JPH0455749U - - Google Patents
Info
- Publication number
- JPH0455749U JPH0455749U JP9760790U JP9760790U JPH0455749U JP H0455749 U JPH0455749 U JP H0455749U JP 9760790 U JP9760790 U JP 9760790U JP 9760790 U JP9760790 U JP 9760790U JP H0455749 U JPH0455749 U JP H0455749U
- Authority
- JP
- Japan
- Prior art keywords
- ion
- ionization chamber
- ion source
- exit port
- injection gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000956 alloy Substances 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- 229910001285 shape-memory alloy Inorganic materials 0.000 claims description 3
- 238000002347 injection Methods 0.000 claims 3
- 239000007924 injection Substances 0.000 claims 3
- 238000010884 ion-beam technique Methods 0.000 claims 1
Landscapes
- Electron Sources, Ion Sources (AREA)
- Physical Vapour Deposition (AREA)
Description
第１図は本考案の一実施例のイオン源の縦断面
図、第２図は本考案の主要部の斜視図である。
１……イオン源、１６……イオン化室、１７…
…スリツト材、１８……イオン出射口、１９……
クリーナ片、２０……出射口側面、２１……クリ
ーナ凹部、２２……形状記憶合金材、２３……結
合部穴、２６……加速電極。
FIG. 1 is a longitudinal sectional view of an ion source according to an embodiment of the present invention, and FIG. 2 is a perspective view of the main parts of the present invention. 1...Ion source, 16...Ionization chamber, 17...
...Slit material, 18...Ion exit port, 19...
Cleaner piece, 20... Output side surface, 21... Cleaner recess, 22... Shape memory alloy material, 23... Connection hole, 26... Accelerating electrode.
Claims (1)
導入部を有して、このイオン化室が磁石より発生
する磁界の内部に配し、このイオン化室に導入さ
れた注入ガスをこの磁界とイオン化する手段でイ
オン化し、このイオン化された注入ガスをスリツ
ト材のイオン出射口より高電圧を印加し加速して
イオンビームを引き出す電磁系を有しているイオ
ン源において、前記のイオン出射口に摺動可能な
ようにはめ込まれたクリーナ片を設けこれと連結
した形状記憶合金材から構成され、イオン源部の
使用及び未使用または他の温度差制御手段により
この形状記憶合金材を変動させ、これに連結され
たクリーナ片がイオン出射口を摺動できるよう構
成されたことを特徴とするイオン注入装置のイオ
ン源。 A means for ionizing the injection gas introduced into the ionization chamber with the magnetic field, the ionization chamber having an introduction part for introducing the injection gas into the ionization chamber of the ion source, and the ionization chamber being arranged inside a magnetic field generated by a magnet. In an ion source that has an electromagnetic system that applies a high voltage to the ionized injection gas from the ion exit port of the slit material and accelerates it to extract the ion beam, the ion source can slide into the ion exit port of the slit material. The shape memory alloy material is made up of a shape memory alloy material that is fitted with a cleaner piece and connected to the cleaner piece. An ion source for an ion implanter, characterized in that the cleaner piece is configured to slide through an ion exit port.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9760790U JPH0455749U (en) | 1990-09-19 | 1990-09-19 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9760790U JPH0455749U (en) | 1990-09-19 | 1990-09-19 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0455749U true JPH0455749U (en) | 1992-05-13 |
Family
ID=31838120
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9760790U Pending JPH0455749U (en) | 1990-09-19 | 1990-09-19 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0455749U (en) |
-
1990
- 1990-09-19 JP JP9760790U patent/JPH0455749U/ja active Pending
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