JPH045271B2 - - Google Patents

Info

Publication number
JPH045271B2
JPH045271B2 JP58004163A JP416383A JPH045271B2 JP H045271 B2 JPH045271 B2 JP H045271B2 JP 58004163 A JP58004163 A JP 58004163A JP 416383 A JP416383 A JP 416383A JP H045271 B2 JPH045271 B2 JP H045271B2
Authority
JP
Japan
Prior art keywords
memory cell
mos transistors
mos transistor
silicon layer
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58004163A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59130459A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP58004163A priority Critical patent/JPS59130459A/ja
Publication of JPS59130459A publication Critical patent/JPS59130459A/ja
Publication of JPH045271B2 publication Critical patent/JPH045271B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices

Landscapes

  • Semiconductor Memories (AREA)
  • Static Random-Access Memory (AREA)
JP58004163A 1983-01-17 1983-01-17 半導体メモリ集積回路装置 Granted JPS59130459A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58004163A JPS59130459A (ja) 1983-01-17 1983-01-17 半導体メモリ集積回路装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58004163A JPS59130459A (ja) 1983-01-17 1983-01-17 半導体メモリ集積回路装置

Publications (2)

Publication Number Publication Date
JPS59130459A JPS59130459A (ja) 1984-07-27
JPH045271B2 true JPH045271B2 (en, 2012) 1992-01-30

Family

ID=11577070

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58004163A Granted JPS59130459A (ja) 1983-01-17 1983-01-17 半導体メモリ集積回路装置

Country Status (1)

Country Link
JP (1) JPS59130459A (en, 2012)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61222254A (ja) * 1985-03-28 1986-10-02 Toshiba Corp 半導体記憶装置
JPH0746702B2 (ja) * 1986-08-01 1995-05-17 株式会社日立製作所 半導体記憶装置
KR100215851B1 (ko) * 1995-12-26 1999-08-16 구본준 반도체 소자의 구조

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54113270A (en) * 1978-02-23 1979-09-04 Nec Corp Semiconductor device
US4724530A (en) * 1978-10-03 1988-02-09 Rca Corporation Five transistor CMOS memory cell including diodes
SE444484B (sv) * 1979-02-26 1986-04-14 Rca Corp Integrerad kretsanordning innefattande bl a en minnescell med en forsta och en andra inverterare
DE3028111A1 (de) * 1980-07-24 1982-02-18 Siemens AG, 1000 Berlin und 8000 München Halbleiterbauelement und seine verwendung fuer statische 6-transistorzelle

Also Published As

Publication number Publication date
JPS59130459A (ja) 1984-07-27

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