JPH0439773B2 - - Google Patents
Info
- Publication number
- JPH0439773B2 JPH0439773B2 JP14632083A JP14632083A JPH0439773B2 JP H0439773 B2 JPH0439773 B2 JP H0439773B2 JP 14632083 A JP14632083 A JP 14632083A JP 14632083 A JP14632083 A JP 14632083A JP H0439773 B2 JPH0439773 B2 JP H0439773B2
- Authority
- JP
- Japan
- Prior art keywords
- gate
- lift
- layer
- gate metal
- concentration region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000463 material Substances 0.000 claims description 17
- 239000004065 semiconductor Substances 0.000 claims description 12
- 239000007769 metal material Substances 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 8
- 238000005468 ion implantation Methods 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims description 3
- 238000002513 implantation Methods 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 2
- 239000010408 film Substances 0.000 description 10
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 9
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 230000003071 parasitic effect Effects 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 239000012535 impurity Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- ZXEYZECDXFPJRJ-UHFFFAOYSA-N $l^{3}-silane;platinum Chemical compound [SiH3].[Pt] ZXEYZECDXFPJRJ-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910021339 platinum silicide Inorganic materials 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14632083A JPS6038883A (ja) | 1983-08-12 | 1983-08-12 | ショットキゲ−ト型ｆｅｔの製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14632083A JPS6038883A (ja) | 1983-08-12 | 1983-08-12 | ショットキゲ−ト型ｆｅｔの製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6038883A JPS6038883A (ja) | 1985-02-28 |
| JPH0439773B2 true JPH0439773B2 (de) | 1992-06-30 |
Family
ID=15404998
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14632083A Granted JPS6038883A (ja) | 1983-08-12 | 1983-08-12 | ショットキゲ−ト型ｆｅｔの製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6038883A (de) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6337701A (ja) * | 1986-07-31 | 1988-02-18 | Nippon Dengiyou Kosaku Kk | 複合形帯域阻止ろ波器 |
| WO2007072247A2 (en) * | 2005-12-22 | 2007-06-28 | Koninklijke Philips Electronics N.V. | An improved lift-off technique suitable for nanometer-scale patterning of metal layers |
-
1983
- 1983-08-12 JP JP14632083A patent/JPS6038883A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6038883A (ja) | 1985-02-28 |
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