JPH0453203A

JPH0453203A - Heating resistor

Info

Publication number: JPH0453203A
Application number: JP2161896A
Authority: JP
Inventors: Yukio Kasuya; 糟谷　行男; Yoshiro Takahashi; 高橋　良郎; Takashi Kanamori; 孝史金森; Yasuo Iguchi; 泰男井口
Original assignee: Oki Electric Industry Co Ltd
Current assignee: Oki Electric Industry Co Ltd
Priority date: 1990-06-20
Filing date: 1990-06-20
Publication date: 1992-02-20

Abstract

PURPOSE:To make a change in the electric properties of a heating resistor in accordance with the adding quantity of Si and O, especially in the temperature coefficient of resistance by a method wherein two kinds of elements of Si and O are added to Ti, B and N. CONSTITUTION:A glazed alumina substrate is prepared as an insulated substrate 12, and a film of heat-generating resistor 24, containing 10 to 20wt.% Ti, 15 to 30wt.% B, 1 to 2wt.% Si, N of 30 to 40wt.% N and 20 to 26wt.% O, is formed on the whole surface of the substrate surface 12a. A BN target 30 and an SiO2 target 32 are placed on a TiN target 28, and a film is formed by conducting a reactive sputtering operation. The mixture gas containing 10vol.% N2, 2vol.% O2 and 88vol.% Ar is used as sputtering gas in terms of the normal temperature and the normal pressure, the sputtering gas pressure in the vicinity of the substrate is set at 1X10<-2>Torr and the sputtering power is set at 200W. The electric properties of the title heating resistor is controlled by changing the compositional ratio and also by changing the number of placed BN targets 30 in the state wherein a fixed number of placed SiO2 targets 32 placed on a TiN targets 28 are maintained.

Description

[Detailed description of the invention]

（産業上の利用分野）この発明はサーマルヘッドに用いて好適な発熱抵抗体に
関する。（従来の技術）従来より、電流を通し発熱させで用いる発熱抵抗体はヒ
ータヤ感熱ヘットそのほかの用途に供され、それぞれの
用途に応した種々の発熱抵抗体材料か授業されている。以下、サーマルへ・ンドに用いる発熱抵抗体につき説明
する。サーマルヘッドは絵、文字等を表す印字ドツトのモザイ
クを感熱紙上に形成するため、感熱紙を印字１ヘツ１〜
毎に加熱しで発色させるものであり、種々の構造のもの
か提案されている（例えば文献■、電子通信学会論文誌
　’　８４／３　　Ｖｏｌ。Ｊ６７−Ｃ−ＮＯ，３ｐ、２６２−２６９９照）。このようなサーマルヘッドの発熱抵抗体として、窒化タ
ンタル（Ｔａ２Ｎ）の薄膜を用いることか多い。周知の
ように、Ｔａ２ＮＶハイブリ・シトＩＣ等電気回路の抵
抗体に供した場合その抵抗値の安定性に関し電気回路に
適し１と非常に優れ１こ安定性を得ることができるか、
Ｔａ２Ｎをザーマルヘッ１への発熱抵抗体に供した場合
その耐酸化性及び耐熱性に関しサーマルヘッドにおいて
望まれる充分な耐性を得ることができない。そこでこの
耐性不足を補うべくサーマルヘッドに対し構造」二の工
夫か行なわれでいる。この点につき図面ヲ参照し説明す
る。第６図はサーマルヘッドの構成を概略的に示す断面図で
あって、結縛基板上に多数設けた印字素子のひとつに着
目した構成を示す。第６図にも示すように、サーマルヘッドの印字素子１（
Ｉｔ絶縁基板１２に設けた発熱抵抗体１４とこの発熱抵
抗体１４上に、発熱抵抗体１４の発熱部１４ａ本除く部
分に相離間させて設け１と給電体１６．１８とから成り
、図示ゼすもこの印字素子１０を絶縁基板１２上に多数
設けＣサーマルヘッドを構成り−る。そり、で給電体１
６．１８上に１１ｉｉ１酸化膜２０及び耐摩耗膜２２を
順次（こ設ける。耐酸化膜２０及び耐摩耗膜２２は印字素子１ｏの保護膜
Ｃあり、特に耐酸化膜は高温（こ加熱する発熱部１４ａ
の酸化を防止しサーマルヘッドの長寿命化に大きく寄与
するものである。第７図（Ａ）〜（Ｂ）はサーマルヘッドの発熱抵抗体の
平面形状を示す図である。発熱抵抗体１４の耐熱性を向上し寿命を長くするために
は発熱抵抗体１４の膜厚を厚くすればよいか、Ｔ−ａ　
２　Ｎの電気抵抗率は３００　ＬＪΩ・ｃｍ以下と小さ
くとのＩ”　ａ　２Ｎを用いて発熱抵抗体１４を形成［
）１と場合、発熱抵抗体１４の平面形状を第７図（Ａ）
にも示すよう（こりホシ状とＬ／　−Ｃ膜厚を厚くする
と発熱抵抗体１４の抵抗値は下がるので、印字（こ必要
な電力を得るため発熱抵抗体１４に供給すべき電流１面
ヲ大きく（］なりればならない。１ノか（）なから印字
素子１０の駆動用ＩＣのコスト低減のため（こは、発熱
抵抗体１４に供給すべき電流値を小さく一１ｌＪ″る必
要がある。そこ−Ｃ−第７図（Ｂ）に示すようなミアン
ダ形の発熱抵抗体１４か提案されＣいる。ミアンダ形の
ものでは発熱部１４ａを幅狭な蛇行パターンとＬハ　こ
れ（こまって低い供給電流で実用上充分な印字を行なえ
る高い抵抗値を有しかつ膜厚か厚い発熱抵抗体］４を実
現する。（発明が解決しようとする課題）ところか、近年においては、サーマルヘッドによる印字
に列（）高精細化の要求か高まっている。より高精細な印字のため（こはより微細な印字トラ１〜
を発色させる必要かあるか、このｌこめには印字素子１
０を微細化しなければならない。しかしながら上述のミ
アンダ形の印字素子１０ては発熱部１４１〕か幅狭な蛇
行パターンであるのでこの微細化（こは技術士の限界か
ある。より微細な印字素子１０を形成するためには、発熱抵抗
体１４の平面形状をより簡素な形状例えはリボン状とす
るほうか有利であり、従って発熱抵抗体１４をリボン状
とな（〕て膜厚を厚くしても印字のために実用−り充分
高い抵抗値か得られる高抵抗体材料の開発か望まれる。このような高抵抗体材料としで、従来、例えばＴａ−８
ｉ−Ｎ、或はＴａ−８ｊ−○そのほかの抵抗体材料か開
発されている。これら材料はＴａ、Ｓｉ、Ｎ或は０を含
む混合物Ｃある１とめ１，０００〜１００，０００　ｕ
Ω・ｃｍ程度の高い電気抵抗率ρを有するか、その一方
、抵抗値の温度に対する依存性か強く温度か高くなると
電気抵抗率ｐか低くなる傾向かあった。例えば丁ａ−８
ｉ−Ｎ抵抗体材料て膜厚２０００＝３０００人の発熱抵
抗体１４を形成しＩじ場合、シー１〜抵抗１〜２にΩ／
口かつ抵抗温度係数か−１５００〜−−２０００ｐｐｍ
／’　Ｃとなり、印字のため発熱抵抗体１４に印加〔）
た駆動パルスのパルスエンドて約１０〜２０％程度の電
流増加か起こる。このように発熱抵抗体１４の抵抗値が温度に依存する結
果、発熱抵抗体１４の発熱温度に応じＣぞの抵抗値か変
化して印字の際に発熱抵抗体１４に印加する電力の制御
が困難になり、また絶縁基板１０の温度上昇と共に発熱
抵抗体１４の発熱量が増加するという問題そ生（）る。この発明の目的は上述した従来の問題点を解決するｌと
め、比抵抗値か大きくかつ低い抵抗温度係数を有する発
熱抵抗体を提供することにある。（課題を解決する１こめの手段）この目的の達成を図るため、この発明の発熱抵抗体は、
Ｔ１、Ｂ、Ｓｉ、Ｎ及び○から成ることを特徴とする。この発明の実施に当っては、王］を１０〜２０重量％、
Ｂを１５〜３０重量％、Ｓｉを１〜２重量％、Ｎを３０
＝４０重量％及びＯを２０−・・２６重量％含む発熱抵
抗体とするのか好適である。（作用）この発明の発熱抵抗体はＴ１、Ｂ、Ｓｉ、Ｎ及び○から
成るＴｉ　−Ｂ−８ｊ−−−Ｎ　−０抵抗体であり、１
−］−１Ｂ及びＮから成る抵抗体ヘ−スに８１及び０の
２種の元素を添加したものと考えることかできる。これ
ら８１及び○の添加量に応し−Ｃ発熱抵抗体の電気的性
質時１こ抵抗温度係数を変化させることか（−きる。この発明の発熱抵抗体をサーマルヘッドに供う−る場合
、発熱抵抗体は王１ｔｌｏ〜２０重量％、［３を１り・
〜３０重量％、Ｓｉ−を１〜２重量％、Ｎを３０へ一４
０重量％及びＯを２０〜２６重量％含むようにするのか
好ましノい。このような組成割合で一各元素を含む発熱
抵抗体はサーマルヘッドの発熱抵抗体と(Industrial Application Field) The present invention relates to a heating resistor suitable for use in a thermal head. (Prior Art) Conventionally, heating resistors used to generate heat through the passage of electric current have been used in heaters, heat-sensitive heads, and other applications, and various heating resistor materials have been developed to suit each application. The heating resistor used in the thermal head will be explained below. The thermal head forms a mosaic of printed dots representing pictures, characters, etc. on thermal paper, so each print print
Various structures have been proposed (for example, Document ①, Transactions of the Institute of Electronics and Communication Engineers '84/3 Vol. J67-C-NO, 3p, 262-2699). . A thin film of tantalum nitride (Ta2N) is often used as the heating resistor of such a thermal head. As is well known, when Ta2NV is used as a resistor in an electric circuit such as a hybrid IC, its resistance value is very suitable for the electric circuit, with a stability of 1.
When Ta2N is used as a heating resistor for the thermal head 1, sufficient resistance to oxidation and heat as desired in the thermal head cannot be obtained. Therefore, in order to compensate for this lack of resistance, some improvements have been made to the structure of the thermal head. This point will be explained with reference to the drawings. FIG. 6 is a cross-sectional view schematically showing the structure of the thermal head, and shows the structure focusing on one of the many printing elements provided on the binding substrate. As shown in FIG. 6, the printing element 1 of the thermal head (
It consists of a heat generating resistor 14 provided on the It insulating substrate 12, a power supply body 16 and a power supply body 16 and 18 provided on the heat generating resistor 14 at a distance from each other in a portion of the heat generating resistor 14 excluding the heat generating portion 14a. A large number of plum print elements 10 are provided on an insulating substrate 12 to constitute a C thermal head. Power feeder 1 with sled
6. The 11ii1 oxide film 20 and the wear-resistant film 22 are sequentially provided on the 18. The oxidation-resistant film 20 and the wear-resistant film 22 are the protective film C of the printing element 1o. Part 14a
This prevents oxidation and greatly contributes to extending the life of the thermal head. FIGS. 7(A) and 7(B) are diagrams showing the planar shape of the heating resistor of the thermal head. T-a
The heating resistor 14 is formed using I''a 2N, which has a small electrical resistivity of 300 LJΩ·cm or less.
)1, the planar shape of the heating resistor 14 is shown in FIG. 7(A).
As shown in Fig. 1, the resistance value of the heating resistor 14 decreases when the thickness of the L/-C film is increased. In order to reduce the cost of the driving IC of the printing element 10 (this means that the current value to be supplied to the heating resistor 14 needs to be small - 1 lJ"). Therefore, a meander-shaped heating resistor 14 as shown in FIG. A heating resistor with a high resistance value and a thick film thickness that can perform practically sufficient printing with the supplied current] 4. (Problem to be solved by the invention) However, in recent years, thermal heads have been used to The demand for high-definition printing is increasing.For higher-definition printing (this is finer printing
Is it necessary to color the print element 1?
0 must be made smaller. However, since the above-mentioned meander-shaped printing element 10 has a narrow meandering pattern in the heat generating part 141, this miniaturization (this may be at the limit of an engineer).In order to form a finer printing element 10, It is advantageous to make the heating resistor 14 into a simpler planar shape, for example a ribbon shape. Therefore, even if the heating resistor 14 is made into a ribbon shape and the film thickness is increased, it is not practical for printing. Therefore, it is desired to develop a high-resistance material that can obtain a sufficiently high resistance value. Conventionally, for example, Ta-8
Other resistor materials such as i-N or Ta-8j-○ have been developed. These materials are Ta, Si, N, or a mixture C containing 0.1,000 to 100,000 u
It has a high electrical resistivity ρ on the order of Ω·cm, and on the other hand, the resistance value has a strong dependence on temperature, and as the temperature rises, the electrical resistivity p tends to decrease. For example, cho a-8
If the heating resistor 14 is formed using i-N resistor material with a film thickness of 2000 = 3000, Ω/
Temperature coefficient of resistance -1500~-2000ppm
/' becomes C and is applied to the heating resistor 14 for printing [)
At the end of the driving pulse, the current increases by about 10 to 20%. As a result of the resistance value of the heat generating resistor 14 being dependent on the temperature in this way, the resistance value of C changes depending on the heat generation temperature of the heat generating resistor 14, making it difficult to control the power applied to the heat generating resistor 14 during printing. Moreover, as the temperature of the insulating substrate 10 rises, the amount of heat generated by the heating resistor 14 increases. An object of the present invention is to solve the above-mentioned conventional problems and to provide a heating resistor having a large specific resistance value and a low temperature coefficient of resistance. (First Means to Solve the Problem) In order to achieve this objective, the heating resistor of the present invention has the following features:
It is characterized by consisting of T1, B, Si, N, and O. In carrying out this invention, 10 to 20% by weight of King]
B: 15-30% by weight, Si: 1-2% by weight, N: 30% by weight
It is preferable to use a heating resistor containing 40% by weight and 20-26% by weight of O. (Function) The heating resistor of the present invention is a Ti-B-8j---N-0 resistor consisting of T1, B, Si, N, and ○.
-]-1 It can be considered that the two elements 81 and 0 are added to the resistor base consisting of B and N. Depending on the amount of these 81 and ○ added, the electrical properties of the -C heating resistor may be changed by changing the temperature coefficient of resistance (-). When the heating resistor of the present invention is used in a thermal head, The heating resistor is 1 to 20% by weight, [3 to 1]
~30% by weight, 1-2% by weight of Si-, 30 to 4% of N
It is preferable to contain 0% by weight and 20 to 26% by weight of O. A heating resistor containing each element in such a composition ratio can be used as a heating resistor for a thermal head.

【ノて実用に適
ｊノだ低い抵抗温度係数及び実用に適Ｌ／た高い比抵抗
（ａを有する。（実施例）以Ｆ、図面を参照しノこの発明の実施例につき説明づ−
る。尚、図面（まこの発明か理解できる程度に概略的（
こ示（］であるにずぎない。乙の実施例はサーマルヘッドの発熱抵抗体に供し１と例
であ；つ、以下の説明では、サーマルへ・ントの製造工
程の説明ととも（ここの実施例（こつき説明する。第３図（Ａ）・〜（Ｃ）はり−マルヘットの製造工程を
段階的に示す断面図であり、この実施例の発熱抵抗体を
第６図に示す構成のサーマルへ・ン］〜（こ供し１と場
合の製造工程の一例を示す。まず絶縁基板１２としてグレーズドアルミナ基板を用意
し、高周波スパッタ（ＲＦスバ・ν）９）法（こより、
第３図（Ａ）（こｂ示すように、この基板１２の基板面
１２ａの全面にＴ　ｊ、　−Ｂ　−Ｓ　ｊＮ−Ｏ発熱抵
抗体２４を成膜する。この−「」−Ｂ−８ｉ　−Ｎ−○
発熱抵抗体２４はＴｉ（チタン）、Ｂ（はう素）、Ｓｊ
（シリコン）、Ｎ（窒素）及び○（Ｍ素）から成り、Ｔ
　ｉ　％　１０〜２０重ｉｉ％、８７８１５〜３０重量
％、５ｉｔｌ−２重量％、Ｎを３０〜４０重量％及び○
を２〇−２６重量％含む。第４図は発熱抵抗体２４の成膜に用いたタケッ１〜の構
成を示り一図−Ｃあり、第４図（Ａ）はターゲーットの
平面図及び第４図ＣＢ）は第４図（△）のＩＶ　Ｂ　　
ＩＶ　Ｂ線（こ沿って取った断面図である。ターゲットの構成及び形成材料は任意好適な構成及び形
成材料とすることかできるか、この実施例で用いるダー
ゲッ１−は、第４図にも示すよう（こ、円盤形状の丁ｊ
Ｎターゲット２８、扇形状のＢＮターゲ・ｙト３０及び
チップ状の８１０２ターゲツト３２から成る。５１０２
ターゲ・ン１〜３２の平面形状を一辺１５ｍｍの矩形と
し、またＢＮＮターケラト３の開き角ｅ８ｅ＝２０’と
した。尚、第４図（Ａ）中、ＢＮターゲット３ｏに点をイー１
しで示Ｊ゛。Ｔ　ｉ　−Ｂ−８１，−Ｎ−〇発熱抵抗体２４の成膜時
には、ＴｉＮターゲット２８上にＢＮターゲット３０と
Ｓｉｎ、ターゲット３２とを載置して用い、反応性スパ
ッタを行なって発熱抵抗体２４を成膜する。発熱抵抗体
２４の成膜では、スパッタガスとして常温及び常圧に換
算してＮ２％１０体積％、０２を２体積％及び△ｒを８
８体積％含むＮ２．０２及びＡｒの混合ガスを用い、基
板近傍におけるスパッタガス圧を１ｘｌＯ−２Ｔｏｒｒ
及びスパッタ電力を２００Ｗとした。Ｔ　ｉ　Ｎターゲット２８上に載置するＳｉ−Ｃつ２タ
ーケツト３２の載置個数を一定個数例えは５個（こ保持
したままＢＮＮターケラ１〜３の載置個数を変化させる
ことによって、発熱抵抗体２４か含む元素の組成割合を
変化させ制御する。第２図に、上述のターゲットを用いて成膜した膜２４の
組成を示す。第２図は、ＴｉＮタ−ゲッ］−２８上に載
置したＳｉＯ□ターゲット３２の総個数を５個として一
定に保持し１とままＢＮクゲット３０の総個数ｍを変化
させＣ成膜しを場合（乙成膜された膜２４か含む各元素
Ｔｉ、Ｂ、Ｓｉ、Ｎ、○の組成割合を示した図であり、
縦軸に成膜され１と膜２４か含む各元素の組成＾り合（
重量％）を及び横軸にＢＮターゲットの開き角θの総和
−ｍ・θ（ｄｅ９）を取って示したものである。図中、
Ｔ１、Ｎ、８、○及びＳｉの組成の変化をそれぞれ符号
口、ム、Ｏ３・及び×でプロワ１〜して表し１と。第２図からも理解できるように、ＢＮターゲット３０の
開き角θの総和−ｍ・０を減少させると８の組成割合（
ｊ減少しＴｉの組成割合は増加する。これと共に開き角
０の総和が減少するに従って、スパッタ率の高い○の組
成割合はＳ］０２ターゲットの載置個数を一定に保持し
ているにもかかわらす増加し、Ｓｉの組成割合は１〜２
重量％の範囲てほぼ一定となり、Ｎの組成割合は減少す
る。第１図に、第４図に示すターゲットを用いて成膜し１と
膜２４の電気的特性と、第４図に示すタゲットにおいで
Ｓｉ○２ターゲット３２を省略し用いないで成膜した膜
の電気的特性とを示す。第１図は開き角θの総和＝ｍθ
としで成膜した膜の比抵抗と抵抗温度係数ＴＣＲとを示
ず図てあり、横軸に開き角θの総和を、左側の縦軸に比
抵抗（ｍΩ・ｃｍ）及び右側の縦軸に抵抗温度係数下Ｃ
日（ｐｐｍ／’　Ｃ）を取って示しｊとものである。図
中、符号０及び△てプロットした実線は第４図に示すタ
ーゲットにおいてＴｉＮターゲット２８上に８１０２タ
ーゲツト３２を載置しないで成膜したＴｉ−Ｂ−Ｎ膜の
比抵抗及び抵抗温度係数の変化を、また符号・及びムで
プロットした実線は第４図（こ示すターゲットにａ３い
てＴｉＮタケ・ント２８」二（こ５１０２タ−ゲ・ント
３２を載置して成膜したＴｉ−Ｂ−Ｎ−３ｉ−○膜２４
の比抵抗及び抵抗温度係数の変化を表す。第１図及び第２図からも理解できるように、Ｂの組成割
合の減少に伴なって、Ｔｊ−Ｂ−ＮＳ　」−−○膜２４
の比抵抗は減少すると共に温度抵抗係数ＴＣＰの値は零
に近づいてゆく。またＴＩＢ−Ｎ−８ｊ−○膜２４の場
合と同様、ＴｉＢ−Ｎ膜でのＢの組成割合は開き角０の
総和の減少に伴ない減少し、従ってＢの組成割合の減少
に伴なって、Ｔｉ−Ｂ−Ｎ膜の比抵抗は減少すると共に
温度抵抗係数ＴＣＲの値は零に近づいてゆく。このよう
にＴ　ｉ　−Ｂ−Ｎ　−Ｓ　ｉ−〇膜２４の比抵抗及び
抵抗温度係数の変化の様子は、大まかにばＴｊ−Ｂ−Ｎ
膜と同様の傾向を示す。これらＴｊ−Ｂ−Ｎ−８】−Ｏ膜２４及びＴｊＢ　−Ｎ
膜の比抵抗を比較すれば、Ｂ７：１５〜３０重量％の割
合で含むＴｉ−Ｂ−Ｎ−３ｉ−〇膜２４の比抵抗は、Ｂ
の組成割合か２０〜２５重量％の範囲てはＴｉ−Ｂ−Ｎ
膜の比抵抗よりも大きくなり、またＢの組成範囲か２０
重量％以下の範囲及び２５重量％以上の範囲てはＴｉ−
Ｂ−Ｎ膜の比抵抗よりも小さくなる。しかしこれら膜の
比抵抗の差は比較的小さい。ま７．：：　Ｔ　ｉ　−Ｂ
−ＮＳｊ−○膜２４及びＴｊ−Ｂ−Ｎ膜の抵抗温度係数
ＴＣＰを比較すれば、Ｔ　ｊ、　−Ｂ　−Ｎ−３ｉ−〇
膜２４の抵抗温度係数は、Ｔ　ｉ−Ｂ　−Ｎ膜のそれよ
りも大幅に零に近い値となり、従って使用環境温度が変
動してもＴｉ−Ｂ−Ｎ−８ｊ−○膜２４を流れる電流の
変動量をＴｉ−Ｂ−Ｎ膜よりも大幅に小さくすることが
できる。この出願の発明者は実験により、次の■〜■を確認し１
と。０）Ｔｉ−Ｂ−Ｎ−８ｉ−〇膜２４の比抵抗をサー
マルヘッドの発熱抵抗体に適した値とする１とめには、
Ｓｉの組成割合を１〜２重量％及び○の組成割合を２０
〜２６重量％の範囲とするのかよく、この範囲を越えで
Ｓｉ、○を添加しｌと場合にはＴｊ、Ｂの組成割合を調
整ジノてもＴｊＢ−Ｎ−８１−○膜２４の比抵抗はサー
マルヘッドの発熱抵抗体に適した値とはならずこれより
も大幅に小さな値となる。■サーマルへ・ンドの発熱抵
抗体に適した発熱抵抗体を得るためには、Ｔ」を１５重
量％、Ｂを２５重量％、Ｎを３５重量％、○を２４重量
％及びＳｉを１重量％含む発熱抵抗体２４を成膜するの
か、最も好ましい。ここでは第３図（Ａ）に示す工程段階（こ占いて、−例
としで、８Ｎターゲツト３０の開き角θの総和を８０°
としてＴｉ−Ｂ−３ｉ−Ｎ−○発熱抵抗体２４を成膜し
たものとする。この成膜した発熱抵抗体２４の表面抵抗
は約３５００Ω／口であった。このような表面抵抗の発
熱抵抗体２４を用いればその形状をミアング型の形状（
第７図（Ｂ）？照）に加工せず（こより簡素な形状例え
ばリボン型の形状（第７図（Ａ）参照）に加工しても、
サーマルヘッドにおいで実用上壁まれる高い抵抗値の発
熱抵抗体１４を形成することかできる。発熱抵抗体２／４を成膜したのち、次に第３図（Ｂ）に
も示すように、発熱抵抗体２４上に給電体２６を形成す
る。次いて、第３図（Ｃ）にも示すように、発熱抵抗体２４
及び給電体２６を平面形状かリボン状となるようにバタ
ー−−ングしくリボン型の発熱抵抗体１４を形成し、そ
ののち発熱抵抗体１４０発熱部１４ａを露出するように
給電体２６姦バタングしＣ発熱部１４ａをはざみ相離間
する給電体１６及び１８を発熱抵抗体１４上に形成する
。次に、第６図にも示すように、給電体１６．１８及び発
熱部１４ａ上に、ＳｉＣ２から成る耐酸化膜２０を形成
（）、ざらに耐酸化膜２０上に膜１り２＋ＩｍのＴａ２
０５から成る耐摩耗膜２２を形成し、所定個数の印字素
子１０７ａ−所定位置に配胃して成るザ　ンルヘッドを
完成する。ミアンダ型の発熱抵抗体１７１１を形成するのではなく
、リボン型の発熱抵抗体１４を形成することによって、
フォトリソエツチングにより発熱抵抗体２４をバターニ
ングした際の歩留りを向上−づることかできると共に印
字素子１０の微細化か容易になる。第５図はサーマルヘラ１〜における電流変化の説明に供
する図である。第５図（Ｂ）は所定の印字濃度で印字す
るに必要な印加電力でザーマルへ・ントを駆動する１と
め発熱抵抗体１４に印加し１とパルス幅２ｍｓの定電圧
駆動パルスの波形を示す図であり、縦軸に印加電圧及び
横軸に時間（ｍｓ）を取って示した。ま１．：第５図（
Ａ）は第５図ＣＢ）に示す波形の定電圧駆動パルスを印
加した際の発熱抵抗体１４を流れる電流の変化を示すも
のであり、縦軸に発熱抵抗体１４を流れる電流及び横軸
に時間（ｍｓ）を取って示した。第５図（Ａ）中、サー
マルヘッドの発熱抵抗体１４を上述し１と実施例で形成
した表面抵抗３５００Ω／口のリボン型のＴｉ−Ｂ　　
Ｎ　　Ｓｉ−○膜及び抵抗温度係数−２２００ｐｐｍ／
’　Ｃのリボン型のＴａ５ｉ−一〇膜とした場合（こ、
発熱抵抗体１４を流れる電流の変化をそれぞれ実線及び
点線で示し１と。Ｔ　１−Ｂ−Ｎ−８ｉ−０及びＴａ−３ｉ−○膜いずれ
の場合も発熱抵抗体１４の抵抗温度係数か負であるため
、定電圧駆動パルスの印加により発熱抵抗体１４の温度
か上昇すると、第５図からも理解できるように、発熱抵
抗体１４の抵抗は減少し電流か増加する。（〕かしなか
ら電流変化率へ１ｌｏｏ／ｉ（％）はＴ　ａ　−３ｉ　
−０膜の場合にはほぼ２０〜３０％であるのに対し上述
した実施例の１１−△ρ−Ｎ−８１−〇膜の場合にはほ
ぼ８％となり、電流変化率を非常に低く抑えることかで
きる。プリンタやファクシミリで（よ印字時の電流変化
率を１０％以内とすることか望まれており、従って電流
変化率８％は実用上充分に満足できる値である。この発明は上述した実施例にのみ限定されるものではな
く、従って各構成成分の形状、個数、寸法、膜厚、形成
条件、成膜方法及びそのほかを任意好適に変更］−るこ
とかできる。例えば成膜に用いるターゲット及びスパッタガスとして
一ト述の実施例で述へ１ともののほか、以下に挙げる（
１）〜（２）のものを用いてもよい。（１）・ターゲット：Ｔ１、Ｂ及び５１０２の３種の物
質から成る混合ターゲット・スパッタガス：常温及び常圧に換算してＡｒを５０体
積％及びＮ２を５０体積％含む八ｒ及びＮ２の混合ガス（２）・ターゲラｈ：ＴｊＢＮ及びＳｉＣ２の２種の物
質から成る混合ターゲット・スパックガス：常温及び常圧に換算１ノでＡｒを９０
体積％及びＮ２を１０体積％含むＡｒ及びＮ２の混合ガ
ス（発明の効果）上述し１．：説明からも明らかなように、この発明の発
熱抵抗体によれば、王ｊ、Ｂ及びＮのみから成る抵抗体
ベースにＳｉ及び○の２種の元素を添加しノたものと考
えることかでき、これらＳ］及びＯの添加量に応じて発
熱抵抗体の電気的性質特に抵抗温度係数を変化させるこ
とができる。この発明の発熱抵抗体をサーマルへ・ントに供する場合
、発熱抵抗体はＴｉｔ１０〜２０重里％、Ｂを１５〜３
０重里％、Ｎを３０〜４０重量％、Ｓｊを１〜２重量％
、及び○を２０〜２６重量％含むようにするのが好まし
い。このような組成範囲で各元素を含む発熱抵抗体を形
成することによって、ミアンダ型よりも簡素な形状例え
ばリボン状の形状となしてもサーマルヘッドの発熱抵抗
体として実用に適した高い抵抗値を有する発熱抵抗体を
形成でき、従ってサーマルへ・ントの発熱抵抗体の駆動
用トライバＩＣの低電流化が容易となり、低電流で動作
するドライバＩＣ％用いることによって生産コストの低
減を図れるという利点を生じる。さらにサーマルヘッド
においてリボシ型の発熱抵抗体を形成することにＪ：っ
て、発熱抵抗体の微細化か容易となるという利点を主し
る。（）かも上述のような組成範囲で各元素を含む発熱抵抗
体を形成すること（こよって、より零に近い値の低い抵
抗温度係数を有し従って通電による抵抗値の減少が少な
い発熱抵抗体を形成することかてき、従ってサーマルヘ
ッド駆動時（こ印加電力の制御が容易になる。[It has a temperature coefficient of resistance so low as to be suitable for practical use, and a specific resistance (a) as high as L/l, suitable for practical use.
Ru. Please note that the drawings (schematic to the extent that you can understand the invention)
There is no doubt that this is the case ().The embodiment B is an example of a heat generating resistor for a thermal head; Example (I will explain the details.) FIGS. 3(A) to 3(C) are cross-sectional views showing step by step the manufacturing process of the beam-marhet, and the heating resistor of this example has the structure shown in FIG. 6. An example of the manufacturing process for case 1 is shown below. First, a glazed alumina substrate is prepared as the insulating substrate 12, and subjected to high frequency sputtering (RF sputtering)9) method.
As shown in FIG. 3(A), a Tj, -B-SjN-O heating resistor 24 is formed on the entire substrate surface 12a of this substrate 12. -N-○
The heating resistor 24 is made of Ti (titanium), B (boron), Sj
(silicon), N (nitrogen) and ○ (M element), T
i% 10-20% by weight, 87815-30% by weight, 5itl-2% by weight, 30-40% by weight of N, and ○
Contains 20-26% by weight. FIG. 4 shows the structure of the brackets 1 to 1 used for forming the heating resistor 24, and FIG. 4(A) is a plan view of the target, and FIG. △) IV B
This is a cross-sectional view taken along line IV B. The structure and forming material of the target may be any suitable structure and forming material. As shown (this, disk-shaped plate)
It consists of an N target 28, a fan-shaped BN target 30, and a chip-shaped 8102 target 32. 5102
The planar shape of the targets 1 to 32 was a rectangle with a side of 15 mm, and the opening angle of the BNN target 3 was set to e8e = 20'. In addition, in Fig. 4 (A), point E1 to BN target 3o.
Show it J゛. T i -B-81, -N-〇When forming the heating resistor 24, a BN target 30, a Sin target 32, and a BN target 30 are placed on the TiN target 28, and reactive sputtering is performed to form the heating resistor. 24 is formed into a film. In the film formation of the heating resistor 24, the sputtering gases were 10% by volume of N2, 2% by volume of 02, and 8% by volume of Δr, calculated at room temperature and pressure.
Using a mixed gas of N2.02 and Ar containing 8% by volume, the sputtering gas pressure near the substrate was set to 1xlO-2Torr.
And the sputtering power was 200W. By changing the number of BNN targets 1 to 3 while keeping the number of Si-C targets 32 placed on the TiN target 28 at a fixed number, for example 5, the heating resistor can be changed. Fig. 2 shows the composition of the film 24 formed using the above-mentioned target. In the case where the total number of SiO□ targets 32 placed is kept constant as 5 and the total number m of BN target 30 is changed while remaining 1 to form a C film (B) each element including Ti, It is a diagram showing the composition ratio of B, Si, N, and ○,
The vertical axis shows the composition of each element formed in the film 1 and film 24 (
% by weight) and the total sum of the opening angles θ of the BN target -m·θ(de9) is plotted on the horizontal axis. In the figure,
The changes in the composition of T1, N, 8, ○, and Si are expressed as 1 and 1 by code entry, O3, and ×, respectively. As can be understood from FIG. 2, when the sum of the opening angles θ of the BN target 30 -m・0 is decreased, the composition ratio of 8 (
j decreases and the composition ratio of Ti increases. At the same time, as the sum of the opening angles 0 decreases, the composition ratio of ○ with a high sputtering rate increases even though the number of S]02 targets mounted is kept constant, and the composition ratio of Si increases from 1 to 1. 2
It becomes almost constant within the range of weight %, and the composition ratio of N decreases. FIG. 1 shows the electrical characteristics of films 1 and 24 formed using the target shown in FIG. 4, and a film formed without using the Si○2 target 32 in the target shown in FIG. The electrical characteristics of Figure 1 shows the sum of opening angles θ = mθ
The resistivity and temperature coefficient of resistance (TCR) of the film deposited on the film are not shown, and the horizontal axis represents the sum of the opening angles θ, the vertical axis on the left represents the resistivity (mΩ cm), and the vertical axis on the right represents the specific resistance (mΩ・cm). Resistance temperature coefficient lower C
It is expressed by taking the day (ppm/'C) and showing it as j. In the figure, solid lines plotted with symbols 0 and △ indicate changes in specific resistance and temperature coefficient of resistance of the Ti-B-N film formed without placing the 8102 target 32 on the TiN target 28 in the target shown in FIG. The solid lines plotted with the symbols and symbols are shown in Figure 4 (Figure 4). N-3i-○ membrane 24
represents the change in resistivity and temperature coefficient of resistance. As can be understood from FIGS. 1 and 2, as the composition ratio of B decreases, the Tj-B-NS"--○ film 24
As the specific resistance decreases, the value of the temperature resistance coefficient TCP approaches zero. Also, as in the case of TIB-N-8j-○ film 24, the composition ratio of B in the TiB-N film decreases as the sum of the opening angles 0 decreases, and therefore, as the composition ratio of B decreases. As the specific resistance of the Ti-B-N film decreases, the value of the temperature resistance coefficient TCR approaches zero. In this way, the changes in the resistivity and temperature coefficient of resistance of the T i -B-N -S i-〇 film 24 can be roughly expressed as Tj-B-N
It shows the same tendency as the film. These Tj-B-N-8]-O film 24 and TjB-N
Comparing the specific resistances of the films, the specific resistance of the Ti-B-N-3i-〇 film 24 containing B7 at a ratio of 15 to 30% by weight is
The composition ratio of Ti-B-N is in the range of 20 to 25% by weight.
It is larger than the specific resistance of the film, and the composition range of B is 20
Ti-
The resistivity is smaller than that of the BN film. However, the difference in resistivity between these films is relatively small. 7. :: T i -B
Comparing the temperature coefficient of resistance TCP of the -NSj-○ film 24 and the Tj-B-N film, the resistance temperature coefficient of the Tj, -B -N-3i-○ film 24 is the same as that of the Ti-B-N film. The value is much closer to zero than that, and therefore, even if the operating environment temperature changes, the amount of fluctuation in the current flowing through the Ti-B-N-8j-○ film 24 is significantly smaller than that of the Ti-B-N film. be able to. The inventor of this application confirmed the following ■～■ through experiments and 1
and. 0) The first step is to set the specific resistance of the Ti-B-N-8i-〇 film 24 to a value suitable for the heating resistor of the thermal head.
The composition ratio of Si is 1 to 2% by weight, and the composition ratio of ○ is 20%.
The specific resistance of the TjB-N-81-○ film 24 can be adjusted by adjusting the composition ratio of Tj and B. is not a value suitable for the heating resistor of the thermal head, and is much smaller than this value. ■In order to obtain a heating resistor suitable for thermal heating, 15% by weight of T, 25% by weight of B, 35% by weight of N, 24% by weight of ○, and 1% by weight of Si are required. It is most preferable to form a film of the heating resistor 24 containing %. Here, we will explain the process steps shown in FIG.
Assume that a Ti-B-3i-N-○ heating resistor 24 is formed as a film. The surface resistance of the heat generating resistor 24 thus formed was about 3500 Ω/hole. If a heating resistor 24 with such a surface resistance is used, its shape can be changed to a miang-type shape (
Figure 7 (B)? Even if it is processed into a simpler shape, such as a ribbon shape (see Figure 7 (A)),
In a thermal head, it is possible to form a heating resistor 14 with a high resistance value that is practically used as a wall. After forming the heating resistor 2/4, the power supply body 26 is then formed on the heating resistor 24, as shown in FIG. 3(B). Next, as shown in FIG. 3(C), the heating resistor 24
Then, the ribbon-shaped heating resistor 14 is formed by buttering the power supply body 26 so that it has a planar shape or a ribbon shape, and then the power supply body 26 is buttered so as to expose the heating portion 14a of the heating resistor 140. Power feeders 16 and 18 are formed on the heat generating resistor 14, sandwiching the heat generating portion 14a and spaced apart from each other. Next, as shown in FIG. 6, an oxidation-resistant film 20 made of SiC2 is formed on the power supply body 16, 18 and the heat generating part 14a (), and a Ta2 film of 2+Im is roughly formed on the oxidation-resistant film 20.
A wear-resistant film 22 made of 0.05 is formed, and a printhead consisting of a predetermined number of printing elements 107a arranged at predetermined positions is completed. By forming the ribbon-shaped heating resistor 14 instead of forming the meander-shaped heating resistor 1711,
It is possible to improve the yield when patterning the heating resistor 24 by photolithography, and it is also easier to miniaturize the printing element 10. FIG. 5 is a diagram for explaining changes in current in the thermal spatulas 1 to 1. FIG. 5(B) shows the waveform of a constant voltage driving pulse with a pulse width of 2 ms applied to the first heating resistor 14 for driving the thermal head with the applied power necessary to print at a predetermined printing density. FIG. 3 shows the applied voltage on the vertical axis and the time (ms) on the horizontal axis. 1. :Figure 5 (
A) shows the change in the current flowing through the heating resistor 14 when a constant voltage drive pulse with the waveform shown in Figure 5 CB) is applied, where the vertical axis represents the current flowing through the heating resistor 14, and the horizontal axis represents the current flowing through the heating resistor 14. The time (ms) is shown. In FIG. 5(A), the heat generating resistor 14 of the thermal head is a ribbon-shaped Ti-B with a surface resistance of 3500 Ω/hole formed in the above-mentioned 1 and Example.
N Si-○ film and resistance temperature coefficient -2200ppm/
'C ribbon-shaped Ta5i-10 film (this,
Changes in the current flowing through the heating resistor 14 are shown by solid lines and dotted lines, respectively. In both the T1-B-N-8i-0 and Ta-3i-○ films, the temperature coefficient of resistance of the heating resistor 14 is negative, so the temperature of the heating resistor 14 increases by applying a constant voltage drive pulse. Then, as can be understood from FIG. 5, the resistance of the heating resistor 14 decreases and the current increases. (] 1loo/i (%) from current change rate is T a -3i
In the case of -0 film, it is approximately 20 to 30%, while in the case of 11-△ρ-N-81-〇 film of the above-mentioned example, it is approximately 8%, suppressing the current change rate very low. I can do it. In printers and facsimile machines, it is desired that the current change rate during printing be within 10%, and therefore, a current change rate of 8% is a value that is sufficiently satisfactory for practical use. Therefore, the shape, number, dimensions, film thickness, formation conditions, film formation method, and others of each component can be changed as desired.For example, the target used for film formation and the sputtering In addition to those mentioned in the above-mentioned examples, gases are listed below (
1) to (2) may also be used. (1) Target: Mixed target consisting of three substances, T1, B and 5102 Sputtering gas: Mixture of 8R and N2 containing 50 volume% Ar and 50 volume% N2 when converted to room temperature and pressure Gas (2) - Targera h: Mixed target consisting of two substances, TjBN and SiC2 - Spack gas: 90% Ar at 1 NO converted to room temperature and normal pressure
Mixed gas of Ar and N2 containing 10% by volume and 10% by volume of N2 (effects of the invention) 1. :As is clear from the description, according to the heating resistor of the present invention, it can be considered that two types of elements, Si and ○, are added to the resistor base consisting only of B, B, and N. The electrical properties, particularly the temperature coefficient of resistance, of the heating resistor can be changed depending on the amounts of S] and O added. When the heating resistor of this invention is subjected to thermal heating, the heating resistor has a Ti of 10 to 20% and a B of 15 to 3%.
0 weight%, N 30-40% by weight, Sj 1-2% by weight
, and 20 to 26% by weight. By forming a heating resistor containing each element in such a composition range, it is possible to achieve a high resistance value suitable for practical use as a heating resistor for a thermal head even if the shape is simpler than the meandering type, such as a ribbon shape. Therefore, it is easy to reduce the current of the driver IC for driving the heating resistor of the thermal head, and the advantage is that production costs can be reduced by using a driver IC that operates at a low current. arise. Furthermore, the main advantage of forming a ribbed heating resistor in a thermal head is that it is easy to miniaturize the heating resistor. (2) Forming a heat generating resistor containing each element in the composition range as described above (Thus, a heat generating resistor having a low temperature coefficient of resistance closer to zero and whose resistance value decreases less when energized) This makes it easier to control the applied power when driving the thermal head.

[Brief explanation of drawings]

第１図は成膜された膜の電気的特性を示す図、第２図は
成膜された膜の組成を示す図、第３図（Ａ）〜（Ｃ）は
サーマルヘッドの製造工程を概略的に示す図、第４図（Ａ）〜（Ｂ）はターゲットの構成の一例を示す
図、第５図（Ａ）〜（Ｂ）はサーマルヘッドにおける電流変
化の説明に供する図、第６図はサーマルヘッドの印字素子の構成例を示す図、第７図（Ａ）〜（Ｂ）はサーマルヘッドの発熱抵抗体の
平面形状を示す図である。１４．２４・・・発熱抵抗体。特許出願人　　　沖電気工業株式会社開き角θの総和（ｃｊｅ９．）成膜された膜の電気的特性第１図成膜された膜の組成第２図とサーマルヘッド−の印字素子の構成例＝２２４ａFigure 1 shows the electrical characteristics of the deposited film, Figure 2 shows the composition of the deposited film, and Figures 3 (A) to (C) outline the manufacturing process of the thermal head. 4(A) to 4(B) are diagrams showing an example of the structure of the target. 5(A) to 5(B) are diagrams for explaining current changes in the thermal head. 6. 7A and 7B are diagrams showing a configuration example of a printing element of a thermal head, and FIGS. 7A and 7B are diagrams showing a planar shape of a heating resistor of a thermal head. 14.24... Heat generating resistor. Patent applicant: Oki Electric Industry Co., Ltd. Total of opening angles θ (cje9.) Electrical characteristics of the deposited film Figure 1 Composition of the deposited film Figure 2 and configuration example of the printing element of the thermal head = 22 4a

Claims

[Claims]

(1) A heating resistor comprising Ti, B, Si, N and O.

(2) 10-20% by weight of Ti, 15-30% by weight of B
, 1 to 2% by weight of Si, 30 to 40% by weight of N, and 20 to 26% by weight of O.