JPH0460555U

JPH0460555U -

Info

Publication number: JPH0460555U
Application number: JP10334390U
Authority: JP
Priority date: 1990-10-02
Filing date: 1990-10-02
Publication date: 1992-05-25

Description

[Brief explanation of the drawing]

第１図から第９図迄は、本考案によるプラズマ
処理装置を示すためのもので、第１図は全体構成
を示す断面図、第２図は第１図の−線による
拡大断面図、第３図は第１図の他の実施例を示す
断面図、第４図は第３図のＡ部の拡大断面図、第
５図は第３図の環状ガス供給管の斜視図、第６図
は第１図の他の実施例を示す断面図、第７図は第
６図のＢ部の拡大断面図、第８図は第６図の環状
ガス供給管の平面図、第９図は本考案と従来構成
の成膜分布を示す特性図、第１０図および第１１
図は従来構成を示すためのもので、第１０図は断
面図、第１１図は第１０図の−拡大断面図で
ある。１はプラズマ生成室、１ａは天壁、４は材料ガ
ス、５は材料ガス供給管、Ｐは中心点、１３は試
料、２０は環状ガス供給管、２０ｂは放出口、２
０ｃは接続管、３０は環状溝、４０は板体である
。 1 to 9 are for illustrating the plasma processing apparatus according to the present invention. FIG. 1 is a sectional view showing the overall configuration, FIG. 2 is an enlarged sectional view taken along the line - in FIG. 1, and FIG. 3 is a sectional view showing another embodiment of FIG. 1, FIG. 4 is an enlarged sectional view of part A in FIG. 3, FIG. 5 is a perspective view of the annular gas supply pipe in FIG. 3, and FIG. 7 is an enlarged sectional view of section B in FIG. 6, FIG. 8 is a plan view of the annular gas supply pipe in FIG. 6, and FIG. Characteristic diagrams showing the film formation distribution of the proposed and conventional configurations, Figures 10 and 11
The drawings are for showing the conventional structure, and FIG. 10 is a cross-sectional view, and FIG. 11 is an enlarged cross-sectional view of FIG. 10. 1 is a plasma generation chamber, 1a is a ceiling wall, 4 is a material gas, 5 is a material gas supply pipe, P is a center point, 13 is a sample, 20 is an annular gas supply pipe, 20b is a discharge port, 2
0c is a connecting pipe, 30 is an annular groove, and 40 is a plate.

Claims

[Claims for Utility Model Registration] (1) In a plasma processing apparatus that processes a sample 13 using plasma generated in a plasma generation chamber 1 by electron cyclotron resonance excitation, supplying the plasma to the plasma generation chamber 1. A material gas supply pipe 5 for guiding the material gas 4 to be produced, and a plurality of discharge ports 20b connected to the material gas supply pipe 5,
A plasma processing apparatus characterized in that the discharge ports 20b are arranged in an annular shape. (2) The plasma processing apparatus according to claim 1, wherein each of the discharge ports 20b is provided in an annular gas supply pipe 20 connected to the material gas supply pipe 5. (3) The annular gas supply pipe 20 is connected to the sample 13.
3. The plasma processing apparatus according to claim 2, wherein the plasma processing apparatus is arranged substantially concentrically with respect to a center point P of the plasma processing apparatus. (4) A connecting pipe 20c is formed to stand up on the annular gas supply pipe 20, and the connecting pipe 20c is fitted into the material gas supply pipe 5. 3. The plasma processing apparatus according to 3. (5) An annular groove 30 formed in the ceiling wall 1a of the plasma generation chamber 1 so as to communicate with the material gas supply pipe 5, and a plate 40 joined to the ceiling wall 1a, 4. The plasma processing apparatus according to claim 1, wherein the discharge port 20b is provided in the annular groove 30 so as to communicate with the annular groove 30.