JPH0438840A - Bonding wire for semiconductor element - Google Patents

Bonding wire for semiconductor element

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Publication number
JPH0438840A
JPH0438840A JP2146498A JP14649890A JPH0438840A JP H0438840 A JPH0438840 A JP H0438840A JP 2146498 A JP2146498 A JP 2146498A JP 14649890 A JP14649890 A JP 14649890A JP H0438840 A JPH0438840 A JP H0438840A
Authority
JP
Japan
Prior art keywords
boiling point
low boiling
ball
low
ppm
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2146498A
Other languages
Japanese (ja)
Other versions
JP2888252B2 (en
Inventor
Katsuyuki Toyofuku
豊福　克之
Ichiro Nagamatsu
永松　一郎
Shinji Shirakawa
白川　信次
Sukehito Iga
祐人 伊賀
Takeshi Kujiraoka
鯨岡　毅
Norimasa Murakami
村上　憲正
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tanaka Denshi Kogyo KK
Original Assignee
Tanaka Denshi Kogyo KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tanaka Denshi Kogyo KK filed Critical Tanaka Denshi Kogyo KK
Priority to JP2146498A priority Critical patent/JP2888252B2/en
Priority to US07/708,204 priority patent/US5298219A/en
Priority to MYPI91000971A priority patent/MY113367A/en
Priority to GB9111994A priority patent/GB2245902B/en
Publication of JPH0438840A publication Critical patent/JPH0438840A/en
Priority to GB9401294A priority patent/GB2273716B/en
Priority to US08/453,999 priority patent/US5538685A/en
Application granted granted Critical
Publication of JP2888252B2 publication Critical patent/JP2888252B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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    • H01L2224/45001—Core members of the connector
    • H01L2224/4501—Shape
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    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

PURPOSE:To enable strength at a neck part to be equal or more than that of a bus by allowing a low boiling point element I which has a lower melt point than a base material of highly pure Au or Au alloy and is subjected to solid solution with Au to be contained in the base materials by a specific amount. CONSTITUTION:A low boiling-point element I which has a lower boiling point than melt point of a base material of highly pure Au or Au alloy and is subjected to solid solution with Au is contained in the base material by 25-10000 at ppm. A low boiling point element with a lower boiling point than the melt point of the base material is evaporated and scattered from a melted ball when the ball is formed but cannot be evaporated from a neck part, thus generating stress for vaporization. The low boiling point element I which is subjected to solid solution with Au cannot easily escape from the Au, cannot satisfy characteristics if the content is less than 25 at ppm, wire drawing machining becomes difficult since embrittlement phenomenon of bus starts to be seen at 10000 at ppm or more and remaining amount within the ball without being scattered when forming the ball becomes large and the ball becomes excessively hard, thus leading to chip crack when performing bonding and enabling 25-10000 at ppm to be needed.

Description

【発明の詳細な説明】 〈産業上の利用分野〉 本発明は半導体素子のチップ電極と外部リードとを接続
するために用いられる半導体素子用ボンディング線、特
にボールボンディング法に好適なものに関する。DETAILED DESCRIPTION OF THE INVENTION <Industrial Application Field> The present invention relates to a bonding wire for a semiconductor device used for connecting a chip electrode of a semiconductor device and an external lead, and particularly to a bonding wire suitable for the ball bonding method.

〈従来の技術〉 従来、この種の半導体素子用ボンディング線として例え
ばキャピラリーの先端から垂下したＡｕ線の先端を電気
トーチにより溶融させてボールを形成し、このボールを
半導体素子のチップ電極に圧着して接着せしめ、その後
ループ状に外部リードまで導いて該外部リードに圧着・
切断することにより、チップ電極と外部リードを接続さ
せたものがある。<Prior art> Conventionally, this type of bonding wire for semiconductor devices has been used, for example, by melting the tip of an Au wire hanging from the tip of a capillary with an electric torch to form a ball, and then press-bonding this ball to the chip electrode of a semiconductor device. Then, lead it in a loop shape to the external lead and crimp/bond it to the external lead.
Some devices have chip electrodes and external leads connected by cutting.

〈発明が解決しようとする課題〉 しかし乍ら、このような従来の半導体素子用ボンディン
グ線ではボール形成時にこのボール直上のネック部が熱
影響を受けて線材中に蓄積された応力が緩和されるため
熱影響を受けない母線に比べ機械的強さが低下し、その
結果ボンディング作業中にネック部が破断したりワイヤ
倒れやワイヤ垂れが発生すると共に、製品の温度サイク
ル寿命試験において繰り返し温度変化により熱膨張・収
縮して発生する応力がネック部に集中し、ネック部の破
断が発生し易いという問題がある。<Problems to be Solved by the Invention> However, in such conventional bonding wires for semiconductor devices, when the ball is formed, the neck directly above the ball is affected by heat, and the stress accumulated in the wire is alleviated. As a result, the mechanical strength is lower than that of a bus bar that is not affected by heat, resulting in neck breakage, wire collapse, and wire sag during bonding operations, as well as repeated temperature changes during product temperature cycle life tests. There is a problem in that the stress generated by thermal expansion and contraction concentrates on the neck portion, making it easy for the neck portion to break.

一方、近年ＬＳＩの高密度実装化に伴って多ピン化傾向
が強まる中、ボンディング線を細線化してボンディング
ピッチを短縮することが要求されている。On the other hand, in recent years, as LSIs have become more densely packaged and the number of pins has increased, there has been a demand for thinner bonding lines to shorten the bonding pitch.

しかし、前述のボンディング線ではネック部が破断し易
いためにその線径を細くすることができず、上記要求を
満足し得ないという問題もある。However, the above-mentioned bonding wire has the problem that the neck portion is easily broken, so that the diameter of the wire cannot be made thinner, and the above-mentioned requirements cannot be satisfied.

本発明は係る従来事情に鑑み、ネック部の強さを母線と
同等以上にすることを目的とする。In view of the conventional circumstances, the present invention aims to make the strength of the neck portion equal to or higher than that of the generatrix.

〈課題を解決するための手段〉 上記課題を解決するために本発明が講する技術的手段は
、高純度Ａｕ又は／ｕ金合金、これら母材の融点より低
い沸点を有してＡＱと固溶する低沸焦光素工を２５〜１
００００ａ＋ｐｐｍ含有させたことを特徴とするもので
ある。<Means for Solving the Problems> The technical means taken by the present invention to solve the above problems is to use high-purity Au or /u gold alloys, which have boiling points lower than the melting points of these base materials, and which are solid with AQ. 25 to 1 molten low-boiling focusing material
It is characterized by containing 0000a+ppm.

また、高純度＾Ｕ又はＡｕ合金に、これら母材の融点よ
り低い沸点を有してＡ龜固溶しない低沸点元素ＩＩを５
〜５００ｒｔｐｐｍ含有させても良い。In addition, a low boiling point element II, which has a boiling point lower than the melting point of these base materials and does not dissolve in A, is added to the high purity U or Au alloy.
~500rtppm may be contained.

更に、高純度Ａｕ又はＡｕ合金に、これら母材の融点よ
り低い沸点を有してＡＩｌと固溶する低沸焦光素工及び
Ａｕと固溶しない低沸点元素ＩＩを低沸点　　低沸点　
　　　低沸点　　低沸点元素■の　元素■の　　　元素
Ｉの　元素■のの条件において合計５〜１１００００ｘ
ｔｐｐ含有させても良い。Furthermore, high-purity Au or Au alloy is added with a low-boiling focusing element II which has a boiling point lower than the melting point of these base materials and dissolves in Al, and a low-boiling element II which does not dissolve in Au.
Low boiling point Low boiling point element ■ Element ■ Element I Element ■ Total 5 to 110000x under the conditions of
tpp may also be included.

そして、高純度Ａｕとは不可避不純物を含む９９．９９
％以上のものを母材として用いる。And, high purity Au is 99.99% containing unavoidable impurities.
% or more is used as the base material.

Ａｕ合金とは高純度ＡｕにＰｄ、　Ａｇ　（２Ｑａｔ％
以下）、Ｐｔ　（１（ｌａｊ％以下）　、Ｒｈ　（２！
１％以下）　、Ｏｓ、　Ｒｕ（ｌａｔ％）　、Ｂｅ、　
Ｃｉ、　Ｇｅ、　Ｙ、　Ｌａ、　Ｍｇ、　Ｉｔ、　Ｇａ
。Au alloy is high purity Au, Pd, Ag (2Qat%
), Pt (1 (laj% or less), Rh (2!
1% or less), Os, Ru (lat%), Be,
Ci, Ge, Y, La, Mg, It, Ga
.

Ｉｎ、　Ｍｏ、　Ｒｃ、　Ｃｕ、　Ｆｅ　（ｌｘｔｐｐ
ｍ　〜８ｘｔ％）等の中から選ばれる一種又は二種以上
含有させたものを用い、Ａｕ合金とすることにより母材
自身の常温及び高温で機械的強さを向上させて高速ボン
ディングを可能にすると共に、ボール形成時におけるネ
ック部の結晶粒粗大化を防止している。In, Mo, Rc, Cu, Fe (lxtpp
By using an Au alloy containing one or more types selected from the following: At the same time, coarsening of crystal grains in the neck portion during ball formation is prevented.

母材の融点より低い沸点を有してＡｕと固溶する低沸点
元素Ｉとは例えばＸｎ、　Ｃｄ、　Ｈｇ、　Ｔｅ等であ
り、母材の融点より低い沸点を有してＡｕと固溶しない
低沸点元素■とは例えばＰ、　　Ｓ、八ｓ、　Ｓｅ、　
Ｒｈ、　Ｃｇ等である。Low boiling point elements I that have a boiling point lower than the melting point of the base material and dissolve in solid form with Au are, for example, Xn, Cd, Hg, Te, etc., and have a boiling point lower than the melting point of the base metal and do not dissolve in solid form with Au. Examples of low boiling point elements are P, S, 8S, Se,
Rh, Cg, etc.

く作用〉 上記の半導体素子のボンディング用金線における各成分
の限定理由について述べる。Effects> The reason for limiting each component in the gold wire for bonding a semiconductor element will be described.

母材の融点より低い沸点を有する低沸点元素はボール形
成時に熔融したボール中から蒸発飛散するものの、ネッ
ク部中からは蒸発できないが気化しようとして応力を発
生する作用があるが、そのうちＡｕと固溶する低沸点元
素Ｉは＾Ｕから抜は難くその含有量が２５ａｔｐｐｍ未
満では特性を満足することができず、一方１１０００Ｑ
ａｔｐｐ以上では母線の脆化現象が見られるようになる
ため伸線加工が難しくなると共に、ボール形成時におい
てボール中に飛散せずに残留する量が多くなりボールが
硬くなり過ぎてボンディングの際にチップ割れの原因と
なるので２５〜１００００ａ　ｔｐｐｍとする必要があ
る。Low boiling point elements with a boiling point lower than the melting point of the base material evaporate and scatter from the molten ball during ball formation, but they cannot evaporate from the neck part but try to vaporize and generate stress, The soluble low boiling point element I is difficult to remove from ^U, and if its content is less than 25 atppm, the characteristics cannot be satisfied.
Above atpp, wire drawing becomes difficult because the generatrix becomes brittle, and at the same time, a large amount of wire remains in the ball without scattering during ball formation, making the ball too hard and causing problems during bonding. Since it causes chip cracking, it is necessary to set it at 25 to 10,000 atppm.

また、Ａｕと固溶しない低沸点元素■はＡｕから抜は易
くその含有量が５ｘｔｐｐｍ未満では特性を満足するこ
とができず、一方５ＨａｆＨｍ以上では母線の脆化現象
が見られるようになるため伸線加工が難しくなると共に
、ボール中に飛散せずに残留する量が多くなりボールが
硬（なり過ぎてチップ割れの原因となるので５〜５００
ａｔｐｐｍとする必要がある。In addition, the low boiling point element (■), which does not form a solid solution with Au, is easily extracted from Au, and if the content is less than 5xtppm, the properties cannot be satisfied.On the other hand, if the content is less than 5xtppm, the embrittlement phenomenon of the generatrix will be observed, so It becomes difficult to process wires, and the amount that remains in the ball without scattering increases, making the ball hard (too much and may cause chip cracking).
It is necessary to set it to atppm.

Ａｕと固溶する低沸点元素Ｉ及びＡｕと固溶しない低沸
点元素Ｈの合計の含有量の下限は、低沸点元素　低沸点
元素 ■の含有量ヤ■の含有量よ１ ２５　　　　５　　　　　の条件において５ａｌｐｐ＋
ｎ未満では特性を満足することができないので上記条件
において５ａｔｐｐＩＩｌとする必要がある。The lower limit of the total content of low boiling point element I that dissolves in solid solution with Au and low boiling point element H that does not dissolve in solid solution with Au is 1 25 5 from the content of low boiling point element 5alpp+
If it is less than n, the characteristics cannot be satisfied, so it is necessary to set it to 5atppIIl under the above conditions.

一方、Ａｕと固溶する低沸点元素Ｉ及びＡｕと固溶しな
い低沸点元素■の合計の含有量の上限は、低沸点元素　
低沸点元素 ■の含有量　■の含有量工１ ＋ １００００　　　　５００　　　　　、、条件１：おい
ア］、００００ａｊｐｐｍ以上では母線の脆化現象が見
られるようになるため伸線加工が難しくなると共に、ボ
ール中に飛散せずに残留する量が多くなりボールが硬く
なり過ぎてチップ割れの原因となるので上記条件におい
て１００００　ａｔｐｐｍとする必要がある。On the other hand, the upper limit of the total content of low boiling point element I that dissolves in solid solution with Au and low boiling point element ■ that does not dissolve in solid solution with Au is
Content of low-boiling point element ■Content of ■Content 1 + 10000 500,,Condition 1: OiA], If the content exceeds 0000ajppm, the embrittlement phenomenon of the generatrix will be observed, making wire drawing difficult, and the wire drawing process will become difficult. The amount remaining without scattering increases, making the ball too hard and causing chip cracking, so it is necessary to set the amount to 10,000 atppm under the above conditions.

そして高純度Ａｕ又はＡｕ合金に、これら母材の融点よ
り低い沸点を有してＡｕと固溶する低沸点元素を２５〜
１１００００ａｔｐｐ含有させるか、又はＡｕと固溶し
ない低沸点元素を５〜５００ａｔｐｐｍ含有させるか、
或いはこれら低沸点元素■と低沸点元素ＩＩを低沸点　
　低沸点　　　　低沸点　　低沸点元素Ｉの　元素］の
　　　元素■の　元素■の含有量　や含有量　２．２含
有量　や含有量の条件において合計５〜ｌ００００ａ＋
ｐｐｍ含有させることにより、ボール形成時においてボ
ール中の低沸点元素が蒸発飛散し、これにより金属特有
のガス吸収を防いで接合に良好なボールが得られると共
に、ネック部中の低沸点元素は蒸発できないが気化しよ
うとして応力を発生し、これに伴いボンディング後のネ
ック部の破断強度が応力の発生しない母線に比べて向上
するものである。Then, high-purity Au or Au alloy is added with a low boiling point element having a boiling point lower than the melting point of these base materials and solid-soluble with Au.
110,000 atppm, or 5 to 500 atppm of a low boiling point element that does not dissolve with Au,
Alternatively, these low boiling point elements ■ and low boiling point elements II can be combined with low boiling point
Low boiling point Low boiling point Low boiling point element
By containing ppm, low boiling point elements in the ball evaporate and scatter during ball formation, thereby preventing gas absorption peculiar to metals and obtaining a ball with good bonding properties.In addition, low boiling point elements in the neck part evaporate and scatter. Although this is not possible, stress is generated as it attempts to vaporize, and as a result, the fracture strength of the neck portion after bonding is improved compared to the generatrix where no stress is generated.

〈実施例〉 以下、具体的な実施例について説明する。<Example> Specific examples will be described below.

各試料は９９．９９９％の高純度Ａｕと、この高純度Ａ
ＱにＰｄを２０ａ１％含有させたＡｕ合金と、高純度Ａ
ｕにＢｅをＩＯａｔｐｐｍ含有させたＡｕ合金と、高純
度ＡｕにＭｏを０．５ａｔ％含有させたＡｕ合金と、高
純変人〇にＣｍを８！１％含有させたＡｕ合金を用意し
、これら高純度＾Ｕ及び夫々のＡｕ合金にＩｎ、　Ｃｄ
、　Ｈｇ、　　Ｐ、　Ｒｈを添加して溶解鋳造し、次に
溝ロール加工を施し、その途中で焼なまし処理を施した
後に線引加工で線径３０μの母線に成形し、更に十分な
応力除去を行ったものである。Each sample is made of 99.999% high purity Au and this high purity A
Au alloy containing 20a1% of Pd in Q and high purity A
We prepared an Au alloy in which u contained IO at ppm of Be, an Au alloy in which high-purity Au contained 0.5 at% Mo, and an Au alloy in which high-purity 〇 contained 8!1% Cm. In and Cd in high purity U and each Au alloy
, Hg, P, and Rh are added and melted and cast, then subjected to groove roll processing, annealed in the middle, and then wire drawn to form a generatrix with a wire diameter of 30μ, and then subjected to sufficient stress. This has been removed.

各試料の元素含有率は表（１）に示す通りであり、その
試料隘１〜５４は本発明の実施品、試料定５５、５６は
本発明の組成範囲にない比較界である。The elemental content of each sample is as shown in Table (1), where samples 1 to 54 are examples of the present invention, and samples 55 and 56 are comparative samples that are not within the composition range of the present invention.

表（１） 上記試料によってプルテストを所定回数（ｎ＝４０）宛
行い、夫々のプル強度及びネック部以外の母線部分で破
断した回数と、加工性の良否と、チップ割れの有無を測
定した結果をＡｕ、各＾Ｕ合金毎に次表（２）に示す。Table (1) A pull test was performed on the above samples a predetermined number of times (n = 40), and the results of measuring each pull strength, number of breaks at the generatrix portion other than the neck, workability, and presence or absence of chip cracking. is shown in the following table (2) for each Au and each ^U alloy.

この測定結果により本発明の組成範囲にあるものはプル
テストにおけるＣモード破断の数が範囲外のものに比べ
て明らかに多いことからネック部がそれ以外の母線部分
より強いことが判り、前述した範囲で最適であることが
理解される。From this measurement result, the number of C-mode fractures in the pull test in the composition range of the present invention is clearly higher than that in the composition range outside the range, and it is found that the neck part is stronger than the other generatrix parts. It is understood that this is optimal.

〈発明の効果〉 本発明は上記の構成であるから、以下の利点を有する。<Effect of the invention> Since the present invention has the above configuration, it has the following advantages.

■　高純度ＡＤ又はＡａ金合金、これら母材の融点より
低い沸点を有してＡｕと固溶する低沸点元素を２５〜１
０θＱＱｚｆｐｐｍ含有させるか、又はＡｕと固溶しな
い低沸点元素を５〜５００λｌｐｐｍ含有させるか、或
いはこれら両低沸点元素Ｉ、　　ｎを 低沸点　　低沸点　　　　低沸点　　低沸点元素■の　
元素■の　　　元素工の　元素■の含有量　。含有量　
、□よ含有量　や含有量２５　　　　　５　　　　　　
　１ＱＧＯ０５００させることにより、ボール形成時に
おいてボール中の低沸点元素が蒸発飛散し、これにより
金属特有のガス吸収を防いで接合に良好なボールが得ら
れると共に、ネック部中の低沸点元素は蒸発できないが
気化しようとして応力を発生し、これに伴いボンディン
グ後のネック部の破断強度が応力の発生しない母線に比
べて向上するので、ネック部の強さを母線と同等以上に
することができる。■ High-purity AD or Aa gold alloy, containing 25 to 1 low boiling point elements that have a boiling point lower than the melting point of these base materials and are solid-soluble with Au.
0θQQzfppm, or 5 to 500λlppm of a low boiling point element that does not dissolve with Au, or both of these low boiling point elements I and n are included in the low boiling point element ■.
Content of element ■ of elemental technology. Content
, □yo content and content 25 5
By applying 1QGO0500, the low boiling point elements in the ball evaporate and scatter during ball formation, thereby preventing the gas absorption peculiar to metals and obtaining a ball that is good for bonding, and the low boiling point elements in the neck part cannot evaporate. generates stress as it attempts to vaporize, and as a result, the breaking strength of the neck portion after bonding is improved compared to the generatrix without stress, so the strength of the neck portion can be made equal to or higher than that of the generatrix.

従って、ボール形成時にネック部が熱影響を受けて母線
より弱くなる従来のものに比べ、ボンディング作業中の
ネック部の破断やワイヤ倒れ、ワイヤ垂れが発生しない
と共に、製品の温度サイクル寿命試験において繰り返し
温度変化により発生する応力が母線全体に分散して吸収
され、ボンディング線の破断の最頻発生部位であるネッ
ク部の破断は劇的に減少し、信頼性が向上する。Therefore, compared to conventional products where the neck part is affected by heat during ball formation and becomes weaker than the bus bar, the neck part does not break during the bonding process, wire falls down, or wire sag occurs, and the product is repeatedly tested during temperature cycle life tests. Stress caused by temperature changes is dispersed and absorbed over the entire generatrix, dramatically reducing the number of fractures at the neck, which is the most common site of bonding wire fracture, and improving reliability.

■　ネック部が破断し難くなるので、ボンディング線の
線径を微細化でき、これにもとないボンディングピッチ
の短縮化が可能となり、ＬＳＩの高密度実装が図れる。- Since the neck part becomes difficult to break, the wire diameter of the bonding wire can be made finer, which in turn makes it possible to shorten the bonding pitch, allowing for high-density mounting of LSIs.

Claims (3)

【特許請求の範囲】[Claims] （１）高純度Ａｕ又はＡｕ合金に、これら母材の融点よ
り低い沸点を有してＡｕと固溶する低沸点元素 I を２
５〜１００００ａｔｐｐｍ含有させたことを特徴とする
半導体素子用ボンディング線。(1) High-purity Au or Au alloy is added with 2 low-boiling-point elements I that have a boiling point lower than the melting point of these base materials and form a solid solution with Au.
A bonding wire for a semiconductor device, characterized in that the bonding wire contains 5 to 10,000 atppm. （２）高純度Ａｕ又はＡｕ合金に、これら母材の融点よ
り低い沸点を有してＡｕと固溶しない低沸点元素IIを５
〜５００ａｔｐｐｍ含有させたことを特徴とする半導体
素子用ボンディング線。(2) Add 5 low boiling point elements II to high-purity Au or Au alloys, which have a boiling point lower than the melting point of these base materials and do not dissolve in solid form with Au.
A bonding wire for a semiconductor device, characterized in that it contains ~500 atppm. （３）高純度Ａｕ又はＡｕ合金に、これら母材の融点よ
り低い沸点を有してＡｕと固溶する低沸点元素 I 及び
Ａｕと固溶しない低沸点元素IIを （（低沸点元素 I の含有量／２５）＋（低沸点元素II
の含有量／５））≧１≧（（低沸点元素 I の含有量／
１００００）＋（低沸点元素IIの含有量／５００）） の条件において合計５〜１００００ａｔｐｐｍ含有させ
たことを特徴とする半導体素子用ボンディング線。(3) High-purity Au or Au alloy is added with low-boiling point element I, which has a boiling point lower than the melting point of these base materials and is solid-dissolved with Au, and low-boiling-point element II, which is not solid-dissolved with Au. Content/25) + (Low boiling point element II
(content of low-boiling element I/5)) ≧1≧((content of low-boiling element I/
10,000)+(Content of low boiling point element II/500)) A bonding wire for a semiconductor device, characterized in that it contains a total of 5 to 10,000 atppm under the following conditions.
JP2146498A 1990-06-04 1990-06-04 Bonding wire for semiconductor device Expired - Lifetime JP2888252B2 (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2146498A JP2888252B2 (en) 1990-06-04 1990-06-04 Bonding wire for semiconductor device
US07/708,204 US5298219A (en) 1990-06-04 1991-05-31 High purity gold bonding wire for semiconductor device
MYPI91000971A MY113367A (en) 1990-06-04 1991-06-03 Bonding wire for semiconductor device.
GB9111994A GB2245902B (en) 1990-06-04 1991-06-04 Bonding wire for semiconductor device
GB9401294A GB2273716B (en) 1990-06-04 1994-01-24 Bonding wire for semiconductor device
US08/453,999 US5538685A (en) 1990-06-04 1995-05-30 Palladium bonding wire for semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2146498A JP2888252B2 (en) 1990-06-04 1990-06-04 Bonding wire for semiconductor device

Publications (2)

Publication Number Publication Date
JPH0438840A true JPH0438840A (en) 1992-02-10
JP2888252B2 JP2888252B2 (en) 1999-05-10

Family

ID=15408985

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2146498A Expired - Lifetime JP2888252B2 (en) 1990-06-04 1990-06-04 Bonding wire for semiconductor device

Country Status (1)

Country Link
JP (1) JP2888252B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003023029A (en) * 2001-07-09 2003-01-24 Tanaka Electronics Ind Co Ltd Gold wire for connecting semiconductor element and manufacturing method therefor
US8620114B2 (en) 2006-11-29 2013-12-31 Google Inc. Digital image archiving and retrieval in a mobile device system

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003023029A (en) * 2001-07-09 2003-01-24 Tanaka Electronics Ind Co Ltd Gold wire for connecting semiconductor element and manufacturing method therefor
US8620114B2 (en) 2006-11-29 2013-12-31 Google Inc. Digital image archiving and retrieval in a mobile device system

Also Published As

Publication number Publication date
JP2888252B2 (en) 1999-05-10

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