JPH0447987B2 - - Google Patents
Info
- Publication number
- JPH0447987B2 JPH0447987B2 JP56199122A JP19912281A JPH0447987B2 JP H0447987 B2 JPH0447987 B2 JP H0447987B2 JP 56199122 A JP56199122 A JP 56199122A JP 19912281 A JP19912281 A JP 19912281A JP H0447987 B2 JPH0447987 B2 JP H0447987B2
- Authority
- JP
- Japan
- Prior art keywords
- fet
- region
- drain
- source
- gate electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6758—Thin-film transistors [TFT] characterised by the insulating substrates
- H10D30/6759—Silicon-on-sapphire [SOS] substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6728—Vertical TFTs
Landscapes
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56199122A JPS5898974A (ja) | 1981-12-09 | 1981-12-09 | 縦型ｍｉｓ―ｆｅｔ |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56199122A JPS5898974A (ja) | 1981-12-09 | 1981-12-09 | 縦型ｍｉｓ―ｆｅｔ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5898974A JPS5898974A (ja) | 1983-06-13 |
| JPH0447987B2 true JPH0447987B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1992-08-05 |
Family
ID=16402500
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56199122A Granted JPS5898974A (ja) | 1981-12-09 | 1981-12-09 | 縦型ｍｉｓ―ｆｅｔ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5898974A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6076167A (ja) * | 1983-10-03 | 1985-04-30 | Semiconductor Energy Lab Co Ltd | 絶縁ゲイト型半導体装置 |
| JPS6076168A (ja) * | 1983-10-03 | 1985-04-30 | Semiconductor Energy Lab Co Ltd | 絶縁ゲイト型半導体装置作製方法 |
| US5283456A (en) * | 1992-06-17 | 1994-02-01 | International Business Machines Corporation | Vertical gate transistor with low temperature epitaxial channel |
-
1981
- 1981-12-09 JP JP56199122A patent/JPS5898974A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5898974A (ja) | 1983-06-13 |
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