JPH0444467B2 - - Google Patents

Info

Publication number
JPH0444467B2
JPH0444467B2 JP58031809A JP3180983A JPH0444467B2 JP H0444467 B2 JPH0444467 B2 JP H0444467B2 JP 58031809 A JP58031809 A JP 58031809A JP 3180983 A JP3180983 A JP 3180983A JP H0444467 B2 JPH0444467 B2 JP H0444467B2
Authority
JP
Japan
Prior art keywords
region
gate region
gate
cell
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58031809A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59158681A (ja
Inventor
Junichi Nishizawa
Akio Azuma
Tetsuo Sen
Hisashi Ooshiba
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Holdings Corp
Original Assignee
Fuji Photo Film Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Photo Film Co Ltd filed Critical Fuji Photo Film Co Ltd
Priority to JP58031809A priority Critical patent/JPS59158681A/ja
Publication of JPS59158681A publication Critical patent/JPS59158681A/ja
Publication of JPH0444467B2 publication Critical patent/JPH0444467B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/196—Junction field effect transistor [JFET] image sensors; Static induction transistor [SIT] image sensors

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP58031809A 1983-03-01 1983-03-01 固体撮像装置 Granted JPS59158681A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58031809A JPS59158681A (ja) 1983-03-01 1983-03-01 固体撮像装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58031809A JPS59158681A (ja) 1983-03-01 1983-03-01 固体撮像装置

Publications (2)

Publication Number Publication Date
JPS59158681A JPS59158681A (ja) 1984-09-08
JPH0444467B2 true JPH0444467B2 (en:Method) 1992-07-21

Family

ID=12341417

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58031809A Granted JPS59158681A (ja) 1983-03-01 1983-03-01 固体撮像装置

Country Status (1)

Country Link
JP (1) JPS59158681A (en:Method)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6066580A (ja) * 1983-09-22 1985-04-16 Matsushita Electronics Corp 固体撮像装置
JPH0773344B2 (ja) * 1984-12-27 1995-08-02 キヤノン株式会社 固体撮像装置

Also Published As

Publication number Publication date
JPS59158681A (ja) 1984-09-08

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