JPH0450756A - Amine sensor - Google Patents
Amine sensorInfo
- Publication number
- JPH0450756A JPH0450756A JP16033890A JP16033890A JPH0450756A JP H0450756 A JPH0450756 A JP H0450756A JP 16033890 A JP16033890 A JP 16033890A JP 16033890 A JP16033890 A JP 16033890A JP H0450756 A JPH0450756 A JP H0450756A
- Authority
- JP
- Japan
- Prior art keywords
- sensor
- amine
- sensitivity
- ruo2
- added
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 150000001412 amines Chemical class 0.000 title claims abstract description 18
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 abstract description 23
- 230000035945 sensitivity Effects 0.000 abstract description 19
- GETQZCLCWQTVFV-UHFFFAOYSA-N trimethylamine Chemical compound CN(C)C GETQZCLCWQTVFV-UHFFFAOYSA-N 0.000 abstract description 14
- YBCAZPLXEGKKFM-UHFFFAOYSA-K ruthenium(iii) chloride Chemical compound [Cl-].[Cl-].[Cl-].[Ru+3] YBCAZPLXEGKKFM-UHFFFAOYSA-K 0.000 abstract description 7
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 abstract description 5
- 238000000034 method Methods 0.000 abstract description 4
- 239000004065 semiconductor Substances 0.000 abstract description 4
- 241000251468 Actinopterygii Species 0.000 abstract description 3
- 229910044991 metal oxide Inorganic materials 0.000 abstract description 2
- 150000004706 metal oxides Chemical class 0.000 abstract description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 235000015170 shellfish Nutrition 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 11
- 238000005259 measurement Methods 0.000 description 9
- 238000010586 diagram Methods 0.000 description 8
- -1 amine compounds Chemical class 0.000 description 7
- 239000000654 additive Substances 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- PAYRUJLWNCNPSJ-UHFFFAOYSA-N Aniline Chemical compound NC1=CC=CC=C1 PAYRUJLWNCNPSJ-UHFFFAOYSA-N 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- 230000000996 additive effect Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000002253 acid Substances 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 239000007864 aqueous solution Substances 0.000 description 3
- 235000014102 seafood Nutrition 0.000 description 3
- 239000007858 starting material Substances 0.000 description 3
- 229910019897 RuOx Inorganic materials 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- QZPSXPBJTPJTSZ-UHFFFAOYSA-N aqua regia Chemical compound Cl.O[N+]([O-])=O QZPSXPBJTPJTSZ-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 230000001235 sensitizing effect Effects 0.000 description 1
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- DANYXEHCMQHDNX-UHFFFAOYSA-K trichloroiridium Chemical compound Cl[Ir](Cl)Cl DANYXEHCMQHDNX-UHFFFAOYSA-K 0.000 description 1
- 210000002700 urine Anatomy 0.000 description 1
Landscapes
- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
- Catalysts (AREA)
Abstract
Description
【発明の詳細な説明】
[発明の利用分野1
この発明は、アンモニア、トリメチルアミン、アニリン
等のアミン化合物のセンサに関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Application of the Invention 1] This invention relates to a sensor for amine compounds such as ammonia, trimethylamine, and aniline.
[従来技術]
アンモニア、トリメチルアミン、アニリン等のアミン化
合物は代表的な悪臭物質の1つであり、その臭いは鮮魚
類の腐敗臭として知られている。[Prior Art] Amine compounds such as ammonia, trimethylamine, and aniline are one of the typical malodorous substances, and the odor thereof is known as the odor of putrid fresh fish.
アミン化合物を代表するものとしてトリメチルアミンを
用いることが一般的であり、鮮魚類から発生するトリメ
チルアミン濃度を測定し、魚介類の鮮度判定を行うこと
が提案されている。しかしながら、半導体ガスセンサの
アミン化合物への感度は低く、魚介類の鮮度判定への応
用は困難であるなお特開昭60−202.345号は、
WO3に2〜10重量%のRuO2を添加したガスセン
サを開示している。このガスセンサは一酸化炭素用のガ
スセンサであり、2〜10重量%のRub、添加は、R
u/Wの原子比に換算すると3.5〜17原子%の添加
に相当する。発明者らはこのガスセンサの追試を行った
が、センサはアミン感度を示さなかった(第3図、第4
図参照)。Trimethylamine is generally used as a representative amine compound, and it has been proposed to determine the freshness of seafood by measuring the concentration of trimethylamine generated from fresh fish. However, the sensitivity of semiconductor gas sensors to amine compounds is low, making it difficult to apply them to determining the freshness of seafood.
A gas sensor is disclosed in which 2 to 10% by weight of RuO2 is added to WO3. This gas sensor is a gas sensor for carbon monoxide, and contains 2 to 10% by weight of Rub.
When converted to an atomic ratio of u/W, this corresponds to addition of 3.5 to 17 atomic %. The inventors performed additional tests on this gas sensor, but the sensor did not show amine sensitivity (Figures 3 and 4).
(see figure).
[発明の課題]
この発明の課題は、アミン化合物に高感度な半導体ガス
センサを提供することにある。[Problem of the Invention] An object of the present invention is to provide a semiconductor gas sensor that is highly sensitive to amine compounds.
[発明の構成]
この発明では、WOlにRu/Wの原子比で0゜01〜
0.6 (Ru/W a t m、%)のRuO’2を
添加する。WO8はアミン感度の高い金属酸化物半導体
であり、これにRu/Wの原子比で0.01原子%以上
のRuO2を添加するとアミン感度が著しく向上し、0
.6%原子程度まで高いアミン感度が得られる。以下R
u/Wの原子比を%単位で表した単位を、単に%あるい
は原子%という。なおWO,の火蓋は231.9、Ru
5tの火蓋は133、1であり、Ru/Wで1原子%の
Ru O2は0.57Ru02/WO,重量%に相当す
る。一方IW子%を越えるRuO2添加では、アミン感
度は失われてしまう。[Structure of the Invention] In this invention, the WOl has an atomic ratio of Ru/W of 0°01 to
0.6 (Ru/W at m, %) of RuO'2 is added. WO8 is a metal oxide semiconductor with high amine sensitivity, and when RuO2 is added to it in an Ru/W atomic ratio of 0.01 atomic % or more, the amine sensitivity is significantly improved, and 0.
.. High amine sensitivity can be obtained up to about 6% atoms. Below R
The unit expressing the u/W atomic ratio in % is simply called % or atomic %. In addition, the fire cover of WO, is 231.9, Ru
A 5t fire lid is 133.1, and 1 atomic % RuO2 in Ru/W corresponds to 0.57 Ru02/WO, weight %. On the other hand, when RuO2 is added in excess of IW%, amine sensitivity is lost.
Rub、に変えPtやPcl、 I r、Auを用いて
も、アミンへの増感作用は得られない。Even if Pt, Pcl, Ir, or Au is used instead of Rub, no sensitizing effect to amines can be obtained.
[実施例]
センサの調製
タングステン酸アンモニウムを500℃で熱分解し、粉
砕後に塩化ルテニウム(4価)水溶液を含浸させ、50
0℃で塩化ルテニウムを熱分解した。塩化ルテニウムを
含浸させたWO,をアルミナパイプの表面に塗布し、7
00°Cで5分間焼結し、センサとした。塩化ルテニウ
ムに変え、塩化白金酸、Pctの王水溶液、塩化イリジ
ウム、塩化金酸の各水溶液を加え、比較例のセンサとし
た。[Example] Preparation of sensor Ammonium tungstate was thermally decomposed at 500°C, crushed and then impregnated with a ruthenium chloride (tetravalent) aqueous solution.
Ruthenium chloride was thermally decomposed at 0°C. Apply WO impregnated with ruthenium chloride to the surface of the alumina pipe, and
The sensor was sintered at 00°C for 5 minutes. Instead of ruthenium chloride, aqueous solutions of chloroplatinic acid, Pct aqua regia, iridium chloride, and chloroauric acid were added to prepare a comparative sensor.
またタングステン酸アンモニウムに変え、WO。Also changed to ammonium tungstate and used WO.
を出発母材としたものを用い、同様のセンサを調製した
。更にWO3に変え、スズ酸のゾルを500℃で熱分解
したものを用い、同様に塩化ルテニウムの水溶液を含浸
させ、熱分解後に焼結してセンサとした。A similar sensor was prepared using the starting base material. Further, instead of using WO3, a sol of stannic acid was thermally decomposed at 500° C., impregnated with an aqueous solution of ruthenium chloride in the same manner, and sintered after thermal decomposition to form a sensor.
WO3の調整方法やRuO2の添加方法、あるいはセン
サの構造は任意である。またセンサには、アルミナゾル
、シリカゾル等のバインダーを焼結時に加えても良い。The method of adjusting WO3, the method of adding RuO2, and the structure of the sensor are arbitrary. Further, a binder such as alumina sol or silica sol may be added to the sensor during sintering.
なおタングステン酸アンモニウムを出発材料としたもの
も、WO,を出発材料としたものも、同等の結果を示し
たので、以下タングステン酸アンモニウムを出発材料と
するセンサについて説明する。Note that both the sensor using ammonium tungstate as a starting material and the sensor using WO as a starting material showed equivalent results, so the sensor using ammonium tungstate as a starting material will be described below.
第8図に、センサの構造を示す。2はRuO2を添加し
たWOsの厚膜、4はアルミナパイプ、6゜8は一対の
電極、10はヒータである。FIG. 8 shows the structure of the sensor. 2 is a thick film of WOs doped with RuO2, 4 is an alumina pipe, 6°8 is a pair of electrodes, and 10 is a heater.
−性
第1図に、WO,に0.1*子%のRub、を加えたセ
ンサについて、280℃での結果を示す。結果は、エタ
ノール1oOpprn中での抵抗値R0を基準に示す。Figure 1 shows the results at 280°C for a sensor in which WO and 0.1% Rub were added. The results are shown based on the resistance value R0 in ethanol 10Opprn.
水素への感度は低く、トリメチルアミン(T M A
) 、 N Hs 、エタノールにほぼ同等の感度を示
す。Sensitivity to hydrogen is low, and trimethylamine (TMA
), NHs, and ethanol.
第2図に、同じセンサについて350℃での結果を示す
。この温度でも、TMAやNH,への感度は高い。Figure 2 shows the results for the same sensor at 350°C. Even at this temperature, the sensitivity to TMA and NH is high.
第3図に、Ru Ox / W Os系センサについて
、Ru0z濃度の影響を示す。測定温度は280℃、縦
軸は各1100ppのガスへの感度を示す。0、O1尿
原子のRu添加でアミン感度は著しく増加し、0.1原
子%付近に最適値があり、0.5*子%でも高いアミン
感度が得られる。しかし1原子%以上の添加では、アミ
ン感度は失われる。FIG. 3 shows the influence of the RuOz concentration on the RuOx/WOs-based sensor. The measurement temperature was 280° C., and the vertical axis indicates the sensitivity to each 1100 pp gas. The amine sensitivity increases significantly with the addition of Ru of 0 and O1 urine atoms, with an optimum value around 0.1 atomic %, and high amine sensitivity can be obtained even at 0.5 * atomic %. However, if 1 atomic % or more is added, amine sensitivity is lost.
第4図に、Ru Ot / W Os系センサについて
、350℃でのRub、濃度の影響を示す。第3図と同
様、o、oi〜0.5原子%で、高いアミン感度が得ら
れる。FIG. 4 shows the influence of Rub and concentration at 350° C. for the RuOt/WOs system sensor. As in FIG. 3, high amine sensitivity can be obtained at o, oi to 0.5 atom %.
第5図に、WO3に対する各0.1原子%の添加効果を
示す(測定温度280℃)。Ru Os以外の添加物で
は、アミンへの感度は低い。第6図に、350℃の測定
温度での結果を示す。RuOx以外では、アミン感度は
低い。FIG. 5 shows the effect of each addition of 0.1 atomic % to WO3 (measurement temperature: 280° C.). Additives other than RuOs have low sensitivity to amines. FIG. 6 shows the results at a measurement temperature of 350°C. Amine sensitivity is low except for RuOx.
第7図に、430℃でのTMAへの応答特性を示す。縦
軸はセンサ抵抗Rsを示す。FIG. 7 shows the response characteristics to TMA at 430°C. The vertical axis indicates the sensor resistance Rs.
SnO,/RuO2センサとWO3/Ru0zセンサの
比較結果を表1に示す。測定温度は280℃である。Table 1 shows the comparison results between the SnO,/RuO2 sensor and the WO3/Ru0z sensor. The measurement temperature is 280°C.
表 1 SnO□系 0.1原子%Rub。Table 1 SnO□ series 0.1 atomic% Rub.
1.0原子%Ru O2
WO3系
0.1原子%Ru01 35 90 401.
0*子%Ru5t 1.5 2 3*
感度は、各1100ppのガスを用いて測定。1.0 atomic% Ru O2 WO3 system 0.1 atomic% Ru01 35 90 401.
0*child%Ru5t 1.5 2 3*
Sensitivity was measured using 1100pp of each gas.
[発明の効果]
この発明では、トリメチルアミン等のアミン化合物に高
感度なガスセンサが得られ、魚介類の鮮度判定等の利用
が可能になる。[Effects of the Invention] According to the present invention, a gas sensor that is highly sensitive to amine compounds such as trimethylamine can be obtained, and the sensor can be used for determining the freshness of seafood, etc.
1.41.4
m1図は、実施例の特性図(Ru/Wの原子比0.1%
、測定温度280℃)、
第2図は、実施例の特性図(Ru/Wの原子比0.1%
、測定温度350℃)、
第3図は、Ru / W比を変えた際の実施例の特性図
(測定温度280℃)、
$4r!lJは、Ru/W比を変えた際の実施例の特性
図(測定温度350℃)、
第5図は、添加物の種類の効果を示す特性図(測定温度
280℃)、
第6図は、添加物の種類の効果を示す特性図(w定温度
350℃)、
第7図は、実施例の応答波形を示す特性図(測定温度4
30℃)、
第8図は、実施例のセンサの断面図である。
第
図
Gas Cone、 (pprn)
100 1α刀
Gas Conc、(pl:XTI)
第
図
Ru/W(atm、’10)
第
図
on
u
t
d
r
u
添加物(0,1atm 、’10)
第4
図
Ru/W(atmolo)
第
図
添加物(1Ωatm、’10)The m1 diagram is a characteristic diagram of the example (Ru/W atomic ratio 0.1%).
, measurement temperature 280°C), Figure 2 is a characteristic diagram of the example (Ru/W atomic ratio 0.1%).
, measurement temperature: 350℃), Figure 3 is a characteristic diagram of the example when the Ru/W ratio is changed (measurement temperature: 280℃), $4r! lJ is the characteristic diagram of the example when changing the Ru/W ratio (measurement temperature 350 ° C), Figure 5 is the characteristic diagram showing the effect of the type of additive (measurement temperature 280 ° C), Figure 6 is , a characteristic diagram showing the effect of the type of additive (w constant temperature 350°C), and Figure 7 a characteristic diagram showing the response waveform of the example (measured temperature 4
30° C.), FIG. 8 is a cross-sectional view of the sensor of the example. Fig. Gas Cone, (pprn) 100 1α Gas Conc, (pl:XTI) Fig. Ru/W (atm, '10) Fig. on u t d r u Additive (0,1 atm, '10) Figure Ru/W (atmolo) Figure Additive (1Ωatm, '10)
Claims (1)
0.01〜0.6原子%添加した、アミンセンサ。(1) RuO_2 in WO_3 at the atomic ratio of Ru/W,
An amine sensor containing 0.01 to 0.6 at%.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16033890A JP2868845B2 (en) | 1990-06-18 | 1990-06-18 | Amine sensor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16033890A JP2868845B2 (en) | 1990-06-18 | 1990-06-18 | Amine sensor |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH0450756A true JPH0450756A (en) | 1992-02-19 |
JP2868845B2 JP2868845B2 (en) | 1999-03-10 |
Family
ID=15712821
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16033890A Expired - Fee Related JP2868845B2 (en) | 1990-06-18 | 1990-06-18 | Amine sensor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2868845B2 (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6096267A (en) * | 1997-02-28 | 2000-08-01 | Extraction Systems, Inc. | System for detecting base contaminants in air |
US6855557B2 (en) | 1999-01-14 | 2005-02-15 | Extraction Systems, Inc. | Detection of base contaminants in gas samples |
JP2007196850A (en) * | 2006-01-26 | 2007-08-09 | Honda Motor Co Ltd | Lawn mower |
CN113340944A (en) * | 2021-06-11 | 2021-09-03 | 郑州轻工业大学 | Pt-ZnO @ TiC ternary material for high-sensitivity aniline detection and preparation method and application thereof |
CN113758974A (en) * | 2021-08-30 | 2021-12-07 | 中国科学院合肥物质科学研究院 | Oxide semiconductor gas sensor and preparation method and application thereof |
-
1990
- 1990-06-18 JP JP16033890A patent/JP2868845B2/en not_active Expired - Fee Related
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6096267A (en) * | 1997-02-28 | 2000-08-01 | Extraction Systems, Inc. | System for detecting base contaminants in air |
US6296806B1 (en) | 1997-02-28 | 2001-10-02 | Extraction Systems, Inc. | Protection of semiconductor fabrication and similar sensitive processes |
US6855557B2 (en) | 1999-01-14 | 2005-02-15 | Extraction Systems, Inc. | Detection of base contaminants in gas samples |
JP2007196850A (en) * | 2006-01-26 | 2007-08-09 | Honda Motor Co Ltd | Lawn mower |
CN113340944A (en) * | 2021-06-11 | 2021-09-03 | 郑州轻工业大学 | Pt-ZnO @ TiC ternary material for high-sensitivity aniline detection and preparation method and application thereof |
CN113758974A (en) * | 2021-08-30 | 2021-12-07 | 中国科学院合肥物质科学研究院 | Oxide semiconductor gas sensor and preparation method and application thereof |
Also Published As
Publication number | Publication date |
---|---|
JP2868845B2 (en) | 1999-03-10 |
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