JPH0438718B2 - - Google Patents

Info

Publication number
JPH0438718B2
JPH0438718B2 JP25185883A JP25185883A JPH0438718B2 JP H0438718 B2 JPH0438718 B2 JP H0438718B2 JP 25185883 A JP25185883 A JP 25185883A JP 25185883 A JP25185883 A JP 25185883A JP H0438718 B2 JPH0438718 B2 JP H0438718B2
Authority
JP
Japan
Prior art keywords
graphite crucible
slit
pulling
semiconductor single
crucible
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP25185883A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60137893A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP25185883A priority Critical patent/JPS60137893A/ja
Publication of JPS60137893A publication Critical patent/JPS60137893A/ja
Publication of JPH0438718B2 publication Critical patent/JPH0438718B2/ja
Granted legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10Crucibles or containers for supporting the melt

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP25185883A 1983-12-26 1983-12-26 半導体単結晶引上用黒鉛ルツボ Granted JPS60137893A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP25185883A JPS60137893A (ja) 1983-12-26 1983-12-26 半導体単結晶引上用黒鉛ルツボ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP25185883A JPS60137893A (ja) 1983-12-26 1983-12-26 半導体単結晶引上用黒鉛ルツボ

Publications (2)

Publication Number Publication Date
JPS60137893A JPS60137893A (ja) 1985-07-22
JPH0438718B2 true JPH0438718B2 (enrdf_load_stackoverflow) 1992-06-25

Family

ID=17228964

Family Applications (1)

Application Number Title Priority Date Filing Date
JP25185883A Granted JPS60137893A (ja) 1983-12-26 1983-12-26 半導体単結晶引上用黒鉛ルツボ

Country Status (1)

Country Link
JP (1) JPS60137893A (enrdf_load_stackoverflow)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19830785A1 (de) * 1998-07-09 2000-01-13 Wacker Siltronic Halbleitermat Stütztiegel zur Stützung von Schmelztiegeln
DE10055033A1 (de) * 2000-11-07 2002-05-08 Aixtron Ag CVD-Reaktor mit grafitschaum-isoliertem, rohrförmigen Suszeptor
CN102713024A (zh) * 2009-12-04 2012-10-03 太阳世界创新有限公司 用于保持硅熔体的装置
WO2011096821A1 (en) * 2010-02-08 2011-08-11 Nordic Ceramics As Sectioned crucible
CN102115909A (zh) * 2010-10-13 2011-07-06 浙江舒奇蒙能源科技有限公司 一种三瓣石墨坩埚单晶炉

Also Published As

Publication number Publication date
JPS60137893A (ja) 1985-07-22

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