JPH0459862A - Epoxy resin composition for sealing semiconductor - Google Patents
Epoxy resin composition for sealing semiconductorInfo
- Publication number
- JPH0459862A JPH0459862A JP17351390A JP17351390A JPH0459862A JP H0459862 A JPH0459862 A JP H0459862A JP 17351390 A JP17351390 A JP 17351390A JP 17351390 A JP17351390 A JP 17351390A JP H0459862 A JPH0459862 A JP H0459862A
- Authority
- JP
- Japan
- Prior art keywords
- epoxy resin
- resin composition
- silane coupling
- curing agent
- coupling agent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000003822 epoxy resin Substances 0.000 title claims abstract description 46
- 229920000647 polyepoxide Polymers 0.000 title claims abstract description 46
- 239000004065 semiconductor Substances 0.000 title claims abstract description 24
- 239000000203 mixture Substances 0.000 title claims abstract description 23
- 238000007789 sealing Methods 0.000 title abstract description 6
- 239000006087 Silane Coupling Agent Substances 0.000 claims abstract description 16
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 12
- 239000000945 filler Substances 0.000 claims abstract description 10
- 125000000217 alkyl group Chemical group 0.000 claims abstract description 3
- 239000000126 substance Substances 0.000 claims abstract description 3
- 238000005538 encapsulation Methods 0.000 claims description 11
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 3
- 125000005843 halogen group Chemical group 0.000 claims description 2
- 229920005989 resin Polymers 0.000 abstract description 18
- 239000011347 resin Substances 0.000 abstract description 18
- 229920003986 novolac Polymers 0.000 abstract description 13
- 238000005476 soldering Methods 0.000 abstract description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 9
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 abstract description 6
- 235000010290 biphenyl Nutrition 0.000 abstract description 3
- 239000004305 biphenyl Substances 0.000 abstract description 3
- 239000003063 flame retardant Substances 0.000 abstract description 3
- RNFJDJUURJAICM-UHFFFAOYSA-N 2,2,4,4,6,6-hexaphenoxy-1,3,5-triaza-2$l^{5},4$l^{5},6$l^{5}-triphosphacyclohexa-1,3,5-triene Chemical compound N=1P(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP=1(OC=1C=CC=CC=1)OC1=CC=CC=C1 RNFJDJUURJAICM-UHFFFAOYSA-N 0.000 abstract description 2
- 238000013329 compounding Methods 0.000 abstract description 2
- 239000011342 resin composition Substances 0.000 abstract description 2
- 239000000377 silicon dioxide Substances 0.000 abstract description 2
- 229910052736 halogen Inorganic materials 0.000 abstract 1
- 150000002367 halogens Chemical class 0.000 abstract 1
- 238000000034 method Methods 0.000 description 16
- 229910000679 solder Inorganic materials 0.000 description 9
- -1 etc. Chemical compound 0.000 description 7
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 7
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 6
- SJECZPVISLOESU-UHFFFAOYSA-N 3-trimethoxysilylpropan-1-amine Chemical compound CO[Si](OC)(OC)CCCN SJECZPVISLOESU-UHFFFAOYSA-N 0.000 description 5
- 239000004593 Epoxy Substances 0.000 description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 4
- 239000005350 fused silica glass Substances 0.000 description 4
- 150000004668 long chain fatty acids Chemical class 0.000 description 4
- 229910000077 silane Inorganic materials 0.000 description 4
- RIOQSEWOXXDEQQ-UHFFFAOYSA-N triphenylphosphine Chemical compound C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 RIOQSEWOXXDEQQ-UHFFFAOYSA-N 0.000 description 4
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 3
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 3
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 3
- 239000003054 catalyst Substances 0.000 description 3
- 229930003836 cresol Natural products 0.000 description 3
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- GHMLBKRAJCXXBS-UHFFFAOYSA-N resorcinol Chemical compound OC1=CC=CC(O)=C1 GHMLBKRAJCXXBS-UHFFFAOYSA-N 0.000 description 3
- 238000001721 transfer moulding Methods 0.000 description 3
- UKRDPEFKFJNXQM-UHFFFAOYSA-N vinylsilane Chemical compound [SiH3]C=C UKRDPEFKFJNXQM-UHFFFAOYSA-N 0.000 description 3
- LLPKQRMDOFYSGZ-UHFFFAOYSA-N 2,5-dimethyl-1h-imidazole Chemical compound CC1=CN=C(C)N1 LLPKQRMDOFYSGZ-UHFFFAOYSA-N 0.000 description 2
- 125000000022 2-aminoethyl group Chemical group [H]C([*])([H])C([H])([H])N([H])[H] 0.000 description 2
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 2
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- ADCOVFLJGNWWNZ-UHFFFAOYSA-N antimony trioxide Chemical compound O=[Sb]O[Sb]=O ADCOVFLJGNWWNZ-UHFFFAOYSA-N 0.000 description 2
- 125000004432 carbon atom Chemical group C* 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000007822 coupling agent Substances 0.000 description 2
- 230000001186 cumulative effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229920001971 elastomer Polymers 0.000 description 2
- 125000003055 glycidyl group Chemical group C(C1CO1)* 0.000 description 2
- 150000002430 hydrocarbons Chemical group 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000004898 kneading Methods 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 238000011417 postcuring Methods 0.000 description 2
- 229960001755 resorcinol Drugs 0.000 description 2
- YWWDBCBWQNCYNR-UHFFFAOYSA-N trimethylphosphine Chemical compound CP(C)C YWWDBCBWQNCYNR-UHFFFAOYSA-N 0.000 description 2
- YOBOXHGSEJBUPB-MTOQALJVSA-N (z)-4-hydroxypent-3-en-2-one;zirconium Chemical compound [Zr].C\C(O)=C\C(C)=O.C\C(O)=C\C(C)=O.C\C(O)=C\C(C)=O.C\C(O)=C\C(C)=O YOBOXHGSEJBUPB-MTOQALJVSA-N 0.000 description 1
- WZCQRUWWHSTZEM-UHFFFAOYSA-N 1,3-phenylenediamine Chemical compound NC1=CC=CC(N)=C1 WZCQRUWWHSTZEM-UHFFFAOYSA-N 0.000 description 1
- FUIQBJHUESBZNU-UHFFFAOYSA-N 2-[(dimethylazaniumyl)methyl]phenolate Chemical compound CN(C)CC1=CC=CC=C1O FUIQBJHUESBZNU-UHFFFAOYSA-N 0.000 description 1
- HRSLYNJTMYIRHM-UHFFFAOYSA-N 2-[[4-[3,5-dimethyl-4-(oxiran-2-ylmethoxy)phenyl]-2,6-dimethylphenoxy]methyl]oxirane Chemical group CC1=CC(C=2C=C(C)C(OCC3OC3)=C(C)C=2)=CC(C)=C1OCC1CO1 HRSLYNJTMYIRHM-UHFFFAOYSA-N 0.000 description 1
- OZRVXYJWUUMVOW-UHFFFAOYSA-N 2-[[4-[4-(oxiran-2-ylmethoxy)phenyl]phenoxy]methyl]oxirane Chemical group C1OC1COC(C=C1)=CC=C1C(C=C1)=CC=C1OCC1CO1 OZRVXYJWUUMVOW-UHFFFAOYSA-N 0.000 description 1
- YTWBFUCJVWKCCK-UHFFFAOYSA-N 2-heptadecyl-1h-imidazole Chemical compound CCCCCCCCCCCCCCCCCC1=NC=CN1 YTWBFUCJVWKCCK-UHFFFAOYSA-N 0.000 description 1
- LXBGSDVWAMZHDD-UHFFFAOYSA-N 2-methyl-1h-imidazole Chemical compound CC1=NC=CN1 LXBGSDVWAMZHDD-UHFFFAOYSA-N 0.000 description 1
- ZCUJYXPAKHMBAZ-UHFFFAOYSA-N 2-phenyl-1h-imidazole Chemical compound C1=CNC(C=2C=CC=CC=2)=N1 ZCUJYXPAKHMBAZ-UHFFFAOYSA-N 0.000 description 1
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 description 1
- BIGOJJYDFLNSGB-UHFFFAOYSA-N 3-isocyanopropyl(trimethoxy)silane Chemical group CO[Si](OC)(OC)CCC[N+]#[C-] BIGOJJYDFLNSGB-UHFFFAOYSA-N 0.000 description 1
- NFVPEIKDMMISQO-UHFFFAOYSA-N 4-[(dimethylamino)methyl]phenol Chemical compound CN(C)CC1=CC=C(O)C=C1 NFVPEIKDMMISQO-UHFFFAOYSA-N 0.000 description 1
- ULKLGIFJWFIQFF-UHFFFAOYSA-N 5K8XI641G3 Chemical compound CCC1=NC=C(C)N1 ULKLGIFJWFIQFF-UHFFFAOYSA-N 0.000 description 1
- 241000321369 Cephalopholis fulva Species 0.000 description 1
- 229920000089 Cyclic olefin copolymer Polymers 0.000 description 1
- MQJKPEGWNLWLTK-UHFFFAOYSA-N Dapsone Chemical compound C1=CC(N)=CC=C1S(=O)(=O)C1=CC=C(N)C=C1 MQJKPEGWNLWLTK-UHFFFAOYSA-N 0.000 description 1
- 229920000459 Nitrile rubber Polymers 0.000 description 1
- LGRFSURHDFAFJT-UHFFFAOYSA-N Phthalic anhydride Natural products C1=CC=C2C(=O)OC(=O)C2=C1 LGRFSURHDFAFJT-UHFFFAOYSA-N 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 125000005595 acetylacetonate group Chemical group 0.000 description 1
- 150000008065 acid anhydrides Chemical class 0.000 description 1
- 125000002723 alicyclic group Chemical group 0.000 description 1
- 239000004844 aliphatic epoxy resin Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- 150000004982 aromatic amines Chemical class 0.000 description 1
- 239000010425 asbestos Substances 0.000 description 1
- JHIWVOJDXOSYLW-UHFFFAOYSA-N butyl 2,2-difluorocyclopropane-1-carboxylate Chemical compound CCCCOC(=O)C1CC1(F)F JHIWVOJDXOSYLW-UHFFFAOYSA-N 0.000 description 1
- 229910000019 calcium carbonate Inorganic materials 0.000 description 1
- 239000000378 calcium silicate Substances 0.000 description 1
- 229910052918 calcium silicate Inorganic materials 0.000 description 1
- OYACROKNLOSFPA-UHFFFAOYSA-N calcium;dioxido(oxo)silane Chemical compound [Ca+2].[O-][Si]([O-])=O OYACROKNLOSFPA-UHFFFAOYSA-N 0.000 description 1
- 239000006229 carbon black Substances 0.000 description 1
- 239000004927 clay Substances 0.000 description 1
- 229910052570 clay Inorganic materials 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000003431 cross linking reagent Substances 0.000 description 1
- 229910002026 crystalline silica Inorganic materials 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- XXBDWLFCJWSEKW-UHFFFAOYSA-N dimethylbenzylamine Chemical compound CN(C)CC1=CC=CC=C1 XXBDWLFCJWSEKW-UHFFFAOYSA-N 0.000 description 1
- ZZTCPWRAHWXWCH-UHFFFAOYSA-N diphenylmethanediamine Chemical compound C=1C=CC=CC=1C(N)(N)C1=CC=CC=C1 ZZTCPWRAHWXWCH-UHFFFAOYSA-N 0.000 description 1
- 239000000806 elastomer Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 125000003700 epoxy group Chemical group 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- ANSXAPJVJOKRDJ-UHFFFAOYSA-N furo[3,4-f][2]benzofuran-1,3,5,7-tetrone Chemical compound C1=C2C(=O)OC(=O)C2=CC2=C1C(=O)OC2=O ANSXAPJVJOKRDJ-UHFFFAOYSA-N 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- 150000002366 halogen compounds Chemical class 0.000 description 1
- 125000000623 heterocyclic group Chemical group 0.000 description 1
- 150000002460 imidazoles Chemical class 0.000 description 1
- ZLNQQNXFFQJAID-UHFFFAOYSA-L magnesium carbonate Chemical compound [Mg+2].[O-]C([O-])=O ZLNQQNXFFQJAID-UHFFFAOYSA-L 0.000 description 1
- 239000001095 magnesium carbonate Substances 0.000 description 1
- 229910000021 magnesium carbonate Inorganic materials 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- FPYJFEHAWHCUMM-UHFFFAOYSA-N maleic anhydride Chemical compound O=C1OC(=O)C=C1 FPYJFEHAWHCUMM-UHFFFAOYSA-N 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 125000005395 methacrylic acid group Chemical group 0.000 description 1
- IKGXNCHYONXJSM-UHFFFAOYSA-N methanolate;zirconium(4+) Chemical compound [Zr+4].[O-]C.[O-]C.[O-]C.[O-]C IKGXNCHYONXJSM-UHFFFAOYSA-N 0.000 description 1
- 239000006082 mold release agent Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 150000001451 organic peroxides Chemical class 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- 239000012188 paraffin wax Substances 0.000 description 1
- 150000002989 phenols Chemical class 0.000 description 1
- 150000003003 phosphines Chemical class 0.000 description 1
- 150000003018 phosphorus compounds Chemical class 0.000 description 1
- 229920002857 polybutadiene Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- XPGAWFIWCWKDDL-UHFFFAOYSA-N propan-1-olate;zirconium(4+) Chemical compound [Zr+4].CCC[O-].CCC[O-].CCC[O-].CCC[O-] XPGAWFIWCWKDDL-UHFFFAOYSA-N 0.000 description 1
- 229910052895 riebeckite Inorganic materials 0.000 description 1
- 239000005060 rubber Substances 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical compound [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229920002545 silicone oil Polymers 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 229920006132 styrene block copolymer Polymers 0.000 description 1
- TXDNPSYEJHXKMK-UHFFFAOYSA-N sulfanylsilane Chemical compound S[SiH3] TXDNPSYEJHXKMK-UHFFFAOYSA-N 0.000 description 1
- 239000000454 talc Substances 0.000 description 1
- 229910052623 talc Inorganic materials 0.000 description 1
- 229920005992 thermoplastic resin Polymers 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- TUQOTMZNTHZOKS-UHFFFAOYSA-N tributylphosphine Chemical compound CCCCP(CCCC)CCCC TUQOTMZNTHZOKS-UHFFFAOYSA-N 0.000 description 1
- RXJKFRMDXUJTEX-UHFFFAOYSA-N triethylphosphine Chemical compound CCP(CC)CC RXJKFRMDXUJTEX-UHFFFAOYSA-N 0.000 description 1
- IUURMAINMLIZMX-UHFFFAOYSA-N tris(2-nonylphenyl)phosphane Chemical compound CCCCCCCCCC1=CC=CC=C1P(C=1C(=CC=CC=1)CCCCCCCCC)C1=CC=CC=C1CCCCCCCCC IUURMAINMLIZMX-UHFFFAOYSA-N 0.000 description 1
- WXAZIUYTQHYBFW-UHFFFAOYSA-N tris(4-methylphenyl)phosphane Chemical compound C1=CC(C)=CC=C1P(C=1C=CC(C)=CC=1)C1=CC=C(C)C=C1 WXAZIUYTQHYBFW-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Compositions Of Macromolecular Compounds (AREA)
- Epoxy Resins (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〈産業上の利用分野〉
本発明は、半導体装置を封止するためのエポキシ樹脂組
成物に関する。さらに詳しくは、樹脂封止型半導体装置
を実装する際のハンダ付は工程において封止樹脂にクラ
ックが発生するのを防止した半導体封止用エポキシ樹脂
組成物、特に耐湿性および成形性に優れた半導体封止用
エポキシ樹脂組成物に関するものである。DETAILED DESCRIPTION OF THE INVENTION <Industrial Application Field> The present invention relates to an epoxy resin composition for encapsulating a semiconductor device. More specifically, for soldering when mounting resin-sealed semiconductor devices, we use epoxy resin compositions for semiconductor encapsulation that prevent cracks from occurring in the encapsulation resin during the process, especially those with excellent moisture resistance and moldability. The present invention relates to an epoxy resin composition for semiconductor encapsulation.
〈従来の技術〉
近年、半導体集積回路の分野において、高集積化、高信
頼性化の技術開発と同時に配線板への半導体装置組立工
程の自動化が推進されている。たとえばフラットパッケ
ージ型の半導体装置を回路板に取付ける場合、従来はリ
ードピンごとに半田付けを行っていたが、最近は半導体
装置全体を250℃以上に加熱した半田浴に浸漬して半
田付けを行う表面実装方式が採用されている。そのため
従来の封止用樹脂で封止したパッケージは半田付は時に
樹脂部分にクラックか発生し、信頼性が低下して製品と
して使用できないという問題が起きている。<Prior Art> In recent years, in the field of semiconductor integrated circuits, along with the development of technologies for higher integration and higher reliability, automation of the process of assembling semiconductor devices onto wiring boards has been promoted. For example, when attaching a flat package type semiconductor device to a circuit board, conventionally each lead pin was soldered individually, but recently the entire semiconductor device is immersed in a solder bath heated to 250°C or higher to solder the surface. The implementation method is adopted. Therefore, when soldering a package sealed with conventional sealing resin, cracks sometimes occur in the resin part, reducing reliability and making it unusable as a product.
また、半導体の封止方法としては、エポキシ樹脂に硬化
剤および充填材などを添加した組成物を用い、半導体素
子を金型にセットしてトランスファー成形法などにより
封止する方法か一般的に行われている。In addition, as a method for encapsulating semiconductors, the most common method is to use a composition made of epoxy resin with a hardening agent, a filler, etc., set the semiconductor element in a mold, and encapsulate it by transfer molding or the like. It is being said.
これら半導体封止樹脂に要求される特性としては、信頼
性、半田耐熱性および成形性などがあり、信頼性として
は耐湿性か、成形性としてはパリ、熱時硬度などが挙げ
られる。The properties required of these semiconductor encapsulating resins include reliability, soldering heat resistance, and moldability, and reliability includes moisture resistance, and moldability includes Paris and hardness when heated.
ここでいう耐湿性とは、高温、高湿環境下に樹脂封止半
導体装置した場合に、封止樹脂や封止樹脂とリードフレ
ームとの界面を通って水分が侵入することにより、半導
体が故障するのを防止することであり、近年半導体の集
積度が向上すると共に、より高度の耐湿性が要求される
ようになった。Moisture resistance here means that when a resin-encapsulated semiconductor device is placed in a high-temperature, high-humidity environment, moisture may enter through the encapsulation resin or the interface between the encapsulation resin and the lead frame, causing the semiconductor to fail. In recent years, as the degree of integration of semiconductors has improved, a higher degree of moisture resistance has become required.
封止樹脂の耐湿性を向上するために、通常はシランカッ
プリング剤が添加されており、具体的には、エポキシシ
ランを添加する方法(特公昭62−17640号公報)
およびビニルシランを添加する方法(特開昭62−22
3219、特開昭57−155753号公報)などが提
案されている。In order to improve the moisture resistance of the sealing resin, a silane coupling agent is usually added, and specifically, a method of adding epoxy silane (Japanese Patent Publication No. 17640/1983)
and a method of adding vinyl silane (JP-A-62-22
3219, Japanese Unexamined Patent Publication No. 57-155753), etc. have been proposed.
また、封止樹脂の耐半田クラック性を向上するための従
来法としては、たとえばビフェニル型のエポキシ樹脂を
用いる方法(特開昭63−251419号公報)などが
提案されている。Furthermore, as a conventional method for improving the solder crack resistance of the sealing resin, a method using a biphenyl type epoxy resin (Japanese Patent Laid-Open No. 63-251419) has been proposed.
〈発明が解決しようとする課題〉
しかしながら、耐湿性を改良するためにエポキシシラン
やビニルシランを添加する方法では、これらの添加によ
る耐湿性や半田耐熱性の向上がいまた十分てはなく、製
品として使用するのは困難であった。<Problem to be solved by the invention> However, in the method of adding epoxy silane or vinyl silane to improve moisture resistance, the addition of these does not sufficiently improve moisture resistance or soldering heat resistance, and it is difficult to use them as a product. It was difficult to do so.
また、ビフェニル型のエポキシ樹脂とエポキシシランを
用いる方法では、封止樹脂の耐半田クラック性はある程
度向上するものの満足できるレベルではないばかりか、
耐湿性が低いうえに、成形時に熱時硬度が低く、パリが
多いなどの問題があり実用的ではなかった。In addition, in the method using biphenyl-type epoxy resin and epoxy silane, the solder crack resistance of the sealing resin is improved to some extent, but not only is it not at a satisfactory level.
In addition to low moisture resistance, it had problems such as low hardness when heated and a lot of flaking during molding, making it impractical.
そこで本発明の課題は、上述したエポキシ樹脂組成物が
有する問題を解決し、半田耐熱性、耐湿性なとの信頼性
、およびパリ、熱時硬度などの成形性に優れたエポキシ
樹脂組成物を提供して、表面実装用の樹脂封止半導体を
可能にすることにある。Therefore, the object of the present invention is to solve the problems of the above-mentioned epoxy resin compositions, and to develop an epoxy resin composition that has reliability such as soldering heat resistance and moisture resistance, and excellent moldability such as Paris and hot hardness. An object of the present invention is to provide a resin-sealed semiconductor for surface mounting.
く課題を解決するための手段〉
本発明者らは、多官能シランカップリング剤の使用によ
り、上記の課題を達成し、目的に合致した半導体封止用
エポキシ樹脂組成物が得られることを見出し、本発明に
到達した。Means for Solving the Problems The present inventors have discovered that by using a polyfunctional silane coupling agent, the above problems can be achieved and an epoxy resin composition for semiconductor encapsulation that meets the purpose can be obtained. , arrived at the present invention.
すなわち本発明は、エポキシ樹脂(A)、硬化剤(B)
、充填材(C)および多官能シランカップリング剤(D
)からなる半導体封止用エポキシ樹脂組成物を提供する
ものである。That is, the present invention comprises an epoxy resin (A), a curing agent (B)
, filler (C) and polyfunctional silane coupling agent (D
) An epoxy resin composition for semiconductor encapsulation is provided.
以下本発明の構成を詳述する。The configuration of the present invention will be explained in detail below.
本発明におけるエポキシ樹脂(A)は、その分子中にエ
ポキシ基を少なくとも2個以上有するものであれば特に
限定されず、これらの具体例としでは、たとえばクレゾ
ールノボラック型エポキシ樹脂、フェノールノボラック
型エポキシ樹脂、次式(I)で表される骨格を有するビ
フェニル型エポキシ樹脂(a)
(たたし、R1−R8は水素原子、01〜C4の低級ア
ルキル基またはハロゲン原子を示す。)次式■て表され
るノボラック型エポキシ樹脂、・・・・・[F]
ビスフェノールAやレゾルシンなどから合成される各種
ノボラック型エポキシ樹脂、ビスフエノールA型エポキ
シ樹脂、線状脂肪族エポキシ樹脂、脂環式エポキシ樹脂
、複素環式エポキシ樹脂およびハロゲン化エポキシ樹脂
などが挙げられる。The epoxy resin (A) in the present invention is not particularly limited as long as it has at least two epoxy groups in its molecule, and specific examples thereof include cresol novolac type epoxy resin, phenol novolac type epoxy resin, etc. , biphenyl type epoxy resin (a) having a skeleton represented by the following formula (I) (R1 to R8 represent a hydrogen atom, a lower alkyl group of 01 to C4, or a halogen atom) Novolac type epoxy resins represented, ... [F] Various novolac type epoxy resins synthesized from bisphenol A, resorcin, etc., bisphenol A type epoxy resins, linear aliphatic epoxy resins, alicyclic epoxy resins , heterocyclic epoxy resins and halogenated epoxy resins.
用途によっては二種類以上のエポキシ樹脂を併用しても
よいが、半導体封止樹脂用としては半田耐熱性の点から
ビフェニル型エポキシ樹脂(a)を、全エポキシ樹脂中
に30重量%以上含むことが好ましい。Depending on the application, two or more types of epoxy resins may be used together, but for semiconductor encapsulation resins, from the viewpoint of soldering heat resistance, the total epoxy resin should contain at least 30% by weight of biphenyl-type epoxy resin (a). is preferred.
ビフェニル型エポキシ樹脂(a)の好ましい具体例とし
ては、4.4’−ビス(2,3−エポキシプロポキシ)
ビフェニル、4.4’−ビス(2,3エポキシプロポキ
シ) −3,3’ 、 5.5’ −テトラメチルビフ
ェニル、4.4′−ビス< 2.3−エポキシプロポキ
シ) −3,3’ 、 5.5’ −テトラメチル−2
−クロロビフェニル、4.4’ −ビス(2,3−エポ
キシプロポキシ) −3,3’ 、 5゜5′−テトラ
メチル−2−ブロモビフェニル、4.4′−ビス(2,
3−エポキシプロポキシ)3.3’、5.5’ −テト
ラエチルビフェニルおよび4.4′−ビス(2,3−エ
ポキシプロポキシ)−3,3’ 、 5.5’ −テト
ラブチルビフェニルなどが挙げられる。A preferred specific example of the biphenyl-type epoxy resin (a) is 4,4'-bis(2,3-epoxypropoxy)
biphenyl, 4,4'-bis(2,3-epoxypropoxy)-3,3', 5,5'-tetramethylbiphenyl, 4,4'-bis<2,3-epoxypropoxy)-3,3', 5.5'-tetramethyl-2
-chlorobiphenyl, 4,4'-bis(2,3-epoxypropoxy)-3,3', 5゜5'-tetramethyl-2-bromobiphenyl, 4,4'-bis(2,
Examples include 3-epoxypropoxy) 3.3', 5.5'-tetraethylbiphenyl and 4.4'-bis(2,3-epoxypropoxy)-3,3', 5.5'-tetrabutylbiphenyl. .
本発明における硬化、剤(B)は、エポキシ樹脂(^)
と反応して硬化させるものであれば特に限定されず、そ
れらの具体例としては、たとえばフェノールノボラック
樹脂、クレゾールノボラック樹脂、下記式0で表される
ノボラック樹脂、・・・・僅
ビスフェノールAやレゾルシンから合成される各種ノボ
ラック樹脂、各種多価フェノール化合物、無水マレイン
酸、無水フタル酸、無水ピロメリット酸などの酸無水物
およびメタフェニレンジアミン、ジアミノジフェニルメ
タン、ジアミノジフェニルスルホンなどの芳香族アミン
などが挙げられる。半導体装置封止用としては、耐熱性
、耐湿性および保存性の点から、フェノールノボラック
、クレゾールノボラックなどのノボラック樹脂か好まし
く用いられ、用途によっては二種以上の硬化剤を併用し
てもよい。The curing agent (B) in the present invention is an epoxy resin (^)
It is not particularly limited as long as it is cured by reacting with the resin, and specific examples thereof include phenol novolak resin, cresol novolak resin, novolac resin represented by the following formula 0, ... slight bisphenol A and resorcinol. Examples include various novolac resins synthesized from various novolak resins, various polyhydric phenol compounds, acid anhydrides such as maleic anhydride, phthalic anhydride, and pyromellitic anhydride, and aromatic amines such as metaphenylene diamine, diaminodiphenylmethane, and diaminodiphenylsulfone. It will be done. For encapsulating semiconductor devices, novolak resins such as phenol novolac and cresol novolak are preferably used from the viewpoint of heat resistance, moisture resistance and storage stability, and two or more types of curing agents may be used in combination depending on the purpose.
本発明において、エポキシ樹脂(A)と硬化剤(B)の
配合比は、機械的性質および耐湿性の点から(A)に対
する(B)の化学当量比が0.5〜1゜6、特に0.8
〜1.3の範囲にあることが好ましい。In the present invention, the compounding ratio of the epoxy resin (A) and the curing agent (B) is such that the chemical equivalent ratio of (B) to (A) is 0.5 to 1°6, particularly from the viewpoint of mechanical properties and moisture resistance. 0.8
It is preferably in the range of 1.3 to 1.3.
また、本発明においてエポキシ樹脂(A)と硬化剤(B
)の硬化反応を促進するため硬化触媒を用いてもよい。In addition, in the present invention, epoxy resin (A) and curing agent (B
) A curing catalyst may be used to accelerate the curing reaction.
硬化触媒は硬化反応を促進するものならば特に限定され
ず、たとえば2−メチルイミダゾール、2.4−ジメチ
ルイミダゾール、2−エチル−4−メチルイミダゾール
、2−フェニルイミダゾール、2−フェニル−4−メチ
ルイミダゾール、2−ヘプタデシルイミダゾールなどの
イミダゾール化合物、トリエチルアミン、ベンジルジメ
チルアミン、a−メチルベンジルジメチルアミン、2−
(ジメチルアミノメチル)フェノール、2.4.6−)
リス(ジメチルアミノメチル)フェノール、l、8−ジ
アザビシクロ(5,4,0)ウンデセン−7などの3級
アミン化合物、ジルコニウムテトラメトキシド、ジルコ
ニウムテトラプロポキシド、テトラキス(アセチルアセ
トナト)ジルコニウム、トリ(アセチルアセトナト)ア
ルミニウムなどの有機金属化合物およびトリフェニルホ
スフィン、トリメチルホスフィン、トリエチルホスフィ
ン、トリブチルホスフィン、トリ(p−メチルフェニル
)ホスフィン、トリ(ノニルフェニル)ホスフィンなど
の有機ホスフィン化合物(F)挙げられる。なかでも耐
湿性の点から、有機ボスフィン化合物(F)が好ましく
、トリフェニルホスフィンが特に好ましく用いられる。The curing catalyst is not particularly limited as long as it promotes the curing reaction, and examples thereof include 2-methylimidazole, 2,4-dimethylimidazole, 2-ethyl-4-methylimidazole, 2-phenylimidazole, and 2-phenyl-4-methyl. Imidazole compounds such as imidazole and 2-heptadecyl imidazole, triethylamine, benzyldimethylamine, a-methylbenzyldimethylamine, 2-
(dimethylaminomethyl)phenol, 2.4.6-)
Lis(dimethylaminomethyl)phenol, tertiary amine compounds such as l,8-diazabicyclo(5,4,0)undecene-7, zirconium tetramethoxide, zirconium tetrapropoxide, tetrakis(acetylacetonato)zirconium, tri( Examples include organometallic compounds such as acetylacetonato)aluminum, and organic phosphine compounds (F) such as triphenylphosphine, trimethylphosphine, triethylphosphine, tributylphosphine, tri(p-methylphenyl)phosphine, and tri(nonylphenyl)phosphine. Among them, from the viewpoint of moisture resistance, organic bosphine compounds (F) are preferred, and triphenylphosphine is particularly preferably used.
これらの硬化触媒は、用途によっては二種以上を併用し
てもよく、その添加量はエポキシ樹脂(A)100重量
部に対して0.1〜10重量部の範囲が好ましい。Two or more of these curing catalysts may be used in combination depending on the application, and the amount added is preferably in the range of 0.1 to 10 parts by weight per 100 parts by weight of the epoxy resin (A).
本発明における充填剤(C)としては、溶融シリカ、結
晶性シリカ、炭酸カルシウム、炭酸マグネシウム、アル
ミナ、マグネシア、クレータルク、ケイ酸カルシウム、
酸化チタン、アスベスト、ガラス繊維などが挙げられる
。なかでも溶融シリカは線膨張係数を低下させる効果が
大きく、低応力化に有効なため好ましく用いられる。さ
らには、充填剤(C)の割合が全体の75〜90重量%
であり、かつ充填剤が平均粒径1〇−以下の破砕溶融シ
リカ(C′)を全シリカ中40重量%以上含むことが、
半田耐熱性の点で好ましい。The filler (C) in the present invention includes fused silica, crystalline silica, calcium carbonate, magnesium carbonate, alumina, magnesia, clay talc, calcium silicate,
Examples include titanium oxide, asbestos, and glass fiber. Among them, fused silica is preferably used because it has a large effect of lowering the coefficient of linear expansion and is effective in reducing stress. Furthermore, the proportion of filler (C) is 75 to 90% by weight of the whole.
and the filler contains 40% by weight or more of crushed fused silica (C') with an average particle size of 10- or less based on the total silica,
Preferable in terms of soldering heat resistance.
なお、ここで平均粒径とは累積重量50%になる粒径(
メジアン径)を意味する。Note that the average particle size here refers to the particle size that accounts for 50% of the cumulative weight (
median diameter).
本発明におけるシランカップリング剤(D)は、多官能
シランカップリング剤である。多官能シランカップリン
グ剤(D)の具体例としては、次式■で表されるものが
挙げられる。The silane coupling agent (D) in the present invention is a polyfunctional silane coupling agent. Specific examples of the polyfunctional silane coupling agent (D) include those represented by the following formula (2).
X−N−R’−8i (OR2) n
(R1は炭素数1〜20の二価の炭化水素基、R2は水
素原子、炭素数1〜20のm個の炭化水素基、nは1〜
3の整数を各々示す、Xは2−アミノエチル基、グリシ
ジル基、メタクリル基またはヒドリド基を、Yはアリル
基、トリメトキシシリルプロピル基、ジメトキシメチル
グロビル基、またはグリシジル基を示す、)本発明にお
ける多官能シランカップリング剤(D)の具体例として
は、3−[N−アリル−N(2−アミノエチル)]アミ
ノプロピルトリメトキシシラン、N、N−ビス[3−(
トリメトキシシリル〉プロビルコメタクリルアミド、3
−(N−アリル−N−グリシジル)アミノプロピルトリ
メトキシシラン、3− (N、N−ジグリシジル)アミ
ノプロピルトリメトキシシラン、3−[N−アリル−N
−グリシジル)アミノプロピルトリメトキシシランおよ
び3−(N−アリル−N−メタクリル)アミノプロピル
トリメトキシシランなどが挙げられる。X-N-R'-8i (OR2) n (R1 is a divalent hydrocarbon group having 1 to 20 carbon atoms, R2 is a hydrogen atom, m hydrocarbon groups having 1 to 20 carbon atoms, n is 1 to
each represents an integer of 3, X represents a 2-aminoethyl group, glycidyl group, methacrylic group, or hydride group, Y represents an allyl group, trimethoxysilylpropyl group, dimethoxymethylglobyl group, or glycidyl group) Specific examples of the polyfunctional silane coupling agent (D) in the invention include 3-[N-allyl-N(2-aminoethyl)]aminopropyltrimethoxysilane, N,N-bis[3-(
trimethoxysilyl>provircomethacrylamide, 3
-(N-allyl-N-glycidyl)aminopropyltrimethoxysilane, 3-(N,N-diglycidyl)aminopropyltrimethoxysilane, 3-[N-allyl-N
-glycidyl)aminopropyltrimethoxysilane and 3-(N-allyl-N-methacryl)aminopropyltrimethoxysilane.
これらの多官能シランカッ1リング剤(D)の添加量は
、通常、充填剤1001!量部に対して0.1〜5重量
部、好ましくは0.2〜3重量部、特に好ましくは0.
3〜1.5重量部であり、さらには用途に応じて、−官
能のエポキシシラン、メルカプトシラン、アミノシラン
、ビニルシランなどの他のシランカップリング剤を併用
することができる。The amount of these polyfunctional silane cutting agents (D) added is usually 1001! 0.1 to 5 parts by weight, preferably 0.2 to 3 parts by weight, particularly preferably 0.
The amount is 3 to 1.5 parts by weight, and other silane coupling agents such as -functional epoxysilane, mercaptosilane, aminosilane, and vinylsilane may be used in combination depending on the purpose.
本発明において、充填剤(C)を多官能シランカップリ
ング剤(D)であらかじめ表面処理することが、信頼性
の点で好ましい。In the present invention, it is preferable from the viewpoint of reliability that the filler (C) is previously surface-treated with a polyfunctional silane coupling agent (D).
本発明の半導体封止用樹脂組成物には、ハロゲン化ボキ
シ樹脂などのハロゲン化合物、リン化合物などの難燃剤
、三酸化アンチモンなどの難燃助剤、カーボンブラック
、酸化鉄などの着色剤、シリコーンゴム、シリコーンオ
イル、スチレン系ブロック共重合体、オレフィン系共重
合体、変性ニトリルゴム、変性ポリブタジェンゴムなど
のエラストマー ポリエチレンなどの熱可塑性樹脂、チ
タネートカップリング剤などのカップリング剤、長鎖脂
肪酸、長鎖脂肪酸の金属塩、長鎖脂肪酸のエステル、長
鎖脂肪酸のアミド、パラフィンワックスなとの離型剤お
よび有機過酸化物などの架橋剤を任意に添加することが
できる。The resin composition for semiconductor encapsulation of the present invention includes halogen compounds such as halogenated boxy resin, flame retardants such as phosphorus compounds, flame retardant aids such as antimony trioxide, colorants such as carbon black and iron oxide, and silicone. Elastomers such as rubber, silicone oil, styrene block copolymers, olefin copolymers, modified nitrile rubber, modified polybutadiene rubber, thermoplastic resins such as polyethylene, coupling agents such as titanate coupling agents, long chain fatty acids , metal salts of long chain fatty acids, esters of long chain fatty acids, amides of long chain fatty acids, mold release agents such as paraffin wax, and crosslinking agents such as organic peroxides can be optionally added.
本発明のエポキシ樹脂組成物は溶融混練することにより
製造するのが好ましく、たとえばバンバリーミキサ−、
ニーダ−ロール、単軸もしくは二輪の押出機およびコニ
ーグーなどの公知の混線方法を用いて溶融混練すること
により、製造される。The epoxy resin composition of the present invention is preferably produced by melt-kneading, for example, using a Banbury mixer,
It is produced by melt-kneading using a known mixing method such as a kneader roll, a single-screw or two-wheel extruder, and a coney goo.
〈実施例〉 以下、実施例により本発明を具体的に説明する。<Example> Hereinafter, the present invention will be specifically explained with reference to Examples.
表1に示した配合処方に対し、表2に示した各種シラン
カップリング剤、表3に示した各種溶融シリカを各々表
4に示した組成比で試薬をミキサーによりトライブレン
ドした。これを、ロール表面温度90℃のミキシングロ
ールを用いて5分間加熱混線後、冷却、粉砕してエポキ
シ含有組成物を製造した。For the formulation shown in Table 1, various silane coupling agents shown in Table 2 and various fused silicas shown in Table 3 were tri-blended using a mixer at the composition ratios shown in Table 4. This was heated and mixed for 5 minutes using a mixing roll with a roll surface temperature of 90° C., then cooled and pulverized to produce an epoxy-containing composition.
この組成物を用い、低圧トランスファー成形法により1
75℃×4分の条件で5時間ポストキュアした。ポスト
キュア後、次の物性測定法により、各組成物の物性を測
定した。Using this composition, 1
Post-curing was performed for 5 hours at 75°C for 4 minutes. After post-curing, the physical properties of each composition were measured using the following physical property measuring method.
半田耐熱性:80pinQFP24個を85℃/85%
RHて50時間加湿後、2
60℃に加熱した半田浴に10秒
間浸漬し、クラックの発生しない
QFPの個数の割合を求めた。Soldering heat resistance: 85℃/85% for 24 80pin QFPs
After humidifying at RH for 50 hours, the QFPs were immersed in a solder bath heated to 260° C. for 10 seconds to determine the percentage of QFPs that did not develop cracks.
信 頼 性:44pinQFPを用い、120℃/85
%RH,バイアス電圧15
vでUSPCBTを行い、累積数
隙率50%になる時間を求めた。Reliability: 120℃/85 using 44pin QFP
USPCBT was performed at %RH and a bias voltage of 15 V, and the time required for the cumulative porosity to reach 50% was determined.
また、前記の方法で製造したエポキシ樹脂組成物を用い
て、下記の方法により成形性の評価を行った。Furthermore, using the epoxy resin composition produced by the above method, moldability was evaluated by the following method.
バ リ:低圧トランスファー成形法によりフラッシュ
金型を用いてレジンフラッ
シュを測定した。Flash: Resin flash was measured using a flash mold using a low-pressure transfer molding method.
熱時硬度:低圧トランスファー成形法により175℃×
2分の条件で成形し、熱時
硬度(ショアD)を測定した。Hardness when heated: 175℃× by low pressure transfer molding method
It was molded for 2 minutes and the hardness (Shore D) when heated was measured.
以上の評価結果をまとめて表4に示す。The above evaluation results are summarized in Table 4.
表4にみられるように、本発明の多官能シランカップリ
ング剤を用いた組成物(実施例1〜3)は半田耐熱性、
信頼性、パリおよび熱時硬度が均衡に優れている。As seen in Table 4, the compositions (Examples 1 to 3) using the polyfunctional silane coupling agent of the present invention have solder heat resistance,
Excellent balance in reliability, Paris and hot hardness.
これに対して本発明の多官能シランカップリング剤を使
用しない組成物(比較例1〜4)では半田耐熱性、信頼
性、パリおよび熱時硬度において劣っている。On the other hand, compositions that do not use the polyfunctional silane coupling agent of the present invention (Comparative Examples 1 to 4) are inferior in solder heat resistance, reliability, Paris, and hardness when heated.
また、特定のエポキシ樹脂を30重量%以上含有した本
発明のエポキシ樹脂組成物(実施例4〜5)は信頼性や
パリ、熱時硬度などの成形性が優れているうえに半田耐
熱性がさらに向上している。In addition, the epoxy resin compositions of the present invention containing 30% by weight or more of a specific epoxy resin (Examples 4 to 5) have excellent moldability such as reliability, Paris, and hot hardness, and have excellent soldering heat resistance. It's getting even better.
さらに、特定の溶融シリカを含有した本発明のエポキシ
樹脂組成物(実施例6〜9)はさらに半田耐熱性が向上
している。Furthermore, the epoxy resin compositions of the present invention containing specific fused silica (Examples 6 to 9) have further improved solder heat resistance.
〈発明の効果〉
本発明のエポキシ樹脂組成物は、多官能シランカップリ
ング剤、硬化剤、充填剤、エポキシ樹脂を配合したため
に、半田耐熱性、信頼性、成形性に優れており、半導体
封止用として理想的な性能を有している。<Effects of the Invention> Because the epoxy resin composition of the present invention contains a polyfunctional silane coupling agent, a curing agent, a filler, and an epoxy resin, it has excellent solder heat resistance, reliability, and moldability, and is suitable for semiconductor encapsulation. It has ideal performance as a stop.
Claims (2)
)および多官能シランカップリング剤(D)からなる半
導体封止用エポキシ樹脂組成物。(1) Epoxy resin (A), curing agent (B), filler (C
) and a polyfunctional silane coupling agent (D).
の低級アルキル基またはハロゲン原子を示す。) で表される骨格を有するエポキシ樹脂(a)を全エポキ
シ樹脂(A)中に30重量%以上含むことを特徴とする
請求項(1)記載の半導体封止用エポキシ樹脂組成物。(2) Epoxy resin (A) has the following formula (I) ▲There are mathematical formulas, chemical formulas, tables, etc.▼...(I) (However, R^1 to R^8 are hydrogen atoms, C_1 to C_4
represents a lower alkyl group or a halogen atom. The epoxy resin composition for semiconductor encapsulation according to claim 1, characterized in that the total epoxy resin (A) contains 30% by weight or more of the epoxy resin (a) having a skeleton represented by the following formula.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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JP2173513A JP2643547B2 (en) | 1990-06-29 | 1990-06-29 | Epoxy resin composition for semiconductor encapsulation |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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JP2173513A JP2643547B2 (en) | 1990-06-29 | 1990-06-29 | Epoxy resin composition for semiconductor encapsulation |
Publications (2)
Publication Number | Publication Date |
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JPH0459862A true JPH0459862A (en) | 1992-02-26 |
JP2643547B2 JP2643547B2 (en) | 1997-08-20 |
Family
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Application Number | Title | Priority Date | Filing Date |
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JP2173513A Expired - Fee Related JP2643547B2 (en) | 1990-06-29 | 1990-06-29 | Epoxy resin composition for semiconductor encapsulation |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0589143A2 (en) * | 1992-09-21 | 1994-03-30 | Sumitomo Bakelite Company Limited | Epoxy resin composition based on diglycidylether of biphenyldiol |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03134014A (en) * | 1989-10-19 | 1991-06-07 | Mitsui Toatsu Chem Inc | Thermosetting resin composition for semiconductor sealing |
JPH03134016A (en) * | 1989-10-20 | 1991-06-07 | Shin Etsu Chem Co Ltd | Epoxy resin composition for semiconductor sealing and semiconductor device |
JPH03192150A (en) * | 1989-12-21 | 1991-08-22 | Matsushita Electric Works Ltd | Semiconductor-sealing epoxy resin composition |
JPH03192151A (en) * | 1989-12-21 | 1991-08-22 | Matsushita Electric Works Ltd | Semiconductor-sealing epoxy resin composition |
JPH03285943A (en) * | 1990-04-02 | 1991-12-17 | Matsushita Electric Works Ltd | Molding material of epoxy resin |
-
1990
- 1990-06-29 JP JP2173513A patent/JP2643547B2/en not_active Expired - Fee Related
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03134014A (en) * | 1989-10-19 | 1991-06-07 | Mitsui Toatsu Chem Inc | Thermosetting resin composition for semiconductor sealing |
JPH03134016A (en) * | 1989-10-20 | 1991-06-07 | Shin Etsu Chem Co Ltd | Epoxy resin composition for semiconductor sealing and semiconductor device |
JPH03192150A (en) * | 1989-12-21 | 1991-08-22 | Matsushita Electric Works Ltd | Semiconductor-sealing epoxy resin composition |
JPH03192151A (en) * | 1989-12-21 | 1991-08-22 | Matsushita Electric Works Ltd | Semiconductor-sealing epoxy resin composition |
JPH03285943A (en) * | 1990-04-02 | 1991-12-17 | Matsushita Electric Works Ltd | Molding material of epoxy resin |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0589143A2 (en) * | 1992-09-21 | 1994-03-30 | Sumitomo Bakelite Company Limited | Epoxy resin composition based on diglycidylether of biphenyldiol |
EP0589143A3 (en) * | 1992-09-21 | 1994-09-28 | Sumitomo Bakelite Co | Epoxy resin composition based on diglycidylether of biphenyldiol |
SG87725A1 (en) * | 1992-09-21 | 2002-04-16 | Sumitomo Bakelite Co | Epoxy resin composition |
Also Published As
Publication number | Publication date |
---|---|
JP2643547B2 (en) | 1997-08-20 |
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