JPS58212101A - Moisture sensor - Google Patents

Moisture sensor

Info

Publication number
JPS58212101A
JPS58212101A JP57095226A JP9522682A JPS58212101A JP S58212101 A JPS58212101 A JP S58212101A JP 57095226 A JP57095226 A JP 57095226A JP 9522682 A JP9522682 A JP 9522682A JP S58212101 A JPS58212101 A JP S58212101A
Authority
JP
Japan
Prior art keywords
humidity
humidity sensor
moisture
conductivity
change
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57095226A
Other languages
Japanese (ja)
Other versions
JPS6355845B2 (en
Inventor
大塚 秀昭
昭彦 山路
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP57095226A priority Critical patent/JPS58212101A/en
Publication of JPS58212101A publication Critical patent/JPS58212101A/en
Publication of JPS6355845B2 publication Critical patent/JPS6355845B2/ja
Granted legal-status Critical Current

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  • Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Non-Adjustable Resistors (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】 サに関するもUJである。[Detailed description of the invention] Regarding Sa, it is also UJ.

従来の湿度センサは1有機材料・セラミック材料ご感湿
体として柑いているものが大乱分な占めている。湿度測
定には感湿体へaノ水分Vノ吸着による盲気抵抗の変化
を応用しているものがほとんどである。湿度センサでは
水分の吸脱着が容易であることが必要であり、加熱クリ
ーニングにより吸着前の表面状態に戻丁ことかでさるこ
とが必要である。感湿体として有機材料を用いた場合に
は、耐熱性に劣るため加熱クリーニングができないとい
う欠点がある。
Conventional humidity sensors are mostly made of organic or ceramic materials as moisture sensing elements. Most humidity measurements utilize changes in blind resistance due to adsorption of water (a) and (v) onto a humidity sensitive body. Humidity sensors need to be able to easily absorb and desorb moisture, and it is necessary to return the surface to its pre-adsorption surface state by heating and cleaning. When an organic material is used as a moisture sensitive member, there is a drawback that heating cleaning is not possible due to poor heat resistance.

セラミック材料を感湿体として用いる場合も同様に水分
の吸脱着が容易であることが必要である。
When using a ceramic material as a moisture sensitive body, it is also necessary that it can easily absorb and desorb moisture.

金属酸化物系セラミック材料の場合でも高温TJO熱ク
リーニングにより表面構造が変化するものが多く、繰り
返し使用することかでさないものが多い。
Even in the case of metal oxide ceramic materials, the surface structure of many materials changes due to high-temperature TJO thermal cleaning, and many materials cannot be used repeatedly.

又、従来知らnでいるセラミック感湿体では、湿度の変
化による導電率ら変化が湿度θ%〜100%で大体/ 
0’のオーダーである。しかしナカら、感度を上げるた
めには導電率の変化が更に大さいことが必要であるoし
たがって従来から導電率の変化が上記より更に大きい材
料の出現が望xnていた。
In addition, in the conventionally known ceramic humidity sensing element, the change in conductivity due to changes in humidity is approximately // at humidity θ% to 100%.
It is of the order of 0'. However, in order to increase the sensitivity, it is necessary that the change in conductivity be even larger.Therefore, it has been desired to develop a material with a change in conductivity that is even larger than the above.

歪発明は、多孔質構造を有しており、吸湿性の良イLi
,Zr2Si,PO1, 、、及びそノZ.r <Mg
. Zn等の2価元素、希土類元素及びSc等の三価元
素、及びTiの弘価元素で置換しT−ダ料【感湿体とし
て用いたことTt#f徴とTるもので、その目的Cま、
感度が高く、しかも長期間の繰り返し使用に耐え得る湿
度センサを提供Tることにある。
The strained invention has a porous structure and has good hygroscopicity.
, Zr2Si,PO1, , and sonoZ. r<Mg
.. T-darium is substituted with divalent elements such as Zn, trivalent elements such as rare earth elements and Sc, and divalent elements such as Ti. C.
To provide a humidity sensor that has high sensitivity and can withstand repeated use over a long period of time.

以下、本発明について詳細に説明Tる。The present invention will be explained in detail below.

湿度センサ用として使用される感湿体としては、電気抵
抗の湿度依存性が大さく、水分の吸脱着性が良イコトカ
必IF’ ”C’ h ル。L i、Zr28 i、P
O,z  Gt、本来Li イオン導電性の固体電解質
であり、結晶構造も三次元的網目構造をしており、多孔
質構造を示す。そのため、この系の材料は吸湿性が著し
く、また100−/!;0℃程度の即熱処理により水分
の脱離が容易であり、その繰り返しにより結晶が破壊■
ることも表面構造が変化Tることもない。
A moisture-sensitive body used for a humidity sensor must have a high dependence of electrical resistance on humidity and good moisture adsorption/desorption properties.Li, Zr28i, P
O,z Gt is originally a solid electrolyte with Li ion conductivity, and its crystal structure also has a three-dimensional network structure and exhibits a porous structure. Therefore, this type of material is extremely hygroscopic and has a hygroscopicity of 10-/! ; Moisture is easily removed by immediate heat treatment at around 0°C, and crystals are destroyed by repeating this process.
There is no change in the surface structure.

Li、Zr、8i、PO,、9J導電率番コ、室温にお
いて湿度0%で、〜み×lOΩα1であるが、湿度jS
%でコ×fθ ΩclIL まで増大し、その変化量は
〜lθ6σノオーダーに乏で達Tる。
Li, Zr, 8i, PO,, 9J conductivity number, at room temperature and humidity 0%, ~mi x lOΩα1, but humidity jS
%, it increases to ko×fθ ΩclIL, and the amount of change reaches T on the order of ~lθ6σ.

Li3Zr、Si、PO,、c2、そのZry22価−
3価・弘価の元素で置換できる。Zn、 Mg %希土
類元素(Snx (3d、Dy、La 等)Tii2、
いずnもZr92りat%まで置換し、固溶体を得るこ
とかでさる。
Li3Zr, Si, PO,, c2, its Zry22 valence -
It can be replaced with trivalent and ferrovalent elements. Zn, Mg% rare earth elements (Snx (3d, Dy, La, etc.) Tii2,
Both n and Zr are substituted up to at% by Zr92 to obtain a solid solution.

又8cは2jat%Iで固溶Tる。Further, 8c is dissolved in solid solution at 2 jat% I.

Lt、Zr25+2P0,2(’JZr k上kl(l
Jjうに置換した材料の乾燥した状部、湿度Q%での導
電率に・Lt、Zr25 +、PO,,’−’it率〕
−〜−; T: ;h /り。又、高湿度での導電率は
ほとんど同じであるから、湿度変化による導電率の変化
!は、Zrの数at%σ〕置換により増加する。
Lt, Zr25+2P0,2('JZr k upper kl(l
Jj The dry part of the material substituted with sea urchin, the conductivity at humidity Q%, Lt, Zr25 +, PO,,'-'it rate]
-~-; T: ;h/ri. Also, since the conductivity at high humidity is almost the same, the conductivity changes due to changes in humidity! increases by substitution of Zr number at% σ].

次に、本発明を実施例に沿って説明Tるが、本発明は、
こnらによりなんら限定21’nるものではない。
Next, the present invention will be explained along with examples.
These are not intended to be limiting in any way.

実施例1 1e、湿体トL/ テL 13Zr2S i、PO,、
2由イe場iニついて述べる。素子構造P第1図に示す
。感湿体への両面に銀電極1を形成し、これに測定用の
リード端子2を付けたものが基本構造である。電極は、
銀のみならず、Au、 Pi、 AJI、 Pd、 A
g−Pd  等を使用Tることも可能であの0この素子
に微小電流CIO〜lθ0μA)を流してその電圧変化
を測定τるか、直接抵抗変化を測定Tるごとによって湿
度を測定Tることかでさる。
Example 1 1e, wet body L/TE L 13Zr2S i, PO,,
2. Let's talk about e-bai. The element structure P is shown in FIG. The basic structure is that silver electrodes 1 are formed on both sides of the moisture sensitive body, and lead terminals 2 for measurement are attached to these. The electrode is
Not only silver, but also Au, Pi, AJI, Pd, A
It is also possible to use a device such as g-Pd, and measure the humidity by passing a minute current (CIO~lθ0μA) through this element and measuring the voltage change, or by directly measuring the resistance change. A giant monkey.

次に感湿体の作製について述べる。丁ず、出発原料テh
ルNa、CO8、ZrO,,5i(J2、NH,H,P
O,+Na、Zr、S i、PO,□ なる組成式にな
るように挿置し、混合した後、1000℃で6時間大気
中で焼収する。こnを粉砕し、重置比で10倍の、[,
1No3 ’?r加え、白金るつぼ中にて、350℃で
2g時間熱処理?行い、NaとLiのイオン置換を行っ
た。
Next, the preparation of the humidity sensitive body will be described. Ding, starting material
Le Na, CO8, ZrO,, 5i (J2, NH, H, P
After being inserted and mixed so that the composition formula becomes O, +Na, Zr, Si, PO, □, it is burned in the air at 1000° C. for 6 hours. Grind this n and mix it with 10 times the weight ratio [,
1No3'? Add r and heat treat at 350℃ for 2g hours in a platinum crucible? ion replacement of Na and Li.

こn?を十分水洗することにより過剰のLiNO3、及
びNaNO3を除去し乾燥Tる。得らnT−Li、Zr
25i2PO,、粉末H−,tgθ℃で!; 00 k
g/cdσ」プレス圧で二時間ホットプレス法により作
製した。この材料を用いて、第1図に示しT−素子を作
製し、その抵抗を測定した。舅2図に抵抗の湿度依存性
ご示T0抵抗値Oゴ、湿度の変化に対して指数関数的に
変化T7)。か1えばユ0°Cにおける場合、湿度θ%
のとさ17 X / QI0Ω、ざ3%のときψ×lθ
3で6桁の変化を示す。I ’r−、可逆性の面も高湿
度から低湿度側へ走査した場合の抵抗のずnも小キ〈・
lQO〜tso”cで加熱処理ETることにより一容易
に元に復帰する。
This? Excess LiNO3 and NaNO3 are removed by thoroughly washing with water, and then dried. Obtained nT-Li, Zr
25i2PO,, powder H-, tgθ℃! ;00k
It was produced by a hot press method for two hours at a press pressure of "g/cdσ". Using this material, a T-element shown in FIG. 1 was manufactured and its resistance was measured. Figure 2 shows the humidity dependence of resistance (T0 resistance value O), which changes exponentially with changes in humidity (T7). For example, if the temperature is 0°C, the humidity θ%
Notosa 17
3 indicates a 6-digit change. I'r-, the reversible surface also has a small resistance difference when scanning from high humidity to low humidity.
It is easily restored to its original state by heat treatment ET at lQO~tso''c.

実施例2 Li、Zr、Si、PO,、ノZr 2Zn、〜ig、
 Sm、 Gd。
Example 2 Li, Zr, Si, PO,, Zr 2Zn, ~ig,
Sm, Gd.

Sc、Tiで置換シタ、Li、Zr、JZn、)、5i
2PO1,、L 13Z rlJMg62812 P 
C>12 、L 13J)5 Z rI、g Smo、
 S 12 P 011、L l B、B5 Z r 
HJGd6J812 P(J12 、L 131Z r
l、755C62s S12 P C%2・及びLi、
Zr、JTi、、8i、PO,、を感湿体トシテ用いた
湿度センサーを作製した。構造は実施例1と同じである
。感湿体であるセラミック材料の作製G=、出発原料の
段階で添加元素を組成式に従い秤量、添加し、後は実施
例1と同様の方法で作製した。
Sc, Ti substituted Sita, Li, Zr, JZn,), 5i
2PO1,, L 13Z rlJMg62812 P
C>12, L 13J) 5 Z rI, g Smo,
S 12 P 011, L l B, B5 Z r
HJGd6J812 P (J12, L 131Z r
l, 755C62s S12 P C%2・and Li,
A humidity sensor using Zr, JTi, 8i, PO, as a humidity sensor was fabricated. The structure is the same as in Example 1. Preparation of Ceramic Material as Humidity Sensing Body G=Additional elements were weighed and added according to the compositional formula at the stage of starting raw materials, and the rest was produced in the same manner as in Example 1.

こわらの材料を感湿体として用いたセンサの電気抵抗の
湿度依存性は、実施%lのL i、Z r、Si2 )
&0゜P用いた場合とほとんど同様であるが、乾燥状部
での導電率が小ざい分だけ電気抵抗の湿度に対Tる変化
量が大さい。
The humidity dependence of the electrical resistance of a sensor using a stiff material as a humidity sensitive body is determined by the following equation: Li, Zr, Si2)
Although it is almost the same as when &0°P is used, the amount of change in electrical resistance with respect to humidity is large due to the small conductivity in the dry area.

以上説明したように、本発明によるLi、Zr、5i2
PO,!糸材料を中いた湿度センサは、L i、Z r
、S i、PU、、 の吸湿性の良さ、吸着水分による
導電率の変化の大さぎにより、湿度の変化に対してto
6Ωのオーダー以上の抵抗変化を示す。このように、こ
の材料を感湿体として用いた湿度センサーは高感度が得
らnる。
As explained above, Li, Zr, 5i2 according to the present invention
PO,! The humidity sensor inside the thread material is L i, Z r
, S i, PU, , due to its good hygroscopicity and the large change in conductivity caused by adsorbed moisture, it is highly resistant to changes in humidity.
It exhibits a resistance change on the order of 6Ω or more. As described above, a humidity sensor using this material as a moisture sensitive element has high sensitivity.

【図面の簡単な説明】[Brief explanation of drawings]

第を図は本発明による湿度センサの断面図、第2図はL
i、Zr、Si、POl、  を用いた素子の抵抗の湿
度依存性を示したグラフである。 A・・・・・・感湿体、l・・・・・・電極、2・・・
・・・リード端子。 出如人 日本電信電話公社 第1図
Figure 1 is a sectional view of the humidity sensor according to the present invention, and Figure 2 is L.
3 is a graph showing the humidity dependence of the resistance of an element using i, Zr, Si, POl, and the like. A...Moisture sensitive body, l...electrode, 2...
...Lead terminal. Dejojin Nippon Telegraph and Telephone Public Corporation Figure 1

Claims (1)

【特許請求の範囲】 1、Li、Zr2Si、PO,、zル磁器組成物を感湿
体トシて用いることを特徴とする湿度センサ。 2、  L i、Zr28 t2Po、、のZrをQ〜
gat%の範囲でz’v1g 、 Zn 、希土類元素
、及びTi等の2価、3価、φ価の元素、あるいは、θ
〜コタat%の範囲で8cのいすnかあるいは複数1−
の置換により得らnる磁器組成物を感湿体として用いる
ことP特徴とTる湿度センサ。
[Claims] 1. A humidity sensor characterized in that a porcelain composition of Li, Zr2Si, PO, etc. is used as a humidity sensor. 2. Li, Zr28 t2Po, , Zr is Q~
divalent, trivalent, φ-valent elements such as z'v1g, Zn, rare earth elements, and Ti, or θ in the range of gat%.
8c chairs or more than 1- in the range of ~ kota at%
A humidity sensor characterized by using a porcelain composition obtained by replacing the above as a humidity sensor.
JP57095226A 1982-06-03 1982-06-03 Moisture sensor Granted JPS58212101A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57095226A JPS58212101A (en) 1982-06-03 1982-06-03 Moisture sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57095226A JPS58212101A (en) 1982-06-03 1982-06-03 Moisture sensor

Publications (2)

Publication Number Publication Date
JPS58212101A true JPS58212101A (en) 1983-12-09
JPS6355845B2 JPS6355845B2 (en) 1988-11-04

Family

ID=14131837

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57095226A Granted JPS58212101A (en) 1982-06-03 1982-06-03 Moisture sensor

Country Status (1)

Country Link
JP (1) JPS58212101A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3026791U (en) * 1995-09-18 1996-07-23 秀次 中村 Flowerpot with holes only on the side

Also Published As

Publication number Publication date
JPS6355845B2 (en) 1988-11-04

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