JPH0449784B2 - - Google Patents
Info
- Publication number
- JPH0449784B2 JPH0449784B2 JP59027590A JP2759084A JPH0449784B2 JP H0449784 B2 JPH0449784 B2 JP H0449784B2 JP 59027590 A JP59027590 A JP 59027590A JP 2759084 A JP2759084 A JP 2759084A JP H0449784 B2 JPH0449784 B2 JP H0449784B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- capacitive element
- capacitance
- electrode
- epitaxial layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
- H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
- H10D84/206—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of combinations of capacitors and resistors
Landscapes
- Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59027590A JPS60170964A (ja) | 1984-02-15 | 1984-02-15 | 容量素子 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59027590A JPS60170964A (ja) | 1984-02-15 | 1984-02-15 | 容量素子 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60170964A JPS60170964A (ja) | 1985-09-04 |
| JPH0449784B2 true JPH0449784B2 (cg-RX-API-DMAC7.html) | 1992-08-12 |
Family
ID=12225160
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59027590A Granted JPS60170964A (ja) | 1984-02-15 | 1984-02-15 | 容量素子 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60170964A (cg-RX-API-DMAC7.html) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6292458A (ja) * | 1985-10-18 | 1987-04-27 | Sanyo Electric Co Ltd | 半導体容量結合素子 |
| JPS6292459A (ja) * | 1985-10-18 | 1987-04-27 | Sanyo Electric Co Ltd | 半導体容量結合素子 |
| JP2623692B2 (ja) * | 1988-01-22 | 1997-06-25 | ソニー株式会社 | 半導体回路装置 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS547047B2 (cg-RX-API-DMAC7.html) * | 1973-06-28 | 1979-04-03 | ||
| US4214252A (en) * | 1977-08-06 | 1980-07-22 | U.S. Philips Corporation | Semiconductor device having a MOS-capacitor |
-
1984
- 1984-02-15 JP JP59027590A patent/JPS60170964A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60170964A (ja) | 1985-09-04 |