JPH046112B2 - - Google Patents
Info
- Publication number
- JPH046112B2 JPH046112B2 JP54147498A JP14749879A JPH046112B2 JP H046112 B2 JPH046112 B2 JP H046112B2 JP 54147498 A JP54147498 A JP 54147498A JP 14749879 A JP14749879 A JP 14749879A JP H046112 B2 JPH046112 B2 JP H046112B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor
- photoelectric conversion
- insulating
- semi
- insulating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/28—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors
- H10F30/2823—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors the devices being conductor-insulator-semiconductor devices, e.g. diodes or charge-coupled devices [CCD]
Landscapes
- Photovoltaic Devices (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14749879A JPS5670674A (en) | 1979-11-13 | 1979-11-13 | Photoelectric converter |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14749879A JPS5670674A (en) | 1979-11-13 | 1979-11-13 | Photoelectric converter |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5670674A JPS5670674A (en) | 1981-06-12 |
JPH046112B2 true JPH046112B2 (enrdf_load_stackoverflow) | 1992-02-04 |
Family
ID=15431732
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14749879A Granted JPS5670674A (en) | 1979-11-13 | 1979-11-13 | Photoelectric converter |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5670674A (enrdf_load_stackoverflow) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2723608B2 (ja) * | 1989-04-28 | 1998-03-09 | 松下電器産業株式会社 | 太陽電池 |
-
1979
- 1979-11-13 JP JP14749879A patent/JPS5670674A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS5670674A (en) | 1981-06-12 |
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