JPH0442559A - Manufacture of semiconductor device - Google Patents

Abstract

PURPOSE:To obtain a highly reliable semiconductor device through prevention of remaining etching for aluminum at scribe surface and defect by elimination of aluminum in the next step by selectively forming aluminum wirings in a scribe region. CONSTITUTION:An insulating film 101 consisting of silicon dioxide is formed, by the ordinary thermal oxidation method, on an N type silicon substrate 100 having a specific resistance 10 and then patterning is carried out. Next, aluminum 102 is formed by the ordinary vacuum deposition method or sputtering and aluminum wiring layer is formed by patterning aluminum layer. This aluminum wiring is structured with a pattern which is in direct contact with the silicon substrate 100 and overlaps on the insulating film 101. Next, a passivation film 103 is formed on the pattern and patterning is then conducted. A scribe region may be formed through the processes explained above.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for manufacturing a semiconductor device, particularly an integrated circuit formed by a wafer process.

[Summary of the invention]

In the method of manufacturing a semiconductor device, the present invention prevents Al etching residue on the scribe surface by selectively forming A1 wiring in the scribe area, and
This prevents defects due to detachment.

[Conventional technology]

Conventionally, as shown in FIG. 2, a method for forming a scribe region involves a process in which a silicon substrate is exposed in the scribe region and an insulating film 101 and a passivation film 103 are formed at the scribe end portion. is used.

[Problem to be solved by the invention]

However, in the above-mentioned conventional technology, etching is performed to expose the silicon substrate in each step of the process, so the silicon substrate in the scribe area is gradually etched in each etching step, especially at the edges of the scribe. In such a situation, the silicon substrate is etched to the extent that the edges of the insulating film become sparse. Under these circumstances, in the next process, especially during resist exposure during the formation of the A1 wiring, the silicon substrate is coated on the edges of the scribe described above. The resist may not be fully exposed.

As a result, in the next resist stripping step,
It is conceivable that this Al may detach and adhere to the surface of the IC chip, causing reliability problems.

The present invention solves these problems of conventional semiconductor devices, and its purpose is to provide a more stable and reliable semiconductor device.

[Means to solve the problem]

The method for manufacturing a semiconductor device of the present invention includes a step of forming a first oxide film on the surface of a silicon substrate in a scribe region of a silicon wafer, and a step of forming a second metal film after patterning the first oxide film. , forming a third passivation film after patterning the second metal film, and patterning the third passivation film.

〔Example〕

FIG. 1 is a cross-sectional view of a manufacturing process of a semiconductor device according to an embodiment of the present invention.

First, as shown in Figure 1(a), the specific resistance is 10 (Ω-c
An insulating film 101 made of silicon dioxide is formed on the N-type silicon substrate 100 (m) by a normal thermal oxidation method and patterned.

Next, as shown in FIG. 1(b), A1102 is formed by normal vapor deposition or sputtering.

Next, as shown in FIG. 1(e), the above-mentioned A1 is patterned to form an Al wiring layer.

The A1 wiring is in direct contact with the silicon substrate 100 and has a pattern that overlaps the insulating film 101.

Next, as shown in FIG. 1(d), a passivation film 103 is formed on the pattern and patterning is performed.

A scribe area is formed through the above steps.

In this embodiment, the A1 wiring layer has a one-layer structure, but a multilayer wiring of two or more layers can also be realized by adding steps similar to those described above. Furthermore, the width of the AI wiring to be formed must be an appropriate width that does not affect the dicing process.

〔Effect of the invention〕

As described above, according to the present invention, as a measure to prevent defects due to Al residue in the scribe area, Al wiring patterns are actively formed in areas where Al residue is likely to occur in the scribe area, thereby preventing A1 etching. The rest can be prevented.

As a result, it is possible to reduce defects caused by A1 etc. adhering to the IC chip in the next process, and it is possible to provide a more reliable semiconductor device.

102...Al wiring 103...passivation film that's all Applicant: Seiko Epson Corporation Agent: Patent attorney Kisanbe Suzuki (1 person)

[Brief explanation of drawings]

FIG. 1 is a sectional view of a semiconductor device according to an embodiment of the present invention. FIG. 2 is a cross-sectional view showing the structure of a conventional semiconductor device. 100...N-type silicon substrate 101...Insulating film

Claims (1)

[Claims] A step of forming a first oxide film on the surface of a silicon substrate in a scribe region of a silicon wafer, a step of forming a second metal film after patterning the first oxide film, and a patterning of the second metal film. A method for manufacturing a semiconductor device, comprising the steps of subsequently forming a third passivation film and patterning the third passivation film.