JPH0459274B2 - - Google Patents
Info
- Publication number
- JPH0459274B2 JPH0459274B2 JP19533384A JP19533384A JPH0459274B2 JP H0459274 B2 JPH0459274 B2 JP H0459274B2 JP 19533384 A JP19533384 A JP 19533384A JP 19533384 A JP19533384 A JP 19533384A JP H0459274 B2 JPH0459274 B2 JP H0459274B2
- Authority
- JP
- Japan
- Prior art keywords
- ceramic substrate
- metallized metal
- glaze
- metal part
- paste
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 68
- 239000000919 ceramic Substances 0.000 claims description 67
- 229910052751 metal Inorganic materials 0.000 claims description 47
- 239000002184 metal Substances 0.000 claims description 47
- 238000000034 method Methods 0.000 claims description 15
- 238000004519 manufacturing process Methods 0.000 claims description 11
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229910052763 palladium Inorganic materials 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 229910052703 rhodium Inorganic materials 0.000 claims description 3
- 239000010948 rhodium Substances 0.000 claims description 3
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims description 3
- 238000009429 electrical wiring Methods 0.000 description 13
- 239000010409 thin film Substances 0.000 description 8
- 239000011521 glass Substances 0.000 description 6
- 239000006060 molten glass Substances 0.000 description 6
- 239000000843 powder Substances 0.000 description 6
- 239000002904 solvent Substances 0.000 description 5
- LTPBRCUWZOMYOC-UHFFFAOYSA-N Beryllium oxide Chemical compound O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 4
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- 239000011733 molybdenum Substances 0.000 description 4
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 238000007639 printing Methods 0.000 description 3
- 238000007650 screen-printing Methods 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- WUOACPNHFRMFPN-SECBINFHSA-N (S)-(-)-alpha-terpineol Chemical compound CC1=CC[C@@H](C(C)(C)O)CC1 WUOACPNHFRMFPN-SECBINFHSA-N 0.000 description 1
- RUMACXVDVNRZJZ-UHFFFAOYSA-N 2-methylpropyl 2-methylprop-2-enoate Chemical compound CC(C)COC(=O)C(C)=C RUMACXVDVNRZJZ-UHFFFAOYSA-N 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- -1 B 2 O 3 Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910017709 Ni Co Inorganic materials 0.000 description 1
- 229910003267 Ni-Co Inorganic materials 0.000 description 1
- 229910003262 Ni‐Co Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- OVKDFILSBMEKLT-UHFFFAOYSA-N alpha-Terpineol Natural products CC(=C)C1(O)CCC(C)=CC1 OVKDFILSBMEKLT-UHFFFAOYSA-N 0.000 description 1
- 229940088601 alpha-terpineol Drugs 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000740 bleeding effect Effects 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000007606 doctor blade method Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 229910000833 kovar Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Landscapes
- Electronic Switches (AREA)
- Inorganic Insulating Materials (AREA)
- Insulating Bodies (AREA)
- Manufacturing Of Printed Wiring (AREA)
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明はグレーズドセラミツク基板の製造方法
に関し、より詳細には微細電気配線の形成を可能
とするグレーズドセラミツク基板の製造方法に関
するものである。DETAILED DESCRIPTION OF THE INVENTION (Industrial Application Field) The present invention relates to a method for manufacturing a glazed ceramic substrate, and more particularly to a method for manufacturing a glazed ceramic substrate that allows the formation of fine electrical wiring.
（従来の技術）
セラミツク基板の表面にガラスから成るグレー
ズ層を熔着させたグレーズドセラミツク基板は基
板表面の平滑性が優れていることから薄膜電気配
線を形成する基板として多用されている。(Prior Art) Glazed ceramic substrates, in which a glaze layer made of glass is welded to the surface of a ceramic substrate, are often used as substrates for forming thin film electrical wiring because of their excellent surface smoothness.
この従来のグレーズドセラミツク基板は通常、
アルミナ、ベリリア等から成るセラミツク基板の
表面に、SiO2，B2O3，Al2O3等から成るガラス
粉末に適当な溶媒、溶剤を添加し、ペースト状と
なしたものをスクリーン印刷法により塗布し、し
かる后前記セラミツク基板を焼成し、グレーズ用
ペーストをセラミツク基板に熔着させることによ
つて作製されており、表面にタングステン（Ｗ）、
モリブデン（Mo）等のメタライズ金属部を有す
るセラミツク基板の場合にはグレーズ用ペースト
をメタライズ金属部を除くセラミツク基板の表面
のみに塗布することによつて作製されている。 This traditional glazed ceramic substrate is typically
A glass powder made of SiO 2 , B 2 O 3 , Al 2 O 3 , etc. is added to a suitable solvent to form a paste onto the surface of a ceramic substrate made of alumina, beryllia, etc. by screen printing. The glaze paste is coated on the ceramic substrate, and then the ceramic substrate is fired and the glaze paste is welded to the ceramic substrate.
In the case of a ceramic substrate having a metallized metal part such as molybdenum (Mo), it is manufactured by applying a glaze paste only to the surface of the ceramic substrate excluding the metallized metal part.
（発明が解決しようとする問題点）
しかし乍ら、このメタライズ金属部を有するセ
ラミツク基板にグレーズ層を熔着させる場合、メ
タライズ金属部を除くセラミツク基板の表面のみ
にグレーズ用ペーストを塗布するためにメタライ
ズ金属部へのグレーズ用ペーストの付着を防止す
る特殊なマスクを準備しなければならず、該マス
クが高価であること及びマスクとセラミツク基板
との位置合せが面倒で量産性が悪いこと等から製
品としてのグレーズドセラミツク基板を高コスト
とする欠点を有していた。(Problem to be Solved by the Invention) However, when a glaze layer is welded to a ceramic substrate having a metallized metal part, it is difficult to apply a glaze paste only to the surface of the ceramic substrate excluding the metallized metal part. A special mask must be prepared to prevent the glaze paste from adhering to the metallized metal parts, and this mask is expensive and the alignment of the mask and the ceramic substrate is troublesome, making it difficult to mass-produce. This has the drawback of making the glazed ceramic substrate as a product expensive.
またグレーズ用ペーストは極めて印刷性が悪
く、にじみを発生し易いことからセラミツク基板
のメタライズ金属部を除く表面のみにグレーズ用
ペーストを印刷塗布するには、グレーズ用ペース
トのにじみを考慮し、メタライズ金属部より一定
の間隔をあけて印刷塗布する必要がある。 In addition, glaze paste has extremely poor printability and bleeds easily. Therefore, in order to print glaze paste only on the surface of the ceramic substrate excluding the metallized metal parts, it is necessary to take into account the bleed of the glaze paste, and to It is necessary to print and coat at regular intervals.
しかし乍ら、グレーズ用ペーストのにじみは不
規則であり、予想より少なかつた場合、セラミツ
ク基板表面のメタライズ金属部周辺にはグレーズ
層を熔着させることができず、該グレーズ層のな
い部分に微細電気配線が施こされるとセラミツク
基板の表面粗さに起因して断線を生じ、微細電気
配線基板としての機能が完全に喪失してしまうと
いう欠点も有していた。 However, the bleeding of the glaze paste is irregular, and if it is less than expected, the glaze layer cannot be fused around the metallized metal part on the surface of the ceramic substrate, and the glaze layer cannot be fused to the area where there is no glaze layer. Another drawback is that when fine electrical wiring is applied, wire breakage occurs due to the surface roughness of the ceramic substrate, and the function as a fine electrical wiring board is completely lost.
（発明の目的）
本発明は上記欠点に鑑み案出されたもので、そ
の目的は特殊なマスクを使用することなくメタラ
イズ金属部を除くセラミツク基板の表面全面にグ
レース層を熔着させることができ、微細電気配線
の断線を皆無とする安価なグレーズドセラミツク
基板の製造方法を提供することにある。(Object of the Invention) The present invention was devised in view of the above-mentioned drawbacks, and its purpose is to be able to weld a grace layer to the entire surface of a ceramic substrate except for metallized metal parts without using a special mask. Another object of the present invention is to provide an inexpensive method for manufacturing a glazed ceramic substrate that eliminates any disconnection of fine electrical wiring.
（問題点を解決するための手段）
本発明のグレーズドセラミツク基板の製造方法
はメタライズ金属部を含むセラミツク基板表面全
面にグレーズ用ペーストを塗布するとともに還元
雰囲気中で焼成し、これによりメタライズ金属部
上のグレーズ用ペーストを該金属部上よりセラミ
ツク基板表面に移行させ、実質上メタライズ金属
部を除くセラミツク基板表面のみにグレーズ層を
熔着させることを特徴とするものである。(Means for Solving the Problems) The method for manufacturing a glazed ceramic substrate of the present invention involves applying a glaze paste to the entire surface of the ceramic substrate including the metallized metal part and firing it in a reducing atmosphere. The glaze paste is transferred onto the surface of the ceramic substrate from above the metal portion, and the glaze layer is welded only to the surface of the ceramic substrate substantially excluding the metallized metal portion.
（実施例）
次に本発明を添付図面に基づいて詳細に説明す
る。(Example) Next, the present invention will be described in detail based on the accompanying drawings.
図は本発明のグレーズドセラミツク基板の製造
方法により製作したグレーズドセラミツク基板の
一部拡大断面図を示し、１はアルミナ、ベリリア
等のセラミツクから成る基板であり、２はモリブ
デン（Mo）、タングステン（Ｗ）等から成るメ
タライズ金属部である。 The figure shows a partially enlarged cross-sectional view of a glazed ceramic substrate manufactured by the method of manufacturing a glazed ceramic substrate of the present invention. 1 is a substrate made of ceramic such as alumina or beryllia, and 2 is a substrate made of molybdenum (Mo) or tungsten (W). ) etc. is a metallized metal part.
前記メタライズ金属部２を有するセラミツク基
板１はセラミツク粉末にアクリル樹脂、トルエン
等の適当な溶媒及び溶剤を混合し、これをドクタ
ーブレード法やカレンダーロール法等によつてシ
ート状となしたセラミツクグリーンシートに、従
来周知の打抜加工法により貫通孔を形成し、該貫
通孔内に、モリブデン（Mo）、タングステン
（Ｗ）等の金属粉末に有機溶剤を混合して成る導
体ペーストをスクリーン印刷法により印刷埋入す
るとともに焼成し、焼結一体化させることによつ
て形成される。 The ceramic substrate 1 having the metallized metal portion 2 is a ceramic green sheet obtained by mixing ceramic powder with an appropriate solvent such as acrylic resin or toluene and forming the mixture into a sheet by a doctor blade method, a calender roll method, or the like. A through hole is formed using a well-known punching method, and a conductive paste made of metal powder such as molybdenum (Mo) or tungsten (W) mixed with an organic solvent is applied into the through hole using a screen printing method. It is formed by printing, embedding, firing, and sintering into one piece.
前記セラミツク基板１のメタライズ金属部２を
除く表面にはグレーズ層３が熔着されており、該
グレーズ層３表面には微細電気配線４が従来周知
の薄膜手法により被着形成される。 A glaze layer 3 is welded to the surface of the ceramic substrate 1 except for the metallized metal portion 2, and a fine electrical wiring 4 is formed on the surface of the glaze layer 3 by a conventionally well-known thin film method.
前記セラミツク基板１表面のグレーズ層３は
SiO2−BaO−Al2O3−CaO系のガラスから成り、
後述する方法により、メタライズ金属部２を除く
セラミツク基板１表面に熔着される。 The glaze layer 3 on the surface of the ceramic substrate 1 is
Made of SiO 2 −BaO−Al 2 O 3 −CaO glass,
It is welded to the surface of the ceramic substrate 1 excluding the metallized metal portion 2 by a method described later.
また前記メタライズ金属部２のセラミツク基板
１底面部にはコバール金属（Fe−Ni−Co合金）
あるいは42Alloyから成る外部リードピン５が銀
ロウ等のロウ材を介しロウ付けされており、該外
部リードピン５はグレーズ層３上に形成される微
細薄膜電気配線４を他の外部回路に電気的に接続
する作用を為す。 Further, the bottom surface of the ceramic substrate 1 of the metallized metal portion 2 is made of Kovar metal (Fe-Ni-Co alloy).
Alternatively, an external lead pin 5 made of 42Alloy is brazed with a soldering material such as silver solder, and the external lead pin 5 electrically connects the fine thin film electrical wiring 4 formed on the glaze layer 3 to other external circuits. It has the effect of
かくして、前記セラミツク基板１上のグレーズ
層３表面にアルミニウム（Al）銅（Cu）等の金
属から成る微細電気配線４がその一部をメタライ
ズ金属部２に重畳するように被着形成され、これ
によつて微細薄膜電気配線板が得られる。 In this way, a fine electrical wiring 4 made of metal such as aluminum (Al) or copper (Cu) is deposited on the surface of the glaze layer 3 on the ceramic substrate 1 so that a part thereof overlaps with the metallized metal part 2. A fine thin film electrical wiring board is obtained by this method.
次に前記セラミツク基板１のメタライズ金属部
２を除く表面にグレーズ層３を熔着する方法につ
いて詳述する。 Next, a method for welding the glaze layer 3 to the surface of the ceramic substrate 1 excluding the metallized metal portion 2 will be described in detail.
まずSiO260〜80wt％、B2O310〜25wt％、
BaO2〜10wt％、Al2O30.5〜10wt％から成るガラ
ス組成粉末に溶媒としてのイソブチルメタクリレ
ート、溶剤としてのα−テルピネオールを混合し
てグレーズ用ペーストを作成する。 First, SiO2 60~80wt%, B2O3 10 ~25wt%,
A paste for glaze is prepared by mixing isobutyl methacrylate as a solvent and α-terpineol as a solvent with a glass composition powder consisting of BaO2 to 10 wt% and Al2O3 0.5 to 10 wt%.
次に前記グレーズ用ペーストをメタライズ金属
部２を含むセラミツク基板１表面全面にスクリー
ン印刷法により印刷塗布する。 Next, the glaze paste is printed and coated on the entire surface of the ceramic substrate 1 including the metallized metal portion 2 by a screen printing method.
最後に前記グレーズ用ペーストを塗布したセラ
ミツク基板を還元雰囲気（窒素、水素雰囲気）
中、約1200℃の温度で焼成し、グレーズ用ペース
ト中の溶媒、溶剤を飛散させるとともにガラス組
成粉末を熔融させ、セラミツク基板１表面に熔着
させる。これによつてセラミツク基板上へのグレ
ーズ層の熔着が完了する。この場合、グレーズ用
ペーストはメタライズ金属部２を含むセラミツク
基板１表面全面に塗布されるものの還元雰囲気中
で熔融された熔融ガラスは酸化物であり、該酸化
物はメタライズ金属部２と濡れ性が極めて悪いこ
とからメタライズ金属部上よりセラミツク基板表
面に移行させることができ、熔融ガラスは実質
上、メタライズ金属部２を除くセラミツク基板表
面のみに流れセラミツク基板表面のみにグレーズ
層を熔着させることができる。そのためグレーズ
用ペーストをメタライズ金属部を除くセラミツク
基板表面に塗布するための特殊なマスクは一切不
要であり、極めて量産性に優れている。またグレ
ーズ層３はセラミツク基板１の表面でメタライズ
金属部２の直近まで熔着されるため、グレーズ層
表面に微細薄膜電気配線４を形成したとしても該
微細薄膜電気配線４がセラミツク基板１の表面粗
さに起因して断線することもない。 Finally, the ceramic substrate coated with the glaze paste is placed in a reducing atmosphere (nitrogen, hydrogen atmosphere).
The glass powder is fired at a temperature of about 1,200° C. to scatter the solvent in the glaze paste, melt the glass composition powder, and weld it to the surface of the ceramic substrate 1. This completes the welding of the glaze layer onto the ceramic substrate. In this case, although the glaze paste is applied to the entire surface of the ceramic substrate 1 including the metallized metal part 2, the molten glass melted in the reducing atmosphere is an oxide, and the oxide has wettability with the metallized metal part 2. Since the glaze is extremely bad, it can be transferred from the top of the metallized metal part to the surface of the ceramic substrate, and the molten glass practically flows only to the surface of the ceramic substrate excluding the metallized metal part 2, and the glaze layer can be welded only to the surface of the ceramic substrate. can. Therefore, there is no need for any special mask to apply the glaze paste to the surface of the ceramic substrate except for the metallized metal parts, making it extremely suitable for mass production. Furthermore, since the glaze layer 3 is welded to the surface of the ceramic substrate 1 up to the immediate vicinity of the metallized metal part 2, even if the fine thin film electrical wiring 4 is formed on the surface of the glaze layer, the fine thin film electrical wiring 4 will not adhere to the surface of the ceramic substrate 1. There is no possibility of wire breakage due to roughness.
尚、前記セラミツク基板１上に塗布するグレー
ズ用ペーストはその印刷塗布厚みを50μｍ以下と
すると還元雰囲気中で焼成した際、熔融ガラスの
メタライズ金属部上からセラミツク基板表面への
移行が極めてスムーズとなり、グレーズ用ペース
トはセラミツク基板上に50μｍ以下の厚みで印刷
塗布することが好ましい。 Furthermore, if the printing thickness of the glaze paste to be applied on the ceramic substrate 1 is 50 μm or less, when it is fired in a reducing atmosphere, the molten glass will transfer extremely smoothly from the metallized metal part to the ceramic substrate surface. The glaze paste is preferably applied by printing onto a ceramic substrate to a thickness of 50 μm or less.
またメタライズ金属部を構成するモリブデン
（Mo）、タングステン（Ｗ）等は酸素との親和力
が強いため酸化物である熔融ガラスの酸素と結合
し、熔融ガラスのメタライズ金属部上からセラミ
ツク基板表面への移行が不安定となることからメ
タライズ金属部表面に酸素との親和力が弱いニツ
ケル、金、白金、パラジウム、ロジウムの少なく
とも一種から成る金属層を被着させておくと熔融
ガラスのメタライズ金属部上からセラミツク基板
表面への移行を確実となすことができる。そのた
めメタライズ金属部表面にはニツケル、金、白
金、パラジウム、ロジウムの少なくとも一種から
成る金属層を被着させておくことが好ましい。 In addition, molybdenum (Mo), tungsten (W), etc. that make up the metallized metal part have a strong affinity with oxygen, so they combine with the oxygen in the molten glass, which is an oxide, and transfer from the metallized metal part of the molten glass to the surface of the ceramic substrate. Since the transition becomes unstable, if a metal layer made of at least one of nickel, gold, platinum, palladium, and rhodium, which has a weak affinity for oxygen, is deposited on the surface of the metallized metal part, the metallized metal part of the molten glass will be Transfer to the ceramic substrate surface can be ensured. Therefore, it is preferable to deposit a metal layer made of at least one of nickel, gold, platinum, palladium, and rhodium on the surface of the metallized metal part.
（発明の効果）
以上の通り、本発明のグレーズドセラミツク基
板の製造方法によればメタライズ金属部を含むセ
ラミツク基板表面全面にグレーズ用ペーストを塗
布するとともに該セラミツク基板を還元雰囲気中
で焼成しメタライズ金属部上にグレーズ用ペース
トを該金属部上よりセラミツク基板表面に移行さ
せるだけで、実質上、メタライズ金属部を除くセ
ラミツク基板表面全面にグレーズ層を熔着させる
ことができ、その結果、グレーズ層上に形成され
る微細薄膜電気配線に断線の発生を皆無としたグ
レーズドセラミツク基板を得ることができる。(Effects of the Invention) As described above, according to the method for manufacturing a glazed ceramic substrate of the present invention, a glaze paste is applied to the entire surface of the ceramic substrate including the metallized metal portion, and the ceramic substrate is fired in a reducing atmosphere to produce the metallized metal. By simply transferring the glaze paste from the metal part onto the surface of the ceramic substrate, the glaze layer can be fused to virtually the entire surface of the ceramic substrate except for the metallized metal part. It is possible to obtain a glazed ceramic substrate in which there is no occurrence of disconnection in the fine thin film electrical wiring formed on the substrate.
またグレーズ用ペーストをメタライズ金属部に
のみ塗布するための特殊なマスクが不要であり、
該マスク使用における量産性の不都合が払拭され
ることから極めて量産性がよく、製品としてのグ
レーズドセラミツク基板を安価となすこともでき
る。 Additionally, there is no need for a special mask to apply the glaze paste only to the metallized metal parts.
Since the inconvenience of mass production when using the mask is eliminated, it is extremely easy to mass produce, and the glazed ceramic substrate as a product can be made at low cost.
尚、本発明は上述の実施例に限定されるもので
はなく本発明の要旨を逸脱しない範囲であれば
種々の変更は可能である。 It should be noted that the present invention is not limited to the above-described embodiments, and various modifications can be made without departing from the gist of the present invention.
図は本発明のグレーズドセラミツク基板の製造
方法により作製されたグレーズドセラミツク基板
の一部拡大断面図である。
１……セラミツク基板、２……メタライズ金属
部、３……グレーズ層、４……微細薄膜電気配
線、５……外部リードピン。
The figure is a partially enlarged sectional view of a glazed ceramic substrate manufactured by the method for manufacturing a glazed ceramic substrate of the present invention. 1... Ceramic substrate, 2... Metallized metal part, 3... Glaze layer, 4... Fine thin film electrical wiring, 5... External lead pin.
Claims (1)
全面にグレーズ用ペーストを塗布するとともに還
元雰囲気中で焼成し、これによりメタライズ金属
部上のグレーズ用ペーストを該金属部上よりセラ
ミツク基板表面に移行させ、実質上、メタライズ
金属部を除くセラミツク基板表面のみにグレーズ
層を熔着させることを特徴とするグレーズドセラ
ミツク基板の製造方法。 ２ メタライズ金属部表面にニツケル、金、白
金、パラジウム、ロジウムの少なくとも一種から
成る金属層を形成しておくことを特徴とする特許
請求の範囲第１項記載のグレーズドセラミツク基
板の製造方法。[Claims] 1. A glaze paste is applied to the entire surface of the ceramic substrate including the metallized metal part and fired in a reducing atmosphere, whereby the glaze paste on the metallized metal part is spread over the surface of the ceramic substrate from above the metallized part. A method for manufacturing a glazed ceramic substrate, characterized in that the glaze layer is welded only to the surface of the ceramic substrate excluding the metallized metal portion. 2. The method for manufacturing a glazed ceramic substrate according to claim 1, characterized in that a metal layer made of at least one of nickel, gold, platinum, palladium, and rhodium is formed on the surface of the metallized metal part.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19533384A JPS6172698A (en) | 1984-09-17 | 1984-09-17 | Manufacture of glazed ceramic substrate |
| US06/775,859 US4632846A (en) | 1984-09-17 | 1985-09-13 | Process for preparation of glazed ceramic substrate and glazing composition used therefor |
| US06/926,854 US4767672A (en) | 1984-09-17 | 1986-11-03 | Process for preparation of glazed ceramic substrate and glazing composition used therefor |
| US07/114,227 US4806334A (en) | 1984-09-17 | 1987-10-26 | Glazed ceramic substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19533384A JPS6172698A (en) | 1984-09-17 | 1984-09-17 | Manufacture of glazed ceramic substrate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6172698A JPS6172698A (en) | 1986-04-14 |
| JPH0459274B2 true JPH0459274B2 (en) | 1992-09-21 |
Family
ID=16339425
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19533384A Granted JPS6172698A (en) | 1984-09-17 | 1984-09-17 | Manufacture of glazed ceramic substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6172698A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4624754B2 (en) * | 2003-09-29 | 2011-02-02 | 日本特殊陶業株式会社 | Ceramic substrate for thin film electronic component, manufacturing method thereof, and thin film electronic component using the same |
| DE102009029485A1 (en) | 2009-09-15 | 2011-03-24 | Robert Bosch Gmbh | Method for producing a ceramic component, ceramic component and component assembly |
-
1984
- 1984-09-17 JP JP19533384A patent/JPS6172698A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6172698A (en) | 1986-04-14 |
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