JPH0454984B2 - - Google Patents

Info

Publication number
JPH0454984B2
JPH0454984B2 JP57189049A JP18904982A JPH0454984B2 JP H0454984 B2 JPH0454984 B2 JP H0454984B2 JP 57189049 A JP57189049 A JP 57189049A JP 18904982 A JP18904982 A JP 18904982A JP H0454984 B2 JPH0454984 B2 JP H0454984B2
Authority
JP
Japan
Prior art keywords
region
conductivity type
semiconductor
semiconductor region
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57189049A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5979566A (ja
Inventor
Yutaka Okada
Kenji Kaneko
Koichi Yamazaki
Takahiro Okabe
Minoru Nagata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP57189049A priority Critical patent/JPS5979566A/ja
Publication of JPS5979566A publication Critical patent/JPS5979566A/ja
Publication of JPH0454984B2 publication Critical patent/JPH0454984B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/231—Emitter or collector electrodes for bipolar transistors

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
JP57189049A 1982-10-29 1982-10-29 半導体装置の製造方法 Granted JPS5979566A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57189049A JPS5979566A (ja) 1982-10-29 1982-10-29 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57189049A JPS5979566A (ja) 1982-10-29 1982-10-29 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS5979566A JPS5979566A (ja) 1984-05-08
JPH0454984B2 true JPH0454984B2 (cs) 1992-09-01

Family

ID=16234429

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57189049A Granted JPS5979566A (ja) 1982-10-29 1982-10-29 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS5979566A (cs)

Also Published As

Publication number Publication date
JPS5979566A (ja) 1984-05-08

Similar Documents

Publication Publication Date Title
JP2503460B2 (ja) バイポ−ラトランジスタおよびその製造方法
US4933737A (en) Polysilon contacts to IC mesas
JPS6140146B2 (cs)
JPS62277745A (ja) 半導体集積回路
JPH0557741B2 (cs)
JPH025432A (ja) 半導体装置の製造方法
JP3238228B2 (ja) 半導体装置
US4127864A (en) Semiconductor device
JP3443069B2 (ja) 半導体装置の製造方法
JPH0691192B2 (ja) 接合電界効果トランジスタとキャパシタを形成する方法
JPS6298663A (ja) 半導体集積回路装置
JPH07130898A (ja) 半導体装置およびその製造方法
JPH0454984B2 (cs)
JPH0618200B2 (ja) ラテラルトランジスタ半導体装置の製造方法
JPH0136710B2 (cs)
JPH07235602A (ja) Ｉｉｌ回路を有する半導体装置およびその製造方法
JP2697631B2 (ja) 半導体装置の製造方法
JPH0425711B2 (cs)
JPS6152575B2 (cs)
JP2764988B2 (ja) 半導体装置
JPH0512863B2 (cs)
JPH0436578B2 (cs)
JPS5984464A (ja) 半導体集積回路装置の製造方法
JPH0157506B2 (cs)
JPH04287329A (ja) ラテラルバイポーラトランジスタの製造方法