JPH0439776B2 - - Google Patents
Info
- Publication number
- JPH0439776B2 JPH0439776B2 JP59117123A JP11712384A JPH0439776B2 JP H0439776 B2 JPH0439776 B2 JP H0439776B2 JP 59117123 A JP59117123 A JP 59117123A JP 11712384 A JP11712384 A JP 11712384A JP H0439776 B2 JPH0439776 B2 JP H0439776B2
- Authority
- JP
- Japan
- Prior art keywords
- container
- terminal plate
- ceramic
- thermal expansion
- ceramic terminal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000919 ceramic Substances 0.000 claims description 41
- 239000000463 material Substances 0.000 claims description 14
- 239000007788 liquid Substances 0.000 claims description 11
- 238000007654 immersion Methods 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 9
- 238000005304 joining Methods 0.000 claims description 8
- 238000001816 cooling Methods 0.000 claims description 7
- 238000005476 soldering Methods 0.000 claims description 6
- 239000002826 coolant Substances 0.000 claims description 3
- 229910000679 solder Inorganic materials 0.000 description 13
- 239000000110 cooling liquid Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 229910020816 Sn Pb Inorganic materials 0.000 description 4
- 229910020922 Sn-Pb Inorganic materials 0.000 description 4
- 229910008783 Sn—Pb Inorganic materials 0.000 description 4
- 230000005496 eutectics Effects 0.000 description 4
- 238000001465 metallisation Methods 0.000 description 4
- 238000007789 sealing Methods 0.000 description 4
- 229910000838 Al alloy Inorganic materials 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 229910000833 kovar Inorganic materials 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 238000005219 brazing Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000007772 electroless plating Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 239000003507 refrigerant Substances 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000009972 noncorrosive effect Effects 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59117123A JPS60261157A (ja) | 1984-06-07 | 1984-06-07 | セラミック端子板の気密接合方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59117123A JPS60261157A (ja) | 1984-06-07 | 1984-06-07 | セラミック端子板の気密接合方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60261157A JPS60261157A (ja) | 1985-12-24 |
| JPH0439776B2 true JPH0439776B2 (enrdf_load_stackoverflow) | 1992-06-30 |
Family
ID=14703999
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59117123A Granted JPS60261157A (ja) | 1984-06-07 | 1984-06-07 | セラミック端子板の気密接合方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60261157A (enrdf_load_stackoverflow) |
-
1984
- 1984-06-07 JP JP59117123A patent/JPS60261157A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60261157A (ja) | 1985-12-24 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |