JPH0458176B2 - - Google Patents
Info
- Publication number
- JPH0458176B2 JPH0458176B2 JP58228645A JP22864583A JPH0458176B2 JP H0458176 B2 JPH0458176 B2 JP H0458176B2 JP 58228645 A JP58228645 A JP 58228645A JP 22864583 A JP22864583 A JP 22864583A JP H0458176 B2 JPH0458176 B2 JP H0458176B2
- Authority
- JP
- Japan
- Prior art keywords
- plasma
- gas
- etching
- sample
- generation chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000007789 gas Substances 0.000 claims description 63
- 238000005530 etching Methods 0.000 claims description 46
- 150000002500 ions Chemical class 0.000 claims description 36
- 238000000034 method Methods 0.000 claims description 22
- 230000007423 decrease Effects 0.000 claims description 10
- 230000005684 electric field Effects 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- 238000001020 plasma etching Methods 0.000 claims description 6
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 2
- 229910052760 oxygen Inorganic materials 0.000 claims description 2
- 239000001301 oxygen Substances 0.000 claims description 2
- 150000001875 compounds Chemical class 0.000 claims 1
- 239000000203 mixture Substances 0.000 claims 1
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
- 239000000523 sample Substances 0.000 description 36
- 239000010408 film Substances 0.000 description 18
- 239000000758 substrate Substances 0.000 description 11
- 238000006243 chemical reaction Methods 0.000 description 10
- 229910004298 SiO 2 Inorganic materials 0.000 description 9
- 230000000694 effects Effects 0.000 description 9
- 238000000605 extraction Methods 0.000 description 9
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 9
- 239000000460 chlorine Substances 0.000 description 7
- 238000009826 distribution Methods 0.000 description 7
- 229910052736 halogen Inorganic materials 0.000 description 6
- 230000009257 reactivity Effects 0.000 description 6
- 150000002367 halogens Chemical class 0.000 description 5
- 229910052731 fluorine Inorganic materials 0.000 description 4
- 239000011737 fluorine Substances 0.000 description 4
- 238000010849 ion bombardment Methods 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 3
- 230000001133 acceleration Effects 0.000 description 3
- 229910052801 chlorine Inorganic materials 0.000 description 3
- 229910001882 dioxygen Inorganic materials 0.000 description 3
- 230000007935 neutral effect Effects 0.000 description 3
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 2
- 229910052794 bromium Inorganic materials 0.000 description 2
- -1 chlorine gas Chemical compound 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 239000000498 cooling water Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
- 229910018125 Al-Si Inorganic materials 0.000 description 1
- 229910018520 Al—Si Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 150000001721 carbon Chemical class 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- PNDPGZBMCMUPRI-UHFFFAOYSA-N iodine Chemical compound II PNDPGZBMCMUPRI-UHFFFAOYSA-N 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 239000011630 iodine Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000007348 radical reaction Methods 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000001073 sample cooling Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22864583A JPS60120525A (ja) | 1983-12-02 | 1983-12-02 | 反応性イオンエツチング方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22864583A JPS60120525A (ja) | 1983-12-02 | 1983-12-02 | 反応性イオンエツチング方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60120525A JPS60120525A (ja) | 1985-06-28 |
| JPH0458176B2 true JPH0458176B2 (es) | 1992-09-16 |
Family
ID=16879581
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22864583A Granted JPS60120525A (ja) | 1983-12-02 | 1983-12-02 | 反応性イオンエツチング方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60120525A (es) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4734158A (en) * | 1987-03-16 | 1988-03-29 | Hughes Aircraft Company | Molecular beam etching system and method |
| JPH0754759B2 (ja) * | 1987-04-27 | 1995-06-07 | 日本電信電話株式会社 | プラズマ処理方法および装置並びにプラズマ処理装置用モード変換器 |
| US5024716A (en) * | 1988-01-20 | 1991-06-18 | Canon Kabushiki Kaisha | Plasma processing apparatus for etching, ashing and film-formation |
| JP2664265B2 (ja) * | 1989-03-20 | 1997-10-15 | 株式会社日立製作所 | 金属／有機高分子合成樹脂複合体及びその製造方法 |
| US5468341A (en) * | 1993-12-28 | 1995-11-21 | Nec Corporation | Plasma-etching method and apparatus therefor |
| JP2700297B2 (ja) * | 1994-01-31 | 1998-01-19 | 株式会社半導体エネルギー研究所 | 処理方法 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5193280A (es) * | 1975-02-14 | 1976-08-16 | ||
| JPS56155535A (en) * | 1980-05-02 | 1981-12-01 | Nippon Telegr & Teleph Corp <Ntt> | Film forming device utilizing plasma |
-
1983
- 1983-12-02 JP JP22864583A patent/JPS60120525A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5193280A (es) * | 1975-02-14 | 1976-08-16 | ||
| JPS56155535A (en) * | 1980-05-02 | 1981-12-01 | Nippon Telegr & Teleph Corp <Ntt> | Film forming device utilizing plasma |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60120525A (ja) | 1985-06-28 |
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