JP2013045656A - Semiconductor type light source of vehicular lamp, semiconductor type light source unit of the vehicular lamp, vehicular lamp - Google Patents

Abstract

PROBLEM TO BE SOLVED: To make a volume of a sealing member as small as possible.SOLUTION: The semiconductor type light source is provided with a substrate 3, semiconductor light emitting elements 40-44, a control unit, a wiring element, a surrounding wall member 18, and a sealing member 180. A shape of an inner circumferential face of the surrounding wall member 18 is a shape based on a reference ellipse A. As a result, a volume of the sealing member 180 can be smaller as compared with a shape of the inner circumferential face of the surrounding wall member 18 having a rectangular shape or a circular shape, and, thereby, a stress of the sealing member 180 can be suppressed as compared with the surrounding wall member 18 having a rectangular inner circumferential face.

Description

  The present invention relates to a semiconductor-type light source for a vehicular lamp. The present invention also relates to a semiconductor-type light source unit for a vehicle lamp. Furthermore, the present invention relates to a vehicular lamp using a semiconductor-type light source or a semiconductor-type light source unit as a light source.

  This type of semiconductor-type light source has been conventionally used (for example, Patent Document 1 and Patent Document 2). Hereinafter, a conventional semiconductor light source will be described. The semiconductor-type light source disclosed in Patent Document 1 is formed by mounting a plurality of LED chips on a substrate and covering the plurality of LED chips with a resin, that is, a sealing member. The semiconductor-type light source disclosed in Patent Document 2 is formed by providing a plurality of LED chips on a base portion and sealing the plurality of LED chips with a resin mold portion, that is, a sealing member.

JP 2007-176219 A JP 2009-21264 A

  The mounting arrangement of the LED chip of such a semiconductor light source is relatively φ5 similar to the case where a plurality of LED chips are mounted in a row in order to obtain a horizontally long flat light distribution depending on the shape of the vehicle lamp. In some cases, a plurality of LED chips are densely mounted in a narrow region in order to obtain light emission of a point light source of about ~ 20. When LED chips mounted relatively close to a specific area on a substrate are sealed together, the capacity of the sealing member is determined by the thermal expansion or contraction of the sealing member due to the lighting / extinction of the LED or the temperature change of the usage environment. It is necessary to reduce the capacity as much as possible in order to alleviate stress caused by doing so.

  The problem to be solved by the present invention is to make the capacity of the sealing member as small as possible.

  The present invention (invention according to claim 1) includes a substrate having a mounting surface, a plurality of semiconductor light emitting elements mounted in a line on the mounting surface of the substrate, a control element for controlling light emission of the semiconductor light emitting elements, A wiring element that feeds power to the semiconductor light emitting element via the control element, an annular surrounding wall member that surrounds all of the plurality of semiconductor light emitting elements, and a plurality of in the recesses formed in the mounting surface of the substrate and the surrounding wall member A light-transmitting sealing member for sealing the semiconductor light emitting elements, and the shape of the inner peripheral surface of the surrounding wall member is an ellipse or an ellipse whose major axis is the column direction of the plurality of semiconductor light emitting elements It is the shape based on.

1st Embodiment of the semiconductor-type light source of the vehicle lamp concerning this invention, 1st Embodiment of the semiconductor-type light source unit of the vehicle lamp concerning this invention, and 1st of the vehicle lamp concerning this invention BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a longitudinal sectional view, that is, a vertical sectional view showing a state in which a semiconductor light source unit is assembled to a vehicle lamp. It is a top view which shows the semiconductor type light source unit of the state which assembled | attached the light source part (semiconductor type light source) and the socket part. It is a disassembled perspective view of the light source part of a semiconductor type light source unit, the insulating member of a socket part, a heat radiating member, and a power feeding member. It is a disassembled perspective view of the light source part and socket part of a semiconductor type light source unit. It is a perspective view which shows the semiconductor type light source unit of the state which assembled | attached the light source part and the socket part. It is an enlarged plan view showing an enclosing wall member, a plurality of semiconductor light emitting elements, a plurality of wire pads, and a plurality of bonding wires. It is an enlarged plan view which shows an surrounding wall member. It is a VIII-VIII line arrow directional view in FIG. It is the IX-IX sectional view taken on the line in FIG. It is an enlarged plan explanatory view showing a reference ellipse. It is an enlarged plan explanatory view showing the shape of the inner peripheral surface of the surrounding wall member in which the curves at both ends of the reference ellipse are displaced inward.

  DESCRIPTION OF EMBODIMENTS Embodiments of a semiconductor light source for a vehicle lamp according to the present invention (embodiments), embodiments of a semiconductor light source unit of a vehicle lamp according to the present invention, and an embodiment of a vehicle lamp according to the present invention will be described below. A form is demonstrated in detail based on drawing. In addition, this invention is not limited by this embodiment.

(Description of Configuration of First Embodiment)
The configuration of the semiconductor light source of the vehicle lamp in the first embodiment, the semiconductor light source unit of the vehicle lamp in the first embodiment, and the configuration of the vehicle lamp in the first embodiment will be described below. In FIG. 1, reference numeral 100 denotes a vehicular lamp in the first embodiment.

(Description of vehicle lamp 100)
The vehicle lamp 100 is a one-lamp tail / stop lamp in this example. That is, the vehicular lamp 100 uses a tail lamp function and a stop lamp function in combination with one lamp, that is, one lamp and one lamp. The vehicle lamps 100 are respectively provided on the left and right of the rear part of a vehicle (not shown). The vehicle lamp 100 may be combined with other lamp functions (not shown) such as a backup lamp function and a turn signal lamp function to constitute a rear combination lamp.

  As shown in FIG. 1, the vehicular lamp 100 includes a lamp housing 101, a lamp lens 102, and a reflector 103, and a semiconductor-type light source (hereinafter referred to as a “light source unit 10”) of the vehicular lamp according to the first embodiment. ) As a light source, and the semiconductor-type light source unit 1 of the vehicular lamp in the first embodiment.

  The lamp housing 101 is made of, for example, a light impermeable member, for example, a resin member. The lamp housing 101 has a hollow shape in which one side is open and the other side is closed. A through hole 104 is provided in the closed portion of the lamp housing 101. The through hole 104 has a circular shape. A plurality of concave portions (not shown) and a plurality of stopper portions (not shown) are provided at substantially equal intervals on the edge of the through hole 104.

  The lamp lens 102 is made of, for example, a light transmissive member such as a transparent resin member or a glass member. The lamp lens 102 has a hollow shape in which one side is open and the other side is closed. The periphery of the opening of the lamp lens 102 and the periphery of the opening of the lamp housing 101 are fixed in a watertight manner. A lamp chamber 105 is defined by the lamp housing 101 and the lamp lens 102.

  The reflector 103 is a light distribution control unit that performs light distribution control so that the light emitted from the semiconductor light source unit 1 is collected at a focal point F (see FIG. 2). The reflector 103 is disposed in the lamp chamber 105 and is fixed to the lamp housing 101 or the like. The reflector 103 is made of, for example, a light impermeable member, such as a resin member or a metal member. The reflector 103 has a hollow shape in which one side is open and the other side is closed. A through hole 106 is provided in the closed portion of the reflector 103 so as to communicate with the through hole 104 of the lamp housing 101. A reflective surface 107 is provided on the inner surface of the reflector 103. The reflector 103 is made of a separate member from the lamp housing 101, but may be a reflector integrated with the lamp housing. In this case, a reflecting surface is provided on a part of the lamp housing to provide a reflector function.

(Description of the semiconductor light source unit 1)
As shown in FIGS. 1 to 5, the semiconductor-type light source unit 1 includes the light source unit 10, a socket unit 11, and a cover unit 12 as an optical component. The light source unit 10 is attached to one end (upper end) of the socket unit 11. The cover portion 12 is fixedly or detachably attached to one end portion of the socket portion 11. The light source unit 10 is covered by the cover unit 12. The cover portion 12 may have a function of sandwiching the reflector 103.

  As shown in FIG. 1, the semiconductor light source unit 1 is mounted on the vehicular lamp 100. That is, the socket part 11 is detachably attached to the lamp housing 101 via a packing (O-ring) 108. The light source unit 10 and the cover unit 12 are arranged in the lamp chamber 105 through the through hole 104 of the lamp housing 101 and the through hole 106 of the reflector 103 and on the reflecting surface 107 side of the reflector 103. Has been.

(Description of the light source unit 10)
As shown in FIGS. 2 to 6, 10, and 11, the light source unit 10 includes a substrate 3 and a plurality of semiconductor light emitting elements (LED chips) 40, 41, 42, 43, 44 in this example. (Hereinafter may be described as “40 to 44”), a resistance (not shown) and a diode (not shown) as a control element, a wiring pattern (not shown) as a wiring element, and a bonding wire 60, 61, 62, 63, 64 (hereinafter may be described as “60 to 64”) and conductive adhesive 600, 610, 620, 630, 640 (hereinafter referred to as “600 to 640”) And mounting pads 601, 611, 621, 631, 641 (hereinafter sometimes referred to as “601 to 641”) and wire pads 602, 612, 622, 632, 642 (hereinafter referred to as “ And may be referred to as 602-642 '), and the surrounding wall member 18, but with the sealing member 180, a.

(Description of socket part 11)
As shown in FIGS. 1 to 5, the socket portion 11 includes an insulating member 7, a heat radiating member 8, and three power feeding members 91, 92, and 93. The heat radiating member 8 having thermal conductivity and conductivity and the power feeding members 91 to 93 having conductivity are integrally incorporated in the insulating member 7 having insulation properties in an insulated state.

  The socket portion 11 has an integral structure of the insulating member 7, the heat radiating member 8, and the power feeding members 91 to 93. For example, the insulating member 7, the heat radiating member 8, and the power feeding members 91 to 93 are integrally formed by insert molding (integral molding). Or the said insulating member 7 and the said electric power feeding members 91-93 are comprised integrally by insert molding, and the said heat radiation member 8 is integrally attached to the said insulating member 7 and the said electric power feeding members 91-93 of an integral structure. is there. Alternatively, the power feeding members 91 to 93 are integrally assembled to the insulating member 7, and the heat radiating member 8 is integrally attached to the integrally assembled insulating member 7 and the power feeding members 91 to 93.

(Description of assembly structure of semiconductor light source unit 1)
As shown in FIGS. 1 to 5, the semiconductor light source unit 1 includes a surface of the heat radiating member 8 of the socket portion 11 in which the insulating member 7, the heat radiating member 8, and the power feeding members 91 to 93 are integrally molded. The contact surface 80 of the light source unit 10 and the contact surface 35 of the back surface of the substrate 3 on which the semiconductor light emitting elements 40 to 44 of the light source unit 10 are mounted and sealed are disposed in close contact with each other. At the same time, the power supply members 91 to 93 of the socket portion 11 and the wiring pattern of the substrate 3 are connected to the heat dissipation member 8 and the contact surface 80 via the connection member 17. While being in close contact with the surface 35, it is firmly electrically connected. That is, one end portion of the power supply members 91 to 93 protruding from the surface side of the heat radiating member 8 of the socket portion 11 is inserted into the cutout hole of the connection member 17, and one end portion of the power supply members 91 to 93 is inserted. And the connecting member 17 are electrically and mechanically connected by elastic contact, caulking, welding, or the like. On the other hand, the connecting member 17 is mechanically connected to the substrate 3 by fitting or the like, and electrically connected to the wiring pattern of the substrate 3 by solder or a conductive adhesive. The connection member 17 maintains a close state between the back surface of the substrate 3 and the surface of the heat dissipation member 8. As a result, the semiconductor light source unit 1 is excellent in heat dissipation performance. Further, the electrical connection state between the power feeding members 91 to 93 of the socket portion 11 and the wiring pattern of the substrate 3 is maintained. As a result, the electrical circuit connection state is strengthened.

(Description of substrate 3)
In this example, the substrate 3 is made of ceramic. As shown in FIGS. 2 to 5, the substrate 3 has a substantially octagonal plate shape when viewed from the top, that is, from above. Insertion holes 31, 32, and 33 through which the power supply members 91, 92, and 93 of the socket portion 11 are inserted are respectively provided in the approximate centers of the right side, the left side, and the lower side of the three sides of the substrate 3. A flat mounting surface 34 is provided on the upper surface of one surface of the substrate 3. A flat contact surface 35 is provided on the lower surface of the other surface of the substrate 3. A highly reflective surface 30 such as highly reflective paint or highly reflective vapor deposition may be further provided on the mounting surface 34 of the ceramic substrate 3 that is a highly reflective member.

  The five semiconductor light emitting elements 40 to 44, the control element and the wiring element, 60 to 64, 601 to 641, 602 to 642 and the surrounding wall member 18 are mounted on the mounting surface 34 of the substrate 3. ing.

(Description of the semiconductor light emitting elements 40 to 44)
The semiconductor-type light source composed of the five semiconductor light-emitting elements 40 to 44 uses a self-luminous semiconductor-type light source such as an LED or an EL (organic EL), and in this first embodiment, an LED is used. As shown in FIGS. 2 to 6, the semiconductor light emitting elements 40 to 44 are semiconductors having a small rectangular shape, that is, a square or a rectangular shape when viewed from a plane, that is, from a direction perpendicular to the mounting surface 34 of the substrate 3. It consists of a chip (light source chip), and in this example, it consists of a bare chip. The five semiconductor light emitting elements 40 to 44 emit light from one front surface and four side surfaces other than the surface mounted on the substrate 3. As shown in FIG. 2, the five semiconductor light emitting elements 40 to 44 are the focal point F of the reflector 103 of the optical system and the center of the socket portion 11 of the semiconductor light source unit 1 and the mounting rotation center. In the vicinity of O, they are arranged in a line on a straight line XX with gaps at almost equal intervals.

  The five semiconductor light emitting devices 40 to 44 are semiconductor light emitting devices to which a small current is supplied, and one semiconductor light emitting device 40 that is a light source of a tail lamp, that is, a first group of semiconductor light emitting devices 40, and a large current. That is, a semiconductor light emitting device that is supplied with a large current compared to the current supplied to the semiconductor light emitting device 40, and is the four semiconductor light emitting devices 41 to 44 that are the light sources of the stop lamp, that is, the second group of light emitting devices. It is divided into semiconductor light emitting elements 41 to 44. One semiconductor light emitting element 40 of the tail lamp light source of the tail lamp function includes two semiconductor light emitting elements 41 and 42 of the stop lamp light source of the right stop lamp function and a light source of the stop lamp of the left stop lamp function. The two semiconductor light emitting elements 43 and 44 are arranged in a state of being sandwiched between them. That is, one semiconductor light emitting element 40 having the tail lamp function is positioned in the middle of the five semiconductor light emitting elements 40 to 44. The four semiconductor light emitting elements 41 to 44 having the stop lamp function are connected in series in the forward direction, that is, the direction in which current flows.

  Of the five semiconductor light emitting devices 40 to 44, one semiconductor light emitting device 40 having the tail lamp function is disposed at the center O of the substrate 3 and at or near the center O of the heat dissipation member 8. . That is, the center of one semiconductor light emitting element 40 having the tail lamp function and the center O of the substrate 3 and the center O of the heat radiating member 8 coincide with or substantially coincide with each other. Among the five semiconductor light emitting elements 40 to 44, the four semiconductor light emitting elements 41 to 44 having the stop lamp function are arranged on a straight line XX in a line, so that a light source bulb, a light bulb filament or Light emission similar to light emission by arc discharge of a discharge bulb or HID lamp can be obtained.

(Description of control element)
The resistor and the diode are mounted on the substrate 3 and are electrically connected between the power feeding members 91 to 93 of the socket portion 11 and the five semiconductor light emitting elements 40 to 44 via the wiring elements. It is connected to the. The resistor and the diode are elements that control current supplied to the five semiconductor light emitting elements 40 to 44.

(Description of wiring elements, 60 to 64, 601 to 641, 602 to 642)
As shown in FIGS. 6, 10, and 11, the wiring element includes a wiring pattern, five bonding wires 60 to 64, five mounting pads first pads 601 to 641, and five wire pads. The second pads 602 to 642. The wiring elements 60 to 64, 601 to 641, and 602 to 642 are electrically connected to the power feeding members 91, 92, and 93 of the socket portion 11 via the connection member 17, and are connected via the control element. Power is supplied to the five semiconductor light emitting elements 40 to 44.

  The wiring pattern is made of, for example, a thin film wiring or a thick film wiring of a conductive member. The resistor and the diode are connected to the wiring pattern. The wiring patterns are provided with the mounting pads 601 to 641 and the wire pads 602 to 642, respectively. Of the wiring patterns, the areas of the wiring patterns that supply a large current to the semiconductor light emitting elements 41 to 44 having the stop lamp function are substantially equal. Thereby, the heat generated in the wiring pattern can be released almost uniformly to the external heat radiating member 8 through the substrate 3.

  As shown in FIGS. 10 and 11, the mounting pads 601 to 641 have the same number as the five semiconductor light emitting elements 40 to 44, with substantially equal gaps on the straight line XX. In the example, five are arranged. The five semiconductor light emitting elements 40 to 44 are bonded to the five mounting pads 601 to 641 through conductive adhesives 600 to 640 such as silver paste, respectively.

  The mounting pads 601 to 641 form a small square or rectangular shape as viewed from the plane, that is, from the top, and from the direction perpendicular to the mounting surface 34 of the substrate 3. The conductive adhesives 600 to 640 have a minute circular shape when seen from the plane.

  The diameter of the circular conductive adhesives 600 to 640 is larger than the length of one side of the square semiconductor light emitting elements 40 to 44. One side of the square mounting pads 601 to 641 is larger than the diameter of the circular conductive adhesives 600 to 640. When the five semiconductor light emitting elements 40 to 44 are arranged on the straight line XX with substantially equal gaps, the mounting pads 611 and 641 of the semiconductor light emitting elements 41 and 44 at both ends are arranged. The maximum dimension between the outer sides is 6.925 mm.

  As shown in FIGS. 10 and 11, the wire pads 602 to 642 are arranged in a row direction of the five semiconductor light emitting elements 40 to 44, that is, a direction intersecting the straight line XX direction, that is, the straight line XX. The five semiconductor light emitting elements 40 to 44 are arranged in a straight line Y-Y direction orthogonal to the two semiconductor light emitting elements 41 and 44 outside the five semiconductor light emitting elements 40 to 44. The same number, five in this example, are provided. The five wire pads 602 to 642 are located on an intermediate line between the two adjacent semiconductor light emitting elements 40 to 44 and at a position equidistant from the semiconductor light emitting elements 40 to 44.

  Further, among the five semiconductor light emitting elements 40 to 44, the wire pad 602 for the one semiconductor light emitting element 40 having the tail lamp function located in the middle is, as shown in FIG. Among the light emitting elements 40 to 44, the wire pads 612 and 622 for the two semiconductor light emitting elements 41 and 42 having the stop lamp function on the right side, and the left side of the five semiconductor light emitting elements 40 to 44. The two semiconductor light emitting elements 43 and 44 having a stop lamp function are arranged in a state of being sandwiched between the wire pads 632 and 642 for the semiconductor light emitting elements 43 and 44. In FIG. 6, the wire pad 602 for the semiconductor light emitting device 40 having the tail lamp function is disposed at one place indicated by a solid line. However, as shown in FIG. 10, the wire pad 602 for the semiconductor light emitting device 40 having the tail lamp function is not limited to one place indicated by a solid line, but is arbitrarily selected from three places indicated by a two-dot chain line. It may be arranged at one place.

(Description of the surrounding wall member 18)
The surrounding wall member 18 is made of an insulating member such as a resin, in this example, a resin having elasticity that can follow the expansion and contraction of the sealing member 180, such as a thermoplastic elastomer or an olefinic TPO resin. It is configured. As shown in FIGS. 2 to 6, the surrounding wall member 18 includes all of the five semiconductor light emitting elements 40 to 44, a part of the wiring element, that is, a part of the wiring pattern and the five pieces of the wiring element. The bonding wires 60 to 64 and the five mounting pads 601 to 641 and the five wire pads 602 to 642 are surrounded by a ring shape. That is, the surrounding wall member 18 has an annular shape in which the central portion is the hollow portion 181 and the surrounding portion is the wall portion 182.

  Although not particularly illustrated, the surrounding wall member 18 has a height sufficiently higher than the heights of the semiconductor light emitting elements 40 to 44 and the bonding wires 60 to 64 of the wiring elements. The surrounding wall member 18 is a member that regulates the capacity of filling the sealing member 180 to a small capacity.

  At least two fitting projections 185 for temporarily fixing and positioning, that is, positioning as fitting portions, are provided on the lower end surface of the one end surface of the wall portion 182 of the surrounding wall member 18 on the inner wall surface of the wall portion 182. It is integrally provided on a diagonal line passing through the center of the ring shape drawn by the bottom. On the other hand, the substrate 3 is provided with at least two fitting holes (not shown) for temporary fixing and positioning as fitting portions corresponding to the fitting convex portions 185. By fitting the fitting protrusion 185 and the fitting hole to each other, the surrounding wall member 18 and the substrate 3 are fixed and positioned to each other. The fitting hole may be a fitting recess into which the fitting projection 185 is fitted. By providing a slight clearance between the outer shape of the fitting convex portion 185 and the inner diameter of the fitting hole, it moves in accordance with the thermal expansion / shrinkage of the sealing member, and the mounted semiconductor light emitting elements 40 to 44 and bonding wires 60 to 64 are moved. Can reduce stress.

  The lower end surface of one end surface of the wall portion 182 of the surrounding wall member 18 that is temporarily fixed and positioned mutually with the substrate 3 by the fitting convex portion 185 and the fitting hole is the mounting of the substrate 3. The surface 34 is adhesively fixed or mounted with an adhesive (not shown). In this example, the adhesive has low elasticity in the high temperature environment region of the semiconductor light emitting elements 40 to 44 and absorbs expansion / contraction of the sealing member 180 and the surrounding wall member 18 in the high temperature environment region. For example, an epoxy resin or a silicone resin.

  It is in the hollow portion 181 of the surrounding wall member 18 mounted on the substrate 3, and is defined by the mounting surface 34 of the substrate 3 and the inner peripheral surface of the wall portion 182 of the surrounding wall member 18. In the space, the five semiconductor light emitting elements 40 to 44 and the five wire pads 602 to 642 are respectively mounted, and the five bonding wires 60 to 64 are respectively bonded. The sealing member 180 is filled.

  On the inner peripheral surface of the wall portion 182 of the surrounding wall member 18, light (not shown) emitted from the semiconductor light emitting elements 40 to 44, particularly the four side surfaces of the semiconductor light emitting elements 40 to 44, is predetermined. A reflecting surface 184 is provided that reflects in the direction, for example, in the same direction as the direction of light emitted from one front surface of the semiconductor light emitting elements 40 to 44. As shown in FIGS. 8 and 9, the reflecting surface 184 is inclined so as to widen from the lower end of the inner peripheral surface of the wall portion 182 to the upper end of the other end. The reflective surface 184 may be configured such that the entire surrounding wall member 18 is made of a highly reflective member, or, for example, titanium oxide is contained in the resin of the surrounding wall member 18 such as PBT, PPA, etc. Are formed white, or only the inner peripheral surface of the wall portion 182 of the surrounding wall member 18 is made of a highly reflective member.

(Description of shape of inner peripheral surface of wall portion 182 of surrounding wall member 18)
The shape of the inner peripheral surface of the wall portion 182 of the surrounding wall member 18 is the contour shape of the portion where the mounting surface 34 of the substrate 3 and the inner peripheral surface of the wall portion 182 of the surrounding wall member 18 are in contact with each other. That is, the contour shape has an angle formed by the inner peripheral surface and the bottom surface of the wall portion 182 of the surrounding wall member 18. As shown in FIGS. 6 and 7, the shape of the inner peripheral surface of the wall portion 182 of the surrounding wall member 18 is the five light emitting semiconductors as viewed in the direction perpendicular to the mounting surface 34 of the substrate 3. The shape is based on an ellipse whose major axis is the column direction XX of the elements 40 to 44.

  The reflective surface 184 on the inner peripheral surface of the wall portion 182 of the surrounding wall member 18 is inclined so as to extend from the lower end at one end to the upper end at the other end. Therefore, the contour shape of the angle formed by the inner peripheral surface and the upper surface of the wall portion 182 of the surrounding wall member 18, that is, the contour shape of the upper end of the inner peripheral surface of the wall portion 182 is based on an ellipse. The contour shape of the angle formed by the inner peripheral surface and the bottom surface of the wall portion 182 of the surrounding wall member 18, that is, a shape that is slightly larger than the lower end contour shape of the inner peripheral surface of the wall portion 182. is there. The inner peripheral surface of the wall portion 182 of the surrounding wall member 18 is not necessarily an inclined surface but may be a vertical surface. In this case, the lower end contour shape of the inner peripheral surface of the wall portion 182 and the upper end contour shape of the inner peripheral surface of the wall portion 182 are substantially the same.

  The shape of the outer peripheral surface of the wall portion 182 of the surrounding wall member 18 is one shape larger than the shape of the inner peripheral surface of the wall portion 182 as shown in FIGS. It is a shape based on an ellipse whose major axis is the column direction (XX) of the semiconductor light emitting elements 40 to 44. The thickness of the wall portion 182 of the surrounding wall member 18, that is, the thickness from the inner peripheral surface to the outer peripheral surface of the wall portion 182 is substantially uniform. That is, the shape and size of the cross section of the wall portion 182 of the surrounding wall member 18 are uniform or almost uniform. The cross section of the wall portion 182 is a surface cut along a plane orthogonal to the inner and outer peripheral surfaces of the wall portion 182.

  As shown in FIGS. 10 and 11, between the lower end of one end of the inner peripheral surface of the wall portion 182 of the surrounding wall member 18 and the wire pad 642 (612 to 632), A distance T1 that is such that the lower end of one end of the inner peripheral surface of the wall portion 182 and the wire pads 642 (612 to 632) do not contact each other, that is, 0.5 mm or more is provided. The wire pads 612 to 642 are wire pads for the four semiconductor light emitting elements 41 to 44 having the stop lamp function.

  As shown in FIGS. 10 and 11, one end (lower end) of the inner peripheral surface of the wall portion 182 of the surrounding wall member 18 and the conductive adhesive 640 (610) of the semiconductor light emitting element 44 (41). In the meantime, one end (lower end) of the inner peripheral surface of the wall portion 182 of the surrounding wall member 18 and the conductive adhesive 640 (610) of the semiconductor light emitting element 44 (41) are not in contact with each other. A distance T2 (0.5 mm or more) is provided. The semiconductor light emitting elements 41 and 44 are semiconductor light emitting elements at both left and right ends in the major axis direction XX of the ellipse among the four semiconductor light emitting elements 41 to 44 having the stop lamp function.

  Hereinafter, the shape of the inner peripheral surface of the wall portion 182 of the surrounding wall member 18 will be described in more detail. First, a reference ellipse A shown in FIG. 10 is set. The reference ellipse A is an ellipse at the lower end of one end of the inner peripheral surface of the wall portion 182 of the surrounding wall member 18. That is, the reference ellipse A is an ellipse in the contour shape of the angle formed by the inner peripheral surface and the bottom surface of the wall portion 182 of the surrounding wall member 18, that is, the lower end contour shape of the inner peripheral surface of the wall portion 182.

  The reference ellipse A has a major axis in the column direction XX of the five semiconductor light emitting elements 40 to 44 and a minor axis perpendicular to the major axis direction XX from the wire pads 612 to 642. In the direction Y-Y, a distance T1 that is such that the lower end of the inner peripheral surface of the wall portion 182 of the surrounding wall member 18 and the wire pads 642 (612 to 632) do not contact each other, that is, 0.5 mm or more apart. The ellipse passing through the point B and having the smallest area is set. As described above, the “reference ellipse” refers to the inner peripheral surface of the surrounding wall member in which the column direction of the plurality of semiconductor light emitting elements is the major axis direction and from the wiring element to the minor axis direction orthogonal to the major axis direction. And an ellipse that passes through a point separated by a distance that does not contact with each other and has the smallest area.

  Next, the shape of the inner peripheral surface of the wall portion 182 of the surrounding wall member 18 is set based on the reference ellipse A set as shown in FIG. The shape of the inner peripheral surface of the wall portion 182 of the surrounding wall member 18 is a shape based on the reference ellipse A. That is, the shape of the inner peripheral surface of the wall portion 182 of the surrounding wall member 18 is a curve R at both end portions in the major axis direction XX of the reference ellipse A, as shown in FIG. From the point B, the center of the reference ellipse A, that is, the curve opposite to the intersection of the long axis XX and the short axis YY, that is, the curve R shown by the two-dot chain line in FIG. The displacement curves R1 and R2 indicated by solid lines in FIG. The displacement curves R1 and R2 are formed in the wall portion 182 of the surrounding wall member 18 from the conductive adhesives 610 and 640 of the semiconductor light emitting elements 41 and 44 at both left and right ends in the major axis direction XX. It is a curve passing through a distance T2 that is such that the lower end of one end of the peripheral surface and the conductive adhesive 640 (610) of the semiconductor light emitting element 44 (41) do not contact each other, that is, a point C separated by 0.5 mm or more.

  As shown in FIG. 7, the displacement curves R1 and R2 connect the first displacement curve R1 at both left and right ends in the major axis direction XX, the first displacement curve R1, and the curve of the reference ellipse A. And a second displacement curve R2. The radius of curvature of the first displacement curve R1 is larger than the radius of curvature of the second displacement curve R2. As described above, the “shape based on the ellipse” is a curve at both ends in the major axis direction of the reference ellipse, which is equal to or more than a distance in which the inner peripheral surface of the surrounding wall member and the wiring element do not contact each other. The curve on the opposite side of the center of the reference ellipse from the distant point is displaced toward the center of the reference ellipse, so that the inner peripheral surface of the surrounding wall member and the semiconductor light emitting element extend from the semiconductor light emitting elements on the left and right ends in the major axis direction. The shape is a displacement curve that passes through points separated by a distance that is not in contact with each other.

(Description of sealing member 180)
The sealing member 180 is made of a light transmissive member, for example, a light transmissive epoxy resin or silicone resin. In this example, the sealing member 180 is made of an epoxy resin or a silicone resin having low elasticity in the high temperature environment region of the semiconductor light emitting elements 40 to 44, as in the case of the adhesive.

  The sealing member 180 includes the surrounding wall member 18 fitted to the substrate 3 after the semiconductor light emitting elements 40 to 44 are mounted on the substrate 3 and the bonding wires 60 to 64 are bonded. The hollow portion 181 of the concave portion formed by the above is filled. When the sealing member 180 is cured, all of the five semiconductor light emitting elements 40 to 44, a part of the wiring pattern, all of the bonding wires 60 to 64, all of the mounting pads 601 to 641, and the wire pad. All of 602 to 642 and the conductive adhesives 600 to 640 are sealed by the sealing member 180.

  The sealing member 180 includes all of the five semiconductor light emitting elements 40 to 44, a part of the wiring pattern, all of the bonding wires 60 to 64, all of the mounting pads 601 to 641, and all of the wire pads 602 to 642. In addition, the conductive adhesives 600 to 640 are protected from the influence from the outside, for example, contact with other materials and adhesion of dust, and protection from ultraviolet rays, sulfurized gas, NOx and water. is there. That is, the sealing member 180 protects the five semiconductor light emitting elements 40 to 44 from disturbance.

(Description of insulating member 7)
The insulating member 7 is provided with an attachment portion for attaching the semiconductor light source unit 1 to the vehicular lamp 100 detachably or fixedly. The insulating member 7 is made of, for example, an insulating resin member. The insulating member 7 has a substantially cylindrical shape whose outer diameter is slightly smaller than the inner diameter of the through hole 104 of the lamp housing 101. A flange portion 71 is integrally provided at an upper end portion of one end portion of the insulating member 7. In the upper end portion of the one end portion of the insulating member 7, a plurality of, in this example, four mounting portions 70 are integrally provided so as to correspond to the concave portion of the lamp housing 101. Note that only three attachment portions 70 are shown in FIGS.

  The mounting portion 70 is used to equip the vehicular lamp 100 with the semiconductor light source unit 1. That is, a part of the socket part 11 on the cover part 12 side and the attachment part 70 are inserted into the through hole 104 and the recess of the lamp housing 101. In this state, the socket portion 11 is rotated around the center O axis, and the mounting portion 70 is brought into contact with the stopper portion of the lamp housing 101. At this time, the mounting portion 70 and the flange portion 71 sandwich the edge portion of the through hole 104 of the lamp housing 101 from above and below via the packing 108 (see FIG. 1).

  As a result, as shown in FIG. 1, the socket portion 11 of the semiconductor light source unit 1 is detachably or fixedly attached to the lamp housing 101 of the vehicular lamp 100 via the packing 108. At this time, as shown in FIG. 1, a portion of the socket portion 11 that protrudes outward from the lamp housing 101, that is, a portion below the lamp housing 101 in FIG. 1 is in the lamp chamber 105 of the socket portion 11. Is larger than the portion housed in the lamp housing 101, that is, the portion above the lamp housing 101 in FIG.

  A convex portion 72 is integrally provided on the upper end surface of the one end surface of the insulating member 7. A light source connector 13 is integrally provided at the lower end of the other end of the insulating member 7. A connector 14 on the power supply side is attached to the connector portion 13 so as to be mechanically detachable and electrically connectable.

(Description of heat dissipation member 8)
The heat radiating member 8 radiates heat generated by the light source unit 10 to the outside. The heat dissipating member 8 is made of, for example, an aluminum die casting or a resin member having heat conductivity and conductivity. The heat dissipating member 8 has a flat shape at the upper end at one end and a fin shape from the middle to the lower end at the other end. A contact surface 80 is provided on the upper surface of one end of the heat radiating member 8. The contact surface 80 of the heat radiating member 8 is bonded by a heat conductive medium (not shown) in a state where the contact surfaces 35 of the substrate 3 are in contact with each other. As a result, the semiconductor light emitting elements 40 to 44 are positioned corresponding to the center O of the heat radiating member 8 and the portion near the center O of the socket portion 11 through the substrate 3. .

  The heat conductive medium is, for example, a heat conductive adhesive, and is made of an epoxy resin adhesive, a silicone resin adhesive, an acrylic resin adhesive, etc. Form, tape form, etc. The heat conductive medium may be a heat conductive grease in addition to the heat conductive adhesive.

  Notches 81, 82, and 83 correspond to the insertion holes 31 to 33 of the substrate 3 and the protrusions 72 of the insulating member 7 at substantially the center of the right side, the left side, and the lower side of the three sides of the heat radiating member 8, respectively. Is provided. The three power supply members 91 to 93 are arranged in the notches 81 to 83 of the heat radiating member 8 and the insertion holes 31 to 33 of the substrate 3, respectively. The insulating member 7 is interposed between the heat radiating member 8 and the power feeding members 91 to 93. The heat radiating member 8 is in close contact with the insulating member 7. The power supply members 91 to 93 are in close contact with the insulating member 7.

(Description of power supply members 91-93)
The power supply members 91 to 93 supply power to the light source unit 10. The power feeding members 91 to 93 are made of, for example, a conductive metal member. The upper ends of the one end portions of the power supply members 91 to 93 have a divergent shape, and are positioned in the notches 81 to 83 of the heat radiating member 8 and the insertion holes 31 to 33 of the substrate 3, respectively. One end portions of the power supply members 91 to 93 protrude from the convex portion 72 of the insulating member 7 and are electrically and mechanically connected to the connection member 17.

  The lower ends of the other end portions of the power supply members 91 to 93 have a narrowed shape and are disposed in the connector portion 13. The other end portions of the power supply members 91 to 93 constitute male terminals, that is, male terminals 910, 920, and 930.

(Description of connecting member 17)
The connecting member 17 is composed of a member having conductivity, elasticity, malleability, ductility, and plasticity, for example, a member such as phosphor bronze or brass. The connecting member 17 electrically connects the light source unit 10 and the socket unit 11.

  That is, the connection member 17 is mechanically connected to the substrate 3 by fitting or the like, and is connected to the conductor of the wiring element of the substrate 3 by solder or a conductive adhesive (not shown). Electrically connected. On the other hand, the connection member 17 is electrically and mechanically connected to one end of the power supply members 91 to 93 by elastic contact, crimping, welding, or the like.

(Description of connector portion 13 and connector 14)
The connector 14 is provided with a female terminal, that is, a female terminal (not shown) that is electrically connected to the male terminals 910 to 930 of the connector portion 13. By attaching the connector 14 to the connector portion 13, the female terminal is electrically connected to the male terminals 910 to 930. Further, by removing the connector 14 from the connector portion 13, electrical connection between the female terminal and the male terminals 910 to 930 is interrupted.

  As shown in FIG. 1, the first female terminal and the second female terminal among the female terminals of the connector 14 are connected to a power source, for example, a DC power source battery (not shown) via harnesses 144 and 145 and a switch (not shown). (Not shown). A third female terminal of the female terminals of the connector 14 is grounded or grounded via a harness 146. The connector portion 13 and the connector 14 are 3-pin type connector portions and connectors. That is, the three power feeding members 91 to 93, the three male terminals 910 to 930, and the connector portion and the connector including the three female terminals.

(Description of cover part 12)
The cover portion 12 is made of a light transmissive member. The cover unit 12 is provided with an optical control unit (not shown) such as a prism that optically controls and emits light from the five semiconductor light emitting elements 40 to 44. The cover portion 12 is an optical component.

  As shown in FIG. 1, the cover portion 12 is attached to one end opening of one end portion of the cylindrical socket portion 11 so as to cover the light source portion 10. The cover portion 12 together with the sealing member 180 prevents the five semiconductor light emitting elements 40 to 44 from being affected from the outside, for example, contact with other things or adhesion of dust, and It protects against ultraviolet rays, sulfur gas, NOx and water. That is, the cover part 12 protects the five semiconductor light emitting elements 40 to 44 from disturbance. In addition to the five semiconductor light emitting elements 40 to 44, the cover portion 12 includes the resistance of the control element, the wiring pattern of the diode and the wiring element, the bonding wires 60 to 64, and the mounting pad 601. To 641, the wire pads 602 to 642, and the conductive adhesives 600 to 640 are also protected from disturbance. The cover portion 12 may be provided with a vent hole (not shown).

(Description of the operation of the first embodiment)
Semiconductor light source (light source unit 10) of the vehicular lamp in the first embodiment, the semiconductor light source unit 1 of the vehicular lamp in the first embodiment, and the vehicular lamp 100 in the first embodiment (hereinafter referred to as the light source unit 10). The “semiconductor light source (the light source unit 10), the semiconductor light source unit 1, and the vehicular lamp 100 according to the first embodiment” is configured as described above, and the operation thereof will be described below.

  First, the switch is operated to turn on the tail lamp. Then, a current is supplied to one semiconductor light emitting element 40 having a tail lamp function. As a result, one semiconductor light emitting element 40 having a tail lamp function emits light.

  Light emitted from one semiconductor light emitting element 40 having the tail lamp function is transmitted through the sealing member 180, the air layer, and the cover portion 12 of the semiconductor light source unit 1, and the light distribution is controlled. A part of the light emitted from the semiconductor light emitting element 40 is reflected by the highly reflective surface 30 of the substrate 3 toward the cover portion 12. The light subjected to the light distribution control is transmitted through the lamp lens 102 of the vehicular lamp 100, is again subjected to the light distribution control, and is irradiated to the outside. Thereby, the vehicular lamp 100 irradiates the light distribution of the tail lamp function to the outside.

  Next, the switch is operated to turn on the stop lamp. Then, a current is supplied to the four semiconductor light emitting elements 41 to 44 having a stop lamp function. As a result, the four semiconductor light emitting elements 41 to 44 having the stop lamp function emit light.

  Light emitted from the four semiconductor light emitting elements 41 to 44 having the stop lamp function is transmitted through the sealing member 180, the air layer, and the cover portion 12 of the semiconductor light source unit 1, and the light distribution is controlled. A part of the light emitted from the semiconductor light emitting elements 41 to 44 is reflected by the highly reflective surface 30 of the substrate 3 toward the cover portion 12. The light subjected to the light distribution control is transmitted through the lamp lens 102 of the vehicular lamp 100, is again subjected to the light distribution control, and is irradiated to the outside. Thereby, the vehicular lamp 100 irradiates the light distribution of the stop lamp function to the outside. The light distribution of the stop lamp function is brighter, that is, the luminous flux, the luminance, the luminous intensity, and the illuminance are larger than the light distribution of the tail lamp function.

  Here, heat generated in the semiconductor light emitting elements 40 to 44 of the light source unit 10, the resistance of the control element, and the conductors of the diode and the wiring element is transmitted to the heat radiating member 8 through the substrate 3 and the heat conductive medium, and this heat dissipation. Radiated from the member 8 to the outside.

(Description of the effect of the first embodiment)
The semiconductor-type light source, that is, the light source unit 10, the semiconductor-type light source unit 1, and the vehicular lamp 100 according to the first embodiment is configured and operated as described above, and the effects thereof will be described below.

  By the surrounding wall member 18, the capacity | capacitance with which the sealing member 180 is filled can be controlled to a small capacity | capacitance. As a result, all the semiconductor light emitting elements 40 to 44 having a capacity of the sealing member 180 and a part of the wiring element, that is, a part of the wiring pattern, the bonding wires 60 to 64, the mounting pads 601 to 641, and the wire pad 602 are obtained. ˜642 and the conductive adhesives 600 to 640 are sufficient for sealing, and the capacity is small compared with the capacity of the sealing member filled over the entire mounting surface of the substrate. As a result, since the capacity of the sealing member 180 can be small, the stress and expansion / contraction of the sealing member 180 can be suppressed lower than that of a large capacity sealing member. The five semiconductor light emitting elements 40 to 44 and part of the wiring elements sealed by 180, that is, part of the wiring pattern, bonding wires 60 to 64, mounting pads 601 to 641, wire pads 602 to 642, conductive For example, the peeling of the semiconductor light emitting elements 40 to 44 and the disconnection of the bonding wires 60 to 64 can be suppressed as much as possible. Moreover, compared with the case where the surrounding wall member that requires a large-capacity sealing member and the structure where the distance between the semiconductor light emitting elements is increased, the occurrence of cracks in the sealing member 180 can be suppressed to a low level. The sealing performance of the sealing member 180 can be improved, and the production yield of the optical unit is improved. Furthermore, since the capacity of the sealing member 180 is small, the manufacturing cost can be reduced, and the curing time of the sealing member 180 can be shortened to shorten the manufacturing time.

  By connecting the power supply members 91 to 93 protruding from the surface side of the heat radiating member 8 of the socket part 11 and the substrate 3 of the light source part 10, the contact surface 35 on the back surface of the substrate 3 and the surface of the heat radiating member 8 are connected. The abutting surface 80 of the substrate 3 is arranged in close contact with each other, and the intimate contact between the abutting surface 35 on the back surface of the substrate 3 and the abutting surface 80 on the surface of the heat radiation member 8 is maintained. As a result, the semiconductor light source unit 1 is excellent in heat dissipation performance.

  In particular, the shape of the inner peripheral surface of the wall portion 182 of the surrounding wall member 18 is based on the reference ellipse A whose major axis is the column direction XX of the five semiconductor light emitting elements 40 to 44, or the reference ellipse A. Therefore, as shown in Table 1 below, the shape of the inner peripheral surface of the surrounding wall member can be made smaller than the rectangular or circular shape, and the capacity of the sealing member 180 can be further reduced. Further, the stress of the sealing member 180 can be further reduced as compared with the rectangular shape of the inner peripheral surface of the surrounding wall member.

  Table 1 shows that the shape of the inner peripheral surface of the surrounding wall member is a shape in which the curves at both ends of the reference ellipse are displaced inward, a reference ellipse shape, a rectangular shape, and a circular shape. It is explanatory drawing which shows the capacity | capacitance of the sealing member in the thing of a shape, and the stress of a sealing member.

  The “reflector type” in Table 1 is the shape of the inner peripheral surface of the surrounding wall member, and “ellipse + R” is the shape in which the curves at both ends of the reference ellipse are displaced inward, that is, the first It is the surrounding wall member 18 in this embodiment. The “ellipse” has a shape of a reference ellipse, that is, the reference ellipse A in the above embodiment. The “square” is a rectangular shape. The “circle” is a circular shape.

“Sealing volume [mm ³ ]” is the capacity of the sealing member. The “sealing portion upper surface area [mm ² ]” is an area of the surface (opening surface) opposite to the substrate on the inner peripheral surface of the surrounding wall member. The “sealing portion lower surface area [mm ² ]” is the area of the substrate side surface (closing surface) of the inner peripheral surface of the surrounding wall member. “Maximum tensile stress [Mpa]” is the maximum tensile stress of the sealing member. “Maximum compressive stress [Mpa]” is the maximum compressive stress of the sealing member. Note that the tensile stress and the compressive stress are simulation values.

The "seal volume [mm ^3]" of the "square" is "73.3", "sealed upper surface area [mm ^2]" is "61.3", "sealed lower surface area ^[mm 2] "35.2", "Maximum tensile stress [Mpa]" is "29.5", and "Maximum compressive stress [Mpa]" is "14.7".

Then, "sealing volume [mm ^3]" of the "ellipse" is "58.3", "sealed upper surface area [mm ^2]" is "49.6", "sealed lower surface area [mm ² ] Is “27.1”, “Maximum tensile stress [Mpa]” is “24.7”, and “Maximum compressive stress [Mpa]” is “12.1”.

Then, "oval + R", "sealing volume [mm ^3]" in the "57.3", "sealed upper surface area [mm ^2]" is "48.5", "sealed lower surface area [mm ² ] ”Is“ 26.8 ”,“ Maximum tensile stress [Mpa] ”is“ 22.1 ”, and“ Maximum compressive stress [Mpa] ”is“ 11.4 ”.

Finally, "sealing volume [mm ^3]" of the "circle" is "97.0", "sealed upper surface area [mm ^2]" is "77.6", "sealed lower surface area [mm ² ] Is “50.4”, “Maximum tensile stress [Mpa]” is “21.9”, and “Maximum compressive stress [Mpa]” is “11.2”.

  Thus, as shown in Table 1 above, by setting the shape of the inner peripheral surface of the wall portion 182 of the surrounding wall member 18 to the reference ellipse A or a shape based on the reference ellipse A, the surrounding wall The capacity of the sealing member 180 can be reduced compared to the shape of the inner peripheral surface of the member compared to a rectangle or a circle, and the shape of the inner peripheral surface of the surrounding wall member is sealed compared to a rectangle. The stress of the stop member 180 can be suppressed.

  Since the five semiconductor light emitting elements 40 to 44 are mounted on the substrate 3 in a line, it is suitable for a light distribution pattern of a vehicle lamp having a short vertical direction and a long horizontal direction.

  Of the substrate 3, a range restricted by the surrounding wall member 18, that is, all of the five semiconductor light emitting elements 40 to 44 and a part of the wiring element (part of the wiring pattern, bonding wires 60 to 64, mounting pads 601 to 641. , Wire pads 602 to 642 and conductive adhesives 600 to 640) are sealed by the sealing member 180, but the other range, that is, the resistance of the control element, the majority of the diode and the wiring element (the majority of the wiring pattern) ) Is not sealed by the sealing member 180, heat from most of the control element and the wiring element can be efficiently radiated from the surface of the substrate 3 to the outside, and the heat dissipation effect is improved.

  The two fitting projections 185 and the fitting hole are integrally provided on a diagonal line passing through the center of the ring shape at the bottom of the inner wall surface of the wall portion 182 of the surrounding wall member 18. As a result, the center O of the surrounding wall member 18 and the centers O of the five semiconductor light emitting elements 40 to 44 surrounded by the surrounding wall member 18 coincide with or substantially coincide with each other. For this reason, even if the deviation due to the clearance between the outer shape of the fitting convex portion 185 and the inner diameter of the fitting hole occurs, the semiconductor light emitting elements 40 to 44 and the bonding wires 60 to 64 are surrounded by the surrounding wall member 18. It is easy to secure the distances T1 and T2 that do not come into contact with the inner wall surface. Further, by providing a slight clearance between the outer shape of the fitting convex portion 185 and the inner diameter of the fitting hole, it moves in accordance with the thermal expansion / shrinkage of the sealing member 180, and the mounted semiconductor light emitting elements 40 to 44 and bonding wires The stress which 60-64 receives can be reduced.

  The shape of the inner peripheral surface of the wall portion 182 of the surrounding wall member 18 is a shape based on the reference ellipse A whose major axis is the column direction XX of the five semiconductor light emitting elements 40 to 44, that is, the surrounding wall member. A distance T1 between the inner peripheral surface of the 18 wall portions 182 and the wire pads 612 to 642 and the inner peripheral surface of the wall portion 182 of the surrounding wall member 18 and the wire pads 612 to 642, that is, 0.5 mm or more. And between the inner peripheral surface of the wall portion 182 of the surrounding wall member 18 and the conductive adhesives 610 and 640, and between the inner peripheral surface of the wall portion 182 of the surrounding wall member 18 and the conductive adhesives 610 and 640. Therefore, as shown in Table 1, the shape of the inner peripheral surface of the wall portion 182 of the surrounding wall member 18 is less than that of an ellipse. Making the capacity of the stop member 180 smaller Can, and it is possible to suppress even lower stress of the sealing member 180.

  The shape of the inner peripheral surface of the wall portion 182 of the surrounding wall member 18 is a shape based on the reference ellipse A whose major axis is the column direction XX of the five semiconductor light emitting elements 40 to 44, that is, the reference ellipse A. Since the curves R at both ends in the major axis direction X-X are displaced to the center side of the reference ellipse A as the curves R1, R2, the wall portion of the surrounding wall member 18 is shown in Table 1 above. Compared with an ellipse, the shape of the inner peripheral surface of 182 can further reduce the capacity of the sealing member 180, and can further suppress the stress of the sealing member 180.

  When bonding the bonding wires 60 to 64 to the five wire pads 602 to 642 and the five semiconductor light emitting elements 40 to 44, respectively, the bonding direction and angle of the bonding wires 60 to 64 are shown in FIG. Can be the same. As a result, the process time for bonding the bonding wires 60 to 64 can be shortened, and the bonding wire 60 to 64 can contribute to the quality stability of bonding. That is, it is possible to improve product productivity and product reliability. 6 illustrates a state in which the bonding wires 60 to 64 are inclined at substantially the same angle obliquely from the upper left to the lower right. Although not shown, there are cases where the bonding wires 60 to 64 are bonded while being inclined at substantially the same angle obliquely from the upper right to the lower left.

  Since the thickness from the inner peripheral surface to the outer peripheral surface of the wall portion 182 of the surrounding wall member 18 is substantially uniform or uniform, that is, the cross-sectional shape and size of the wall portion 182 of the surrounding wall member 18 are uniform or substantially uniform. Five semiconductor light emitting elements 40 to 44 and a part of the wiring elements sealed by the sealing member 180, that is, a part of the wiring pattern, bonding wires 60 to 64, mounting pads 601 to 641, and wire pads 602 to 642, since the stress acting on the conductive adhesives 600 to 640 can be made uniform by the sealing member 180, it is possible to prevent adverse effects due to the stress bias.

  The light radiated from the semiconductor light emitting elements 40 to 44 can be reflected in a predetermined direction by the reflecting surface 184 of the surrounding wall member 18, so that the light radiated from the semiconductor light emitting elements 40 to 44 can be effectively used. it can. Moreover, the intended light distribution pattern can be designed by the reflecting surface 184 of the surrounding wall member 18.

  The shape of the inner peripheral surface of the wall portion 182 of the surrounding wall member 18 is a shape based on the reference ellipse A whose major axis is the column direction XX of the five semiconductor light emitting elements 40 to 44, that is, the surrounding wall member. A shape in which the distance between the inner peripheral surface of the 18 wall portions 182 and the conductive adhesives 610 and 640 of the semiconductor light emitting elements 41 and 44 is a distance T2, that is, 0.5 mm or more, or the long axis direction of the reference ellipse A This is a shape in which the curves R at both ends of XX are displaced to the center side of the reference ellipse A as curves R1 and R2. For this reason, the distance between the reflecting surface 184 of the surrounding wall member 18 and the semiconductor light emitting elements 41 and 44 at both the left and right ends in particular is reduced, and the light emitted from the semiconductor light emitting elements 41 and 44 is correspondingly reduced. The light can be efficiently reflected by being efficiently reflected by the reflecting surface 184 of the member 18.

(Description of Second Embodiment)
In the first embodiment, five semiconductor light emitting elements 40 to 44 are used. However, in the present invention, the number of semiconductor light emitting elements may be 2 to 4, or 6 or more. The number and layout of the semiconductor light emitting elements used as the tail lamp function and the number and layout of the semiconductor light emitting elements used as the stop lamp function are not particularly limited. That is, it is sufficient that a plurality of semiconductor light emitting elements are mounted in a line.

  Moreover, in the said 1st Embodiment, it uses for the dual function lamp of a tail stop lamp. However, in the present invention, it can also be used for a dual function lamp of a combination lamp other than a dual function lamp of a tail stop lamp. That is, a semiconductor light-emitting element that is supplied with a small current and emits a small amount of light and a semiconductor light-emitting element that is supplied with a large current and emits a large amount of light can be substituted for a subfilament having a small amount of emitted light and a main filament having a large amount of light emitted. it can.

  Furthermore, in the first embodiment, it is used for a dual-function lamp of a tail stop lamp. However, in the present invention, it can be used for a single-function lamp. That is, a plurality of semiconductor light emitting elements can be used for a single function lamp instead of a single filament. Single-function lamps include turn signal lamps, backup lamps, stop lamps, tail lamps, low beam lamps for headlamps, that is, headlamps for passing, highlight lamps for headlamps, that is, headlamps for driving, fog lamps, clearance lamps, cornering lamps, dimming lamps. There are time running lamps.

  Furthermore, in the first embodiment, it is used to switch between two lamps, a tail lamp and a stop lamp. However, in the present invention, it can be used for switching three or more lamps, or can be used for one lamp that does not perform switching.

  Furthermore, in the first embodiment, the heat radiating member 8 of the socket portion 11 is covered with the insulating member 7. However, in the present invention, a part of the heat radiating member 8 of the socket part 11, in particular, a fin-shaped part at the rear part may be exposed from the insulating member 7.

  Furthermore, in the first embodiment, the mounting direction of the connector 14 on the power source side 14 to the connector portion 13 and the mounting direction of the semiconductor light source unit 1 to the vehicle lamp 100 are the same or parallel. is there. However, in the present invention, the direction in which the power source side connector 14 is attached to the connector portion 13 and the direction in which the semiconductor light source unit 1 is attached to the vehicular lamp 100 may intersect or be orthogonal to each other.

  Furthermore, in the first embodiment, the shape of the inner peripheral surface of the wall portion 182 of the surrounding wall member 18 is a reference ellipse whose major axis direction is the column direction XX of the five semiconductor light emitting devices 40 to 44. The shape is based on A. However, in the present invention, the shape of the inner peripheral surface of the wall portion 182 of the surrounding wall member 18 is the reference ellipse A itself having the major axis direction in the column direction XX of the five semiconductor light emitting elements 40 to 44. Also good.

  Furthermore, in the first embodiment, after the wire pads 602 to 642 and the mounting pads 601 to 641 are mounted on the substrate 3, the surrounding wall member 18 is mounted on the substrate 3, and then the semiconductor is mounted on the substrate 3. The light emitting elements 40 to 44 are mounted and the bonding wires 60 to 64 are bonded. However, in the present invention, the surrounding wall member mounting step, the semiconductor light emitting device mounting step, and the wire bonding step may be interchanged.

  Furthermore, in the first embodiment, the displacement curves R1 and R2 of the shape of the inner peripheral surface of the wall portion 182 of the surrounding wall member 18 based on the reference ellipse A are the first displacement curve R1 and the second displacement curve. And R2. However, in the present invention, if the displacement curve is smooth, it may be one displacement curve, and if the displacement curve is further smoothed, it may be three or more displacement curves.

  Furthermore, in the first embodiment, when an epoxy resin is used as the sealing member 180, the surrounding wall member 18 is more flexible to relieve stress due to expansion and contraction of the epoxy resin. You may use the provided elastomeric resin.

  Furthermore, in the first embodiment, there is provided a reflecting surface 184 that is inclined in a divergent manner from the lower end of one end of the inner peripheral surface of the wall portion 182 of the surrounding wall member 18 to the upper end of the other end. is there. However, in this invention, it is not necessary to provide a reflecting surface on the inner peripheral surface of the wall portion of the surrounding wall member. In this case, the inner peripheral surface of the wall portion of the surrounding wall member may be a vertical surface instead of an inclined surface.

  Furthermore, in the first embodiment, the thickness of the wall portion 182 of the surrounding wall member 18, that is, the thickness from the inner peripheral surface to the outer peripheral surface of the wall portion 182 is substantially uniform or equal. However, in the present invention, the wall thickness of the surrounding wall member may not be substantially uniform.

DESCRIPTION OF SYMBOLS 100 Vehicle lamp 101 Lamp housing 102 Lamp lens 103 Reflector 104 Through-hole 105 Lamp chamber 106 Through-hole 107 Reflecting surface 108 Packing 1 Semiconductor type light source unit 10 Light source part (semiconductor type light source)
DESCRIPTION OF SYMBOLS 11 Socket part 12 Cover part 13 Connector part 14 Connector 144, 145, 146 Harness 17 Connection member 18 Surrounding wall member 180 Sealing member 181 Hollow part 182 Wall part 184 Reflecting surface 185 Fitting convex part 3 Substrate 30 High reflecting surface 31 32, 33 Insertion hole 34 Mounting surface 35 Contact surface 40, 41, 42, 43, 44 Semiconductor light emitting device 60, 61, 62, 63, 64 Bonding wire (wiring device)
600, 610, 620, 630, 640 conductive adhesive (wiring element)
601, 611, 621, 631, 641 Mounting pad (wiring element)
602, 612, 622, 632, 642 Wire pad (wiring element)
7 Insulating member 70 Mounting portion 71 Gutter portion 72 Convex portion 8 Heat radiation member 80 Contact surface 81, 82, 83 Notch 91, 92, 93 Power supply member 910, 920, 930 Male terminal A Reference ellipse B Distance from wire pad T1 Point C Point at a distance T2 from the conductive adhesive F Focal point O Center R Reference ellipse curve R1, R2 Displacement curve T1 Distance between the surrounding wall member and the wire pad T2 Distance between the surrounding wall member and the conductive adhesive X- X Straight line, long axis direction YY Straight line, short axis direction

Claims (7)

A substrate having a mounting surface;
A plurality of semiconductor light emitting devices mounted in a row on the mounting surface of the substrate;
A control element for controlling light emission of the semiconductor light emitting element;
A wiring element that feeds power to the semiconductor light emitting element via the control element;
A ring-shaped surrounding wall member surrounding all of the plurality of semiconductor light emitting elements;
A light-transmitting sealing member that seals the plurality of semiconductor light-emitting elements in the recess formed in the mounting surface of the substrate and the surrounding wall member;
With
The shape of the inner peripheral surface of the surrounding wall member is an ellipse or a shape based on an ellipse whose major axis direction is the column direction of the plurality of semiconductor light emitting elements.
A semiconductor-type light source for a vehicular lamp. A socket portion formed by combining an insulating member, a heat radiating member, and a power feeding member;
The semiconductor-type light source of the vehicular lamp according to claim 1 attached to the socket part,
Comprising
A semiconductor-type light source unit for a vehicular lamp. The surrounding wall member has a ring shape in which a central part is a hollow part and a peripheral part is a wall part,
The mounting surface of the substrate and the bottom surface of the surrounding wall member are provided with at least one uneven fitting portion that fits each other,
The substrate and the surrounding wall member are joined by filling the sealing member that seals the semiconductor light emitting element,
The semiconductor type light source of the vehicular lamp according to claim 1 or the semiconductor type light source unit of the vehicular lamp according to claim 2. The shape of the inner peripheral surface of the wall portion of the surrounding wall member is an ellipse or an ellipse having a distance of 0.5 mm or more that does not contact any of the conductive adhesives and wire pads of the plurality of semiconductor light emitting elements. The shape is based on
The semiconductor-type light source unit of the vehicular lamp according to claim 3. The plurality of wire pads are located on the middle line of two adjacent semiconductor light emitting elements and at positions equidistant from the semiconductor light emitting elements.
The semiconductor-type light source unit for a vehicular lamp according to claim 4. The cross-sectional shape and size of the wall portion of the surrounding wall member are uniform.
The semiconductor-type light source unit for a vehicle lamp according to any one of claims 3 to 5, wherein In a vehicular lamp using a semiconductor-type light source as a light source,
A lamp housing and a lamp lens that partition the lamp chamber;
The semiconductor-type light source of the vehicular lamp according to claim 1 or the semiconductor-type light source unit of the vehicular lamp according to any one of claims 2 to 6, which is disposed in the lamp chamber;
A vehicular lamp characterized by comprising:

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