JP2914578B2 - Bonding wire for semiconductor device - Google Patents

Bonding wire for semiconductor device

Info

Publication number
JP2914578B2
JP2914578B2 JP2192791A JP19279190A JP2914578B2 JP 2914578 B2 JP2914578 B2 JP 2914578B2 JP 2192791 A JP2192791 A JP 2192791A JP 19279190 A JP19279190 A JP 19279190A JP 2914578 B2 JP2914578 B2 JP 2914578B2
Authority
JP
Japan
Prior art keywords
purity
wire
neck portion
alloy
core wire
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2192791A
Other languages
Japanese (ja)
Other versions
JPH0479235A (en
Inventor
克之 豊福
一郎 永松
信次 白川
祐人 伊賀
毅 鯨岡
憲正 村上
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tanaka Denshi Kogyo KK
Original Assignee
Tanaka Denshi Kogyo KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tanaka Denshi Kogyo KK filed Critical Tanaka Denshi Kogyo KK
Priority to JP2192791A priority Critical patent/JP2914578B2/en
Priority to US07/729,226 priority patent/US5364706A/en
Priority to MYPI91001293A priority patent/MY107874A/en
Priority to GB9115519A priority patent/GB2248416B/en
Publication of JPH0479235A publication Critical patent/JPH0479235A/en
Application granted granted Critical
Publication of JP2914578B2 publication Critical patent/JP2914578B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
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  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Description

【発明の詳細な説明】 〈産業上の利用分野〉 本発明は半導体素子のチップ電極と外部リードとを接
続するために用いられる半導体素子用ボンディング線、
特にボールボンディング法に好適なものに関する。DETAILED DESCRIPTION OF THE INVENTION <Industrial Application Field> The present invention relates to a bonding wire for a semiconductor element used for connecting a chip electrode of a semiconductor element and an external lead,
Particularly, the present invention relates to a method suitable for a ball bonding method.

〈従来の技術〉 従来、この種の半導体素子用ボンディング線として例
えばキャピラリーの先端から垂下したAu線の先端を電気
トーチにより溶融させてボールを形成し、このボールを
半導体素子のチップ電極に圧着して接着せしめ、その後
ループ状に外部リードまで導いて該外部リードに圧着・
切断することにより、チップ電極と外部リードを接続さ
せたものがある。<Prior Art> Conventionally, as a bonding wire for a semiconductor element of this type, for example, a tip of an Au wire hanging down from a tip of a capillary is melted by an electric torch to form a ball, and the ball is pressed against a chip electrode of the semiconductor element. And then lead it to the external lead in a loop and crimp it to the external lead.
There is a type in which a chip electrode is connected to an external lead by cutting.

〈発明が解決しようとする課題〉 しかし乍ら、このような従来の半導体素子用ボンディ
ング線ではボール形成時にこのボール直上のネック部が
熱影響を受けて線材中に蓄積された応力が緩和されるた
め、熱影響を受けない母線に比べ機械的強さが低下し、
その結果ボンディング作業中にネック部が破断したりワ
イヤ倒れやワイヤ垂れが発生すると共に、製品の温度サ
イクル寿命試験において繰り返し温度変化により熱膨張
・収縮して発生する応力がネック部に集中し、ネック部
の破断が発生し易いという問題がある。<Problems to be Solved by the Invention> However, in such a conventional bonding wire for a semiconductor device, the neck portion immediately above the ball is thermally affected when the ball is formed, so that the stress accumulated in the wire is reduced. As a result, the mechanical strength is lower than that of a bus that is not affected by heat,
As a result, during the bonding operation, the neck breaks, the wire falls, and the wire sags.In the temperature cycle life test of the product, the stress generated by thermal expansion and contraction due to repeated temperature changes concentrates on the neck, There is a problem that the part is easily broken.

一方、近年LSIの高密度実装化に伴って多ピン化傾向
が強まる中、ボンディング線を細線化してボンディング
ピッチを短縮することが要求されている。On the other hand, in recent years, with the tendency to increase the number of pins in accordance with high-density mounting of LSIs, it is required to reduce the bonding pitch by thinning the bonding wires.

しかし、前述のボンディング線ではネック部が破断し
易いためにその線径を細くすることができず、上記要求
を満足し得ないという問題もある。However, the above-described bonding wire has a problem that the neck portion is easily broken, so that the wire diameter cannot be reduced, and the above requirement cannot be satisfied.

本発明は斯る従来事情に鑑み、ネック部の強さを母線
と同等以上にすることを目的とする。The present invention has been made in view of the above circumstances, and has an object to make the strength of a neck portion equal to or greater than that of a bus bar.

〈課題を解決するための手段〉 上記課題を解決するために本発明が講ずる技術的手段
は、高純度Pd又はPd合金からなる芯線の外周面に高純度
Au又はAu合金からなる被覆材を被覆し、且つ前記被覆材
の外径に対する芯線の外径の径比を15.0〜75.0％又は9
5.0〜99.0％としたことを特徴とするものである。<Means for Solving the Problems> In order to solve the above problems, the technical measures taken by the present invention is to provide a high purity Pd or Pd alloy with a high purity
A coating material made of Au or an Au alloy is coated, and the diameter ratio of the outer diameter of the core wire to the outer diameter of the coating material is 15.0 to 75.0% or 9
It is characterized by being set to 5.0 to 99.0%.

そして、高純度Pdとは不可避不純物を含む99.9％以上
のものを用い、Pd合金とは高純度PdにPt（8at％３以
下）、Ag（5at％以下）、In,Mg,Mo,Y（5at％以下）、G
e,La（1at％以下）や母材の融点より低い沸点を有する
低沸点元素等の中から選ばれる一種又は二種以上含有さ
せたものを用い、Pd合金とすることにより常温及び高温
での機械的強さを向上させて高速ボンディングを可能に
すると共に、ボール形成時におけるネック部の結晶粒粗
大化を防止している。The high-purity Pd is 99.9% or more containing inevitable impurities, and the Pd alloy is high-purity Pd as Pt (8 at% or less), Ag (5 at% or less), In, Mg, Mo, Y ( 5at% or less), G
e, La (1 at% or less) or a material containing one or more selected from low-boiling elements having a boiling point lower than the melting point of the base material. The mechanical strength is improved to enable high-speed bonding, and at the same time, coarsening of crystal grains at the neck portion during ball formation is prevented.

また、高純度Auとは不可避不純物を含む99.99％以上
のものを用い、Au合金とは高純度AuにAg（20at％以
下）、Pt（15at％以下）、Cu,In,Ge,Mo,Y,Zr（5at％以
下）、Be,Ca,La,Mg（1at％以下）や母材の融点より低い
沸点を有する低沸点元素等の中から選ばれる一種又は二
種以上含有させたものを用い、Au合金とすることにより
常温及び高温での機械的強さを向上させて高速ボンディ
ングを可能にすると共に、ボール形成時におけるネック
部の結晶粒粗大化を防止している。In addition, high-purity Au uses 99.99% or more containing unavoidable impurities, and Au alloy refers to high-purity Au as Ag (20at% or less), Pt (15at% or less), Cu, In, Ge, Mo, Y , Zr (5 at% or less), Be, Ca, La, Mg (1 at% or less) or a material containing one or more selected from low boiling elements having a boiling point lower than the melting point of the base material. By using an Au alloy, the mechanical strength at normal and high temperatures is improved to enable high-speed bonding, and at the same time, coarsening of crystal grains in the neck portion during ball formation is prevented.

〈作用〉 被覆材の外径に対する芯線の外径の径比が15％より小
さい場合や99％より大きい場合には、ボール形成時にネ
ック部が熱影響を受けても該ネック部の芯線の外周部分
と被覆材の内周部分との間に十分な厚さの拡散層が形成
されずネック部の強度を向上させられない。<Operation> When the diameter ratio of the outer diameter of the core wire to the outer diameter of the coating material is smaller than 15% or larger than 99%, the outer periphery of the core wire of the neck portion is affected even when the neck portion is thermally affected during ball formation. Since a diffusion layer having a sufficient thickness is not formed between the portion and the inner peripheral portion of the coating material, the strength of the neck cannot be improved.

また、被覆材の外径に対する芯線の外径の径比が75％
を超えて95％未満の場合には、ネック部に十分な厚さの
拡散層が形成されてネック部の強度を向上させられる
が、ボール硬度が硬くなりすぎてチップ割れの原因とな
る。Also, the diameter ratio of the core wire outer diameter to the coating material outer diameter is 75%.
If it exceeds 95% and is less than 95%, a diffusion layer having a sufficient thickness is formed on the neck portion to improve the strength of the neck portion, but the ball hardness becomes too hard, which causes chip cracking.

本発明は上記した通り、高純度Pd又はPd合金からなる
芯線の外周面に高純度Au又はAu合金からなる被覆材を被
覆し、且つ被覆材の外径に対する芯線の外径の径比を1
5.0〜75.0％又は95.0〜99.0％とする技術的手段を採用
することにより、ボール形成時にネック部が熱影響を受
けて該ネック部の芯線の外周部と被覆材の内周部分とが
相互拡散し、Pd−Au合金からなる拡散層を形成してネッ
ク部の強度が拡散層のない母線に比べ向上すると共に、
ボールが硬くなりすぎず適度な硬度となるものである。As described above, the present invention covers the outer peripheral surface of a core wire made of high-purity Pd or a Pd alloy with a coating material made of high-purity Au or an Au alloy, and adjusts the diameter ratio of the outer diameter of the core wire to the outer diameter of the coating material to 1.
By adopting the technical means of 5.0 to 75.0% or 95.0 to 99.0%, the neck portion is thermally affected at the time of ball formation, and the outer peripheral portion of the core wire of the neck portion and the inner peripheral portion of the coating material are mutually diffused. Then, while forming a diffusion layer made of a Pd-Au alloy, the strength of the neck portion is improved as compared with the bus without the diffusion layer, and
The ball has an appropriate hardness without being too hard.

〈実施例〉 以下、具体的な実施例について説明する。<Example> Hereinafter, a specific example will be described.

試料No.1〜14は高純度Au又はAu合金からなる被覆材１
を高純度Pd又はPd合金からなる芯線２にクラッドし、次
に線引き加工を施し、その途中で焼なまし処理を施した
後に線引加工で線径30μの母線に成形し、更に応力除去
を行ったものであり、図示せる如く上記被覆材１の外径
をD1,芯線２の外径をD2としてこれら両者の径比D2/D1％
を変えている。Sample Nos. 1 to 14 are coating materials 1 made of high-purity Au or Au alloy
Is clad on a core wire 2 made of high-purity Pd or a Pd alloy, then subjected to wire drawing, annealed in the middle thereof, formed into a bus having a wire diameter of 30μ by wire drawing, and further subjected to stress removal. As shown in the figure, the outer diameter of the covering material 1 is D 1 , and the outer diameter of the core wire 2 is D 2 , and the diameter ratio of these two is D 2 / D 1 %.
Is changing.

各試料の径比D2/D1％は次表に示す通りであって、そ
の試料No.1〜10は高純度Auの被覆材１を高純度Pdの芯線
２にクラッドした場合、試料No.11〜12は高純度AuにAg
を10at％含有させた被覆材１を高純度Pdの芯線２にクラ
ッドした場合、試料No.13は高純度Auの被覆材１を高純
度PdにAgを2at％含有させた芯線２にクラッドした場
合、試料No.14は高純度Au又はAu合金の被覆材１及び高
純度Pd又はPd合金の芯線２のどちらか一方か或いは両方
にこれら母材の融点より低い沸点を有する低沸点元素を
含有させてクラッドした場合である。試料No.15〜16は
従来の半導体素子用ボンディング線の一例を示す比較品
である。The diameter ratio D 2 / D 1 % of each sample is as shown in the following table. Sample Nos. 1 to 10 were obtained by cladding a high-purity Au coating material 1 on a high-purity Pd core wire 2. .11 ~ 12 is high purity Au to Ag
In the case of Sample No. 13, the coating material 1 containing high-purity Au was clad onto the core wire 2 containing high-purity Pd and containing 2 at% of Ag, when the coating material 1 containing 10 at% was coated on the core wire 2 of high-purity Pd. In the case, Sample No. 14 contains a low-boiling element having a boiling point lower than the melting point of these base materials in one or both of the coating material 1 of high-purity Au or Au alloy and the core wire 2 of high-purity Pd or Pd alloy. In this case, the cladding is performed. Sample Nos. 15 to 16 are comparative products showing examples of conventional bonding wires for semiconductor devices.

本実施例の場合には試料No.14として高純度Auの被覆
材１を高純度PdにＰを500atppm含有させた芯線２にクラ
ッドしたものを例示し、これにより、ボール形成時にお
いてボール中の低沸点元素が蒸発飛散して、金属特有の
ガス吸収を防いで接合に良好なボールが得られると共
に、ネック部中の低沸点元素は蒸発できないが気化しよ
うとして応力を発生し、これに伴ってボンディング後の
ネック部の破断強度が応力の発生しない母線に比べ向上
させている。In the case of the present embodiment, a sample No. 14 in which a coating material 1 of high-purity Au is clad on a core wire 2 containing high-purity Pd containing 500 atppm of P, whereby a The low-boiling elements evaporate and scatter, preventing the absorption of the gas peculiar to the metal to obtain a good ball for bonding, and the low-boiling elements in the neck cannot evaporate but generate stress due to vaporization. The breaking strength of the neck portion after bonding is improved as compared to the bus bar where no stress is generated.

また、試料No.15として高純度Au（99.99％）からなる
Au線を例示、試料No.16として高純度Pd（99.99％）から
なるPd線を例示している。Sample No. 15 is made of high purity Au (99.99%)
An Au wire is illustrated, and a Pd wire made of high-purity Pd (99.99%) is illustrated as Sample No. 16.

上記各試料によってプルテストを所定回数（ｎ＝40）
宛行い、夫々のプル強度及びネック以外の母線部分で破
断した回数（以下、「Ｃモード破断」という）と、チッ
プ割れの有無を測定した結果を次表に示す。A predetermined number of pull tests (n = 40) for each sample
The following table shows the results of measurement of the number of breaks at the bus portion other than the pull strength and the neck (hereinafter referred to as “C mode break”) and the presence or absence of chip cracks.

尚、各試料の中でＣモード破断の数及びチップ割れの
有無に基づき３ランクに区別し、チップ割れがなくしか
もＣモード破断の数が多いものから少ないものへ順に
◎，○，×と判定した。 Each sample was classified into three ranks based on the number of C-mode fractures and the presence or absence of chip cracks. did.

この測定結果により本発明の実施例になる試料No.2〜
４、７〜９、11〜14はＣモード破断の数が比較品に比べ
て明らかに多いことからネック部がそれ以外の母線部材
より強く、ネック部の強度とボール形成時のボール硬さ
にすぐれることが理解される。更に被覆材１の材質をAu
合金とするか又は芯線２の材質をPd合金とするか、或い
は低沸点元素含有させることにより最適になることが理
解される。According to the measurement results, sample Nos. 2 to
In 4, 7, 9 and 11 to 14, the number of C-mode fractures is clearly larger than that of the comparative product, so the neck is stronger than the other busbar members, and the strength of the neck and the ball hardness during ball formation are lower. It is understood that it is excellent. Further, the material of the covering material 1 is Au
It is understood that it becomes optimal by using an alloy, a material of the core wire 2 as a Pd alloy, or containing a low-boiling element.

〈発明の効果〉 本発明は上記の構成であるから、以下の利点を有す
る。<Effect of the Invention> Since the present invention has the above configuration, it has the following advantages.

ボール形成時にネック部が熱影響を受けて該ネック
部の芯線の外周部分と被覆材の内周部分とが相互拡散す
ることにより、Pd−Au合金からる拡散層を形成してネッ
ク部の強度が拡散層のない母線に比べ向上するので、ネ
ック部の強さを母線と同等以上にすることができる。When the ball is formed, the neck portion is thermally affected and the outer peripheral portion of the core wire of the neck portion and the inner peripheral portion of the coating material interdiffuse, thereby forming a diffusion layer made of a Pd-Au alloy to form the neck portion. Is improved compared to a bus without a diffusion layer, so that the strength of the neck portion can be made equal to or greater than that of the bus.

従って、ボール形成時にネック部が熱影響を受けて母
線より弱くなる従来のものに比べ、ボンディング作業中
のネック部の破断やワイヤ倒れ、ワイヤ垂れが発生しな
いと共に、製品の温度サイクル寿命試験において繰り返
し温度変化により発生する応力が母線全体に分散して吸
収され、ボンディング線の破断の最頻発生部位であるネ
ック部の破断は劇的に減少し、信頼性が向上する。Therefore, compared to the conventional one, in which the neck portion is weaker than the bus bar due to the thermal influence during ball formation, breakage of the neck portion during the bonding operation, wire falling, wire dripping does not occur, and the temperature cycle life test of the product is repeated. The stress generated by the temperature change is dispersed and absorbed over the entire bus bar, and the breakage of the neck portion, which is the most frequent occurrence of the breakage of the bonding wire, is dramatically reduced, and the reliability is improved.

ネック部が破断し難くなるので、ボンディング線の
線径を微細化でき、これに伴いボンディングピッチの短
縮化が可能となり、LSIの高密度実装が図れる。Since the neck portion is less likely to break, the wire diameter of the bonding wire can be reduced, and accordingly, the bonding pitch can be reduced, and high-density mounting of the LSI can be achieved.

【図面の簡単な説明】[Brief description of the drawings]

図面は本発明の一実施例を示す半導体素子用ボンディン
グ線の拡大縦断面図である。 １……被覆材、２……芯線The drawing is an enlarged vertical sectional view of a bonding line for a semiconductor device showing one embodiment of the present invention. 1 ... Coating material, 2 ... Core wire

───────────────────────────────────────────────────── フロントページの続き (72)発明者 伊賀 祐人 東京都三鷹市下連雀８―５―１ 田中電 子工業株式会社三鷹工場内 (72)発明者 鯨岡 毅 東京都三鷹市下連雀８―５―１ 田中電 子工業株式会社三鷹工場内 (72)発明者 村上 憲正 東京都三鷹市下連雀８―５―１ 田中電 子工業株式会社三鷹工場内 (56)参考文献 特開 昭59−155161（ＪＰ，Ａ) 特開 昭59−201454（ＪＰ，Ａ) 特開 昭56−169342（ＪＰ，Ａ) 特許2813434（ＪＰ，Ｂ２) (58)調査した分野(Int.Cl.6，ＤＢ名) H01L 21/60 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Yuto Iga 8-5-1 Shimorenjaku, Mitaka City, Tokyo Tanaka Denko Kogyo Co., Ltd. Mitaka Plant (72) Inventor Takeshi Takeru 8-5-1 Shimorenjaku, Mitaka City, Tokyo (72) Inventor Norimasa Murakami 8-5-1 Shimorenjaku, Mitaka City, Tokyo, Japan Tanaka Electronics Industry Co., Ltd. Mitaka Factory (56) References JP-A-59-155161 (JP, A) JP-A-59-201454 (JP, A) JP-A-56-169342 (JP, A) Patent 2813434 (JP, B2) (58) Fields investigated (Int. Cl. 6 , DB name) H01L 21/60

Claims (1)

(57)【特許請求の範囲】(57) [Claims] 【請求項１】高純度Pd又はPd合金からなる芯線の外周面
に高純度Au又はAu合金からなる被覆材を被覆し、且つ前
記被覆材の外径に対する芯線の外径の径比を15.0〜75.0
％又は95.0〜99.0％としたことを特徴とする半導体素子
用ボンディング線。An outer peripheral surface of a core wire made of high-purity Pd or a Pd alloy is coated with a coating material made of high-purity Au or an Au alloy, and the ratio of the outer diameter of the core wire to the outer diameter of the coating material is 15.0 to 75.0
%, Or 95.0 to 99.0%.
JP2192791A 1990-07-20 1990-07-20 Bonding wire for semiconductor device Expired - Fee Related JP2914578B2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2192791A JP2914578B2 (en) 1990-07-20 1990-07-20 Bonding wire for semiconductor device
US07/729,226 US5364706A (en) 1990-07-20 1991-07-12 Clad bonding wire for semiconductor device
MYPI91001293A MY107874A (en) 1990-07-20 1991-07-18 Clad bonding wire for semiconductor device.
GB9115519A GB2248416B (en) 1990-07-20 1991-07-18 Clad bonding wire for semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2192791A JP2914578B2 (en) 1990-07-20 1990-07-20 Bonding wire for semiconductor device

Publications (2)

Publication Number Publication Date
JPH0479235A JPH0479235A (en) 1992-03-12
JP2914578B2 true JP2914578B2 (en) 1999-07-05

Family

ID=16297060

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2192791A Expired - Fee Related JP2914578B2 (en) 1990-07-20 1990-07-20 Bonding wire for semiconductor device

Country Status (1)

Country Link
JP (1) JP2914578B2 (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2813434B2 (en) 1990-07-20 1998-10-22 田中電子工業株式会社 Bonding wire for semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2813434B2 (en) 1990-07-20 1998-10-22 田中電子工業株式会社 Bonding wire for semiconductor device

Also Published As

Publication number Publication date
JPH0479235A (en) 1992-03-12

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