JPH0447468B2 - - Google Patents
Info
- Publication number
- JPH0447468B2 JPH0447468B2 JP61038177A JP3817786A JPH0447468B2 JP H0447468 B2 JPH0447468 B2 JP H0447468B2 JP 61038177 A JP61038177 A JP 61038177A JP 3817786 A JP3817786 A JP 3817786A JP H0447468 B2 JPH0447468 B2 JP H0447468B2
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- metal substrate
- conductive layer
- insulating layer
- lighting device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000758 substrate Substances 0.000 claims description 45
- 229910052751 metal Inorganic materials 0.000 claims description 39
- 239000002184 metal Substances 0.000 claims description 39
- 239000004020 conductor Substances 0.000 claims description 4
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 claims description 3
- 238000010586 diagram Methods 0.000 description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Securing Globes, Refractors, Reflectors Or The Like (AREA)
- Fastening Of Light Sources Or Lamp Holders (AREA)
- Arrangement Of Elements, Cooling, Sealing, Or The Like Of Lighting Devices (AREA)
- Non-Portable Lighting Devices Or Systems Thereof (AREA)
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は多数の発光ダイオードを光源として使
用する車輌用灯具等に適用して好適な照明装置に
関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a lighting device suitable for application to a vehicle lamp or the like that uses a large number of light emitting diodes as a light source.
近年、半導体技術の発達により輝度の高い発光
ダイオードが開発され、しかも安価に入手できる
ようになつたことから、車輌用灯具、特に尾灯、
制動灯などの光源として電球の代りに使用するこ
とが検討されるに至つており、その一例として第
９図に示すものが知られている。すなわち、これ
は金属製の基板に発光ダイオード等の発光素子２
を配設した所謂オン・ホードタイプと呼ばれるも
ので、基板１の煩面には反射面を形成する多数の
素子収納凹部３が各発光素子２に対応して形成さ
れ、また基板表面には前記凹部３を含めて全面に
亘つて絶縁層４が印刷、蒸着等によつて形成され
さらにその上に共通導電層５が、また各凹部３内
には導電層６がそれぞれ形成され、この導電層６
上に前記発光素子２が配設されている。そして、
前記発光素子２は列（もしくは行）毎に、金線７
（ワイヤ）によつて前記導電層６を介して直列に
接続され、また各列（もしくは行）の発光素子は
電源に対して並列に接続されている。なお、端の
発光素子２ａは前記共通導電層５に金線７ａによ
つて電気的に接続されている。
In recent years, with the development of semiconductor technology, high-brightness light-emitting diodes have been developed and are now available at low prices, which has led to the development of light-emitting diodes for vehicles, especially taillights.
Consideration has been given to using the light bulb instead of a light bulb as a light source for brake lights and the like, and one example of this is shown in FIG. 9. That is, this is a metal substrate with a light emitting element 2 such as a light emitting diode.
This is a so-called on-hold type in which a large number of element housing recesses 3 forming reflective surfaces are formed on the round surface of the substrate 1 corresponding to each light emitting element 2. An insulating layer 4 is formed over the entire surface including the recesses 3 by printing, vapor deposition, etc. A common conductive layer 5 is formed thereon, and a conductive layer 6 is formed in each recess 3. 6
The light emitting element 2 is disposed on top. and,
The light emitting element 2 has a gold wire 7 for each column (or row).
(wires) via the conductive layer 6, and the light emitting elements in each column (or row) are connected in parallel to the power source. Note that the light emitting elements 2a at the ends are electrically connected to the common conductive layer 5 by gold wires 7a.
第１０図はこのような構成からなる照明装置の
電気回路を示し、Ｒは点灯用抵抗体である。 FIG. 10 shows an electric circuit of a lighting device having such a configuration, where R is a lighting resistor.
しかるに、かかる従来の照明装置においては、
基板１の表面全体に絶縁層４を蒸着等によつて形
成する際、素子収納凹部３の内部に対しては絶縁
層４を均一に形成することが難しく、基板１と導
電層６との絶縁性に問題があつた。また、導電層
６は凹部３内に形成されるものであるため、絶縁
層４と同様均一な膜厚で形成することが難しく製
造コストが嵩むという不都合があつた。
However, in such conventional lighting devices,
When forming the insulating layer 4 on the entire surface of the substrate 1 by vapor deposition or the like, it is difficult to form the insulating layer 4 uniformly inside the element housing recess 3, and the insulation between the substrate 1 and the conductive layer 6 is difficult to form. I had a problem with my sexuality. Further, since the conductive layer 6 is formed within the recess 3, it is difficult to form it with a uniform thickness like the insulating layer 4, which increases the manufacturing cost.
本発明に係る照明装置は上述したような問題を
解決すべくなされたもので、多数の発光素子を光
源とする照明装置において、良導体からなる金属
基板の表面に多数の素子収納凹部を形成し、それ
以外の表面を絶縁層にて被覆し、各素子収納凹部
に前記発光ダイオードをそれぞれ収納配置して前
記金属基板と電気的に導通させ、前記絶縁層の表
面の帯状の共通導電層を形成し、この共通導電層
と前記各発光素子をリード線によつて電気的に接
続し、かつ前記金属基板と前記共通導電層とを電
源に接続するようにしたものである。
The lighting device according to the present invention has been made to solve the above-mentioned problems, and in a lighting device using a large number of light emitting elements as a light source, a large number of element storage recesses are formed on the surface of a metal substrate made of a good conductor. The other surfaces are covered with an insulating layer, and the light emitting diodes are housed and arranged in each element housing recess to be electrically connected to the metal substrate, thereby forming a band-shaped common conductive layer on the surface of the insulating layer. The common conductive layer and each of the light emitting elements are electrically connected by lead wires, and the metal substrate and the common conductive layer are connected to a power source.
本発明においては素子収納凹部内に発光素子を
直接配設し、金属基板との導通を計つているの
で、凹部内に絶縁層と導電層を積層形成する必要
がなく、製作が容易である。
In the present invention, since the light emitting element is directly disposed within the element housing recess and electrical conduction with the metal substrate is achieved, there is no need to laminate an insulating layer and a conductive layer within the recess, and manufacturing is easy.
以下、本発明を図面に示す実施例に基づいて詳
細に説明する。
Hereinafter, the present invention will be described in detail based on embodiments shown in the drawings.
第１図は本発明に係る照明装置の基本的構成を
示す断面図、第２図は同装置の要部斜視図であ
る。なお、図中第９図および第１０図と同一構成
部材のものに対しては同一符号を以つて示し、そ
の説明を省略する。これらの図において、Al等
の良導体からなる金属基板１の表面には複数個の
素子収納凹部３がその長手方向に適宜な間隔をお
いて形成され、また凹部３を除く表面全体が絶縁
層４によつて被覆されている。共通導電層５は金
属基板１の長手方向に延在する如く前記絶縁層４
上に形成され、さらにこの絶縁層４上には複数個
のチツプ状の導電層１０が前記各素子収納凹部３
に対応して形成されている。 FIG. 1 is a sectional view showing the basic structure of a lighting device according to the present invention, and FIG. 2 is a perspective view of the main parts of the device. Components in the drawings that are the same as those in FIGS. 9 and 10 are designated by the same reference numerals, and their explanations will be omitted. In these figures, a plurality of element housing recesses 3 are formed at appropriate intervals in the longitudinal direction on the surface of a metal substrate 1 made of a good conductor such as Al, and the entire surface except for the recesses 3 is covered with an insulating layer 4. covered by. The common conductive layer 5 extends in the longitudinal direction of the metal substrate 1 and is connected to the insulating layer 4.
Further, on this insulating layer 4, a plurality of chip-shaped conductive layers 10 are formed in each of the element housing recesses 3.
It is formed correspondingly.
発光素子２は半導体チツプからなり、各素子収
納凹部３の底面中央にそれぞれ直接配設固定され
ることにより金属基板１と導通し、またリード線
としての金線７によつて当該素子に対応する前記
導電層１０にそれぞれ電気的に接続されている。
各導電層１０は前記共通導電層５に点灯用抵抗体
Ｒを介してそれぞれ接続されている。そして、金
属基板１と共通導電層５とはリード線１２，１３
を介して電源（図示せず）に接続されている。し
たがつて、発光素子２は電源に対して並列接続さ
れる。なお、前記点灯用抵抗体Ｒは印刷抵抗の方
が小さく形成できる点で有効であり、またチツプ
抵抗でもよい。 The light emitting elements 2 are made of semiconductor chips, and are electrically connected to the metal substrate 1 by being directly arranged and fixed at the center of the bottom of each element storage recess 3, and are connected to the elements by gold wires 7 as lead wires. They are electrically connected to the conductive layer 10, respectively.
Each conductive layer 10 is connected to the common conductive layer 5 via a lighting resistor R, respectively. The metal substrate 1 and the common conductive layer 5 are connected to lead wires 12 and 13.
is connected to a power source (not shown) via a power source (not shown). Therefore, the light emitting element 2 is connected in parallel to the power source. It should be noted that a printed resistor is more effective as the lighting resistor R because it can be made smaller, and a chip resistor may also be used.
前記素子収納凹部３は略逆梯形に形成されるこ
とにより、その内壁面３ａがアルミニウムの蒸
着、反射特性に優れた塗料の塗布等によつて反射
面を形成している。この反射面は金属基板１の全
体をメツキすることによつても形成し得る。前記
素子収納凹部３には透明な樹脂１４が充填されて
前記発光素子２をモールドしている。樹脂１４と
してはエポキシ樹脂等が使用され、その表面は略
半球状に膨出形成されることにより凸レンズを形
成している。なお、第２図においては樹脂１４を
省略している。 The element storage recess 3 is formed in a substantially inverted trapezoidal shape, and its inner wall surface 3a forms a reflective surface by vapor deposition of aluminum, coating with a paint having excellent reflective properties, or the like. This reflective surface can also be formed by plating the entire metal substrate 1. The element housing recess 3 is filled with a transparent resin 14 to mold the light emitting element 2. Epoxy resin or the like is used as the resin 14, and its surface is bulged into a substantially hemispherical shape to form a convex lens. Note that the resin 14 is omitted in FIG. 2.
第３図は上記構成からなる照明装置の電気回路
図で、１５は電源を示す。 FIG. 3 is an electrical circuit diagram of the lighting device having the above structure, and 15 indicates a power source.
第４図は上記照明装置を車輌用灯具として使用
した場合の例を示す断面図である。同図におい
て、２１はバツクカバー、２２は前面レンズ、２
３はインナーレンズ、２４は放熱用孔である。イ
ンナーレンズ２３の表面には多数の魚眼集光レン
ズ２５が各発光素子（図示せず）に対応して形成
されている。金属基板１自体の構造は第１図およ
び第２図に示したと全く同様である。 FIG. 4 is a sectional view showing an example of the lighting device used as a vehicular lamp. In the figure, 21 is a back cover, 22 is a front lens, 2
3 is an inner lens, and 24 is a heat radiation hole. A large number of fisheye condensing lenses 25 are formed on the surface of the inner lens 23, corresponding to each light emitting element (not shown). The structure of the metal substrate 1 itself is exactly the same as shown in FIGS. 1 and 2.
かくして、このような構成からなる照明装置に
よれば、金属基板１の良導体としての材質的特性
をそのまま利用し、発光素子２と該基板１とを導
通させ、この基板１に電流を流すようにしている
ので、第９図に示した従来装置と異なり素子収納
凹部３内に絶縁層４と導電層とを積層形成する必
要がなく、照明装置の製作が簡単かつ容易であ
る。また、発光素子５と金属基板１との導通も確
実である。 Thus, according to the lighting device having such a configuration, the material properties of the metal substrate 1 as a good conductor are utilized as they are, and the light emitting element 2 and the substrate 1 are brought into conduction, so that a current is caused to flow through the substrate 1. Therefore, unlike the conventional device shown in FIG. 9, there is no need to laminate the insulating layer 4 and the conductive layer in the element housing recess 3, and the manufacturing of the lighting device is simple and easy. Furthermore, electrical conduction between the light emitting element 5 and the metal substrate 1 is also ensured.
第５図は本発明の他の実施例を示す要部斜視
図、第６図はその電気回路を示す図である。この
実施例は第１図および第２図に示した金属基板１
を放熱器３０の表面に絶縁層３１を介して複数個
並列配置し、これらの金属基板１をリード線３２
によつて直列に、また一部を並列に接続したもの
である。この場合、各金属基板１はあらかじめ発
光素子２が実装されることによりユニツト化され
ている。放熱器３０はアルミニウム等からなり、
その裏面には放熱効果を増大させるため複数の溝
３４が形成されている。 FIG. 5 is a perspective view of essential parts showing another embodiment of the present invention, and FIG. 6 is a diagram showing its electric circuit. This embodiment is based on the metal substrate 1 shown in FIGS. 1 and 2.
are arranged in parallel on the surface of the heatsink 30 with an insulating layer 31 in between, and these metal substrates 1 are connected to the lead wires 32.
Some parts are connected in series, and some parts are connected in parallel. In this case, each metal substrate 1 is made into a unit by mounting a light emitting element 2 in advance. The heat sink 30 is made of aluminum or the like,
A plurality of grooves 34 are formed on the back surface to increase the heat dissipation effect.
このような構成においてはある１つの発光素子
２が故障した時、そのユニツトだけ交換すればよ
いので、メインテナンスが簡単である。 In such a configuration, when one light emitting element 2 breaks down, only that unit needs to be replaced, so maintenance is easy.
第７図は本発明を車輌用灯具に適用した場合の
他の実施例を示す断面図である。なお、図中第４
図および第５図と同一構成部品に対しては同一符
号を以つ示す。放熱器３０の表面にはユニツト化
された３つの金属基板１Ａ，１Ｂ，１Ｃが配設さ
れている。放熱器３０の表面は段状に形成される
ことにより、上２つの金属基板１Ｂ，１Ｃがその
板厚分だけ前後にずれた状態で載置される２つの
棚部４１，４２を有している。最下段の金属基板
１Ａは灯具ボデイ２１の内底面上に前記放熱器３
０の下端部表面に沿つて立てられ、その上端部が
２段目の金属基板１Ｂの下端部と重なり合い、か
つコネクタ４４によつて互いに電気的に接続され
ている。コネクタ４４は金属基板１Ａの背面に形
成された嵌合凹部４４ａと、金属基板１Ｂの表面
に突設された前記嵌合凹部４４ａに嵌合する金属
製のピン４４ｂとで構成されている。なお、２段
目の金属基板１Ｂと三段目の金属基板１Ｃも同様
のコネクタによつて電気的に接続されている。ま
た、金属基板１Ａ，１Ｂ，１Ｃをその板厚方向に
ずらして配設した理由は、前面レンズ２２から各
発光素子までの距離をほぼ等しくし、前面レンズ
２２の表面全体を均一に照明するためである。 FIG. 7 is a sectional view showing another embodiment in which the present invention is applied to a vehicle lamp. In addition, No. 4 in the figure
Components that are the same as those in the figures and FIG. 5 are designated by the same reference numerals. On the surface of the heat sink 30, three unitized metal substrates 1A, 1B, and 1C are arranged. The surface of the radiator 30 is formed in a step-like manner, so that it has two shelf parts 41 and 42 on which the upper two metal substrates 1B and 1C are placed, shifted back and forth by the thickness of the metal substrates. There is. The lowermost metal substrate 1A has the heat sink 3 on the inner bottom surface of the lamp body 21.
0, its upper end overlaps the lower end of the second stage metal substrate 1B, and is electrically connected to each other by a connector 44. The connector 44 includes a fitting recess 44a formed on the back surface of the metal substrate 1A, and a metal pin 44b that fits into the fitting recess 44a protruding from the surface of the metal substrate 1B. Note that the second-stage metal substrate 1B and the third-stage metal substrate 1C are also electrically connected by similar connectors. Furthermore, the reason why the metal substrates 1A, 1B, and 1C are shifted in the thickness direction is to make the distance from the front lens 22 to each light emitting element approximately equal, and to uniformly illuminate the entire surface of the front lens 22. It is.
このような構成からなる灯具においてもユニツ
ト化された金属基板１Ａ，１Ｂ，１Ｃの交換が容
易であることは明らかであろう。 It is obvious that even in a lamp having such a configuration, the unitized metal substrates 1A, 1B, and 1C can be easily replaced.
第８図は本発明の更に他の実施例を示す要部断
面図である。本実施例は各金属基板１Ａ，１Ｂの
表裏面に絶縁層としてのフレキシブルプリント基
板４を接着し、両基板１Ａ，１Ｂを導電層１０′
によつて電気的に接続したものである。導電層１
０′は右側の金属基板１Ｂの表面および一側面に
かけてフレキシブルプリント基板４上に形成され
ている。一方、金属基板１Ａの金属基板１Ｂと対
向する側面はフレキシブルプリント基板４が接着
されておらずむき出しで、前記導電層１０′に接
触している。各基板１Ａ，１Ｂの導電層１０′と
発光素子２とはリード線７によつて電気的に接続
されている。したがつて、金属基板１Ａ，１Ｂと
発光素子２Ａ，２Ｂは、導電層１０′およびリー
ド線７を介して直列接続されている。 FIG. 8 is a sectional view of a main part showing still another embodiment of the present invention. In this embodiment, a flexible printed circuit board 4 as an insulating layer is bonded to the front and back surfaces of each metal substrate 1A, 1B, and both substrates 1A, 1B are covered with a conductive layer 10'.
It is electrically connected by. Conductive layer 1
0' is formed on the flexible printed circuit board 4 over the surface and one side of the metal substrate 1B on the right side. On the other hand, the flexible printed circuit board 4 is not bonded to the side surface of the metal substrate 1A facing the metal substrate 1B, and is exposed and in contact with the conductive layer 10'. The conductive layer 10' of each substrate 1A, 1B and the light emitting element 2 are electrically connected by a lead wire 7. Therefore, the metal substrates 1A, 1B and the light emitting elements 2A, 2B are connected in series via the conductive layer 10' and the lead wire 7.
なお、金属基板１Ａ，１Ｂの接続において本実
施は導電層１０′を使用したが、適宜なソケツト
で接続してもよいことは勿論である。 Although the conductive layer 10' was used in this embodiment to connect the metal substrates 1A and 1B, it goes without saying that they may be connected using an appropriate socket.
以上説明したように本発明に係る照明装置によ
れば、金属基板と発光素子との電気的接続が確実
にして、素子収納凹部に絶縁層と導電箔を積層形
成する必要がなく、製作が容易で安価に提供する
ことができる。
As explained above, according to the lighting device according to the present invention, the electrical connection between the metal substrate and the light emitting element is ensured, there is no need to laminate an insulating layer and conductive foil in the element housing recess, and manufacturing is easy. can be provided at low cost.
第１図は本発明に係る照明装置の基本的構成を
示す断面図、第２図は同装置の要部斜視図、第３
図は電気回路図、第４図は本発明を車輌用灯具に
適用した場合の実施例を示す断面図、第５図は本
発明の他の実施例を示す要部斜視図、第６図はそ
の電気回路図、第７図は本発明を車輌用灯具に適
用した場合の他の実施例を示す断面図、第８図は
本発明の他の実施例を示す断面図、第９図は従来
の照明装置を示す要部断面図、第１０図は従来装
置の電気回路図である。
１……金属基板、２，２ａ……発光素子、３…
…素子収納凹部、４……絶縁層、５……共通導電
層、６……導電層、７……金線（ワイヤ）、１０
……導電層、１５……電源、Ｒ……点灯用抵抗
体。
FIG. 1 is a sectional view showing the basic configuration of the lighting device according to the present invention, FIG. 2 is a perspective view of the main part of the device, and FIG.
The figure is an electric circuit diagram, FIG. 4 is a sectional view showing an embodiment in which the present invention is applied to a vehicle lamp, FIG. 5 is a perspective view of main parts showing another embodiment of the present invention, and FIG. 6 is a The electric circuit diagram thereof, FIG. 7 is a sectional view showing another embodiment in which the present invention is applied to a vehicle lamp, FIG. 8 is a sectional view showing another embodiment of the present invention, and FIG. 9 is a conventional one. FIG. 10 is a sectional view of a main part of the lighting device shown in FIG. 1, and FIG. 10 is an electric circuit diagram of the conventional device. 1... Metal substrate, 2, 2a... Light emitting element, 3...
...Element housing recess, 4...Insulating layer, 5...Common conductive layer, 6...Conductive layer, 7...Gold wire (wire), 10
...Conductive layer, 15...Power source, R...Resistor for lighting.
Claims (1)
て、良導体からなる金属基板の表面に多数の素子
収納凹部を形成し、それ以外の表面を絶縁層にて
被覆し、前記各素子収納凹部に前記発光素子をそ
れぞれ配設して前記金属基板と電気的に導通さ
せ、前記絶縁層の表面に前記発光素子に対応して
帯状の共通導電層を形成し、各発光ダイオードと
共通導電層をリード線によつて電気的に接続し、
かつ前記金属基板と前記共通導電層とを電源に接
続したことを特徴とする照明装置。1. In a lighting device using a large number of light emitting elements as a light source, a large number of element housing recesses are formed on the surface of a metal substrate made of a good conductor, the other surface is covered with an insulating layer, and the light emitting element is placed in each of the element housing recesses. The elements are respectively disposed and electrically connected to the metal substrate, a strip-shaped common conductive layer is formed on the surface of the insulating layer corresponding to the light emitting elements, and each light emitting diode and the common conductive layer are connected to a lead wire. Then electrically connect,
A lighting device characterized in that the metal substrate and the common conductive layer are connected to a power source.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61038177A JPS62196878A (en) | 1986-02-25 | 1986-02-25 | Illumination system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61038177A JPS62196878A (en) | 1986-02-25 | 1986-02-25 | Illumination system |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62196878A JPS62196878A (en) | 1987-08-31 |
| JPH0447468B2 true JPH0447468B2 (en) | 1992-08-04 |
Family
ID=12518105
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61038177A Granted JPS62196878A (en) | 1986-02-25 | 1986-02-25 | Illumination system |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62196878A (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH036850U (en) * | 1989-06-05 | 1991-01-23 | ||
| JP2668140B2 (en) * | 1989-09-30 | 1997-10-27 | 三菱電線工業株式会社 | Light emitting module |
| JP2503074Y2 (en) * | 1991-03-14 | 1996-06-26 | 株式会社小糸製作所 | Mounting structure of chip type light emitting diode |
| JP2000349348A (en) * | 1999-03-31 | 2000-12-15 | Toyoda Gosei Co Ltd | Short wavelength led lamp unit |
| DE19918370B4 (en) | 1999-04-22 | 2006-06-08 | Osram Opto Semiconductors Gmbh | LED white light source with lens |
| GB2361581A (en) * | 2000-04-20 | 2001-10-24 | Lite On Electronics Inc | A light emitting diode device |
| DE10129785B4 (en) * | 2001-06-20 | 2010-03-18 | Osram Opto Semiconductors Gmbh | Optoelectronic component and method for its production |
| AUPR598201A0 (en) * | 2001-06-28 | 2001-07-19 | Showers International Pty Ltd | Light assembly for solid state light devices |
| JP2004265986A (en) | 2003-02-28 | 2004-09-24 | Citizen Electronics Co Ltd | High luminance light emitting element, and method for manufacturing the same and light emitting device using the same |
| US7095053B2 (en) * | 2003-05-05 | 2006-08-22 | Lamina Ceramics, Inc. | Light emitting diodes packaged for high temperature operation |
| JP2006019598A (en) * | 2004-07-05 | 2006-01-19 | Citizen Electronics Co Ltd | Light emitting diode |
| JP4706206B2 (en) * | 2004-08-18 | 2011-06-22 | ソニー株式会社 | Heat dissipation device and display device |
| US7303315B2 (en) * | 2004-11-05 | 2007-12-04 | 3M Innovative Properties Company | Illumination assembly using circuitized strips |
| FR2878401B1 (en) * | 2004-11-22 | 2007-01-19 | Valeo Vision Sa | METHOD FOR MANUFACTURING SUPPORT OF INTERCONNECTED LIGHT EMITTING DIODES IN A THREE DIMENSIONAL ENVIRONMENT |
| FR2885990B1 (en) * | 2005-05-23 | 2007-07-13 | Valeo Vision Sa | LIGHT - EMITTING DIODE LIGHTING AND / OR SIGNALING DEVICE FOR MOTOR VEHICLE. |
| KR100616695B1 (en) * | 2005-10-04 | 2006-08-28 | 삼성전기주식회사 | High power light emitting diode package |
| JP4551336B2 (en) * | 2006-01-27 | 2010-09-29 | 小島プレス工業株式会社 | Vehicle map light |
| KR100789951B1 (en) * | 2006-06-09 | 2008-01-03 | 엘지전자 주식회사 | Apparatus and method for manufacturing Light Emitting Unit |
| TW200824142A (en) * | 2006-11-22 | 2008-06-01 | Lighthouse Technology Co Ltd | High power diode holder and thereof package is described |
| JP4990740B2 (en) * | 2007-11-13 | 2012-08-01 | 株式会社フジクラ | Semiconductor device mounting submount and optical transceiver module |
| JP2010010298A (en) * | 2008-06-25 | 2010-01-14 | Mitsui Mining & Smelting Co Ltd | Flexible printed wiring base material and semiconductor apparatus |
| JP5545848B2 (en) | 2010-06-24 | 2014-07-09 | シチズン電子株式会社 | Semiconductor light emitting device |
| TWI414050B (en) * | 2010-10-19 | 2013-11-01 | Unistars | Package board and manufacturing method thereof |
| US8888331B2 (en) * | 2011-05-09 | 2014-11-18 | Microsoft Corporation | Low inductance light source module |
| JP2016195177A (en) * | 2015-03-31 | 2016-11-17 | Ｈｏｙａ Ｃａｎｄｅｏ Ｏｐｔｒｏｎｉｃｓ株式会社 | Light irradiation module |
| JP2015149515A (en) * | 2015-05-28 | 2015-08-20 | シャープ株式会社 | Light-emitting device and illumination apparatus |
-
1986
- 1986-02-25 JP JP61038177A patent/JPS62196878A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62196878A (en) | 1987-08-31 |
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