanium oxide (TiO_2) are the constituent components, and the composition formula is aCaO・b SrO・c Bi_2O_3・d Ti
When expressed as O_2, a, b, c, and d are mol%, respectively, from the range of 0≦a<30, 0<b≦20, 10≦c≦50, 40≦d≦80, but 0<a+b≦30. The main components include at least one of iron oxide (Fe_2O_3) of 5% by weight or less, nickel oxide (NiO) of 1% by weight or less, and lead oxide (PbO) of 5% by weight or less.
A dielectric ceramic composition characterized by the addition of various types.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2176646A JPH0465019A (en) | 1990-07-02 | 1990-07-02 | Dielectric ceramic compound |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2176646A JPH0465019A (en) | 1990-07-02 | 1990-07-02 | Dielectric ceramic compound |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH0465019A true JPH0465019A (en) | 1992-03-02 |
Family
ID=16017222
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2176646A Pending JPH0465019A (en) | 1990-07-02 | 1990-07-02 | Dielectric ceramic compound |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0465019A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9837446B2 (en) | 2011-08-02 | 2017-12-05 | Samsung Display Co., Ltd. | Thin film transistor array panel and manufacturing method thereof |
CN107867826A (en) * | 2017-11-23 | 2018-04-03 | 苏州科茂电子材料科技有限公司 | A kind of preparation method of refractory ceramics dielectric material |
-
1990
- 1990-07-02 JP JP2176646A patent/JPH0465019A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9837446B2 (en) | 2011-08-02 | 2017-12-05 | Samsung Display Co., Ltd. | Thin film transistor array panel and manufacturing method thereof |
CN107867826A (en) * | 2017-11-23 | 2018-04-03 | 苏州科茂电子材料科技有限公司 | A kind of preparation method of refractory ceramics dielectric material |
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