JPH0446471B2 - - Google Patents

Info

Publication number
JPH0446471B2
JPH0446471B2 JP59253684A JP25368484A JPH0446471B2 JP H0446471 B2 JPH0446471 B2 JP H0446471B2 JP 59253684 A JP59253684 A JP 59253684A JP 25368484 A JP25368484 A JP 25368484A JP H0446471 B2 JPH0446471 B2 JP H0446471B2
Authority
JP
Japan
Prior art keywords
electrode
semiconductor
substrate
capacitance
radiation detector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59253684A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61131568A (ja
Inventor
Yasukazu Seki
Noritada Sato
Masaya Yabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Priority to JP59253684A priority Critical patent/JPS61131568A/ja
Publication of JPS61131568A publication Critical patent/JPS61131568A/ja
Priority to US07/153,520 priority patent/US4896200A/en
Publication of JPH0446471B2 publication Critical patent/JPH0446471B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/29—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/29—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation
    • H10F30/295—Surface barrier or shallow PN junction radiation detectors, e.g. surface barrier alpha-particle detectors
    • H10F30/2955—Shallow PN junction radiation detectors

Landscapes

  • Light Receiving Elements (AREA)
  • Measurement Of Radiation (AREA)
JP59253684A 1984-11-30 1984-11-30 半導体放射線検出器 Granted JPS61131568A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP59253684A JPS61131568A (ja) 1984-11-30 1984-11-30 半導体放射線検出器
US07/153,520 US4896200A (en) 1984-11-30 1988-02-01 Novel semiconductor-based radiation detector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59253684A JPS61131568A (ja) 1984-11-30 1984-11-30 半導体放射線検出器

Publications (2)

Publication Number Publication Date
JPS61131568A JPS61131568A (ja) 1986-06-19
JPH0446471B2 true JPH0446471B2 (en, 2012) 1992-07-30

Family

ID=17254711

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59253684A Granted JPS61131568A (ja) 1984-11-30 1984-11-30 半導体放射線検出器

Country Status (2)

Country Link
US (1) US4896200A (en, 2012)
JP (1) JPS61131568A (en, 2012)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5156979A (en) * 1986-01-21 1992-10-20 Fuji Electric Co., Ltd. Semiconductor-based radiation-detector element
JPH06101577B2 (ja) * 1986-01-21 1994-12-12 富士電機株式会社 半導体放射線検出器
US5621238A (en) * 1994-02-25 1997-04-15 The United States Of America As Represented By The Secretary Of The Air Force Narrow band semiconductor detector
US5844291A (en) 1996-12-20 1998-12-01 Board Of Regents, The University Of Texas System Wide wavelength range high efficiency avalanche light detector with negative feedback
US5880490A (en) * 1997-07-28 1999-03-09 Board Of Regents, The University Of Texas System Semiconductor radiation detectors with intrinsic avalanche multiplication in self-limiting mode of operation
US6885827B2 (en) * 2002-07-30 2005-04-26 Amplification Technologies, Inc. High sensitivity, high resolution detection of signals
EP1624490B1 (en) * 2004-08-04 2018-10-03 Heptagon Micro Optics Pte. Ltd. Large-area pixel for use in an image sensor
US8742522B2 (en) 2012-04-10 2014-06-03 Ev Products, Inc. Method of making a semiconductor radiation detector
WO2019115876A1 (en) * 2017-12-12 2019-06-20 Emberion Oy Photosensitive field-effect transistor

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4228315A (en) * 1979-05-04 1980-10-14 Rca Corporation Solar cell grid patterns
US4394676A (en) * 1980-12-17 1983-07-19 Agouridis Dimitrios C Photovoltaic radiation detector element
DE8232497U1 (de) * 1982-11-19 1986-01-30 Siemens AG, 1000 Berlin und 8000 München Solarzelle aus amorphem Silizium
US4539431A (en) * 1983-06-06 1985-09-03 Sera Solar Corporation Pulse anneal method for solar cell
JPS59227168A (ja) * 1983-06-08 1984-12-20 Fuji Electric Corp Res & Dev Ltd 半導体放射線検出器
JPS6047471A (ja) * 1983-08-26 1985-03-14 Fuji Electric Corp Res & Dev Ltd 半導体放射線検出器
US4590327A (en) * 1984-09-24 1986-05-20 Energy Conversion Devices, Inc. Photovoltaic device and method

Also Published As

Publication number Publication date
US4896200A (en) 1990-01-23
JPS61131568A (ja) 1986-06-19

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Legal Events

Date Code Title Description
R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

EXPY Cancellation because of completion of term