JPH0456392B2 - - Google Patents
Info
- Publication number
- JPH0456392B2 JPH0456392B2 JP57132610A JP13261082A JPH0456392B2 JP H0456392 B2 JPH0456392 B2 JP H0456392B2 JP 57132610 A JP57132610 A JP 57132610A JP 13261082 A JP13261082 A JP 13261082A JP H0456392 B2 JPH0456392 B2 JP H0456392B2
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- detector
- bubble
- insulating layer
- magnetic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000010409 thin film Substances 0.000 claims description 44
- 239000004020 conductor Substances 0.000 claims description 19
- 238000004519 manufacturing process Methods 0.000 claims description 15
- 238000001514 detection method Methods 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 9
- 238000000151 deposition Methods 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 3
- 238000000034 method Methods 0.000 description 14
- 239000010931 gold Substances 0.000 description 12
- 239000010408 film Substances 0.000 description 9
- 229910000889 permalloy Inorganic materials 0.000 description 9
- 238000005530 etching Methods 0.000 description 7
- 229910004298 SiO 2 Inorganic materials 0.000 description 6
- 239000002223 garnet Substances 0.000 description 6
- 238000010884 ion-beam technique Methods 0.000 description 6
- 239000011651 chromium Substances 0.000 description 5
- 229910052737 gold Inorganic materials 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000020169 heat generation Effects 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 238000003672 processing method Methods 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000005381 magnetic domain Effects 0.000 description 1
- 230000005415 magnetization Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57132610A JPS5924488A (ja) | 1982-07-29 | 1982-07-29 | 磁気バブル検出器の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57132610A JPS5924488A (ja) | 1982-07-29 | 1982-07-29 | 磁気バブル検出器の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5924488A JPS5924488A (ja) | 1984-02-08 |
| JPH0456392B2 true JPH0456392B2 (cs) | 1992-09-08 |
Family
ID=15085350
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57132610A Granted JPS5924488A (ja) | 1982-07-29 | 1982-07-29 | 磁気バブル検出器の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5924488A (cs) |
-
1982
- 1982-07-29 JP JP57132610A patent/JPS5924488A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5924488A (ja) | 1984-02-08 |
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