JPH0442930Y2 - - Google Patents

Info

Publication number
JPH0442930Y2
JPH0442930Y2 JP6035186U JP6035186U JPH0442930Y2 JP H0442930 Y2 JPH0442930 Y2 JP H0442930Y2 JP 6035186 U JP6035186 U JP 6035186U JP 6035186 U JP6035186 U JP 6035186U JP H0442930 Y2 JPH0442930 Y2 JP H0442930Y2
Authority
JP
Japan
Prior art keywords
insulating film
semiconductor
lead
view
conductor pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP6035186U
Other languages
Japanese (ja)
Other versions
JPS62172157U (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP6035186U priority Critical patent/JPH0442930Y2/ja
Publication of JPS62172157U publication Critical patent/JPS62172157U/ja
Application granted granted Critical
Publication of JPH0442930Y2 publication Critical patent/JPH0442930Y2/ja
Expired legal-status Critical Current

Links

Description

【考案の詳細な説明】 [産業上の利用分野] 本考案は電力増幅器等発熱を伴う半導体装置に
関し、熱放散用放熱器と半導体との絶縁フイルム
に関する。
[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a semiconductor device that generates heat, such as a power amplifier, and relates to an insulating film between a radiator for heat dissipation and a semiconductor.

[従来の技術] 従来この種の放熱器は発熱する半導体を絶縁フ
イルムを介し放熱器に取付け、半導体リードを積
層印刷配線板又は配線導線(中継線)により半田
付する等の処理を行つてきた。
[Prior art] Conventionally, this type of heatsink has been processed by attaching a heat-generating semiconductor to the heatsink via an insulating film, and soldering the semiconductor leads to a laminated printed wiring board or wiring conductor (relay wire). .

[解決すべき問題点] 上述した従来の半導体と回路相互接続では熱放
散用放熱器の形状、取付方向が制約され製品形状
の自由度が失われ、特に放熱器と積層配線板との
構造が複雑となり、小形、軽量化指向に反すると
いう問題があつた。又中継線による方法では、半
導体リードと中継線線材との接続作業性の悪さ及
び信頼性低下が問題となつていた。
[Problems to be solved] In the conventional semiconductor and circuit interconnection described above, the shape and mounting direction of the heat dissipation radiator are restricted, and the degree of freedom in the product shape is lost.In particular, the structure of the radiator and the laminated wiring board is There was a problem that it became complicated and went against the trend of compactness and weight reduction. Furthermore, the method using a relay wire has problems in that the connection workability between the semiconductor lead and the relay wire material is poor and the reliability is lowered.

[問題点の解決手段] この考案は、上記事情に鑑みてなされたもの
で、半導体素子と基板の間に敷設される絶縁フイ
ルムにおいて、内部に埋設された導体パターン
と、前記導体パターンを露出するリード取付部と
を具備することを特徴とする。
[Means for solving the problem] This invention was made in view of the above circumstances, and includes a conductor pattern buried inside an insulating film laid between a semiconductor element and a substrate, and a method for exposing the conductor pattern. It is characterized by comprising a lead attachment part.

[実施例] 以下、図面を参照してこの考案の実施例につい
て説明する。
[Example] Hereinafter, an example of this invention will be described with reference to the drawings.

第1図aおよびbは各々この考案の第1実施例
による絶縁フイルムを示す平面図およびそのA−
A線視断面図である。これらの図において、1は
フイルムであり、絶縁性と熱伝導性に優れてい
る。このフイルム1の厚さ方向中央部には3条の
導体パターン2,3,4が埋設されている。な
お、1aは半導体取付孔であり、導体パターン
3,4はこの半導体取付孔1aと干渉しないよう
に同半導体取付孔1aを迂回して埋設されてい
る。
FIGS. 1a and 1b are a plan view showing an insulating film according to a first embodiment of the invention, and FIG.
It is a sectional view taken along line A. In these figures, 1 is a film, which has excellent insulation and thermal conductivity. Three conductor patterns 2, 3, and 4 are buried in the center of the film 1 in the thickness direction. Note that 1a is a semiconductor mounting hole, and the conductor patterns 3 and 4 are buried around the semiconductor mounting hole 1a so as not to interfere with the semiconductor mounting hole 1a.

又、5,5……は導体パターン2,3,4を露
出させるリード取付穴であり、又6,6,6……
は導体パターン2,3,4を露出させ、かつ同導
体パターン2,3,4を貫通してフイルム1の裏
面に開孔するリード貫通取付孔である。
Further, 5, 5... are lead mounting holes that expose the conductor patterns 2, 3, 4, and 6, 6, 6...
is a lead through-attachment hole that exposes the conductive patterns 2, 3, and 4, and that penetrates through the conductive patterns 2, 3, and 4 to open on the back surface of the film 1.

以上の構成を有する絶縁フイルムの取付状態を
第3図に示す。
FIG. 3 shows how the insulating film having the above structure is attached.

第3図aおよびbは各々同絶縁フイルムの取付
状態を示す平面図及び断面図である。これらの図
において10は半導体、11は放熱器である。こ
れら半導体10と放熱器11との間にはフイルム
1が介挿されている。そして、これら半導体1
0、フイルム1および放熱器11が上記半導体取
付孔1aを貫通するネジ12によつて一体化され
ている。なお、13はネジ12と半導体10とを
絶縁する絶縁ブツシユである。
Figures 3a and 3b are a plan view and a cross-sectional view, respectively, showing how the insulating film is attached. In these figures, 10 is a semiconductor and 11 is a heat sink. A film 1 is inserted between the semiconductor 10 and the heat sink 11. And these semiconductors 1
0, the film 1 and the heat sink 11 are integrated by a screw 12 passing through the semiconductor mounting hole 1a. Note that 13 is an insulating bushing that insulates the screw 12 and the semiconductor 10.

又、半導体10の3本のリード14,14,1
4は各々リード取付穴5,5,5において対応す
る導体パターン2,3,4に半田付けされてい
る。
Also, the three leads 14, 14, 1 of the semiconductor 10
4 are soldered to the corresponding conductor patterns 2, 3, 4 in the lead attachment holes 5, 5, 5, respectively.

しかして、放熱器11の形状、取付方向に制約
されることがなくなり、設計上の自由度が向上し
て小形、軽量化が図られる。
Therefore, there are no restrictions on the shape and mounting direction of the heat sink 11, and the degree of freedom in design is improved, resulting in a reduction in size and weight.

次に、第2図aおよびbは各々この考案の第2
実施例による絶縁フイルムを示す平面図およびA
−A線視断面図である。これらの図において導体
パターン21,22,23,24,25は各々2
段に積層されている。すなわち、導体パターン2
1……25は各々所定の間隔を置いて上下方向に
積層された2つの導体パターン21aおよび21
b,22aおよび22b,23aおよび23b,
24aおよび24b,25aおよび25bからな
つている。これによつて多数のリードを備えた半
導体の取付けが可能になる。なお、図中26は、
リード貫通取付孔である。
Next, Figures 2a and b are respectively the second part of this invention.
A plan view showing an insulating film according to an example and A
- It is a sectional view taken along the A line. In these figures, the conductor patterns 21, 22, 23, 24, 25 are each 2
Laminated in tiers. That is, conductor pattern 2
1...25 are two conductor patterns 21a and 21 stacked vertically at a predetermined interval, respectively.
b, 22a and 22b, 23a and 23b,
It consists of 24a and 24b, 25a and 25b. This allows mounting of semiconductors with multiple leads. In addition, 26 in the figure is
This is a lead through mounting hole.

[考案の効果] 以上説明したようにこの考案によれば、半導体
素子と基板の間に敷設される絶縁フイルムにおい
て、内部に埋設された導体パターンと、前記導体
パターンを露出するリード取付部とを具備したの
で、放熱器の形状、取付方向に制約されることが
なくなり、設計上の自由度が向上して小形、軽量
化が図れる効果が得られる。
[Effects of the invention] As explained above, according to this invention, in the insulating film laid between the semiconductor element and the substrate, the conductor pattern buried inside and the lead attachment part exposing the conductor pattern can be separated. With this, there are no restrictions on the shape and mounting direction of the radiator, and the degree of freedom in design is improved, resulting in the effect of achieving smaller size and lighter weight.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図aおよびbは各々この考案の第1実施例
による絶縁フイルムを示す平面図およびそのA−
A線視断面図、第2図aおよびbは各々この考案
の第2実施例による絶縁フイルムを示す平面図お
よびそのA−A線視断面図、第3図aおよびbは
各々上記第1実施例による絶縁フイルムの取付状
態を示す平面図および断面図である。 2,3,4,21,22,23,24,25…
…導体パターン、5……リード取付穴、6……リ
ード貫通取付孔(以上5,6はリード取付部)、
10……半導体、11……放熱器、12……ネ
ジ、13……絶縁ブツシユ、14……リード。
FIGS. 1a and 1b are a plan view showing an insulating film according to a first embodiment of the invention, and FIG.
A sectional view taken along line A, FIGS. 2a and b are respectively a plan view and a sectional view taken along line AA of the insulating film according to the second embodiment of this invention, and FIGS. FIG. 3 is a plan view and a cross-sectional view showing how an insulating film is attached according to an example. 2, 3, 4, 21, 22, 23, 24, 25...
...Conductor pattern, 5...Lead mounting hole, 6...Lead through mounting hole (5 and 6 above are lead mounting parts),
10...Semiconductor, 11...Radiator, 12...Screw, 13...Insulating bushing, 14...Lead.

Claims (1)

【実用新案登録請求の範囲】 (1) 半導体素子と基板の間に敷設される絶縁フイ
ルムにおいて、内部に埋設された導体パターン
と、前記導体パターンを露出するリード取付部
とを具備することを特徴とする絶縁フイルム。 (2) 上記導体パターンが複数積層されていること
を特徴とする実用新案登録請求の範囲第1項記
載の絶縁フイルム。
[Claims for Utility Model Registration] (1) An insulating film laid between a semiconductor element and a substrate, characterized by comprising a conductor pattern buried inside and a lead attachment part exposing the conductor pattern. Insulating film. (2) The insulating film according to claim 1, which is characterized in that a plurality of the conductor patterns are laminated.
JP6035186U 1986-04-22 1986-04-22 Expired JPH0442930Y2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6035186U JPH0442930Y2 (en) 1986-04-22 1986-04-22

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6035186U JPH0442930Y2 (en) 1986-04-22 1986-04-22

Publications (2)

Publication Number Publication Date
JPS62172157U JPS62172157U (en) 1987-10-31
JPH0442930Y2 true JPH0442930Y2 (en) 1992-10-12

Family

ID=30892688

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6035186U Expired JPH0442930Y2 (en) 1986-04-22 1986-04-22

Country Status (1)

Country Link
JP (1) JPH0442930Y2 (en)

Also Published As

Publication number Publication date
JPS62172157U (en) 1987-10-31

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